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1. 发明公开

EP4362112A2 A SEMI-CONDUCTOR DEVICE 审中-实审
公开(公告)号：EP4362112A2
公开(公告)日：2024-05-01
申请号：EP24161336.3
申请日：2016-04-13
申请人： Semi Conductor Device
发明人： KLIPSTEIN, Philip , KLIN, Olga , WEISS, Eliezer
IPC分类号： H01L31/101
CPC分类号： H01L31/035236 , H01L31/108 , H01L31/1868 , H01L27/1462 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/14649 , H01L27/14698 , H01L27/14685 , H01L27/14689 , Y02P70/50 , H01L31/101
摘要： A semiconductor device is disclosed which includes: at least one a device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.

2. 发明公开

EP4280289A1 DIELECTRIC LAYER RESPONSE-BASED FIELD EFFECT TRANSISTOR PHOTODETECTOR 审中-实审
公开(公告)号：EP4280289A1
公开(公告)日：2023-11-22
申请号：EP21919053.5
申请日：2021-12-03
申请人： Huazhong University of Science and Technology
发明人： MEI, Anyi , HAN, Hongwei
IPC分类号： H01L31/101 , H01L27/14
摘要： The present invention relates to the field of photodetectors. Specifically, disclosed is a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carrier transport layer is used for transporting electrons or holes, the photoelectric response dielectric is used for absorbing light under illumination to generate electrons, holes or excitons, and the charge blocking insulating dielectric is used for limiting passage of the electrons, holes or excitons. The generation of photogenerated electrons, holes or excitons in the composite dielectric layer and the movement of the photogenerated electrons, holes or excitons limited within the photoelectric response dielectric cause the equivalent permittivity of the composite dielectric layer to change, causing changes in carrier concentration and conductivity of the carrier transport layer and achieving photoelectric detection according to a change in current between the source and the drain before and after illumination. The present invention significantly improves the flexibility of design of photoelectric detection devices, and helps to further implement a high-performance and low-cost photodetector.

3. 发明公开

EP4150676A1 SOLAR HEAT GAIN COEFFICIENT IMPROVEMENT BY INCORPORATING NIR ABSORBERS 审中-实审
公开(公告)号：EP4150676A1
公开(公告)日：2023-03-22
申请号：EP21802965.0
申请日：2021-05-07
申请人： Ubiquitous Energy, Inc.
发明人： PANDEY, Richa , SYKES, Matthew E. , BARR, Miles C. , LOVE, John A.
IPC分类号： H01L31/0224 , H01L31/02 , H01L31/0256 , H01L31/09 , H01L31/101

4. 发明公开

EP4090910A1 EVENT DRIVEN SENSOR (EDS) TRACKING OF LIGHT EMITTING DIODE (LED) ARRAY 审中-实审
公开(公告)号：EP4090910A1
公开(公告)日：2022-11-23
申请号：EP21741097.6
申请日：2021-01-08
申请人： Sony Interactive Entertainment Inc.
发明人： BASHKIROV, Sergey
IPC分类号： G01B11/00 , G01S5/16 , H01L31/101 , H04N5/33 , G01S17/66

5. 发明授权

EP2981988B1 TRANSPARENT PHOTODETECTOR FOR MOBILE DEVICES 有权转让
公开(公告)号：EP2981988B1
公开(公告)日：2022-02-16
申请号：EP14779144.6
申请日：2014-03-28
发明人： COLLI, Alan
IPC分类号： H01L31/101 , H01L31/0352 , H01L31/112

6. 发明公开

EP3850672A1 OPTICALLY-TRANSPARENT SEMICONDUCTOR BUFFER LAYERS AND STRUCTURES EMPLOYING THE SAME 无效
公开(公告)号：EP3850672A1
公开(公告)日：2021-07-21
申请号：EP19794769.0
申请日：2019-10-01
申请人： Array Photonics, Inc.
发明人： DOWD, Philip , THORP, Jacob , SHELDON, Michael , SUAREZ, Ferran
IPC分类号： H01L31/0304 , H01L31/0687 , H01L31/101

7. 发明授权

EP2984684B1 SPASER TO SPEED UP CMOS PROCESSORS 有权转让
公开(公告)号：EP2984684B1
公开(公告)日：2021-06-02
申请号：EP14782288.6
申请日：2014-04-11
发明人： STOCKMAN, Mark, I.
IPC分类号： H01L31/101 , H01L29/00 , G01N21/01 , G02B6/43 , G02B6/122 , G02B6/10

8. 发明授权

EP3559994B1 CAPTEUR MULTI -SPECTRAL À PHOTODÉTECTEURS EMPILÉS 有权
公开(公告)号：EP3559994B1
公开(公告)日：2020-11-04
申请号：EP17821580.2
申请日：2017-12-18
申请人： SORBONNE UNIVERSITE
发明人： BEN CHOUIKHA, Mohamed , DUBOIS, Gérard
IPC分类号： H01L27/146 , H01L27/144 , H01L31/101

9. 发明授权

EP3157067B1 FABRICATION D'UNE MATRICE DE PHOTODIODES MULTISPECTRALE EN CDHGTE PAR DIFFUSION DE CADMIUM 有权
公开(公告)号：EP3157067B1
公开(公告)日：2020-07-15
申请号：EP16192974.0
申请日：2016-10-10
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： Rochette, Florent
IPC分类号： H01L31/101 , H01L31/103 , H01L31/18 , H01L27/146

10. 发明授权

EP3350842B1 PHOTODÉTECTEUR À COURANT D'OBSCURITÉ RÉDUIT 有权转让
公开(公告)号：EP3350842B1
公开(公告)日：2020-03-18
申请号：EP16774542.1
申请日：2016-09-15
申请人： LYNRED
发明人： RUBALDO, Laurent , PERE LAPERNE, Nicolas , KERLAIN, Alexandre , NEDELCU, Alexandru
IPC分类号： H01L31/0352 , H01L31/101

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