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1. 发明授权

EP1764838B1 Use of a spin transistor, using a spin-orbit coupling induced magnetic field 失效
标题翻译：使用旋晶体管，通过偶合磁场的自旋 - 轨道的手段诱导的
公开(公告)号：EP1764838B1
公开(公告)日：2016-03-16
申请号：EP05112407.1
申请日：2005-12-19
申请人： Korea Institute of Science and Technology
发明人： Koo, Hyun Cheol , Han, Suk Hee , Eom, Jong Hwa , Chang, Joon Yeon , Yi, Hyun Jung
IPC分类号： H01L29/66 , H01L29/772 , H01L29/08 , H01F10/193 , H01F1/40
CPC分类号： H01L29/66984 , H01F1/404 , H01F10/193 , H01L29/0843 , H01L29/772

2. 发明公开

EP1788589A4 ANTIFERROMAGNETIC HALF METALLIC SEMICONDUCTOR AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：反铁磁半金属 - 半导体及其制造方法
公开(公告)号：EP1788589A4
公开(公告)日：2009-01-14
申请号：EP05783704
申请日：2005-09-09
申请人： UNIV OSAKA
发明人： AKAI HISAZUMI , OGURA MASAKO
IPC分类号： H01F1/40 , C30B29/48 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： C30B29/48 , C30B23/02 , C30B25/02 , H01F1/0009 , H01F1/402 , H01F1/404 , H01F1/408 , H01L29/24
摘要： An antiferromagnetic half metallic semiconductor is manufactured by adding two or more types of magnetic elements, including a magnetic element having a d-electron number of less than 5 and a magnetic element having a d-electron number of more than 5, to a semiconductor so as to substitute a part of the elements of the semiconductor with the magnetic elements of the two types or more.

4. 发明公开

EP1788589A1 ANTIFERROMAGNETIC HALF METALLIC SEMICONDUCTOR AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：抗坏血酸蛋白酶抗坏血酸（HERMBMETALLHALBLEITER UND HERSTELLUNGSVERFAHRENDAFÜR）
公开(公告)号：EP1788589A1
公开(公告)日：2007-05-23
申请号：EP05783704.9
申请日：2005-09-09
申请人： OSAKA UNIVERSITY
发明人： AKAI, Hisazumi, c/o OSAKA UNIVERSITY , OGURA, Masako, c/o OSAKA UNIVERSITY
IPC分类号： H01F1/40 , C30B29/48 , H01L21/8246 , H01L27/105 , H01L29/82
CPC分类号： C30B29/48 , C30B23/02 , C30B25/02 , H01F1/0009 , H01F1/402 , H01F1/404 , H01F1/408 , H01L29/24
摘要： An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a d-electron number of less than five and a magnetic element with a d-electron number of more than five, and substituting a part of elements of the semiconductor with the two or more types of magnetic elements.
摘要翻译：本发明的反铁磁半金属半导体是通过向半导体中添加具有d电子数小于5的磁性元素和d电子数多的磁性元素的两种以上的磁性元素超过五个，并且用两种或更多种类型的磁性元件代替半导体的一部分元件。

5. 发明公开

EP0634684A4 MAGNETO-OPTICAL ELEMENT. 失效
标题翻译： MAGNETOOPTISCHES元素。
公开(公告)号：EP0634684A4
公开(公告)日：1995-06-28
申请号：EP94904764
申请日：1994-01-25
申请人： TOKIN CORP
发明人： ONODERA KOICHI
IPC分类号： G02F1/00 , H01F1/40 , G02F1/09
CPC分类号： G02F1/0036 , H01F1/402
摘要： This element has a monocrystal of Cd1-x -yMnx Hgy Te. In the phase diagram of a pseudo ternary system of MnTe-HgTe-CdTe, the monocrystal has a composition represented by a point in an area surrounded by the lines connecting the four points, Mn0.01Hg0.04Cd0.95Te, Mn0.01Hg0.1Cd0.89Te, Mn0.17Mg0.12Cd0.71Te, and Mn0.25Hg0.04Cd0.71Te. The element is suitable for use in a wavelength region of 0.8 mu m to 1.1 mu m.

6. 发明授权

EP2947664B1 MAGNETIC MATERIAL AND METHOD FOR PRODUCING MAGNETIC MATERIAL 有权
公开(公告)号：EP2947664B1
公开(公告)日：2020-07-15
申请号：EP14740354.7
申请日：2014-01-07
申请人： Japan Science and Technology Agency
发明人： SUGIMOTO Satoshi , ISOGAI Keita
IPC分类号： C22C22/00 , H01F1/40

