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1. 发明授权

EP3734659B1 LIGHT RECEIVING ELEMENT AND ELECTRONIC APPARATUS 有权
公开(公告)号：EP3734659B1
公开(公告)日：2024-09-11
申请号：EP18895966.2
申请日：2018-12-12
IPC分类号： H01L27/146 , H01L31/10 , H04N5/33
CPC分类号： H01L27/146 , H01L31/10 , H01L27/14636 , H01L27/14623 , H01L27/14605 , H01L27/14692 , H01L27/14665 , H04N25/70

2. 发明公开

EP4415376A1 PHOTODETECTION APPARATUS AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4415376A1
公开(公告)日：2024-08-14
申请号：EP22878426.0
申请日：2022-09-29
申请人： Sony Semiconductor Solutions Corporation
发明人： TSUKUDA, Yasunori , SHIMADA, Shohei , BAINES, Yannick , MATSUNUMA, Takeshi
IPC分类号： H04N25/70 , G01J1/42 , G01J1/44 , G01S7/4861 , G01S17/89 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/146 , H01L31/10 , H01L31/107 , H01L31/12
CPC分类号： G01J1/44 , G01J1/42 , G01S7/4861 , G01S17/89 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L27/146 , H01L31/10 , H01L31/107 , H01L31/12 , H04N25/70
摘要： [Object]
A bias voltage of a photoelectric conversion element is accurately adjustable regardless of a quantity of incident light.
[Solving Means]
An optical detection device includes a first pixel that has a photoelectric conversion element for generating a carrier by photoelectric conversion, a second pixel that has a carrier generation unit for generating a carrier by a cause other than photoelectric conversion, and a control circuit that controls a bias voltage applied to each of the photoelectric conversion element and the carrier generation unit, according to the carrier generated by the second pixel. The photoelectric conversion element includes a first photoelectric conversion region in which photoelectric conversion is possible and a first pinning film disposed at a position in contact with the first photoelectric conversion region. The carrier generation unit includes a second photoelectric conversion region in which photoelectric conversion is possible, and includes a second pinning film that is partially removed, at a position in contact with the second photoelectric conversion region, or no member that reduces dark current, in an entire area of the second photoelectric conversion region.

3. 发明公开

EP4318623A1 PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE 审中-实审
公开(公告)号：EP4318623A1
公开(公告)日：2024-02-07
申请号：EP22774984.3
申请日：2022-03-03
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： KISHIMOTO, Yuko , IIJIMA, Hiroaki , HIRADE, Masaya , IZUCHI, Masumi
IPC分类号： H01L51/42 , H01L31/10 , H01L27/146 , H01L27/30
摘要： A photoelectric conversion device includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode and including a bulk heterojunction layer containing a donor organic compound and an acceptor organic compound. The donor organic compound includes a first substituent. The acceptor organic compound includes an aromatic portion and a second substituent binding to the aromatic portion and having dipole-dipole interaction with the first substituent.

4. 发明公开

EP4300135A1 LIGHT DETECTION DEVICE AND LIGHT DETECTION SYSTEM 审中-实审
公开(公告)号：EP4300135A1
公开(公告)日：2024-01-03
申请号：EP22759124.5
申请日：2022-01-11
申请人： Sony Semiconductor Solutions Corporation
发明人： HOMMA, Ryutaro , SHINOZUKA, Yasuhiro
IPC分类号： G01S7/497 , G01C3/06 , G01J1/42 , G01S17/894 , H01L31/10 , H01L31/107
摘要： A photodetection device according to the present disclosure includes: a light-receiving section including a light-receiving element, a first switch, a second switch, and a signal generator, the first switch that couples the light-receiving element to a first node by being turned on, the second switch that applies a predetermined voltage to the first node by being turned on, and the signal generator that generates a pulse signal on the basis of a voltage at the first node; a controller that controls operations of the first switch and the second switch; a detector that detects a timing at which the pulse signal is changed, on the basis of the pulse signal; and an output section that outputs a detection signal corresponding to a detection result by the detector when the second switch is turned on.

