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1. 发明公开

EP3238230A1 DIFFUSION TOLERANT III-V SEMICONDUCTOR HETEROSTRUCTURES AND DEVICES INCLUDING THE SAME 审中-公开
标题翻译：扩散容限III-V族半导体异质结构和器件包括相同
公开(公告)号：EP3238230A1
公开(公告)日：2017-11-01
申请号：EP14909239.7
申请日：2014-12-23
申请人： INTEL Corporation
发明人： KENNEL, Harold W. , METZ, Matthew V. , RACHMADY, Willy , DEWEY, Gilbert , MOHAPATRA, Chandra S. , MURTHY, Anand S. , KAVALIEROS, Jack T. , GHANI, Tahir
IPC分类号： H01L21/18 , H01L21/20
CPC分类号： H01L29/205 , H01L21/02455 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/182 , H01L21/185
摘要： Semiconductor devices including a subfin including a first III-V compound semiconductor and a channel including a second III-V compound semiconductor are described. In some embodiments the semiconductor devices include a substrate including a trench defined by at least two trench sidewalls, wherein the first III-V compound semiconductor is deposited on the substrate within the trench and the second III-V compound semiconductor is epitaxially grown on the first III-V compound semiconductor. In some embodiments, a conduction band offset between the first III-V compound semiconductor and the second III-V compound semiconductor is greater than or equal to about 0.3 electron volts. Methods of making such semiconductor devices and computing devices including such semiconductor devices are also described.
摘要翻译：描述了包括包括第一III-V族化合物半导体的子鳍和包括第二III-V族化合物半导体的沟道的半导体器件。在一些实施例中，半导体器件包括衬底，该衬底包括由至少两个沟槽侧壁限定的沟槽，其中第一III-V族化合物半导体沉积在沟槽内的衬底上，并且第二III-V族化合物半导体外延生长在第一 III-V化合物半导体。在一些实施例中，第一III-V族化合物半导体和第二III-V族化合物半导体之间的导带偏移大于或等于约0.3电子伏特。还描述了制造这种半导体器件的方法和包括这种半导体器件的计算设备。

2. 发明公开

EP1732110A3 Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate and epitaxial substrate 审中-公开
标题翻译：化合物半导体衬底，外延衬底，制造化合物半导体衬底和外延衬底的过程
公开(公告)号：EP1732110A3
公开(公告)日：2011-01-12
申请号：EP06011516.9
申请日：2006-06-02
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nishiura, Takayuki , Horie, Yusuke , Tsubokura, Mitsutaka , Ohama, Osamu
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L29/207 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/0254 , H01L21/02546 , H01L21/02658
摘要： A compound semiconductor substrate includes a substrate composed of a p-type compound semiconductor; and a substance containing p-type impurity atoms, the substance being bonded to a surface of the substrate.

3. 发明公开

EP1732110A2 Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate and epitaxial substrate 审中-公开
标题翻译： Verbindungshalbleitersubstrat，Epitaktisches Substrat，Verfahren zur Herstellung Verbindungshalbleitersubstrat und Epitaktisches Substrat
公开(公告)号：EP1732110A2
公开(公告)日：2006-12-13
申请号：EP06011516.9
申请日：2006-06-02
申请人： Sumitomo Electric Industries, Ltd.
发明人： Nishiura, Takayuki , Horie, Yusuke , Tsubokura, Mitsutaka , Ohama, Osamu
IPC分类号： H01L21/20
CPC分类号： H01L29/207 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/0254 , H01L21/02546 , H01L21/02658
摘要： A compound semiconductor substrate includes a substrate composed of a p-type compound semiconductor; and a substance containing p-type impurity atoms, the substance being bonded to a surface of the substrate.
摘要翻译：化合物半导体衬底包括由p型化合物半导体构成的衬底; 以及含有p型杂质原子的物质，该物质被结合到基片的表面。

4. 发明公开

EP1059661A2 Crack-free epitaxial semiconductor layer formed by lateral growth 审中-公开
标题翻译：通过横向结晶生长产生无裂纹的外延半导体层
公开(公告)号：EP1059661A2
公开(公告)日：2000-12-13
申请号：EP00111392.7
申请日：2000-05-26
申请人： Agilent Technologies Inc
发明人： Chen, Yong , Wang, Shih-Yuan
IPC分类号： H01L21/20
CPC分类号： H01L21/02455 , C30B25/04 , H01L21/0242 , H01L21/02505 , H01L21/02538 , H01L21/0254 , H01L21/02642 , H01L21/02647
摘要： An epitaxial material (55) grown laterally from a surface (56a, 56b) formed in a first epitaxial material (52) having a different lattice parameter allows for the formation of epitaxial material (55) that includes a region (60) that is substantially free of cracks (17). Growing a second epitaxial material (55) from a side wall (56a, 56b) of a trench (57) formed in a first epitaxial material (52) having a different lattice parameter rotates the growth direction of the second epitaxial material (55) through approximately 90° with respect to the major surface (63) of the first epitaxial material (52). In this manner, cracks (17) that occur in the second epitaxial material (55) tend to occur in the direction perpendicular to the side wall (56a, 56b) from which the second epitaxial growth initiates, which direction is also parallel to the major surface (63) of the first epitaxial material (52). This results in a substantially crack-free epitaxial material (60) growing out of the trench (57). The substantially crack-free epitaxial material (60) may by used as a platform from which to grow successive epitaxial layers.

