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1. 发明公开

EP2706651A3 Integrated power stage with group III-V transistors 审中-公开
标题翻译：集成功率级与III-V族晶体管
公开(公告)号：EP2706651A3
公开(公告)日：2017-11-15
申请号：EP13181861.9
申请日：2013-08-27
申请人： International Rectifier Corporation
发明人： Briere, Michael A. , McDonald, Tim
IPC分类号： H02M3/158 , H01L27/06 , H03K17/687 , H01L21/8252 , H01L23/495 , H01L25/07 , H01L25/16 , H01L25/18 , H01L23/00
CPC分类号： H02M3/155 , H01L21/8252 , H01L23/49562 , H01L24/16 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L25/074 , H01L25/16 , H01L25/18 , H01L27/0605 , H01L27/0629 , H01L27/088 , H01L2224/16225 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/37147 , H01L2224/40227 , H01L2224/40247 , H01L2224/45014 , H01L2224/48227 , H01L2224/48247 , H01L2224/73263 , H01L2224/73265 , H01L2924/00014 , H01L2924/10253 , H01L2924/1027 , H01L2924/1032 , H01L2924/1033 , H01L2924/12032 , H01L2924/13064 , H01L2924/13091 , H01L2924/15311 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H02M3/158 , H03K17/102 , H03K17/6871 , H03K2017/6875 , Y10T307/747 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/84
摘要： In one implementation, an integrated group III-V power stage (100) includes a control switch (108) including a first group III-V transistor coupled to a sync switch (106) including a second group III-V transistor. The integrated group III-V power stage may also include one or more driver stages (104), which may be fabricated in a group III-V die or dies. The driver stage or driver stages, the control switch, and the sync switch may all be situated in a single semiconductor package (101).
摘要翻译：在一个实现中，集成III-V族功率级（100）包括控制开关（108），该控制开关包括耦合到包括第二III-V族晶体管的同步开关（106）的第一III-V族晶体管。集成的III-V族功率级还可以包括一个或多个驱动器级（104），其可以在III-V族晶粒或多个晶粒中制造。驱动器级或驱动器级，控制开关和同步开关可全部位于单个半导体封装（101）中。

2. 发明公开

EP2546883A3 Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode 审中-公开
标题翻译：具有集成二极管的SOI衬底的复合半导体器件
公开(公告)号：EP2546883A3
公开(公告)日：2017-09-20
申请号：EP12175843.7
申请日：2012-07-11
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L27/06 , H01L29/778 , H01L29/861 , H01L29/417
CPC分类号： H01L29/7787 , H01L27/0694 , H01L29/2003 , H01L29/41766 , H01L2224/48091 , H01L2924/12032 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a semiconductor on insulator (SOI) substrate including a diode and an insulator layer. The composite semiconductor device also includes a transition body formed over the diode, and a transistor formed over the transition body. The diode is connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.
摘要翻译：这里公开了复合半导体器件的各种实现。在一个实施方式中，这种复合半导体器件包括绝缘体上半导体（SOI）衬底，其包括二极管和绝缘体层。该复合半导体器件还包括形成在二极管上方的过渡体，以及形成在过渡体上的晶体管。二极管使用贯穿半导体通孔，外部电连接器或两者的组合连接在晶体管两端。

3. 发明公开

EP2690657A3 Robust fuse-protected transistor 审中-公开
标题翻译：乐百氏，由熔丝晶体管保护
公开(公告)号：EP2690657A3
公开(公告)日：2016-05-25
申请号：EP13176249.4
申请日：2013-07-12
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L23/525 , H01L23/62 , H01L29/423 , H01L23/482 , H01L29/778 , H01L29/20 , H01L29/417
CPC分类号： H01L29/778 , H01L23/4824 , H01L23/5256 , H01L23/62 , H01L29/2003 , H01L29/41758 , H01L29/42316 , H01L29/4238 , H01L2924/0002 , H01L2924/00
摘要： According to an exemplary implementation, a transistor includes a plurality of drain fingers interdigitated with a plurality of source fingers. The transistor further includes a gate configured to control current conduction between the plurality of drain fingers and the plurality of source fingers. Additionally, the transistor includes a plurality of drain fuses, each being configured to electrically disconnect a drain finger of the plurality of drain fingers from remaining ones of the plurality of drain fingers. At least one of the plurality of drain fuses can electrically couple the drain finger to a common drain pad. The transistor may further include a plurality of source fuses, each being configured to electrically disconnect a source finger of the plurality of source fingers from remaining ones of the plurality of source fingers.