5. 发明授权

EP3783676B1 BACK-ILLUMINATED SEMICONDUCTOR PHOTODETECTION ELEMENT 有权
公开(公告)号：EP3783676B1
公开(公告)日：2023-11-29
申请号：EP19789238.3
申请日：2019-04-11
发明人： TAGUCHI, Tomoya , YOSHIDA, Yuki , SHIBAYAMA, Katsumi
IPC分类号： H01L31/10 , H01L27/146

6. 发明授权

EP4109473B1 METHOD TO DETECT AND LOCATE THE IN-CORE POSITION OF FUEL BUNDLES WITH CLADDING PERFORATIONS IN CANDU-STYLE NUCLEAR REACTORS 有权
公开(公告)号：EP4109473B1
公开(公告)日：2023-11-01
申请号：EP22000179.6
申请日：2020-06-10
发明人： Heibel, Michael D. , Arndt, Jeffrey L.
IPC分类号： G21C17/04 , G21C17/10 , G01T1/24 , H01L31/0232 , H01L31/10 , H01L31/115

7. 发明公开

EP4254516A2 BACK SURFACE INCIDENT TYPE SEMICONDUCTOR PHOTO DETECTION ELEMENT 审中-实审
公开(公告)号：EP4254516A2
公开(公告)日：2023-10-04
申请号：EP23188339.8
申请日：2019-04-11
申请人： Hamamatsu Photonics K.K.
发明人： TAGUCHI, Tomoya , YOSHIDA, Yuki , SHIBAYAMA, Katsumi
IPC分类号： H01L31/10
摘要： A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions constituting pn junctions with the first semiconductor region. The semiconductor substrate includes the plurality of second semiconductor in a side of the second main surface. Each of the plurality of second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. A thickness of the first region at a deepest position of recesses of the textured surface is smaller than a distance between a surface of the second region and the deepest position in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

8. 发明公开

EP4250377A1 SEMICONDUCTOR LIGHT RECEPTION ELEMENT 审中-实审
公开(公告)号：EP4250377A1
公开(公告)日：2023-09-27
申请号：EP21900398.5
申请日：2021-11-15
申请人： Hamamatsu Photonics K.K.
发明人： TAGUCHI Keiki , ISHIHARA Hajime , OHSHIGE Yoshiaki , MAKINO Kenji
IPC分类号： H01L31/10
摘要： A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including In x Ga 1-x As; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion. The second electrode is connected to a second portion of the second conductivity type located on the opposite side to the substrate with respect to the light absorption layer in the semiconductor stacked portion,. An In content x in the light absorption layer is equal to or greater than 0.55. A thickness of the light absorption layer is equal to or less than 1.8 µm.

9. 发明公开

EP4235819A1 LIGHT DETECTION DEVICE AND LIGHT DETECTION SYSTEM 审中-实审
公开(公告)号：EP4235819A1
公开(公告)日：2023-08-30
申请号：EP21885692.0
申请日：2021-09-02
申请人： Sony Semiconductor Solutions Corporation
发明人： IKEDA, Yasuji
IPC分类号： H01L31/10 , G01C3/06 , G01S17/894 , H01L31/107
摘要： A photodetection device according to the present disclosure includes a plurality of light-receiving sections that each generates a pulse signal including a pulse corresponding to a result of light reception, a plurality of edge detectors that each generates a detection signal by detecting an edge of the pulse in the pulse signal generated by a corresponding light-receiving section, and an adder that generates a detection value indicating number of the pulses on the basis of a plurality of the detection signals. The edge detectors each include a first latch circuit that generates a first signal by latching the pulse signal on the basis of a first clock signal, a second latch circuit that generates a second signal by latching the first signal on the basis of a second clock signal that is an inverted signal of the first clock signal, a combination circuit that generates a third signal on the basis of the pulse signal, the first signal, and the second signal, and a third latch circuit that generates the detection signal by latching the third signal on the basis of the first clock signal.

10. 发明公开

EP4230974A1 PHOTODETECTOR DEVICE 审中-实审
公开(公告)号：EP4230974A1
公开(公告)日：2023-08-23
申请号：EP23177334.2
申请日：2019-01-24
申请人： Hamamatsu Photonics K.K.
发明人： FUJITA, Takuya , TAMURA, Yusei , MAKINO, Kenji , BABA, Takashi , YAMAMOTO, Koei
IPC分类号： G01J1/42 , G01J11/00 , H01L27/146 , H01L31/10 , H01L31/107 , H01L27/144 , H01L31/02 , H04N25/79 , G01J1/44
摘要： A photodetector device includes an avalanche photodiode array substrate 10 formed from compound semiconductor. A plurality of avalanche photodiodes 20 arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate 10. A circuit substrate 50 includes a plurality of output units 30 which are connected to each other in parallel to form at least one channel 40. Each of the output units 30 includes a passive quenching element 31 and a capacitative element 32. The passive quenching element 31 is connected in series to at least one of the plurality of avalanche photodiodes 20. The capacitative element 32 is connected in series to at least one of the avalanche photodiodes 20 and is connected in parallel to the passive quenching element 31.

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