7. 发明授权

EP2371767B1 Method for manufacturing a fine structural body 有权
标题翻译：一种用于生产结构化细成员方法
公开(公告)号：EP2371767B1
公开(公告)日：2016-02-17
申请号：EP09834572.1
申请日：2009-07-13
申请人： The University of Tokyo
发明人： OHKOSHI, Shin-ichi , TSUNOBUCHI, Yoshihide , TOKORO, Hiroko , HAKOE, Fumiyoshi , HASHIMOTO, Kazuhito
IPC分类号： C01G23/04 , G11B5/706 , G11B7/243 , H01F1/40 , H01L21/28 , H01L43/10
CPC分类号： C01G23/04 , B82Y10/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2006/42 , G11B5/70626 , G11B7/243 , G11B2007/24306 , G11B2007/2432 , H01F1/0018 , H01F1/40 , H01L21/28273 , H01L21/28282 , H01L43/10 , Y10T428/25 , Y10T428/2982
摘要： There are provided a fine structural body capable of manifesting an unprecedented property; a manufacturing method thereof; and a magnetic memory, a charge storage memory and an optical information recording medium employing such fine structural body. Unlike conventional bulk bodies phase-transited between nonmagnetic semiconductors and paramagnetic metals around about 460K, there can be provided a fine structural body 1 comprised of Ti 3 O 5 , but capable of manifesting an unprecedented property in which a paramagnetic metal property thereof is consistently maintained in all temperature ranges without undergoing phase transition to a nonmagnetic semiconductor.

8. 发明公开

EP2267734A1 HALF-METALLIC ANTIFERROMAGNETIC MATERIAL 审中-公开
标题翻译：抗血栓形成药物
公开(公告)号：EP2267734A1
公开(公告)日：2010-12-29
申请号：EP09721940.6
申请日：2009-03-18
申请人： Osaka University
发明人： AKAI, Hisazumi , OGURA, Masako , NGUYEN, Long Hoang
IPC分类号： H01F1/40 , H01L29/82
CPC分类号： H01F1/408 , H01F1/0009
摘要： A half-metallic antiferromagnetic material that is chemically stable and has a stable magnetic structure is provided.
A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10.
摘要翻译：提供化学稳定且具有稳定磁性结构的半金属反铁磁性材料。根据本发明的半金属反铁磁材料是具有镍砷型，闪锌矿型，纤锌矿型，黄铜矿型或岩盐型的晶体结构的化合物，并且由两种或更多种磁性元素和致汗细胞或pnictogen。两个或多个磁性元件包含具有少于5个有效d电子的磁性元件和具有多于5个有效d电子的磁性元件，并且两个或更多个磁性元件的有效d电子的总数为10或接近到10。

9. 发明公开

EP1394821A2 Magnetic body, magnetic device using the same, and method of manufacturing the same 审中-公开
标题翻译： Magnetkörper，磁铁Anordnung davon und Herstellungsverfahrendafür
公开(公告)号：EP1394821A2
公开(公告)日：2004-03-03
申请号：EP03019530.9
申请日：2003-08-29
申请人： Nippon Telegraph and Telephone Corporation
发明人： Tamura, Hiroyuki , Takayanagi, Hideaki
IPC分类号： H01F1/40 , H01F10/18 , H01F1/00
CPC分类号： H01F10/193 , B82Y25/00 , H01F1/404 , H01F41/302 , Y10S977/932
摘要： A magnetic body composed of non-magnetic material, includes a plurality of localized electron regions (11) in each of which at least one electron is confined to form a localized spin, a barrier potential region (12) having a higher energy than a Fermi energy of an electron in the localized electron region and permitting an electron to be confined in the respective localized electron regions, and a conductive electron region (13) including a conductive electron system having a lower energy than an energy of the barrier potential region, wherein the respective localized electron regions are disposed separate from one another via the barrier potential region and the conductive electron region.
摘要翻译：由非磁性材料构成的磁体包括多个局部电子区域（11），其中至少一个电子被限制以形成局部自旋，势垒电位区域（12）的能量高于费米在局部电子区域中的电子的能量并且允许电子被限制在各个局部电子区域中，以及导电电子区域（13），其包括具有比势垒区域的能量低的能量的导电电子系统，其中各自的局部电子区域经由势垒区域和导电电子区域彼此分离设置。

10. 发明公开

EP1271569A2 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure 审中-公开
标题翻译：类型闪锌矿型的华润雪花化合物，涉及它们的制备方法和多层结构的过程
公开(公告)号：EP1271569A2
公开(公告)日：2003-01-02
申请号：EP02013829.3
申请日：2002-06-21
申请人： Tohoku University
发明人： Ohno, Hideo , Matsukura, Fumihiro
IPC分类号： H01F1/40 , C30B23/02 , C30B29/10
CPC分类号： B82Y25/00 , C30B23/02 , C30B29/52 , H01F1/404 , H01F10/3213
摘要： An underlayer made of a III-V semiconductor compound is formed on a given substrate, and a CrSb compound is epitaxially grown on the underlayer by means of MBE method to fabricate a zinc blende type CrSb compound.
摘要翻译：由III-V族半导体化合物的底层是形成在一个给定的基片，和一个华润雪花化合物外延生长上通过MBE方法的装置中的底层以制造闪锌矿型华润雪花化合物。

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