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1. 发明授权

EP2133930B1 Magnetoresistance device 有权
标题翻译： Magnetwiderstandsvorrichtung
公开(公告)号：EP2133930B1
公开(公告)日：2011-10-05
申请号：EP08157887.4
申请日：2008-06-09
申请人： Hitachi, Ltd.
发明人： Ogawa, Susumu , Troup, Andrew , Williams, David , Fukuda, Hiroshi
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , H01L43/12

2. 发明公开

EP2133930A1 Magnetoresistance device 有权
标题翻译： Magnetwiderstandsvorrichtung
公开(公告)号：EP2133930A1
公开(公告)日：2009-12-16
申请号：EP08157887.4
申请日：2008-06-09
申请人： Hitachi, Ltd.
发明人： Ogawa, Susumu , Troup, Andrew , Williams, David , Fukuda, Hiroshi
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , H01L43/12
摘要： A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel (2) formed of silicon. A conductor (6) comprising heavily doped silicon is connected to the channel along one side (5) of the channel so as to provide a shunt. A gate arrangement (12) including a gate electrode (13) is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.
摘要翻译：能够显示非凡磁阻（EMR）效应的装置包括由硅形成的细长通道（2）。包括重掺杂硅的导体（6）沿着沟道的一侧（5）连接到沟道，以便提供分路。在通道上设置包括栅电极（13）的栅极布置（12）。向栅电极施加适当极性和足够大的偏压导致通道中形成反转层。

3. 发明公开

EP2560195A1 Memory device with an isolated gate comprising two portions separated by a barrier and method of operating the same 审中-公开
标题翻译：与隔热存储设备，由势垒栅和它们的操作方法包含两个独立的部分
公开(公告)号：EP2560195A1
公开(公告)日：2013-02-20
申请号：EP11177878.3
申请日：2011-08-17
申请人： Hitachi Ltd.
发明人： Williams, David
IPC分类号： H01L21/28 , H01L21/336 , H01L27/108 , G11C11/404 , G11C16/04 , H01L29/423 , H01L29/788 , H01L29/68
CPC分类号： H01L21/28273 , G11C11/404 , G11C16/10 , H01L27/108 , H01L29/66825 , H01L29/685 , H01L29/7881
摘要： A memory device is described. The memory device comprises a semiconductor channel (4), a control gate (11) and an isolated gate (7). The isolated gate comprises first and second portions (8 1 ,8 2 ) separated by a barrier (9) region, the first gate portion arranged proximate to the channel to control conductivity of the channel and the second portion arranged proximate to the control electrode. The isolated gate comprises non-ferroelectric material, such as silicon. The isolated gate is configured to be polarizable in response to an applied external electric field generated using the control gate, without injection of charge carriers to or from the channel, and to remain polarized for a given non-zero time after the electric field is removed.
摘要翻译：一种存储装置进行说明。所述存储器件包括一半导体通道（4），一控制栅极（11），并在分离的门（7）。的分离的栅极包括第一和第二部分由一个屏障（9）区域，布置成靠近于信道控制信道和布置为靠近所述控制电极的第二部分的导电性的第一栅极部分分离（8 1，8 2）。的分离的栅极包括非铁电材料，颜色：例如硅树脂。将分离的栅极被配置为使用控制栅以在施加的外部电场产生的，而没有电荷载流子或从通道喷射是在响应极化，并且对于给定的非零时间保持偏振的电场被解除后，

