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1. 发明公开

EP2905806A4 SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HERSTELLUNGSVERFAHRENFÜREIN SILICIUMCARBIDHALBLEITERBAUELEMENT
公开(公告)号：EP2905806A4
公开(公告)日：2015-10-28
申请号：EP13876770
申请日：2013-10-08
申请人： SHINDENGEN ELECTRIC MFG
发明人： MAEYAMA YUSUKE , WATANABE YOSHIYUKI , NAKAMURA SHUNICHI
IPC分类号： H01L21/28 , H01L21/329 , H01L29/45 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L29/6606 , H01L21/02236 , H01L21/02255 , H01L21/02378 , H01L21/02529 , H01L21/0455 , H01L21/0485 , H01L21/31111 , H01L23/291 , H01L29/0619 , H01L29/1608 , H01L29/167 , H01L29/45 , H01L29/66136 , H01L29/66143 , H01L29/8611 , H01L29/872 , H01L2924/0002 , H01L2924/00

2. 发明公开

EP2922094A2 Semiconductor device and method for producing the same 审中-公开
标题翻译： Halbleiterbauelement und Herstellungsverfahrendafür
公开(公告)号：EP2922094A2
公开(公告)日：2015-09-23
申请号：EP15153827.9
申请日：2015-02-04
申请人： Kabushiki Kaisha Toshiba
发明人： Shimizu, Tatsuo , Shinohe, Takashi
IPC分类号： H01L29/16 , H01L29/45 , H01L29/47 , H01L21/04
CPC分类号： H01L29/1608 , H01L21/0455 , H01L21/046 , H01L21/0485 , H01L21/0495 , H01L21/26506 , H01L29/0657 , H01L29/0865 , H01L29/167 , H01L29/36 , H01L29/41766 , H01L29/4236 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/7802 , H01L29/7806 , H01L29/7813 , H01L29/872
摘要： A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1 × 10 18 cm -3 or more and 1 × 10 22 cm -3 or less; and a metal layer provided on the SiC region.
摘要翻译：根据本公开的实施例的半导体器件包括n型SiC层; 设置在n型SiC层上并含有1×10 18 cm -3以上且1×10 22 cm -3以下的H（氢）或D（氘）的SiC区域; 以及设置在SiC区域上的金属层。

3. 发明公开

EP2434534A4 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME 审中-公开
标题翻译： HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP2434534A4
公开(公告)日：2013-12-25
申请号：EP10777650
申请日：2010-04-22
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： WADA KEIJI , TAMASO HIDETO , MASUDA TAKEYOSHI , HONAGA MISAKO
IPC分类号： H01L21/28 , H01L21/336 , H01L21/337 , H01L21/768 , H01L29/12 , H01L29/417 , H01L29/78 , H01L29/808
CPC分类号： H01L21/0485 , H01L21/0455 , H01L29/1608 , H01L29/401 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/808
摘要： A semiconductor device employing silicon carbide, and the like are provided. In the semiconductor device, even when an electrode material and an upper electrode material are different, a problem does not take place at an interface at which these different types of metals are in contact with each other, thus obtaining high reliability in long-term use. The semiconductor device includes: a contact electrode 16 in contact with silicon carbides 14, 18; and an upper electrode 19 electrically conductive to the contact electrode. The contact electrode 16 is formed of an alloy including titanium, aluminum, and silicon, the upper electrode 19 is formed of aluminum or an aluminum alloy, and the upper electrode achieves the electric conduction to the contact electrode with the upper electrode making contact with the contact electrode.
摘要翻译：提供采用碳化硅的半导体器件等。在半导体器件中，即使当电极材料和上电极材料不同时，在这些不同类型的金属彼此接触的界面处也不会发生问题，因此在长期使用中获得高可靠性。该半导体器件包括：与碳化硅14,18接触的接触电极16; 以及与接触电极导电的上电极19。接触电极16由包含钛，铝和硅的合金形成，上电极19由铝或铝合金形成，并且上电极实现与上电极接触的接触电极的导电接触电极。

4. 发明公开

EP0820636A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC 失效
标题翻译：方法的半导体元件与SiC半导体层
公开(公告)号：EP0820636A1
公开(公告)日：1998-01-28
申请号：EP96910272.0
申请日：1996-04-09
申请人： ABB RESEARCH LTD.
发明人： KONSTANTINOV, Andrei , JANZEN, Erik
IPC分类号： H01L21 , C23C8
CPC分类号： H01L29/6606 , C23C8/02 , C23C8/04 , H01L21/0455 , H01L21/0465 , Y10S438/931
摘要： A method for producing a semiconductor device having a semiconductor layer (1-3) of SiC comprising a step of supplying dopants to the surface of the SiC layer during heating thereof for diffusion of said dopants into the SiC layer, and at least a portion of the surface layer of the SiC layer is prior to said supplying of dopants highly doped so as to control the tendency of the dopants to diffuse into the SiC layer under said surface layer portion.