5. 发明公开

EP3011587A1 III-V OR II-VI COMPOUND SEMICONDUCTOR FILMS ON GRAPHITIC SUBSTRATES 有权
标题翻译： III-V-ODER II-VI-VERBUNDHALBLEITERSCHICHTEN AUF GRAPHITSUBSTRATEN
公开(公告)号：EP3011587A1
公开(公告)日：2016-04-27
申请号：EP14731971.9
申请日：2014-06-23
申请人： Norwegian University of Science and Technology (NTNU)
发明人： FIMLAND, Bjørn-Ove , DASA, Dheeraj L , WEMAN, Helge
IPC分类号： H01L21/20
CPC分类号： C30B25/105 , C30B25/183 , C30B29/02 , C30B29/40 , C30B29/48 , H01L21/02376 , H01L21/02455 , H01L21/02466 , H01L21/02469 , H01L21/02485 , H01L21/02538 , H01L21/02551 , H01L21/02631 , H01L29/045 , H01L29/151 , H01L29/16 , H01L29/1606 , H01L29/20 , H01L29/22
摘要： A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.
摘要翻译：一种包含石墨基底上的膜的物质组合物，所述膜已经在所述基底上外延生长，其中所述膜包含至少一种III-V族化合物或至少一种II-VI族化合物。

6. 发明公开

EP2031641A1 Halbleiterbauelement und dessen Verwendung 有权
标题翻译： Halbleiterbauelement和dessen Verwendung
公开(公告)号：EP2031641A1
公开(公告)日：2009-03-04
申请号：EP07017128.5
申请日：2007-08-31
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Dimroth, Frank, Dr. , Schöne, Jan, Dipl.-Ing.
IPC分类号： H01L21/20
CPC分类号： H01L21/02502 , H01L21/0237 , H01L21/02381 , H01L21/02455 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02521
摘要： Die Erfindung betrifft ein Halbleiterbauelement (8) aus einem Substrat (1), mindestens einer Schichtstruktur (3) aus einem III-V-Halbleiter und/oder Si x -Ge 1-x , die einen pn-oder np-Übergang bildet, sowie mindestens einer Pufferschicht (2) aus einem III-V-Halbleiter zur Verbindung der mindestens einen Schichtstruktur (3) mit dem Substrat (1), wobei zusätzlich mindestens eine Blockerschicht (4) mit einer größeren Kristallhärte als die der mindestens einen Schichtstruktur (3) vorgesehen ist, wobei die Blockerschicht (4) die Ausbildung und/oder Fortsetzung von Kristalldefekten verhindert oder reduziert.
摘要翻译：半导体器件具有形成p-n或n-p结的III-V族半导体的衬底（1）和层结构（3）。提供III-V半导体缓冲层（2），用于将层结构与衬底连接起来。阻挡层（4）的晶体硬度大于层结构。阻挡层具有低于临界层厚度的厚度以用于半导体的弛豫。

7. 发明公开

EP1059661A3 Crack-free epitaxial semiconductor layer formed by lateral growth 审中-公开
标题翻译： Rissfreie epitaktische Halbleiterschicht hergestellt mittels横向Kristallwachstum
公开(公告)号：EP1059661A3
公开(公告)日：2003-10-01
申请号：EP00111392.7
申请日：2000-05-26
申请人： LumiLeds Lighting U.S., LLC
发明人： Chen, Yong , Wang, Shih-Yuan
IPC分类号： H01L21/20 , C30B25/18
CPC分类号： H01L21/02455 , C30B25/04 , H01L21/0242 , H01L21/02505 , H01L21/02538 , H01L21/0254 , H01L21/02642 , H01L21/02647
摘要： An method wherein a group III nitride semiconductor is grown laterally from a surface (56a,56b) formed in a first epitaxial layer (52) having a different lattice parameter allows for the formation of epitaxial layer (55) that includes a region (60) that is substantially free of cracks (17). Growing the second epitaxial layer (55) from a side wall (56a,56b) of a trench (57) formed in a first epitaxial layer (52) rotates the growth direction of the second epitaxial layer (55) through approximately 90° with respect to the major surface (63) of the first epitaxial layer (52). In this manner, cracks (17) that occur in the second epitaxial layer (55) tend to occur in the direction perpendicular to the side wall (56a,56b) from which the second epitaxial growth initiates, which direction is also parallel to the major surface (63) of the first epitaxial material (52). This results in a substantially crack-free epitaxial material (60) growing out of the trench (57). The substantially crack-free epitaxial layer (60) may by used to grow successive epitaxial layers.
摘要翻译：其中III族氮化物半导体从形成在具有不同晶格参数的第一外延层（52）中的表面（56a，56b）横向生长的方法允许形成包括区域（60）的外延层（55）基本上没有裂纹（17）。从形成在第一外延层（52）中的沟槽（57）的侧壁（56a，56b）生长第二外延层（55）使第二外延层（55）的生长方向相对于到第一外延层（52）的主表面（63）。以这种方式，在第二外延层（55）中发生的裂纹（17）倾向于在垂直于第二外延生长开始的侧壁（56a，56b）的方向上发生，该方向也平行于主体第一外延材料（52）的表面（63）。这导致从沟槽（57）中生长的基本上无裂纹的外延材料（60）。基本上无裂纹的外延层（60）可用于生长连续的外延层。

