专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2118893B1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权转让
标题翻译：与渐进层非易失性磁存储元件
公开(公告)号：EP2118893B1
公开(公告)日：2012-05-16
申请号：EP08729568.9
申请日：2008-02-11
申请人： Avalanche Technology, Inc.
发明人： RANJAN, Rajiv Yadav , KESHTBOD, Parviz , MALMHALL, Roger, Klas
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： One embodiment of the present invention includes a non-volatile magnetic memory element including layers any of which are graded.

2. 发明公开

EP1716561A4 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：与磁化低饱和HAVING自由层的自旋转移磁性元件
公开(公告)号：EP1716561A4
公开(公告)日：2010-09-29
申请号：EP05723406
申请日：2005-02-18
申请人： GRANDIS INC
发明人： NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
IPC分类号： H01L43/00 , G11B5/673 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303

3. 发明公开

EP1693854A2 Magnetoresistance device including layered ferromagnetic structure, and method of manufacturing the same 有权
标题翻译： Magnetwiderstandsvorrichtung mit ferroelektrischer Schichtstruktur und Verfahren zur Herstellung
公开(公告)号：EP1693854A2
公开(公告)日：2006-08-23
申请号：EP06003065.7
申请日：2006-02-15
申请人： NEC Corporation
发明人： Fukumoto, Yoshiyuki , Igarashi, Chuuji
IPC分类号： G11C11/16
CPC分类号： H01L43/02 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3281 , H01F41/303 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A layered ferromagnetic structure is composed of a first ferromagnetic layer (11) positioned over a substrate (1); a second ferromagnetic layer (13) positioned over the first ferromagnetic layer (11); and a first non-magnetic layer (12) placed between the first and second ferromagnetic layers (11, 13). The top surface of the first ferromagnetic layer (11) is in contact with the first non-magnetic layer (12). The first ferromagnetic layer (11) includes a first orientation control buffer (22) that exhibits an effect of enhancing crystalline orientation of a film formed thereon.
摘要翻译：分层铁磁结构由位于基板（1）上方的第一铁磁层（11）组成; 位于所述第一铁磁层（11）上方的第二铁磁层（13）; 以及放置在第一和第二铁磁层（11,13）之间的第一非磁性层（12）。第一铁磁层（11）的顶表面与第一非磁性层（12）接触。第一铁磁层（11）包括第一取向控制缓冲器（22），其具有增强其上形成的膜的结晶取向的效果。

4. 发明公开

EP1435091A1 MAGNETIC MATERIAL STRUCTURES, DEVICES AND METHODS 有权
标题翻译：磁性材料的结构，设施和程序
公开(公告)号：EP1435091A1
公开(公告)日：2004-07-07
申请号：EP02797763.6
申请日：2002-08-29
申请人： Lambeth, David N.
发明人： Lambeth, David N.
IPC分类号： G11B5/64 , G11B5/66 , G11B5/667 , G11B5/673
CPC分类号： C23C14/225 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/228 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/3109 , G11B5/3903 , G11B5/3909 , G11B5/66 , G11B5/667 , G11B5/7325 , G11B5/851 , H01F10/08 , H01F10/28 , H01F41/303
摘要： A thin film magnetic structure, magnetic devices, and method of producing the same, wherein (110) textured, symmetry broken body centered cubic or body centered cubic derivative crystalline structures epitaxially grown on hexagonal shaped templates, in the presence of a symmetry breaking mechanism is provided to promote oriented uniaxial magnetic properties from a series of successively deposited film layers, result in new oriented magnetic layer structures and microstructures and thus improved magnetic devices and device performance.

