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1. 发明公开

EP2409368A2 OPTOELEKTRONISCHES HALBLEITERBAUTEIL 审中-公开
标题翻译：光电半导体器件
公开(公告)号：EP2409368A2
公开(公告)日：2012-01-25
申请号：EP10700750.2
申请日：2010-01-20
申请人： OSRAM Opto Semiconductors GmbH
发明人： MÜLLER, Martin , STRAUSS, Uwe
IPC分类号： H01S3/0941 , H01S5/40 , H01S5/42
CPC分类号： H01S5/4031 , H01S3/094096 , H01S3/0941 , H01S5/0425 , H01S5/1053 , H01S5/3095 , H01S5/4043 , H01S5/405 , H01S5/4087 , H01S5/423
摘要： At least one embodiment of the optoelectronic semiconductor component (1) comprises an epitactically grown semiconductor body (2) having at least one active layer (3). The semiconductor body (2) of the semiconductor component (1) furthermore comprises at least one barrier layer (4), wherein the barrier layer (4) directly adjoins the active layer (3). In a variation direction or a longitudinal direction (L), perpendicular to a growth direction (G) of the semiconductor body (2), a material composition and/or a layer thickness of the active layer (3) and/or the barrier layer (4) is varied. Due to the variation of the material composition and/or the layer thickness of the active layer (3) and/or the barrier layer (4), an emission wavelength (λ) of a radiation (R) generated in the active layer (3), likewise in the variation direction or in the longitudinal direction (L), is set.

2. 发明公开

EP1989765A2 HALBLEITERLASERVORRICHTUNG 审中-公开
公开(公告)号：EP1989765A2
公开(公告)日：2008-11-12
申请号：EP07711169.8
申请日：2007-02-08
申请人： OSRAM Opto Semiconductors GmbH
发明人： SCHMID, Wolfgang , MÜLLER, Martin
IPC分类号： H01S5/183 , H01S5/04 , H01S5/026
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/22 , H01S5/4031
摘要： The invention relates to a semiconductor laser device comprising an optically pumped surface-emitting vertical emitter (1) which emits in a vertical main radiating direction, and at least one monolithically integrated pumping radiation source (2) for optically pumping the vertical emitter (1), the pumping radiation source emitting pumping radiation that extends transversal to the vertical main radiating direction. According to a first embodiment, the inventive semiconductor laser device is characterized in that at least one vertical section of the pumping radiation source (2) is configured so as to be index-guiding for pumping radiation in a lateral direction perpendicular to the main direction of pumping radiation and perpendicular to the vertical main radiating direction. In a second embodiment, the semiconductor laser device is characterized in that the pumping radiation source (2) has a smaller width in a lateral direction perpendicular to the main direction of pumping radiation in at least one vertical section than in another vertical section. If the dimensions are adequate, modes of the pumping radiation can thus be entirely or at least partly displaced from said section in a vertical direction, resulting in a reduction of absorption losses of the pumping radiation on conducting layers.
摘要翻译：本发明涉及一种半导体激光器件，包括光学泵浦表面发射垂直发射器（1）至少一种单片集成激励辐射源（2），用于光学泵浦垂直发射器（1），其发射在竖直主辐射方向，和，泵浦辐射源发射横向于垂直主辐射方向延伸的泵浦辐射。根据一个第一实施方案，本发明的半导体激光装置的特征在于，激励辐射源的至少一个垂直部分（2）被配置为能够折射率引导为在横向方向垂直泵送辐射的主方向泵浦辐射并垂直于垂直主辐射方向。在第二实施例中，半导体激光器装置的特征在于，泵浦辐射源（2）在垂直于至少一个垂直部分中的泵浦辐射的主方向的横向方向上具有比另一个垂直部分中的更小的宽度。如果尺寸足够，则泵浦辐射的模式因此可以完全或者至少部分地在垂直方向上从所述部分移位，导致泵浦辐射在导电层上的吸收损失的减少。