8. 发明授权

EP0252300B1 Metal to semiconductor ohmic contacts 失效
标题翻译：金属到半导体OHMIC联系
公开(公告)号：EP0252300B1
公开(公告)日：1992-05-20
申请号：EP87108103.0
申请日：1987-06-04
申请人： AT&T Corp.
发明人： Cunningham, John Edward , Schubert, Erdmann F. , Tsang, Won-Tien
IPC分类号： H01L29/36 , H01L29/06 , H01L21/203
CPC分类号： H01L29/452 , H01L21/02395 , H01L21/02455 , H01L21/02463 , H01L21/02499 , H01L21/02507 , H01L21/02538 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/365 , H01S5/0421

9. 发明公开

EP3125273A1 STRAINED GROUP IV CHANNELS 审中-实审
标题翻译： BELASTETE GRUPPE-IV-KANÄLE
公开(公告)号：EP3125273A1
公开(公告)日：2017-02-01
申请号：EP15179239.7
申请日：2015-07-31
申请人： IMEC VZW
发明人： Kunert, Bernadette , Langer, Robert , Eneman, Geert
IPC分类号： H01L21/02 , H01L29/423
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/02455 , H01L21/02469 , H01L21/02513 , H01L21/02524 , H01L21/02532 , H01L21/30612 , H01L21/3245 , H01L21/823807 , H01L21/823821 , H01L29/045 , H01L29/0673 , H01L29/161 , H01L29/42356 , H01L29/775
摘要： A semiconductor structure comprising:
a. A monocrystalline substrate (1) having a top surface,
b. A non-crystalline structure (2) overlying said monocrystalline substrate and comprising an opening having a width smaller than 10 microns and exposing part of the top surface of said monocrystalline substrate,
c. A buffer structure (3) having a bottom surface abutting said part and a top surface having less than 10 8 threading dislocations per cm 2 , said buffer structure (3) being made of a material having a first lattice constant, and
d. One or more group IV monocrystalline structures (4) abutting said buffer structure (3) and being made of a material having a second lattice constant, different from said first lattice constant.
摘要翻译：一种半导体结构，包括：a。具有顶表面的单晶衬底（1），b。 c。一种非晶体结构（2），覆盖所述单晶衬底并且包括宽度小于10微米的开口，并暴露所述单晶衬底的顶表面的一部分，c。具有邻接所述部分的底表面和每cm 2具有少于10 8个穿透位错的顶表面的缓冲结构（3），所述缓冲结构（3）由具有第一晶格常数的材料制成，d。一个或多个IV族单晶结构（4）邻接所述缓冲结构（3）并且由具有与所述第一晶格常数不同的第二晶格常数的材料制成。

10. 发明公开

EP2573818A1 Group III-V device structure having a selectively reduced impurity concentration 审中-公开
标题翻译： Gruppe-III-V-Vorrichtungsstruktur mit selektiv reduzierter Verunreinigungskonzentration
公开(公告)号：EP2573818A1
公开(公告)日：2013-03-27
申请号：EP12184278.5
申请日：2012-09-13
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L29/20 , H01L29/207 , H01L29/36 , H01L29/778 , H01L21/02 , H01L29/66
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02389 , H01L21/02455 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L21/02584 , H01L21/0262 , H01L21/02634 , H01L29/1095 , H01L29/157 , H01L29/205 , H01L29/207 , H01L29/36 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.
摘要翻译：这里公开了半导体结构和方法的各种实施方式。半导体结构包括衬底，在衬底上的过渡体，以及在过渡体上具有底表面的III-V族中间体。半导体结构还包括在III-V族中间体的顶表面上的III-V族元件层。 III-V族中间体具有连续降低的杂质浓度，其中底表面上较高的杂质浓度连续地降低至顶表面的较低的杂质浓度。

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