4. 发明公开

EP2487722A1 Light absorption layer 审中-公开
标题翻译： Lichtabsorptionsschicht
公开(公告)号：EP2487722A1
公开(公告)日：2012-08-15
申请号：EP11151435.2
申请日：2011-01-19
申请人： Hitachi, Ltd.
发明人： Andreev, Aleksey , Williams, David , Miyamoto, Makoto , Yoshimoto, Naoki
IPC分类号： H01L31/032 , H01L31/18 , H01L31/0749
CPC分类号： H01L31/18 , H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： A method of fabricating a light absorption layer of a photovoltaic cell is disclosed. The method comprises depositing an alloy precursor on a base, the alloy precursor including a Group IB element, for example copper, a first Group IIIB element, for example indium, and a second Group IIIB element, for example gallium, annealing the alloy precursor so as to form an alloy and agitating the alloy precursor or alloy ultrasonically during and/or after annealing. The method may comprise zone annealing the alloy precursor.
摘要翻译：公开了一种制造光伏电池的光吸收层的方法。该方法包括在基底上沉积合金前体，合金前体包括IB族元素，例如铜，第一IIIB族元素，例如铟，和第二IIIB族元素，例如镓，使合金前体退火以形成合金并在退火过程中和/或之后超声波搅拌合金前体或合金。该方法可以包括对合金前体进行区域退火。

5. 发明授权

EP2202550B1 Single-photon sources 有权
标题翻译：单光子源
公开(公告)号：EP2202550B1
公开(公告)日：2011-09-07
申请号：EP08172894.1
申请日：2008-12-24
申请人： Hitachi Ltd.
发明人： Xu, Xiulai , Williams, David
IPC分类号： G02B6/42 , G06N99/00
CPC分类号： G06N99/002 , B82Y10/00 , B82Y20/00 , G02B6/4249 , H01S5/02284 , H01S5/1042 , H01S5/3412 , H01S5/423 , H04B10/70 , H04L9/0852

6. 发明公开

EP2209123A1 Magnetoresistive memory 有权转让
标题翻译：磁阻器Speicher
公开(公告)号：EP2209123A1
公开(公告)日：2010-07-21
申请号：EP09150576.8
申请日：2009-01-14
申请人： Hitachi Ltd. , UNIVERSITE PARIS-SUD (PARIS XI)
发明人： Wunderlich, Joerg , Zemen, Jan , Chappert, Claude , Gallagher, Brian , Devolder, Thibaut , Williams, David , Jungwirth, Tomas
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/18 , G11C11/161 , G11C11/1675 , G11C11/5607 , G11C13/04 , G11C13/06 , H01L27/228 , H01L43/08
摘要： A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
摘要翻译：描述了一种操作磁阻器件的方法。该器件包括被配置为表现出磁各向异性并且允许其磁化在至少第一和第二取向之间切换的铁磁区域和与该铁磁区域电容耦合的栅极。该方法包括将电场脉冲施加到铁磁区域，以便引起磁各向异性的取向改变以在第一和第二取向之间切换磁化。

7. 发明公开

EP2202550A1 Single-photon sources 有权
标题翻译： Einzelphotonenquellen
公开(公告)号：EP2202550A1
公开(公告)日：2010-06-30
申请号：EP08172894.1
申请日：2008-12-24
申请人： Hitachi Ltd.
发明人： Xu, Xiulai , Williams, David
IPC分类号： G02B6/42 , G06N99/00
CPC分类号： G06N99/002 , B82Y10/00 , B82Y20/00 , G02B6/4249 , H01S5/02284 , H01S5/1042 , H01S5/3412 , H01S5/423 , H04B10/70 , H04L9/0852
摘要： Apparatus comprises at least two single-photon sources (3) supported on a common substrate (4), each photon source comprising a pillar (5) upstanding from the substrate in a first direction and in which a quantum dot (6) is disposed within a cavity (7) formed between two mirrors (8, 9), the pillar having a light-emitting surface (10). The apparatus also comprises an optical fibre bundle (11) comprising at least two optical fibres (12) having light-receiving ends (15) and a jig (17) for removably coupling the light receiving ends to the light emitting surfaces. The cavities each have a quality factor of at least 10 5 and the pillars have a diameter in a second, transverse direction such that the cavities exhibit the same optical mode. Controlling the optical modes of the cavities in the first and second directions helps to limit the characteristics of photons emitted by the photon sources so that the photons are indistinguishable.
摘要翻译：装置包括支撑在公共衬底（4）上的至少两个单光子源（3），每个光子源包括在第一方向上从衬底直立的柱（5），并且其中量子点（6）设置在其内形成在两个反射镜（8,9）之间的空腔（7），所述柱具有发光表面（10）。该装置还包括光纤束（11），其包括至少两个具有光接收端（15）的光纤（12）和用于将光接收端可拆卸地耦合到发光表面的夹具（17）。每个孔的质量因子至少为10 5，并且柱具有在第二横向方向上的直径，使得空腔呈现相同的光学模式。在第一和第二方向控制空腔的光学模式有助于限制由光子源发射的光子的特性，使得光子是不可区分的。

