基本信息:
- 专利标题： MITIGATION OF MULTILAYER DEFECTS ON A RETICLE
- 专利标题（中）：失败的投影屏幕还原
- 申请号：EP01966608.0 申请日：2001-09-05
- 公开(公告)号：EP1336130B1 公开(公告)日：2010-03-17
- 发明人： STEARNS, Daniel, G. , SWEENEY, Donald, W. , MIRKARIMI, Paul, B.
- 申请人： EUV Limited Liability Corporation
- 申请人地址： 2200 Mission College Boulevard Santa Clara, CA 95052 US
- 专利权人： EUV Limited Liability Corporation
- 当前专利权人： EUV Limited Liability Corporation
- 当前专利权人地址： 2200 Mission College Boulevard Santa Clara, CA 95052 US
- 代理机构： Ebner von Eschenbach, Jennifer
- 优先权： US669390 20000926
- 国际公布： WO2002027404 20020404
- 主分类号： G03F1/14
- IPC分类号： G03F1/14 ; G02B5/08 ; G03F1/00
摘要：
A method is provided for repairing defects in a multilayer coating layered onto a reticle blank used in an extreme ultraviolet lithography (EUVL) system. Using high lateral spatial resolution, energy is deposited in the multilayer coating in the vicinity of the defect. Thiscan be accomplished using a focused electron beam, focused ion beam or a focused electromagnetic radiation. The absorbed energy will cause a structural modification of the film,producing a localized change in the film thickness. The change in film thickness can be controlled with sub-nanometer accuracy by adjusting the energy dose. The lateral spatial resolution of the thickness modification is controlled by the localization of the energy deposition. The film thickness is adjusted locally to correct the perturbation of the reflectedfield. For example, when the structural modification is a localized film contraction, the repairof a defect consists of flattening a mound or spreading out the sides of a depression.
公开/授权文献:
- EP1336130A2 MITIGATION OF MULTILAYER DEFECTS ON A RETICLE 公开/授权日：2003-08-20
IPC结构图谱:
| G | 物理 |
| --G03 | 摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术 |
| ----G03F | 图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备 |
| ------G03F1/00 | 用于图纹面的照相制版的原版的制备 |
| --------G03F1/14 | .以细部结构为特征的原稿，例如，基片层、覆盖层、薄膜环 |