5. 发明公开

EP3311392A1 FILLING OF DEEP RECESSES 审中-公开
标题翻译：充填深部凹陷
公开(公告)号：EP3311392A1
公开(公告)日：2018-04-25
申请号：EP16729551.8
申请日：2016-06-14
申请人： Ascatron AB
发明人： SCHÖNER, Adolf , VIEIDER, Christian , RESHANOV, Sergey , KAPLAN, Wlodzimierz
IPC分类号： H01L21/02 , H01L21/04 , H01L21/82 , H01L21/8252
CPC分类号： H01L21/02381 , H01L21/02376 , H01L21/02389 , H01L21/0243 , H01L21/02529 , H01L21/0455 , H01L29/0619 , H01L29/1602 , H01L29/1608 , H01L29/2003
摘要： A method of manufacturing a semiconductor with very deep doping structures, comprising the steps of: a) providing a substrate having an upper surface comprising at least one trench, b) adding material to the substrate using epitaxial growth, c) removing material from the top of the substrate to a level below the original upper surface in step a), d) adding material to the substrate using epitaxial growth, e) removing material from the top of the substrate to a level at or below the level after step c). One feature is that the method can be performed with fewer epitaxy steps and is thus less expensive and faster.

6. 发明公开

EP2966674A4 METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP2966674A4
公开(公告)日：2016-10-26
申请号：EP14760219
申请日：2014-01-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HORII TAKU , KIJIMA MASAKI
IPC分类号： H01L21/336 , H01L21/033 , H01L21/04 , H01L29/06 , H01L29/12 , H01L29/16 , H01L29/66 , H01L29/78
CPC分类号： H01L21/0455 , H01L21/02123 , H01L21/02164 , H01L21/0217 , H01L21/0223 , H01L21/02255 , H01L21/02271 , H01L21/0332 , H01L21/046 , H01L21/0465 , H01L21/31144 , H01L21/324 , H01L29/0619 , H01L29/1608 , H01L29/66053 , H01L29/66068 , H01L29/7827
摘要： A method of manufacturing a silicon carbide semiconductor device (100) includes the following steps. A silicon carbide substrate (10) is prepared. A first mask layer (1) is formed in contact with a first main surface (10a) of the silicon carbide substrate (10). The first mask layer (1) includes a first layer (1a) disposed in contact with the first main surface (10a), an etching stop layer (1b) disposed in contact with the first layer and made of a material different from that for the first layer, and a second layer (1c) disposed in contact with a surface of the etching stop layer opposite to the surface in contact with the first layer. A recess (9) is formed in the first mask layer (1) by etching the second layer (1c) and the etching stop layer (1b). A first impurity region (14) is formed in the silicon carbide substrate (10) using the first mask layer (1) with the recess (9). The first mask layer does not include a metallic element. Thus, a method of manufacturing a silicon carbide semiconductor device capable of suppressing metal contamination can be provided.

7. 发明公开

EP2966674A1 METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：EP2966674A1
公开(公告)日：2016-01-13
申请号：EP14760219.7
申请日：2014-01-17
申请人： Sumitomo Electric Industries, Ltd.
发明人： HORII, Taku , KIJIMA, Masaki
IPC分类号： H01L21/336 , H01L29/06 , H01L29/12 , H01L29/78
CPC分类号： H01L21/0455 , H01L21/02123 , H01L21/02164 , H01L21/0217 , H01L21/0223 , H01L21/02255 , H01L21/02271 , H01L21/0332 , H01L21/046 , H01L21/0465 , H01L21/31144 , H01L21/324 , H01L29/0619 , H01L29/1608 , H01L29/66053 , H01L29/66068 , H01L29/7827
摘要： A method of manufacturing a silicon carbide semiconductor device (100) includes the following steps. A silicon carbide substrate (10) is prepared. A first mask layer (1) is formed in contact with a first main surface (10a) of the silicon carbide substrate (10). The first mask layer (1) includes a first layer (1a) disposed in contact with the first main surface (10a), an etching stop layer (1b) disposed in contact with the first layer and made of a material different from that for the first layer, and a second layer (1c) disposed in contact with a surface of the etching stop layer opposite to the surface in contact with the first layer. A recess (9) is formed in the first mask layer (1) by etching the second layer (1c) and the etching stop layer (1b). A first impurity region (14) is formed in the silicon carbide substrate (10) using the first mask layer (1) with the recess (9). The first mask layer does not include a metallic element. Thus, a method of manufacturing a silicon carbide semiconductor device capable of suppressing metal contamination can be provided.
摘要翻译：一种制造碳化硅半导体器件（100）的方法包括以下步骤。制备碳化硅衬底（10）。第一掩模层（1）形成为与碳化硅衬底（10）的第一主表面（10a）接触。所述第一掩模层（1）包括与所述第一主表面（10a）接触设置的第一层（1a），与所述第一层接触设置的蚀刻停止层（1b），所述蚀刻停止层（1b）由与所述第一主表面第一层和第二层（1c），所述第二层（1c）设置成与所述蚀刻停止层的与所述第一层接触的表面相反的表面接触。通过蚀刻第二层（1c）和蚀刻停止层（1b）在第一掩模层（1）中形成凹槽（9）。使用具有凹部（9）的第一掩模层（1）在碳化硅衬底（10）中形成第一杂质区域（14）。第一掩模层不包含金属元素。因此，可以提供一种制造能够抑制金属污染的碳化硅半导体器件的方法。

