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1. 发明授权

EP1364231B1 A SELF-CLEANING OPTIC FOR EXTREME ULTRAVIOLET LITHOGRAPHY 有权
标题翻译：自洁面光盘驱动器的EUV光刻
公开(公告)号：EP1364231B1
公开(公告)日：2006-03-15
申请号：EP01987139.1
申请日：2001-12-12
申请人： EUV Limited Liability Corporation
发明人： KLEBANOFF, Leonard,E. Sandia National Laboratories , STULEN, Richard, H. Sandia National Laboratories
IPC分类号： G02B1/10 , G21K1/06
CPC分类号： B82Y10/00 , B08B17/02 , B82Y40/00 , G03F1/24 , G03F7/708 , G21K1/062 , G21K2201/067
摘要： A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or 'capping' layer which in combination with incident radiation and gaseous molecular species such as O2, H2, H2O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

2. 发明公开

EP1075672A1 PROTECTION OF LITHOGRAPHIC COMPONENTS FROM PARTICLE CONTAMINATION 有权
标题翻译：从颗粒污染物保护光刻组分
公开(公告)号：EP1075672A1
公开(公告)日：2001-02-14
申请号：EP99914187.2
申请日：1999-03-26
申请人： EUV Limited Liability Corporation
发明人： KLEBANOFF, Leonard, E. , RADER, Daniel, J.
IPC分类号： G03F7/20
CPC分类号： G03F7/70866 , G03F7/70983
摘要： A system (100) that employs thermophoresis to protect lithographic surfaces from particle deposition and operates in an environment where the pressure is substantially constant and can be sub-atmospheric. The system (thermophoretic pellicle) comprises an enclosure (110) that surrounds a lithographic component (120) whose surface (125) is being protected from particle deposition. The enclosure is provided with means (130) for introducing a flow of gas (127) into the chamber and at least one aperture (135) that provides for access to the lithographic surface for the entry and exit of a beam of radiation, for example, and further controls gas flow into a surrounding low pressure environment such that a higher pressure is maintained within the enclosure and over the surface being protected. The lithographic component can be heated or, alternatively the walls (110) of the enclosure can be cooled to establish a temperature gradient between the surface of the lithographic component and the walls of the enclosure, thereby enabling the thermophoretic force that resists particle deposition.
摘要翻译：一种采用热泳以保护光刻表面免于颗粒沉积的系统（100），并且在压力基本恒定且可能低于大气压的环境中运行。该系统（热泳薄膜）包括外壳（110），该外壳（110）围绕其表面（125）被保护免受颗粒沉积的光刻部件（120）。外壳设有用于将气流（127）引入腔室的装置（130）和至少一个孔口（135），所述至少一个孔口例如提供通向光刻表面的入口和出口的辐射束并且进一步控制气体流入周围的低压环境，使得在外壳内和被保护的表面上保持较高的压力。可以加热平版印刷部件，或者可以冷却外壳的壁（110）以在平版印刷部件的表面和外壳的壁之间建立温度梯度，由此实现抵抗颗粒沉积的热泳力。

3. 发明授权

EP1399781B1 REPAIR OF AMPLITUDE DEFECTS IN A MULTILAYER COATING 有权
标题翻译：损伤无损多层涂层校正
公开(公告)号：EP1399781B1
公开(公告)日：2013-05-22
申请号：EP02780937.5
申请日：2002-04-18
申请人： EUV Limited Liability Corporation
发明人： STEARNS, Daniel, G. , SWEENEY, Donald, W. , MIRKARIMI, Paul, B. , CHAPMAN, Henry, N.
IPC分类号： G03F1/24 , G03F1/74 , G02B5/08 , G02B5/28
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G02B5/0891 , G02B5/285 , G03F1/74

4. 发明授权

EP1344110B1 MITIGATION OF RADIATION INDUCED SURFACE CONTAMINATION 有权
标题翻译：表面污染的减少辐射引起的
公开(公告)号：EP1344110B1
公开(公告)日：2010-03-10
申请号：EP00988384.4
申请日：2000-12-21
申请人： EUV Limited Liability Corporation
发明人： KLEBANOFF, Leonard, E. , STULEN, Richard, H.
IPC分类号： G03F7/20
CPC分类号： G03F7/70883 , B08B7/0057 , G03F7/70925

5. 发明公开

EP1127294A1 WAFER CHAMBER HAVING A GAS CURTAIN FOR EXTREME-UV LITHOGRAPHY 有权
标题翻译：一种用于极端紫外光刻有半导体板腔室和一个气帘
公开(公告)号：EP1127294A1
公开(公告)日：2001-08-29
申请号：EP99955163.3
申请日：1999-10-27
申请人： EUV Limited Liability Corporation
发明人： KANOUFF, Michael, P. , RAY-CHAUDHURI, Avijit, K.
IPC分类号： G03F7/20
CPC分类号： G03F7/70866 , G03F7/70233 , G03F7/70908
摘要： An EUVL device includes a wafer chamber (41) that is separated from the upstream optics by a barrier (40) having an aperture (43) that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer (45) positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants gas removes the contaminants by entrainment.