4. 发明授权

EP2765605B1 Inverter circuit including short circuit protected composite switch 有权转让
标题翻译：转换器与针对短路电流复合开关保护
公开(公告)号：EP2765605B1
公开(公告)日：2015-07-08
申请号：EP14153997.3
申请日：2014-02-05
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L27/02 , H03K17/16 , H03K17/082 , H01L27/085 , H03K17/567
CPC分类号： H01L27/085 , H01L27/0248 , H03K17/082 , H03K17/168 , H03K17/567 , H03K17/6871 , H03K2017/6875

5. 发明公开

EP2884536A1 Group III-V voltage converter with monolithically integrated level shifter, high side driver, and high side power switch 审中-公开
标题翻译：与单片集成电平移位器的III-V电压转换器，电压侧驱动器和电压侧功率开关
公开(公告)号：EP2884536A1
公开(公告)日：2015-06-17
申请号：EP14195599.7
申请日：2014-12-01
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L27/02 , H03K17/081
CPC分类号： H02M3/158 , H01L27/0255 , H01L27/088 , H01L29/16 , H01L29/205 , H01L29/7787 , H03K17/08116 , H03K17/102 , H03K17/567 , H03K2017/6875 , H03K2217/0063
摘要： There are disclosed herein various implementations of a monolithically integrated high side block. Such a monolithically integrated high side block includes a level shifter, a high side driver coupled to the level shifter, and a high side power switch coupled to the high side driver. The high side power switch is monolithically integrated with the high side driver and the level shifter on a common die. Each of the level shifter, the high side driver, and the high side power switch includes at least one group III-V device.
摘要翻译：有在一个单片集成高侧块的各种实现光盘游离缺失。这样的单片集成高侧块包括一个电平移位器，耦合到所述电平移位器高侧驱动器，以及耦合到所述高侧驱动高侧电源开关。高侧功率开关单片与高侧驱动器和在共同的电平移位器集成在一起。每个电平移位器，所述高侧驱动器，和高侧功率开关的包括至少一个III-V族设备。

6. 发明公开

EP2824838A1 Integrated III-Nitride D-mode HFET with cascoded pair half bridge 审中-公开
标题翻译： Integriertes III-Nitrid D模式HFET mit kaskodierterPaarhalbbrücke
公开(公告)号：EP2824838A1
公开(公告)日：2015-01-14
申请号：EP14176405.0
申请日：2014-07-09
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H03K17/22 , H03K17/567 , H03K17/10
CPC分类号： H01L27/0883 , H01L25/074 , H01L27/0605 , H01L2924/0002 , H03K17/107 , H03K17/223 , H03K17/567 , H03K2217/0063 , H03K2217/0072 , H01L2924/00
摘要： There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithcially integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithcally integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET.
摘要翻译：这里公开了包括具有耗尽型III氮化物场效应晶体管（FET）的单片集成半桥的组III-V功率转换电路的各种实施方式，以及包括耗尽型III氮化物 FET和增强模式组IV FET。在一个示例性实施例中，整体集成的半桥包括高边耗尽型III型氮化物FET，其具有耦合在高侧耗尽型III型氮化物FET的导通路径中的使能开关。

7. 发明公开

EP2706651A2 Integrated power stage with group III-V transistors 审中-公开
标题翻译： Integrierte Leistungsstufe mit Gruppe III-V Transistoren
公开(公告)号：EP2706651A2
公开(公告)日：2014-03-12
申请号：EP13181861.9
申请日：2013-08-27
申请人： International Rectifier Corporation
发明人： Briere, Michael A. , McDonald, Tim
IPC分类号： H02M3/158 , H01L27/06
CPC分类号： H02M3/155 , H01L21/8252 , H01L23/49562 , H01L24/16 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/73 , H01L25/074 , H01L25/16 , H01L25/18 , H01L27/0605 , H01L27/0629 , H01L27/088 , H01L2224/16225 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/37147 , H01L2224/40227 , H01L2224/40247 , H01L2224/45014 , H01L2224/48227 , H01L2224/48247 , H01L2224/73263 , H01L2224/73265 , H01L2924/00014 , H01L2924/10253 , H01L2924/1027 , H01L2924/1032 , H01L2924/1033 , H01L2924/12032 , H01L2924/13064 , H01L2924/13091 , H01L2924/15311 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H02M3/158 , H03K17/102 , H03K17/6871 , H03K2017/6875 , Y10T307/747 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/84
摘要： In one implementation, an integrated group III-V power stage (100) includes a control switch (108) including a first group III-V transistor coupled to a sync switch (106) including a second group III-V transistor. The integrated group III-V power stage may also include one or more driver stages (104), which may be fabricated in a group III-V die or dies. The driver stage or driver stages, the control switch, and the sync switch may all be situated in a single semiconductor package (101).
摘要翻译：在一个实现中，集成III-V级功率级（100）包括控制开关（108），其包括耦合到包括第二组III-V晶体管的同步开关（106）的第一组III-V晶体管。集成组III-V功率级还可以包括一个或多个驱动器级（104），其可以在III-V族模具或模具中制造。驱动器级或驱动级，控制开关和同步开关都可以位于单个半导体封装（101）中。

