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1. 发明公开

EP3349236A1 RATE ENHANCED PULSED DC SPUTTERING SYSTEM 有权转让
公开(公告)号：EP3349236A1
公开(公告)日：2018-07-18
申请号：EP18158711.4
申请日：2016-04-15
申请人： Advanced Energy Industries, Inc.
发明人： Pelleymounter, Douglas
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35
CPC分类号： H01J37/3476 , C23C14/3485 , C23C14/35 , H01J37/3405 , H01J37/3438 , H01J37/3444 , H01J37/3467 , H01J2237/2485 , H01J2237/327 , H01J2237/332
摘要： A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.

2. 发明公开

EP2961857A1 SPUTTERING APPARATUS 有权转让
标题翻译：溅射装置
公开(公告)号：EP2961857A1
公开(公告)日：2016-01-06
申请号：EP14757416.4
申请日：2014-02-25
申请人： Sputtering Components, Inc.
发明人： CROWLEY, Daniel Theodore , MORSE, Patrick Lawrence , GERMAN, John Robert
IPC分类号： C23C14/34 , C23C14/35
CPC分类号： H01J37/3455 , H01J37/345 , H01J37/347 , H01J37/3476 , H01J37/3479
摘要： A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.
摘要翻译：用于旋转目标阴极的磁控管组件包括刚性支撑结构，可移动地附接到刚性支撑结构的磁棒结构，以及至少一个致动机构，所述致动机构联接到刚性支撑结构并且被配置为将磁棒结构的距离从可旋转目标气缸的表面。磁控管组件还包括位置指示机构，该位置指示机构可操作用于测量磁棒结构相对于可旋转目标圆柱体的表面的位置。通信设备被配置为从磁控管组件的外部接收命令信号并将信息信号传输到磁控管组件的外部。

3. 发明公开

EP2859575A1 ASSEMBLY FOR USE IN A VACUUM TREATMENT PROCESS 审中-公开
标题翻译：安排用在真空处理过程
公开(公告)号：EP2859575A1
公开(公告)日：2015-04-15
申请号：EP13716833.2
申请日：2013-02-04
申请人： UAB Nova Fabrica
发明人： AUDRONIS, Martynas
IPC分类号： H01J37/32
CPC分类号： H01J49/0013 , C23C14/35 , C23C14/52 , C23C14/54 , H01J37/32981 , H01J37/3476 , H01J2237/2002 , H01J2237/332
摘要： An assembly for use in a vacuum treatment process, the assembly including a process changer 1. Gas analysis apparatus to sample and analyse the gas composition within the chamber 1 is provided. The gas analysis apparatus includes a measuring apparatus 14 based either on a miniature mass spectrometer or on a miniature plasma source, which is located within an elongate housing 18. Part of the housing 18 is located within the process chamber 1 such that the gas is analysed within the chamber 1. The process can be controlled in response to the gas analysis

4. 发明授权

EP2719793B1 REGENERATION METHOD FOR TANTALUM COIL FOR SPUTTERING 有权转让
标题翻译：钽线圈溅射再生方法
公开(公告)号：EP2719793B1
公开(公告)日：2017-11-08
申请号：EP12835348.9
申请日：2012-09-14
申请人： JX Nippon Mining & Metals Corporation
发明人： TSUKAMOTO, Shiro
IPC分类号： C23C14/34 , C23C14/00 , H01J37/34
CPC分类号： H01J37/3476 , C23C14/34 , C23C14/564 , H01J37/32853 , H01J37/3288 , H01J37/34 , H01J37/3447 , Y10T29/49748

5. 发明公开

EP3089196A1 RATE ENHANCED PULSED DC SPUTTERING SYSTEM 有权转让
标题翻译： GEPULSTES GLEICHSTROM-SPUTTERSYSTEM的RATENERWEITERTES GEPULSTES GLEICHSTROM-SPUTTERSYSTEM
公开(公告)号：EP3089196A1
公开(公告)日：2016-11-02
申请号：EP16165652.5
申请日：2016-04-15
申请人： Advanced Energy Industries, Inc.
发明人： Pelleymounter, Douglas
IPC分类号： H01J37/34
CPC分类号： H01J37/3476 , C23C14/3485 , C23C14/35 , H01J37/3405 , H01J37/3438 , H01J37/3444 , H01J37/3467 , H01J2237/2485 , H01J2237/327 , H01J2237/332
摘要： A pulsed direct current sputtering system and method are disclosed. The system has a plasma chamber with two targets, two magnetrons and one anode, a first power source, and a second power source. The first power source is coupled to the first magnetron and the anode, and provides a cyclic first-power-source voltage with a positive potential and a negative potential during each cycle between the anode and the first magnetron. The second power source is coupled to the second magnetron and the anode, and provides a cyclic second-power-source voltage. The controller phase-synchronizes and controls the first-power-source voltage and second-power-source voltage to apply a combined anode voltage, and phase-synchronizes a first magnetron voltage with a second magnetron voltage, wherein the combined anode voltage applied to the anode has a magnitude of at least 80 percent of a magnitude of a sum of the first magnetron voltage and the second magnetron voltage.
摘要翻译：公开了一种脉冲直流溅射系统和方法。该系统具有具有两个靶的等离子体室，两个磁控管和一个阳极，第一电源和第二电源。第一电源耦合到第一磁控管和阳极，并且在阳极和第一磁控管之间的每个循环期间提供具有正电位和负电位的循环第一电源电压。第二电源耦合到第二磁控管和阳极，并提供循环的二次电源电压。控制器相位同步并控制第一电源电压和第二电源电压以施加组合的阳极电压，并且将第一磁控管电压与第二磁控管电压相位同步，其中施加到阳极具有第一磁控管电压和第二磁控管电压之和的幅度的至少80％的量值。