3. 发明授权

EP2223399B1 KANTENEMITTIERENDER HALBLEITERLASERCHIP MIT ZUMINDEST EINER STROMBARRIERE 有权
公开(公告)号：EP2223399B1
公开(公告)日：2018-08-01
申请号：EP08866552.6
申请日：2008-12-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： KÖNIG, Harald , LAUER, Christian , MÜLLER, Martin , REUFER, Martin , MAYER, Bernd
IPC分类号： H01S5/042 , H01S5/22 , H01S5/40 , H01S5/16 , H01S5/223 , H01S3/08 , H01S5/20 , H01S5/10 , H01S5/30 , H01S5/024
CPC分类号： H01S5/0425 , H01S3/08072 , H01S5/024 , H01S5/02461 , H01S5/1014 , H01S5/168 , H01S5/2004 , H01S5/2205 , H01S5/2231 , H01S5/3095 , H01S5/4031 , H01S5/4081 , H01S2301/18

4. 发明公开

EP2513984A1 OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN BAUELEMENTS 审中-公开
标题翻译：光电子器件及其制造方法的光电子器件
公开(公告)号：EP2513984A1
公开(公告)日：2012-10-24
申请号：EP10781917.9
申请日：2010-11-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： LELL, Alfred , FEHRER, Michael , SCHLENKER, Tilman , TAUTZ, Sönke , STRAUSS, Uwe , MÜLLER, Martin
IPC分类号： H01L33/44 , H01L31/0216
CPC分类号： H01L33/44 , H01L24/24 , H01L24/48 , H01L24/82 , H01L31/02019 , H01L31/0203 , H01L31/02161 , H01L31/186 , H01L33/0095 , H01L33/56 , H01L33/62 , H01L2224/24145 , H01L2224/24226 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01023 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01058 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/181 , H01L2924/3025 , H01L2933/0025 , H01L2933/005 , H01S5/02 , H01S5/028 , H01S5/20 , H01S2301/176 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： The invention relates to an optoelectronic component comprising at least one inorganic optoelectronically active semiconductor component (10) having an active region (3) suitable for emitting or receiving light during operation, and a sealing material (6) applied to at least one surface region (7) by means of atomic layer deposition, covering the surface region (7) in a hermetically sealing manner. The invention further relates to a method for producing an opto-electronic component.
摘要翻译：光电子器件包括具有至少一个无机光电子有源半导体部件在有源区做发射或在手术过程中接收光，和密封材料中的应用通过原子层沉积在至少一个表面区域，所述密封材料覆盖所述表面区域在气密不可渗透的方式。

5. 发明公开

EP2223399A1 KANTENEMITTIERENDER HALBLEITERLASERCHIP MIT ZUMINDEST EINER STROMBARRIERE 有权
标题翻译：边缘发射半导体激光器芯片与至少一个电流势垒
公开(公告)号：EP2223399A1
公开(公告)日：2010-09-01
申请号：EP08866552.6
申请日：2008-12-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： KÖNIG, Harald , LAUER, Christian , MÜLLER, Martin , REUFER, Martin , MAYER, Bernd
IPC分类号： H01S5/10 , H01S5/20
CPC分类号： H01S5/0425 , H01S3/08072 , H01S5/024 , H01S5/02461 , H01S5/1014 , H01S5/168 , H01S5/2004 , H01S5/2205 , H01S5/2231 , H01S5/3095 , H01S5/4031 , H01S5/4081 , H01S2301/18
摘要： The invention specifies an edge-emitting semiconductor laser chip (1) having - at least one contact strip (2), wherein the contact strip (2) has a width B, - an active zone (14) in which electromagnetic radiation is produced during operation of the semiconductor laser chip (1), - at least two current barriers (4) which are arranged on different sides of the contact strip (2) and extend along the contact strip (2), wherein the greatest distance V between at least one of the current barriers (4) and the contact strip (2) is selected in such a manner that the ratio of the greatest distance V to the width B is V/B > 1.

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