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1. 发明公开

EP3349236A1 RATE ENHANCED PULSED DC SPUTTERING SYSTEM 有权转让
公开(公告)号：EP3349236A1
公开(公告)日：2018-07-18
申请号：EP18158711.4
申请日：2016-04-15
申请人： Advanced Energy Industries, Inc.
发明人： Pelleymounter, Douglas
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35
CPC分类号： H01J37/3476 , C23C14/3485 , C23C14/35 , H01J37/3405 , H01J37/3438 , H01J37/3444 , H01J37/3467 , H01J2237/2485 , H01J2237/327 , H01J2237/332
摘要： A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.

2. 发明公开

EP2961857A1 SPUTTERING APPARATUS 有权转让
标题翻译：溅射装置
公开(公告)号：EP2961857A1
公开(公告)日：2016-01-06
申请号：EP14757416.4
申请日：2014-02-25
申请人： Sputtering Components, Inc.
发明人： CROWLEY, Daniel Theodore , MORSE, Patrick Lawrence , GERMAN, John Robert
IPC分类号： C23C14/34 , C23C14/35
CPC分类号： H01J37/3455 , H01J37/345 , H01J37/347 , H01J37/3476 , H01J37/3479
摘要： A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.
摘要翻译：用于旋转目标阴极的磁控管组件包括刚性支撑结构，可移动地附接到刚性支撑结构的磁棒结构，以及至少一个致动机构，所述致动机构联接到刚性支撑结构并且被配置为将磁棒结构的距离从可旋转目标气缸的表面。磁控管组件还包括位置指示机构，该位置指示机构可操作用于测量磁棒结构相对于可旋转目标圆柱体的表面的位置。通信设备被配置为从磁控管组件的外部接收命令信号并将信息信号传输到磁控管组件的外部。

3. 发明公开

EP2859575A1 ASSEMBLY FOR USE IN A VACUUM TREATMENT PROCESS 审中-公开
标题翻译：安排用在真空处理过程
公开(公告)号：EP2859575A1
公开(公告)日：2015-04-15
申请号：EP13716833.2
申请日：2013-02-04
申请人： UAB Nova Fabrica
发明人： AUDRONIS, Martynas
IPC分类号： H01J37/32
CPC分类号： H01J49/0013 , C23C14/35 , C23C14/52 , C23C14/54 , H01J37/32981 , H01J37/3476 , H01J2237/2002 , H01J2237/332
摘要： An assembly for use in a vacuum treatment process, the assembly including a process changer 1. Gas analysis apparatus to sample and analyse the gas composition within the chamber 1 is provided. The gas analysis apparatus includes a measuring apparatus 14 based either on a miniature mass spectrometer or on a miniature plasma source, which is located within an elongate housing 18. Part of the housing 18 is located within the process chamber 1 such that the gas is analysed within the chamber 1. The process can be controlled in response to the gas analysis

4. 发明公开

EP3189175A4 SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING 有权转让
公开(公告)号：EP3189175A4
公开(公告)日：2018-03-21
申请号：EP16831032
申请日：2016-07-15
申请人： ADVANCED ENERGY IND INC
发明人： CHRISTIE DAVID , LARSON SKIP B
IPC分类号： C23C14/35 , G01R17/02 , H01J37/32 , H01J37/34
CPC分类号： H01J37/3476 , C23C14/3485 , C23C14/3492 , H01J37/3405 , H01J37/3438 , H01J37/3488
摘要： A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.