6. 发明公开

EP3075876A1 METHOD AND APPARATUS FOR DEPOSITING A MATERIAL 有权
标题翻译： VERFAHREN UND VORRICHTUNG ZUM AUFTRAGEN EINES材料
公开(公告)号：EP3075876A1
公开(公告)日：2016-10-05
申请号：EP16163357.3
申请日：2016-03-31
申请人： SPTS Technologies Limited
发明人： BURGESS, Stephen , HYNDMAN, Rhonda , RASTOGI, Amit , LIMA, Eduardo Paulo , WIDDICKS, Clive , RICH, Paul , HAYMORE, Scott , COOK, Daniel
IPC分类号： C23C14/35 , C23C14/34 , C23C14/06 , H01J37/34
CPC分类号： C23C14/0641 , C23C14/0617 , C23C14/3485 , C23C14/35 , C23C14/351 , H01J37/32669 , H01J37/3405 , H01J37/3429 , H01J37/345 , H01J37/3452 , H01J37/3461 , H01J37/3467 , H01J37/3476
摘要： 1. A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;
in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.
摘要翻译： 1.一种通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上的方法; 其中溅射材料从靶溅射，其中所述靶和所述衬底被间隔在2.5至10cm的范围内分开，并且在所述腔室内产生二次磁场，这引起由所述脉冲DC磁控管装置产生的等离子体朝向腔室的一个或多个壁膨胀。

7. 发明公开

EP2954370A4 DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES 有权
标题翻译：缺陷减少电致变色器件LAYERS
公开(公告)号：EP2954370A4
公开(公告)日：2016-09-14
申请号：EP14749144
申请日：2014-02-07
申请人： VIEW INC
发明人： KAILASAM SRIDHAR K , FRIEDMAN ROBIN , GILLASPIE DANE , PRADHAN ANSHU A , ROZBICKI ROBERT T , MEHTANI DISHA
IPC分类号： G02F1/15
CPC分类号： G02F1/1533 , C23C14/028 , C23C14/06 , C23C14/0635 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/08 , C23C14/081 , C23C14/083 , C23C14/086 , C23C14/34 , G02F1/1309 , G02F1/133345 , G02F1/15 , G02F1/1523 , G02F1/155 , G02F2001/1536 , G02F2001/1555 , G02F2201/508 , H01B5/14 , H01B13/00 , H01J37/3429 , H01J37/3476
摘要： Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

8. 发明公开

EP2390380A4 SPUTTERING EQUIPMENT, SPUTTERING METHOD AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE 有权
标题翻译：溅射，溅射及其制备方法的电子设备
公开(公告)号：EP2390380A4
公开(公告)日：2014-01-08
申请号：EP09834517
申请日：2009-12-25
申请人： CANON ANELVA CORP
发明人： KITADA TORU , WATANABE NAOKI , NAGAI MOTONOBU
IPC分类号： C23C14/34 , C23C14/54 , H01F41/18 , H01J37/34 , H01L43/08 , H01L43/12
CPC分类号： H01F41/18 , B82Y25/00 , C23C14/34 , C23C14/3464 , C23C14/54 , H01F10/3254 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J37/3455 , H01J37/3476 , H01L43/12

9. 发明公开

EP2304070A4 SPUTTERING SYSTEM AND METHOD INCLUDING AN ARC DETECTION SYSTEM 有权
标题翻译：溅射系统和方法的电弧探测系统
公开(公告)号：EP2304070A4
公开(公告)日：2013-12-25
申请号：EP09798356
申请日：2009-04-07
申请人： MKS INSTR INC
发明人： KLEIN JESSE N , HALSTEAD DAVID C , GILBERT MICHAEL R
IPC分类号： C23C14/34 , C23C14/54 , H01J37/32 , H01J37/34
CPC分类号： H01J37/3444 , C23C14/54 , H01J37/32027 , H01J37/32055 , H01J37/32935 , H01J37/32944 , H01J37/34 , H01J37/3476 , H01J2237/0206
摘要： A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

10. 发明授权

EP2036998B1 Verfahren zur Herstellung einer Multilayerschicht und Vorrichtung zur Durchführung des Verfahrens 有权
标题翻译：一种用于生产多层结构和装置用于实现该方法的工序
公开(公告)号：EP2036998B1
公开(公告)日：2012-09-26
申请号：EP08020218.7
申请日：2003-12-03
申请人： Leybold Optics GmbH
发明人： Scherer, Michael, Dr. , Pistner, Jürgen , Lehrnert, Walter , Hagedorn, Harro , Deppisch, Gerd , Röder, Mario
IPC分类号： C23C14/00 , C23C14/02 , C23C14/08 , C23C14/54
CPC分类号： H01J37/3473 , C23C14/0078 , C23C14/0094 , C23C14/024 , C23C14/08 , C23C14/547 , H01J37/34 , H01J37/3405 , H01J37/3476 , H01J2237/3321

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