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1. 发明授权

EP2068353B1 PLASMA ETCHING DEVICE AND PLASMA ETCHING METHOD 有权
标题翻译：等离子蚀刻装置及等离子蚀刻方法
公开(公告)号：EP2068353B1
公开(公告)日：2017-05-31
申请号：EP07829301.6
申请日：2007-10-05
申请人： Tokyo Electron Limited
发明人： KOSHIISHI, Akira , KOBAYASHI, Noriyuki , YONEDA, Shigeru , HANAWA, Kenichi , TAHARA, Shigeru , SUGIMOTO, Masaru
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/768 , H05H1/46
CPC分类号： H01J37/32183 , H01J37/32027 , H01J37/32091 , H01J37/32137 , H01J37/32165 , H01J37/32174 , H01J2237/334 , H01J2237/3346 , H01L21/30655 , H01L21/31116 , H01L21/76802 , H01L21/76834

2. 发明公开

EP3057119A1 COATING APPARATUS AND COATING PROCESS FOR NDFEB MAGNETS 有权转让
标题翻译： BESCHICHTUNGSVORRICHTUNG UND BESCHICHTUNGSVERFAHRENFÜRNDFEB-MAGNETEN
公开(公告)号：EP3057119A1
公开(公告)日：2016-08-17
申请号：EP16154784.9
申请日：2016-02-09
申请人： Yantai Shougang Magnetic Materials Inc.
发明人： Yang, Kunkun , Peng, Zhongjie
IPC分类号： H01J37/32 , H01J37/34
CPC分类号： C23C14/3414 , C23C14/165 , C23C14/35 , H01J37/32018 , H01J37/32027 , H01J37/32449 , H01J37/34 , H01J37/3405 , H01J37/3435
摘要： The present invention provides a coating apparatus for NdFeB magnets and a corresponding coating process. The apparatus includes: a vacuum chamber; a source and a cathode being arranged within the vacuum chamber, the source and cathode being positioned to each other in parallel and equidistant; a thermal shield surrounding the source and the cathode; an anode being arranged at a top of the vacuum chamber, wherein the anode and cathode are connected to a positive electrode and negative electrode of a pulsed bias power supply respectively, the anode and source are connected to the positive electrode and negative electrode of a DC bias power supply respectively, and the anode is grounded; an argon gas entrance positioned at a bottom of the vacuum chamber; a vacuum systems being in communication with the vacuum chamber; a furnace door positioned at a front side of vacuum chamber; an observation window positioned at the central of the furnace door; and an optical thermometer being placed outside of the vacuum chamber. The position of the optical thermometer corresponds to that of the observation window.
摘要翻译：本发明提供了一种用于NdFeB磁体的涂覆设备和相应的涂覆工艺。该装置包括：真空室; 源极和阴极布置在真空室内，源极和阴极彼此平行且等距定位; 围绕源极和阴极的热屏蔽; 阳极布置在真空室的顶部，其中阳极和阴极分别连接到脉冲偏压电源的正极和负极，阳极和源极连接到DC的正极和负极偏置电源，阳极接地; 位于真空室底部的氩气入口; 真空系统与真空室连通; 位于真空室前侧的炉门; 位于炉门中央的观察窗; 以及放置在真空室外部的光学温度计。光学温度计的位置与观察窗的位置相对应。

3. 发明公开

EP2879471A4 DC POWER SUPPLY DEVICE, AND CONTROL METHOD FOR DC POWER SUPPLY DEVICE 有权转让
标题翻译：相同的功率控制装置及方法对于相同的功率器件
公开(公告)号：EP2879471A4
公开(公告)日：2016-07-06
申请号：EP12884110
申请日：2012-09-07
申请人： KYOSAN ELECTRIC MFG
发明人： YUZURIHARA ITSUO , ADACHI TOSHIYUKI , KODAMA SHINICHI
IPC分类号： H05H1/46 , C23C14/34 , H01J37/32 , H02M1/36 , H02M7/48 , H05H1/36
CPC分类号： H05H1/46 , H01J37/32027 , H01J37/32045 , H02M3/33507 , H02M3/337 , H02M2001/007 , H05H7/001 , H05H2001/4682

