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1. 发明授权

EP2760050B1 Method of initialising a hole spin in a quantum-dot device 有权
标题翻译： Methode zum Initialisieren eine Loch-Spins in einer Quantenpunktvorrichtung
公开(公告)号：EP2760050B1
公开(公告)日：2017-01-25
申请号：EP13153131.1
申请日：2013-01-29
申请人： Hitachi, Ltd.
发明人： Mar, Jonathan , Williams, David , Baumberg, Jeremy , Xu, Xiulai
IPC分类号： H01L29/66 , B82Y10/00 , H01L29/76 , H01L29/12
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/127 , H01L29/66984

2. 发明公开

EP2710633A4 SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：扭矩传递记忆细胞的结构与方法
公开(公告)号：EP2710633A4
公开(公告)日：2014-11-19
申请号：EP12785834
申请日：2012-05-02
申请人： MICRON TECHNOLOGY INC
发明人： LIU JUN , SANDHU GURTEJ S
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.

3. 发明公开

EP2710633A2 SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：结构和程序，扭矩传递MEMORY CELL
公开(公告)号：EP2710633A2
公开(公告)日：2014-03-26
申请号：EP12785834.8
申请日：2012-05-02
申请人： Micron Technology, Inc.
发明人： LIU, Jun , SANDHU, Gurtej S.
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C11/16 , G11C11/161 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise an annular STT stack including a nonmagnetic material between a first ferromagnetic material and a second ferromagnetic material and a soft magnetic material surrounding at least a portion of the annular STT stack.

4. 发明授权

EP1647035B1 BAUTEIL MIT EINEM STRUKTURELEMENT MIT MAGNETISCHEN EIGENSCHAFTEN UND VERFAHREN 有权
标题翻译：组件具有磁性和方法的结构元素
公开(公告)号：EP1647035B1
公开(公告)日：2013-04-10
申请号：EP04738918.4
申请日：2004-07-19
申请人： Qimonda AG
发明人： BRANDT, Martin, S. , GÖNNENWEIN, Sebastian, T., B. , GRAF, Tobias , HÜBL, Hans , WASSNER, Thomas
IPC分类号： H01F41/30 , H01L29/66 , H01L43/10 , B82Y25/00 , H01F10/32
CPC分类号： H01L29/66984 , B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/3213 , H01F41/303 , H01L43/10

5. 发明公开

EP1610391A3 Spin transistor, programmable logic circuit, and magnetic memory 审中-公开
标题翻译：自旋晶体管，可编程逻辑电路和磁存储器
公开(公告)号：EP1610391A3
公开(公告)日：2009-09-23
申请号：EP05253752.9
申请日：2005-06-16
申请人： Kabushiki Kaisha Toshiba
发明人： Saito, Yoshiaki Toshiba Corporation , Sugiyama, Hideyuki Toshiba Corporation
IPC分类号： H01L29/66 , H01L27/22 , G11C11/16
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , H01L29/66984 , Y10S977/932 , Y10S977/933 , Y10S977/936
摘要： A spin transistor (100; 100'; 1100; 1100') includes a first conductive layer (12) that is made of a ferromagnetic material magnetized in a first direction, and functions as one of a source and a drain; a second conductive layer (14) that is made of a ferromagnetic material magnetized in one of the first direction and a second direction that is antiparallel with respect to the first direction, and functions as the other one of the source and the drain. The spin transistor also includes a channel region that is located between the first conductive layer (12) and the second conductive layer (14), and introduces electron spin between the first conductive layer (12) and the second conductive layer (14); a gate electrode that is located above the channel region; and a tunnel barrier film (11a, 11b) that is located between the channel region and at least one of the first conductive layer (12) and the second conductive layer (14).

6. 发明授权

EP1396867B1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy 有权
标题翻译：铁磁室温半导体和等离子辅助分子束外延，作为其制备方法
公开(公告)号：EP1396867B1
公开(公告)日：2008-04-09
申请号：EP03250653.7
申请日：2003-01-31
申请人： Korea Institute of Science and Technology
发明人： Lee, Woo Y. , Han, Suk H. , Chang, Joon Y. , Kim, Hi J. , Lee, Jung Mi, Korea Inst. of Science & Technology , Myoung, Jae M.
IPC分类号： H01F1/40 , H01F10/193 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
摘要： A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