5. 发明公开

EP2913422A4 THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM 有权
标题翻译：薄膜形成装置中，产生薄膜溅射阴极和方法
公开(公告)号：EP2913422A4
公开(公告)日：2016-06-15
申请号：EP12887060
申请日：2012-10-23
申请人： SHINCRON CO LTD
发明人： MIYAUCHI MITSUHIRO , MURATA TAKANORI , SUGAWARA TAKUYA , SHIONO ICHIRO , JIANG YOUSONG , HAYASHI TATSUYA , NAGAE EKISHU
IPC分类号： C23C14/34 , C23C14/00 , C23C14/06 , C23C14/10 , C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： C23C14/56 , C23C14/0042 , C23C14/0047 , C23C14/0089 , C23C14/0652 , C23C14/10 , C23C14/352 , C23C14/562 , H01J37/321 , H01J37/3244 , H01J37/32752 , H01J37/3405 , H01J37/3411 , H01J37/3417 , H01J37/3429 , H01J37/3476
摘要： Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus 1 forms a thin film of a metal compound on a substrate 43 in a vacuum chamber 21 by sputtering. The vacuum chamber 21 is provided in its inside with targets 63a and b composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas, arranged to produce mutual electromagnetic and pressure interactions with the targets 63a and b. The active species source is provided with gas sources 76 and 77 for supplying the reactive gas, and an energy source 80 for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source 80 is provided between itself and the vacuum chamber 21 with a dielectric window for supplying the energy into the vacuum chamber 21. The dielectric window is arranged in parallel with the substrate 43, or in such a way as inclining towards the targets 63a and b side with an angle of less than 90° to the substrate 43.

6. 发明授权

EP2390380B1 SPUTTERING EQUIPMENT, SPUTTERING METHOD AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE 有权
标题翻译：溅射，溅射及其制备方法的电子设备
公开(公告)号：EP2390380B1
公开(公告)日：2016-03-09
申请号：EP09834517.6
申请日：2009-12-25
申请人： Canon Anelva Corporation
发明人： KITADA, Toru , WATANABE, Naoki , NAGAI, Motonobu
IPC分类号： C23C14/34 , H01F41/18 , H01L43/08 , H01L43/12 , C23C14/54 , H01J37/34
CPC分类号： H01F41/18 , B82Y25/00 , C23C14/34 , C23C14/3464 , C23C14/54 , H01F10/3254 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J37/3455 , H01J37/3476 , H01L43/12

7. 发明公开

EP2586889A4 SPUTTERING DEVICE, DEPOSITION METHOD AND CONTROL DEVICE 审中-公开
标题翻译：溅射分离过程及控制装置
公开(公告)号：EP2586889A4
公开(公告)日：2016-01-20
申请号：EP11797923
申请日：2011-05-12
申请人： CANON ANELVA CORP
发明人： TSUNEKAWA KOJI , SUENAGA MASAHIRO , KONNO TAKEO
IPC分类号： C23C14/34 , G11B5/39 , H01J37/34
CPC分类号： H01J37/3476 , C23C14/3464 , C23C14/505 , C23C14/54 , C23C14/542 , G11B5/3906 , G11B5/3909 , H01J37/32733 , H01J37/34 , H01J37/3429 , H01J37/3435 , H01J37/3473 , H01J2237/20214 , H01J2237/24578 , H01J2237/332
摘要： The present invention provides a sputtering apparatus capable of ensuring a uniform film thickness of a film deposited on wall surfaces or side surface portions of a relief structure, throughout the relief structure, even on a substrate on which the relief structure is formed, as well as having the function of forming a multilayered film having a uniform film thickness on a flat substrate surface. A sputtering apparatus according to one embodiment of the present invention includes a substrate holder (22) for rotatably holding a substrate (21), a cathode unit (40) arranged at a position diagonally opposite to the substrate holder (22), a position sensor (23) for detecting a rotational position of the substrate held on the substrate holder, and a holder rotation controller (51) for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller (51) controls the rotation speed so that the rotation speed of the substrate when the cathode unit (40) is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit (40) is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