8. 发明公开

EP2629332A2 Transistor having increased breakdown voltage 有权转让
标题翻译：晶体管miterhöhterDurchbruchspannung
公开(公告)号：EP2629332A2
公开(公告)日：2013-08-21
申请号：EP13153374.7
申请日：2013-01-31
申请人： International Rectifier Corporation
发明人： Briere, Michael A. , Thapar, Naresh , Garg, Reenu
IPC分类号： H01L29/417 , H01L29/423 , H01L29/778
CPC分类号： H01L29/7788 , H01L29/41758 , H01L29/42316 , H01L29/7787 , H01L29/78
摘要： There are disclosed herein various implementations of a transistor having an increased breakdown voltage. Such a transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor. In some implementations, the curved drain finger electrode end may be extended beyond the source finger electrode beginning to achieve the increased breakdown voltage.
摘要翻译：这里公开了具有增加的击穿电压的晶体管的各种实现方式。这种晶体管包括具有源极指状电极开始的源极指电极和源极指状电极末端。晶体管还包括具有弯曲的漏极指电极端的漏极指电极，其具有增加的曲率半径。在弯曲的漏极指状电极端处产生的减小的电场允许增加的击穿电压和更坚固和可靠的晶体管。在一些实施方案中，弯曲的漏极指状电极端可以延伸超过源极指状电极开始以实现增加的击穿电压。

9. 发明公开

EP2546986A2 Nested Composite Diode 审中-公开
标题翻译：嵌套复合二极管
公开(公告)号：EP2546986A2
公开(公告)日：2013-01-16
申请号：EP12175466.7
申请日：2012-07-06
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H03K17/30 , H03K17/567
CPC分类号： H03K17/302 , H01L27/0605 , H01L27/0629 , H03K17/567 , H03K17/74
摘要： There are disclosed herein various implementations of nested composite diodes.
In one implementation, a nested composite diode includes a primary transistor coupled to a composite diode. The composite diode includes a low voltage (LV) diode cascoded with an intermediate transistor having a breakdown voltage greater than the LV diode and less than the primary transistor. In one implementation, the primary transistor may be a group III-V transistor and the LV diode may be an LV group IV diode.
摘要翻译：这里公开了嵌套复合二极管的各种实现。在一个实施方式中，嵌套复合二极管包括耦合到复合二极管的主晶体管。复合二极管包括与中间晶体管级联的低压（LV）二极管，该中间晶体管的击穿电压大于LV二极管且小于主晶体管。在一个实现中，主晶体管可以是III-V族晶体管，并且LV二极管可以是LV族IV二极管。

10. 发明公开

EP2495753A2 III-Nitride Semiconductor Structures with Strain Absorbing Interlayer Transition Modules 审中-公开
标题翻译： III-Nitrid-Halbleiterstrukturen mit Strangaufnahmezwischenschicht-Übergangsmodulen
公开(公告)号：EP2495753A2
公开(公告)日：2012-09-05
申请号：EP12157244.0
申请日：2012-02-28
申请人： International Rectifier Corporation
发明人： Briere, Michael A.
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/151 , H01L29/205 , H01L29/778 , H01L29/7786
摘要： There are disclosed herein various implementations of semiconductor structures including III-Nitride interlayer modules. One exemplary implementation comprises a substrate and a first transition body over the substrate. The first transition body has a first lattice parameter at a first surface and a second lattice parameter at a second surface opposite the first surface. The exemplary implementation further comprises a second transition body, such as a transition module, having a smaller lattice parameter at a lower surface overlying the second surface of the first transition body and a larger lattice parameter at an upper surface of the second transition body, as well as a III-Nitride semiconductor layer over the second transition body. The second transition body may consist of two or more transition modules, and each transition module may include two or more interlayers. The first and second transition bodies reduce strain for the semiconductor structure.
摘要翻译：这里公开了包括III-氮化物夹层模块的半导体结构的各种实施方式。一个示例性实现包括衬底和在衬底上的第一过渡体。第一过渡体在第一表面具有第一晶格参数，在与第一表面相对的第二表面具有第二晶格参数。示例性实施方式还包括第二过渡体，例如过渡模块，在覆盖第一过渡体的第二表面的下表面处具有较小的晶格参数，在第二过渡体的上表面具有较大的晶格参数，如以及在第二过渡体上的III-氮化物半导体层。第二过渡体可以由两个或更多个过渡模块组成，并且每个过渡模块可以包括两个或更多个中间层。第一和第二过渡体减小半导体结构的应变。

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