4. 发明公开

EP2916347A1 Plasma etching method and plasma etching apparatus 审中-公开
标题翻译： PLASMAÄTZVERFAHRENUNDPLASMAÄTZVORRICHTUNG
公开(公告)号：EP2916347A1
公开(公告)日：2015-09-09
申请号：EP15157548.7
申请日：2015-03-04
申请人： TOKYO ELECTRON LIMITED
发明人： Nakagawa, Akira
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01J37/32027 , H01J37/32082 , H01J37/32091 , H01J37/32137 , H01J37/32146 , H01J37/32449 , H01J37/32697 , H01L21/31116 , H01L21/67069 , H01L21/76802
摘要： In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least C x F y gas and a rare gas having a mass smaller than a mass of Ar gas into the processing chamber in the processing chamber by switching on a high frequency power application unit under a first condition and a process of extinguishing the plasma of the processing gas in the processing chamber by switching off the high frequency power application unit under a second condition are alternately repeated. A negative DC voltage from a DC power supply is applied such that an absolute value of the negative DC voltage of the second condition becomes greater than an absolute value of the negative DC voltage of the first condition.
摘要翻译：在用于在蚀刻靶膜中形成孔的等离子体蚀刻方法中，生成至少含有C x F y气体的处理气体的等离子体和质量小于Ar气体质量的稀有气体的处理，交替地重复在第一条件下接通高频电力施加单元，并且通过在第二条件下关闭高频电力施加单元来熄灭处理室中的处理气体的等离子体的处理，来处理处理室。施加来自直流电源的负直流电压，使得第二状态的负直流电压的绝对值变得大于第一状态的负直流电压的绝对值。

5. 发明公开

EP2879471A1 DC POWER SUPPLY DEVICE, AND CONTROL METHOD FOR DC POWER SUPPLY DEVICE 有权转让
标题翻译：直流电源装置以及直流电源装置的控制方法
公开(公告)号：EP2879471A1
公开(公告)日：2015-06-03
申请号：EP12884110.3
申请日：2012-09-07
申请人： Kyosan Electric Mfg. Co. Ltd
发明人： YUZURIHARA, Itsuo , ADACHI, Toshiyuki , KODAMA, Shinichi
IPC分类号： H05H1/46 , C23C14/34
CPC分类号： H05H1/46 , H01J37/32027 , H01J37/32045 , H02M3/33507 , H02M3/337 , H02M2001/007 , H05H7/001 , H05H2001/4682
摘要： Intermittent short-circuit control is performed in the ignition mode, thereby allowing short-circuit current to flow in the current source step-down type chopper. Energy of the short-circuit current is temporarily accumulated in the inductor provided in the current source step-down type chopper. The accumulated energy boosts the output voltage from the direct current power supply device during the period until the next short circuiting, via the current, the multiphase inverter, and the rectifier. The voltage boosting operation where accumulation of the current energy by short circuiting and boosting of the output voltage by conduction are repeated, controls an increase of the output voltage which is applied to the plasma generator.
摘要翻译：在点火模式下执行间歇性短路控制，从而允许短路电流在电流源降压式斩波器中流动。短路电流的能量暂时累积在电流源降压式斩波器中提供的电感器中。累积的能量通过电流，多相逆变器和整流器在直到下一次短路的时间段内增加直流电源装置的输出电压。通过重复通过短路和通过导通对输出电压的升压来累积电流能量的升压操作控制施加到等离子体发生器的输出电压的增加。

6. 发明公开

EP2304070A4 SPUTTERING SYSTEM AND METHOD INCLUDING AN ARC DETECTION SYSTEM 有权
标题翻译：溅射系统和方法的电弧探测系统
公开(公告)号：EP2304070A4
公开(公告)日：2013-12-25
申请号：EP09798356
申请日：2009-04-07
申请人： MKS INSTR INC
发明人： KLEIN JESSE N , HALSTEAD DAVID C , GILBERT MICHAEL R
IPC分类号： C23C14/34 , C23C14/54 , H01J37/32 , H01J37/34
CPC分类号： H01J37/3444 , C23C14/54 , H01J37/32027 , H01J37/32055 , H01J37/32935 , H01J37/32944 , H01J37/34 , H01J37/3476 , H01J2237/0206
摘要： A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