8. 发明公开

EP2719793A4 REGENERATION METHOD FOR TANTALUM COIL FOR SPUTTERING AND TANTLUM COIL OBTAINED BY REGENERATION METHOD 有权转让
标题翻译：再生资源FÜREINE SPUTTERING-TANTALSPULE UND DIESEM REGENERATIONSVERFAHREN HERGESTELLTE TANTALSPULE
公开(公告)号：EP2719793A4
公开(公告)日：2014-11-19
申请号：EP12835348
申请日：2012-09-14
申请人： JX NIPPON MINING & METALS CORP
发明人： TSUKAMOTO SHIRO
IPC分类号： C23C14/34 , C23C14/00 , H01J37/34
CPC分类号： H01J37/3476 , C23C14/34 , C23C14/564 , H01J37/32853 , H01J37/3288 , H01J37/34 , H01J37/3447 , Y10T29/49748

9. 发明公开

EP2402980A3 Methods of arc detection and suppression during rf sputtering of a thin film on a substrate 审中-公开
标题翻译：的薄膜的衬底上RF溅射期间电弧检测和抑制的方法
公开(公告)号：EP2402980A3
公开(公告)日：2014-03-05
申请号：EP11171571.0
申请日：2011-06-27
申请人： First Solar Malaysia SDN.BHD
发明人： Halloran, Sean Timothy
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/3444 , H01J37/32935 , H01J37/32944 , H01J37/3476
摘要： Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target 104 onto a substrate 12 are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target 104 to form a plasma 110. Upon formation of an arc 112 extending from the target 104, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target 104 to suppress the arc 112 extending from the target 104. Thereafter, the alternating current from the electrical power supply 102 can be reapplied to the semiconducting target 104.

10. 发明公开

EP2587518A1 Apparatus and Method for depositing Hydrogen-free ta C Layers on Workpieces and Workpiece 有权转让
标题翻译：设备和方法，用于在工件上与工件分离氢 - 自由TA-C层
公开(公告)号：EP2587518A1
公开(公告)日：2013-05-01
申请号：EP11008717.8
申请日：2011-10-31
申请人： Hauzer Techno Coating BV
发明人： PAPA, Frank , TIETEMA, Roel , KOLEV, Ivan , JACOBS, Ruud
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： C23C14/0635 , C23C14/0605 , C23C14/345 , C23C14/3485 , C23C14/35 , C23C14/54 , H01J37/3405 , H01J37/3444 , H01J37/3467 , H01J37/3476
摘要： An apparatus for the manufacture of at least substantially hydrogen-free ta-C layers on substrates (workpieces) of metal or ceramic materials is characterized by at least the following components:
a) a vacuum chamber, which is connectable to an inert gas source and a vacuum pump,
b) a support device for one or more substrates (workpieces) which is inserted into or insertable into the vacuum chamber,
c) at least one graphite cathode having an associated magnet arrangement forming a magnetron, the graphite cathode serving as a source of carbon material,
d) a bias power supply for applying a negative bias voltage to the substrate or substrates on the support device,
e) at least one cathode power supply for the or each cathode, which is connectable to the at least one graphite cathode and to an associated anode and which is designed to transmit high power pulse sequences spaced at (preferably programmable) intervals of time, with each high power pulse sequence comprising a series of high frequency DC pulses adapted to be supplied, optionally after a build-up phase, to the at least one graphite cathode.
摘要翻译： a）真空腔室，在所有其可连接到在惰性气体源和：用于至少基本上无氢的制造中的装置TA-C金属或陶瓷材料的基板上的层（工件）是由至少下列组分特征的真空泵，b），其被插入到或可插入到真空腔室的一个或多个基板（工件）所有的支撑装置，其具有相关联磁铁排列c）至少一个石墨阴极形成的磁控管，石墨阴极用作碳材料，D），用于施加负偏置电压施加到所述支撑装置上的基板或基片的偏压电源，e）在所述或每个阴极的至少一个阴极电源，所有的源极可连接到所述至少一个石墨阴极和阳极以在相关联的和全被设计成发射在时间（优选地是可编程的）间隔隔开的高功率脉冲串，具有包括一系列高F音的各高功率脉冲序列 requency DC脉冲angepasst到任选的建立阶段之后被供应到至少一个石墨阴极。

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