6. 发明公开

EP1103018A1 DIFFRACTIVE ELEMENT IN EXTREME-UV LITHOGRAPHY CONDENSER 审中-公开
标题翻译：凝汽器衍射元件FOR EXTREME紫外光刻
公开(公告)号：EP1103018A1
公开(公告)日：2001-05-30
申请号：EP99920370.6
申请日：1999-05-07
申请人： EUV Limited Liability Corporation
发明人： SWEATT, William, C. , RAY-CHAUDHURI, Avijit, K.
IPC分类号： G03F7/20
CPC分类号： G03F7/702 , G03F7/70066 , G03F7/70158 , Y10S359/90
摘要： Condensers (30, 40, 50, 60) having a mirror (60) with a diffraction grating in projection lithography using extreme ultra-violet significantly enhances critical dimension control. The diffraction grating has the effect of smoothing the illumination at the camera's entrance pupil with minimum light loss. Modeling suggests that critical dimension control for 100 nm features can be improved from 3 nm to less than about 0.5 nm.

7. 发明授权

EP1307768B1 CONDENSER WITH DIFFRACTIVE SPECTRAL FILTER FOR EUV LITHOGRAPHY 有权
标题翻译：与衍射光谱的EUV光刻冷凝器
公开(公告)号：EP1307768B1
公开(公告)日：2016-03-09
申请号：EP01961694.5
申请日：2001-07-20
申请人： EUV Limited Liability Corporation
发明人： SWEATT, William, C. , TICHENOR, Daniel, A. , BERNARDEZ, Luis, J.
IPC分类号： G02B5/18 , G02B5/20 , G03F7/20
CPC分类号： G03F7/70158 , G02B27/30 , G03F7/70066 , G03F7/70191 , G03F7/702 , G03F7/70575 , G03F7/70875 , G21K1/06 , G21K1/10 , G21K2201/06 , G21K2201/064 , G21K2201/067

8. 发明授权

EP1428416B1 DISCHARGE SOURCE WITH GAS CURTAIN FOR PROTECTING OPTICS FROM PARTICLES 有权
标题翻译：与气帘排放源头上保障BEFORE颗粒OPTICS
公开(公告)号：EP1428416B1
公开(公告)日：2011-10-26
申请号：EP02759209.6
申请日：2002-07-29
申请人： EUV Limited Liability Corporation
发明人： FORNACIARI, Neal, R. , KANOUFF, Michael, P.
IPC分类号： H05G2/00 , G03F7/20
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , G03F7/70908 , H05G2/005
摘要： A gas curtain device is employed to deflect debris that is generated by an extreme ultraviolet and soft x-ray radiation discharge source such as an electric discharge plasma source. The gas curtain device projects a stream of gas over the path of the radiation to deflect debris particles into a direction that is different from that of the path of the radiation. The gas curtain can be employed to prevent debris accumulation on the optics used in photolithography. Preferably, the gas curtain flows at supersonic speeds.

9. 发明授权

EP1127294B1 Apparatus for extreme UV lithography comprising a wafer chamber and gas curtain 有权
标题翻译：一种用于极端紫外光刻有半导体板腔室和一个气帘
公开(公告)号：EP1127294B1
公开(公告)日：2006-09-20
申请号：EP99955163.3
申请日：1999-10-27
申请人： EUV Limited Liability Corporation
发明人： KANOUFF, Michael, P. , RAY-CHAUDHURI, Avijit, K.
IPC分类号： G03F7/20
CPC分类号： G03F7/70866 , G03F7/70233 , G03F7/70908
摘要： An EUVL device includes a wafer chamber (41) that is separated from the upstream optics by a barrier (40) having an aperture (43) that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer (45) positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants gas removes the contaminants by entrainment.

10. 发明公开

EP1428416A1 DISCHARGE SOURCE WITH GAS CURTAIN FOR PROTECTING OPTICS FROM PARTICLES 有权
标题翻译：与气帘排放源头上保障BEFORE颗粒OPTICS
公开(公告)号：EP1428416A1
公开(公告)日：2004-06-16
申请号：EP02759209.6
申请日：2002-07-29
申请人： EUV Limited Liability Corporation
发明人： FORNACIARI, Neal, R. , KANOUFF, Michael, P.
IPC分类号： H05G2/00 , G03F7/20
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , G03F7/70908 , H05G2/005
摘要： A gas curtain device is employed to deflect debris that is generated by an extreme ultraviolet and soft x-ray radiation discharge source such as an electric discharge plasma source. The gas curtain device projects a stream of gas over the path of the radiation to deflect debris particles into a direction that is different from that of the path of the radiation. The gas curtain can be employed to prevent debris accumulation on the optics used in photolithography. Preferably, the gas curtain flows at supersonic speeds.

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