5. 发明公开

EP2434540A4 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME 审中-公开
标题翻译：磁存储元件和存储设备
公开(公告)号：EP2434540A4
公开(公告)日：2014-12-03
申请号：EP10777613
申请日：2010-03-17
申请人： FUJI ELECTRIC CO LTD
发明人： YAMADA MICHIYA , OGIMOTO YASUSHI
IPC分类号： H01L21/8246 , B82Y25/00 , G11C11/16 , H01F10/32 , H01F41/30 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F41/303 , H01L43/08

6. 发明公开

EP2573769A1 Varying morphology in magnetic sensor sub-layers 审中-公开
标题翻译： Magnetensor-Unterschichten中的变形形态
公开(公告)号：EP2573769A1
公开(公告)日：2013-03-27
申请号：EP12185310.5
申请日：2012-09-20
申请人： Seagate Technology LLC
发明人： Covington, Mark William , Kief, Mark Thomas , Jung, Wonjoon
IPC分类号： G11B5/39 , G11B5/31 , G01R33/09 , H01F10/32
CPC分类号： G11B5/3932 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/30 , H01F10/3254 , H01F41/303 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： Various embodiments may be generally directed to a magnetic sensor constructed with a decoupling layer that has a predetermined first morphology. A magnetic free layer can be deposited contactingly adjacent to the decoupling layer with the magnetic free layer configured to have at least a first sub-layer having a predetermined second morphology.
摘要翻译：各种实施例可以通常涉及由具有预定的第一形态的解耦层构造的磁传感器。磁性层可以与解耦层接触沉积，其中无磁性层被配置为具有至少具有预定第二形态的第一子层。

7. 发明公开

EP2506264A1 Non-volatile magnetic memory element with graded layer 有权转让
标题翻译： Nichtflüchtigesmagnetisches Speicellelement mit abgestufter Schicht
公开(公告)号：EP2506264A1
公开(公告)日：2012-10-03
申请号：EP12161429.1
申请日：2008-02-11
申请人： Avalanche Technology, Inc.
发明人： Ranjan, Rajiv Yadav , Keshtbod, Parviz , Malmhall, Roger Klas
IPC分类号： G11C11/16
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element (10) comprises a bottom electrode (18), a seeding layer(19) formed on top of the bottom electrode, a pinning layer(20) formed on top of the seeding layer, a fixed layer (22) formed on top of the pinning layer, a tunnel layer (24) formed on top of the fixed layer, a free layer (26) formed on top of the tunnel layer, a cap layer (28) formed on top of the free layer, and a top electrode (30) formed on top of the cap layer. At least one of the bottom electrode, pinning layer, fixed layer, tunnel layer, free layer, cap layer or top electrode is graded. Current is applied to through the bottom electrode to the top electrode, or through the top electrode to the bottom electrode, to switch the magnetization state of the memory element. The invention further comprises a memory cell, a method of manufacturing a non-volatile memory integrated circuit, and a use of a magnetic tunnel junction in a non-volatile magnetic memory element.
摘要翻译：非易失性磁存储元件（10）包括底电极（18），形成在底电极顶部的接种层（19），形成在接种层顶部的钉扎层（20），固定层 22），形成在所述固定层的顶部上的隧道层（24），形成在所述隧道层顶部的自由层（26），形成在所述自由层的顶部的盖层（28）层，以及形成在盖层顶部上的顶部电极（30）。底部电极，钉扎层，固定层，隧道层，自由层，覆盖层或顶部电极中的至少一个被分级。电流通过底部电极施加到顶部电极，或通过顶部电极施加到底部电极，以切换存储元件的磁化状态。本发明还包括存储单元，制造非易失性存储器集成电路的方法以及在非易失性磁存储元件中使用磁性隧道结。