8. 发明公开

EP2075745A1 Quantum information processing device 审中-公开
标题翻译： Quanteninformationsverarbeitungsvorrichtung
公开(公告)号：EP2075745A1
公开(公告)日：2009-07-01
申请号：EP07124170.7
申请日：2007-12-28
申请人： Hitachi Ltd.
发明人： Williams, David , Gorman, John
IPC分类号： G06N1/00
CPC分类号： B82Y10/00 , G06N99/002
摘要： A quantum information processing device includes an isolated double quantum dot system (902 1 ), an electrometer (903 1 ) and an isolated conductive element (901 1 ) disposed between the isolated quantum dot system and the electrometer for coupling the isolated quantum dot system and the electrometer.
摘要翻译：量子信息处理装置包括分离的双量子点系统（902 1），静电计（903 1）和隔离导电元件（901 1），隔离导电元件（901 1）设置在隔离量子点系统和静电计之间，用于耦合分离的量子点系统和静电计。

9. 发明公开

EP1830410A1 Single-charge tunnelling device 审中-公开
标题翻译： Ein-Electron隧道坝
公开(公告)号：EP1830410A1
公开(公告)日：2007-09-05
申请号：EP06110428.7
申请日：2006-02-24
申请人： Hitachi, Ltd.
发明人： Wunderlich, Jörg , Williams, David , Jungwirth, Tomas , Irvine, Andrew , Gallagher, Bryan
IPC分类号： H01L29/76 , H01L29/82 , G11C11/16 , H01F1/40
CPC分类号： H01L29/201 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F1/404 , H01F10/193 , H01L29/26 , H01L29/7613 , H01L29/7888
摘要： A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5nm-thick layer (4) of Ga 0.98 Mn 0.02 As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.
摘要翻译：单电子晶体管（1）具有细长的导电通道（2）和形成在Ga 0.98 Mn 0.02 As的5nm厚的层（4）中的侧栅极（3）。单电子晶体管（1）可在第一模式中作为晶体管工作，并且在第二模式中可操作为非易失性存储器。

10. 发明公开

EP2760050A1 Quantum-dot device 有权
标题翻译：用于初始化孔方法自旋量子点设备
公开(公告)号：EP2760050A1
公开(公告)日：2014-07-30
申请号：EP13153131.1
申请日：2013-01-29
申请人： Hitachi Ltd.
发明人： Mar, Jonathan , Williams, David , Baumberg, Jeremy , Xu, Xiulai
IPC分类号： H01L29/66 , B82Y10/00 , H01L29/76 , H01L29/12
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/127 , H01L29/66984
摘要： A device comprising a semiconductor region (3; Figure 2 ) which comprises a first semiconductor material and a quantum dot (4; Figure 2 ) which comprises a second semiconductor material embedded in the semiconductor region (3). The quantum dot (4) exhibits a bound hole state (10) lying a first energy (ΔE Veff ) below a valence band edge of the semiconductor region and a bound electron state (11) lying a second energy (ΔE Ceff ) below a conduction band edge of the semiconductor region. A ratio (ΔE Ceff / ΔE Veff ) of the second and first energies is no more than 2.0.

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