7. 发明公开

EP1603168A4 FIELD-EFFECT TRANSISTOR WITH SPIN-DEPENDENT TRANSMISSION CHARACTERISTIC AND NONVOLATILE MEMORY USING SAME 有权
标题翻译： FELDEFFEKTTRANSISTOR MITSPINABHÄNGIGERÜBERTRAGUNGSEIGENSINGSUNDNICHTFLÜCHTIGERSPEICHER DAMIT
公开(公告)号：EP1603168A4
公开(公告)日：2008-02-27
申请号：EP04704734
申请日：2004-01-23
申请人： JAPAN SCIENCE & TECH AGENCY
发明人： SUGAHARA SATOSHI , TANAKA MASAAKI
IPC分类号： H01L29/82 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/66 , H01L43/08
CPC分类号： H01L29/47 , B82Y10/00 , G11C11/161 , H01L27/228 , H01L29/66984
摘要： When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a). Thus, a high-performance high-degree of integration nonvolatile memory composed of MISFETs operating on the above operating principle can be fabricated.
摘要翻译：当施加栅极电压VGS时，由铁磁源中的金属自旋带引起的肖特基势垒宽度减小，并且来自金属自旋带的向上自旋电子被隧道注入到沟道区域中。然而，由于由于铁磁源（3a）的半导电自旋带而导致的能量势垒，因此来自非磁性接触（3b）的下旋电子不会被注入。也就是说，只有上自旋电子从铁磁源（3a）注入沟道层。如果铁磁源（3a）和铁磁性漏极（5a）被平行磁化，则上行电子通过铁磁性漏极的金属自旋带传导成漏极电流。相反，如果铁磁源（3a）和铁磁性漏极（5a）是反平行磁化的，则由于铁磁性漏极中的半导体自旋带导致的能量势垒Ec，上升自旋电子不能通过铁磁性漏极（5a）传导（5A）。因此，可以制造以上述工作原理工作的由MISFET组成的高性能高集成度非易失性存储器。

8. 发明公开

EP1610386A1 TUNNEL TRANSISTOR HAVING SPIN-DEPENDENT TRANSFER CHARACTERISTIC AND NONVOLATILE MEMORY USING SAME 审中-公开
标题翻译： TUNNELTRANSISTOR MIT SPIN-ABHÄNGIGERTRANSFERCHARAKTERISTIK UNDNICHTFLÜCHTIGERSPEICHER DAMIT
公开(公告)号：EP1610386A1
公开(公告)日：2005-12-28
申请号：EP04724405.8
申请日：2004-03-30
申请人： Japan Science and Technology Agency
发明人： SUGAHARA, Satoshi , TANAKA, Masaaki
IPC分类号： H01L27/105 , H01L43/08
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F1/405 , H01F10/193 , H01L27/228 , H01L29/66984
摘要： A MISFET the channel region of which is a ferromagnetic semiconductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.
摘要翻译：其沟道区域是铁磁半导体的MISFET具有可以通过栅极电压来控制漏极电流的特征，并且具有可以通过铁磁通道区域和铁磁源中的相对磁化方向来控制转移电导的特征（或铁磁性漏极，或铁磁源和铁磁性漏极）。结果，可以以相对磁化方向的形式存储二进制信息，并且电检测相对磁化方向。如果磁性由铁磁半导体的沟道区域的电场效应控制，那么可以大大减少重写信息所需的电流。因此，MISFET可以构成适合于高密度集成的高性能非易失性存储单元。

9. 发明公开

EP1396867A1 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and use 有权
标题翻译：铁磁室温半导体和等离子辅助分子束外延，作为其制备方法
公开(公告)号：EP1396867A1
公开(公告)日：2004-03-10
申请号：EP03250653.7
申请日：2003-01-31
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Lee, Woo Y. , Han, Suk H. , Chang, Joon Y. , Kim, Hi J. , Lee, Jung Mi, Korea Inst. of Science & Technology , Myoung, Jae M.
IPC分类号： H01F1/40 , H01F10/18 , H01L43/04 , H01L29/82 , H01F10/32
CPC分类号： B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
摘要： A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.
摘要翻译： A 3组 - 5组化合物铁磁半导体，包括一种材料“A”选自镓，Al和In和选自氮，磷中的一种材料“B”的选择，worin一种材料“C”选自由Mn，镁，钴，铁，镍，铬和V组成的组中掺杂作为材料为代入材料“A”，化合物半导体有一个单相作为一个整体。铁磁半导体可以通过等离子体增强分子束外延生长方法来制造并且因为它示出了在室温下的铁磁性特性，其可以应用于各种电子自旋器件。

10. 发明公开

EP1314206A1 A SPIN FILTER AND A MEMORY USING SUCH A SPIN FILTER 审中-公开
标题翻译：自旋过滤与显存采用这种附带FILTER
公开(公告)号：EP1314206A1
公开(公告)日：2003-05-28
申请号：EP00958807.0
申请日：2000-09-06
申请人： SCIENTIFIC GENERICS LIMITED
发明人： LOSS, Daniel,Dept. of Physics and Astronomy , RECHER, Patrik,Dept. of Physics and Astronomy , SUKHORUKOV, Eugene V.,Dept. Physics and Astronomy
IPC分类号： H01L29/76
CPC分类号： H01L29/82 , B82Y10/00 , G11C11/16 , G11C2216/08 , H01F1/402 , H01F1/404 , H01F1/408 , H01L27/222 , H01L29/66984 , Y10S977/933
摘要： A spin filtering device has: a spin filter (1) having an input region (3) for carrying an electron current, an output region (4) for carrying an electron current, and a three-dimensionally confined quantum region (2a) arranged to operate in the Coulomb blockade regime and separating the input and output regions (3 and 4) whereby electrons can only pass from the input region to the output region by tunnelling through the quantum region; and Zeeman splitting means (5) for causing Zeeman splitting in the spin filter, the quantum region (2a) and input and output regions (3 and 4) being formed such that the Zeeman splitting in the input and output regions (3 and 4) is less than the Fermi energy such that, in operation, the spin filter outputs a tunnelling current predominantly of one spin polarity. The direction of Zeeman splitting may be controlled to control the predominant spin polarity.

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