7. 发明公开

EP2107593A3 Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film 审中-公开
标题翻译：用于沉积薄膜的设备，硅系和用于沉积薄膜的方法的基于硅的
公开(公告)号：EP2107593A3
公开(公告)日：2011-12-14
申请号：EP09250884.5
申请日：2009-03-27
申请人： NGK Insulators, Ltd.
发明人： Imaeda, Minoru , Imanishi, Yuichiro , Saito, Takao
IPC分类号： H01J37/32 , C23C14/40
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/515 , C23C16/54 , C23C16/545 , H01J37/32018 , H01J37/32027 , H01J37/32045 , H01J37/3244
摘要： In a silicon-based thin film depositing apparatus 10, a plurality of transparent electrodes 62 are disposed so as to face the corresponding counter electrodes 16 with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices 14a toward the supporting electrodes 18 and also injecting a barrier gas from barrier gas injection orifices 15a in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet 13, and thereby, the pressure in a chamber 12 is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode 16 to deposit a silicon-based thin film. In this method, a DC pulse voltage is applied to perform discharge as described above. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved. Furthermore, by injecting the barrier gas so as to surround the raw material gas, when a carrier gas is mixed with the raw material gas, the flow rate of the carrier gas can be decreased.

8. 发明授权

EP2089894B1 A PLASMA SYSTEM AND MEASUREMENT METHOD 有权
标题翻译：等离子系统及测量方法
公开(公告)号：EP2089894B1
公开(公告)日：2011-06-01
申请号：EP07827129.3
申请日：2007-11-26
申请人： Dublin City University
发明人： DANIELS, Stephen , LAWLER, Justin , LAW, Victor John
IPC分类号： H01J37/32
CPC分类号： H01J37/3299 , H01J37/32027 , H01J37/32935
摘要： A plasma system (1) has a circuit including a DC source (6), a power supply line (9), an electrodes (2, 3), and a return line (18). A perturbation signal source (8) delivers a perturbation signal into the circuit in addition to DC voltage from the DC source (6). Acquisition (10) and analysis (11) systems measure response to the perturbation. The analysis system (11) measures variation in impedance of the circuit and phase between voltage and current in the circuit. It also uses a frequency domain reflectrometry technique to measure signal reflection modulus of a supply line of the circuit over a defined frequency range.

9. 发明公开

EP2068353A4 PLASMA ETCHING DEVICE AND PLASMA ETCHING METHOD 有权
标题翻译： PLASMAÄTZVORRICHTUNGUNDPLASMAÄTZVERFAHREN
公开(公告)号：EP2068353A4
公开(公告)日：2011-01-12
申请号：EP07829301
申请日：2007-10-05
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA , KOBAYASHI NORIYUKI , YONEDA SHIGERU , HANAWA KENICHI , TAHARA SHIGERU , SUGIMOTO MASARU
IPC分类号： H01L21/3065 , H01L21/768 , H05H1/46
CPC分类号： H01J37/32183 , H01J37/32027 , H01J37/32091 , H01J37/32137 , H01J37/32165 , H01J37/32174 , H01J2237/334 , H01J2237/3346 , H01L21/30655 , H01L21/31116 , H01L21/76802 , H01L21/76834

10. 发明授权

EP1781444B1 DC-DC CONVERTER WITH OVER-VOLTAGE PROTECTION CIRCUIT 无效转让
标题翻译：具有浪涌保护电路的DC-DC转换器
公开(公告)号：EP1781444B1
公开(公告)日：2010-12-22
申请号：EP05793020.8
申请日：2005-08-23
申请人： ADVANCED ENERGY INDUSTRIES, INC.
发明人： ILIC, Milan , SIDDABATTULA, Kalyan N. C. , SHILO, Vladislav V.
IPC分类号： B23K10/00 , H05H1/36
CPC分类号： H01J37/32027 , B23K10/006 , H05H1/36
摘要： There is provided by this invention an apparatus and method of supplying to ignite a plasma wherein in the event of an arc a shunt switch is used to divert the power away from the plasma that is incorporated into an over-voltage protection circuit that controls the shunt switch to act as a boost switch when the arc is extinguished such that the stored inductor energy is used to boost the ignition voltage for reigniting the plasma if it is extinguished. When the arc is extinguished, the inductor current is diminished, and the plasma is ignited, then the switch S1 is turned OFF and the inductor energy goes to the plasma and the power supply operates in its normal operating mode.

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