8. 发明公开

EP2797117A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP2797117A1
公开(公告)日：2014-10-29
申请号：EP12860644.9
申请日：2012-10-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： WADA, Keiji , HIYOSHI, Toru
IPC分类号： H01L29/739 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/66333 , H01L21/02529 , H01L21/043 , H01L21/0455 , H01L29/0834 , H01L29/1608 , H01L29/165 , H01L29/66068 , H01L29/7393 , H01L29/7395
摘要： A silicon carbide substrate (30) includes: an n type drift layer (32) having a first surface (S1) and a second surface (S2) opposite to each other; a p type body region (33) provided in the first surface (S1) of the n type drift layer (32); and an n type emitter region (34) provided on the p type body region (33) and separated from the n type drift layer (32) by the p type body region (33). A gate insulating film (11) is provided on the p type body region (33) so as to connect the n type drift layer (32) and the n type emitter region (34) to each other. A p type Si collector layer (70) is directly provided on the silicon carbide substrate (30) to face the second surface (S2) of the n type drift layer (32).
摘要翻译：碳化硅衬底（30）包括：具有彼此相对的第一表面（S1）和第二表面（S2）的n型漂移层（32）设置在n型漂移层（32）的第一表面（S1）中的p型体区（33）; 以及设置在p型体区（33）上并通过p型体区（33）与n型漂移层（32）分离的n型发射极区（34）。在p型体区（33）上提供栅极绝缘膜（11），以便将n型漂移层（32）和n型发射极区（34）彼此连接。在碳化硅衬底（30）上直接设置p型Si集电极层（70）以面对n型漂移层（32）的第二表面（S2）。

9. 发明授权

EP1683201B1 METHODS OF FORMING POWER SEMICONDUCTOR DEVICES USING BOULE-GROWN SILICON CARBIDE DRIFT LAYERS 有权
标题翻译：方法的形成功率半导体器件通过使用BOULE生长碳化硅漂移LAYERS
公开(公告)号：EP1683201B1
公开(公告)日：2013-01-09
申请号：EP04785228.0
申请日：2004-09-29
申请人： CREE, INC.
发明人： SUMAKERIS, Joseph, John , HOBGOOD, Hudson, McDonald , PAISLEY, Michael, James , JENNY, Jason, Ronald , CARTER, JR., Calvin, H. , TSVETKOV, Valeri, Fedorovich
IPC分类号： H01L21/04 , H01L29/24 , C30B31/20 , C30B29/36 , H01L29/78 , H01L29/808 , H01L29/868 , H01L29/739
CPC分类号： H01L29/7813 , C30B29/36 , C30B31/20 , H01L21/0455 , H01L29/6606 , H01L29/66068 , H01L29/8083 , H01L29/861 , H01L29/868
摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2x10 15 cm -3 . These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

10. 发明公开

EP1039512A3 Method for growing semiconductor film by pulsed chemical vapour deposition 审中-公开
标题翻译：采用脉冲蒸镀生长Hableiterfilms的方法
公开(公告)号：EP1039512A3
公开(公告)日：2003-11-05
申请号：EP00105710.8
申请日：2000-03-17
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takahashi, Kunimasa , Kitabatake, Makoto , Uchida, Masao , Yokogawa, Toshiya
IPC分类号： H01L21/20 , C30B25/14 , C30B29/36 , C30B29/52
CPC分类号： H01L29/66068 , C30B25/02 , C30B25/14 , C30B29/52 , H01L21/0237 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/02658 , H01L21/0455 , H01L29/365 , H01L29/66431
摘要： In a chamber, a substrate is mounted on a susceptor and then heated to an elevated temperature. Source and diluting gases are supplied into the chamber through source and diluting gas supply pipes provided with respective flow meters. In addition, a doping gas is also supplied through an additive gas supply pipe, which is provided with a pulse valve, and a gas inlet pipe into the chamber by repeatedly opening and closing the pulse valve. In this manner, a doped layer is grown epitaxially on the substrate. In this case, a pulsed flow of the doping gas is directly supplied through the pulse valve onto the substrate from the outlet port of a pressure reducer for a doping gas cylinder. As a result, a steeply rising dopant concentration profile appears in a transition region between the substrate and the doped layer, and the surface of the doped layer is planarized.

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