8. 发明公开

EP1435091A4 MAGNETIC MATERIAL STRUCTURES, DEVICES AND METHODS 有权
标题翻译：磁性材料的结构，设施和程序
公开(公告)号：EP1435091A4
公开(公告)日：2008-08-20
申请号：EP02797763
申请日：2002-08-29
申请人： LAMBETH DAVID N
发明人： LAMBETH DAVID N
IPC分类号： C23C14/22 , C23C14/35 , C30B23/02 , G11B5/31 , G11B5/33 , G11B5/39 , G11B5/66 , G11B5/667 , G11B5/673 , G11B5/73 , G11B5/738 , G11B5/851 , H01F10/08 , H01F10/16 , H01F10/28 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11B5/64
CPC分类号： C23C14/225 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/228 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/3109 , G11B5/3903 , G11B5/3909 , G11B5/66 , G11B5/667 , G11B5/7325 , G11B5/851 , H01F10/08 , H01F10/28 , H01F41/303
摘要： A thin film magnetic structure, magnetic devices, and method of producing the same, wherein (110) textured, symmetry broken body centered cubic or body centered cubic derivative crystalline structures epitaxially grown on hexagonal shaped templates, in the presence of a symmetry breaking mechanism is provided to promote oriented uniaxial magnetic properties from a series of successively deposited film layers, result in new oriented magnetic layer structures and microstructures and thus improved magnetic devices and device performance.

9. 发明公开

EP1050056A1 PROCEDE DE GRAVURE MAGNETIQUE, POUR NOTAMMENT L'ENREGISTREMENT MAGNETIQUE OU MAGNETO-OPTIQUE 有权
标题翻译：方法磁雕刻用于磁盘或光磁记录
公开(公告)号：EP1050056A1
公开(公告)日：2000-11-08
申请号：EP99900523.4
申请日：1999-01-12
申请人： CENTRE NATIONAL DELA RECHERCHE SCIENTIFIQUE (CNRS)
发明人： CHAPPERT, Claude , BERNAS, Harry , FERRE, Jacques
IPC分类号： H01F41/14 , G11B11/10 , H01P11/00
CPC分类号： G11B5/855 , B82Y10/00 , B82Y20/00 , B82Y25/00 , B82Y40/00 , G02B6/1225 , G02F1/09 , G11B5/743 , G11B5/746 , G11B11/10582 , H01F10/123 , H01F10/3286 , H01F41/303 , H01F41/34
摘要： The invention concerns a magnetic engraving method characterised in that it consists in controlled irradiation of a material in thin layers to locally modify, over zones with micrometric width or less, said material magnetic properties, such as in particular its coercivity, its magnetic anisotropy and its Curie temperature.

10. 发明公开

EP2808869A3 Magnetic material structures, devices and methods 审中-公开
标题翻译： Magnetische Materialstrukturen，Vorrichtungen und Verfahren
公开(公告)号：EP2808869A3
公开(公告)日：2014-12-17
申请号：EP14175160.2
申请日：2002-08-29
申请人： Lambeth Magnetic Structures, LLC
发明人： Lambeth, David N.
IPC分类号： G11B5/64 , G11B5/66 , G11B5/667 , G11B5/673 , B82Y40/00 , C23C14/22 , B82Y10/00 , B82Y25/00 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/39 , G11B5/73 , G11B5/851 , H01F10/28 , H01F10/32 , H01F41/30 , G11B5/31 , H01F10/08
CPC分类号： C23C14/225 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/228 , C23C14/35 , C30B23/02 , C30B29/52 , G11B5/3109 , G11B5/3903 , G11B5/3909 , G11B5/66 , G11B5/667 , G11B5/7325 , G11B5/851 , H01F10/08 , H01F10/28 , H01F41/303
摘要： A magnetic material structure comprising a substrate; at least one (110) textured bcc-d layer which is magnetic, forming a uniaxial symmetry broken structure, and having a magnetocrystaline anisotropy energy density constant K 1 > 0 or K 1
摘要翻译：一种磁性材料结构，包括基底; 至少一个（110）纹理的bcc-d层，其是磁性的，形成单轴对称断裂结构，并且具有磁性各向异性能量密度常数K 1> 0或K 1 <0; 提供设置在所述基底和所述bcc层之间的（111）纹理六边形原子模板的至少一层; 其中所述六方晶原子模板由fcc-d或hcp结晶材料形成并且紧密堆积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式