专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3333900A1 THIN FILM TRANSISTOR AND ARRAY SUBSTRATE, AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE 有权
公开(公告)号：EP3333900A1
公开(公告)日：2018-06-13
申请号：EP16770671.2
申请日：2016-01-13
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/786 , H01L21/336 , H01L27/12
摘要： A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.

2. 发明公开

EP3291304A1 OXIDE SEMICONDUCTOR THIN FILM, THIN-FILM TRANSISTOR, AND PREPARATION METHOD AND DEVICE 有权
标题翻译：氧化物半导体薄膜，薄膜晶体管，以及制备方法和装置
公开(公告)号：EP3291304A1
公开(公告)日：2018-03-07
申请号：EP15883644.5
申请日：2015-09-02
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/24 , H01L29/786 , H01L21/34 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02 , H01L21/02189 , H01L21/02194 , H01L21/02565 , H01L21/34 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
摘要翻译：本公开公开了属于平板显示器领域的氧化物半导体薄膜，薄膜晶体管，制造方法和器件。氧化物半导体薄膜由含有锆和铟的氧化物构成。制造氧化物半导体薄膜的方法包括使用含锆和铟的氧化物制备靶，并且溅射靶以获得氧化物半导体薄膜。

4. 发明授权

EP3297031B1 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE AND PREPARATION METHODS THEREFOR, AND DISPLAY DEVICE 有权
公开(公告)号：EP3297031B1
公开(公告)日：2020-01-08
申请号：EP15885767.2
申请日：2015-10-09
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L21/336 , H01L29/786

5. 发明公开

EP3297031A1 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE AND PREPARATION METHODS THEREFOR, AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，阵列基板及其制备方法和显示装置
公开(公告)号：EP3297031A1
公开(公告)日：2018-03-21
申请号：EP15885767.2
申请日：2015-10-09
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/786 , H01L29/24 , H01L29/66
摘要： The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.
摘要翻译：本发明提供一种TFT，阵列基板及其制造方法和显示装置。用于制造TFT的方法包括通过图案化工艺在透明基板上形成半导体有源层的图案的步骤，并且半导体有源层的图案包括硼化镧图案。

6. 发明公开

EP3121840A1 THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY PANEL 有权
标题翻译：德黑兰，德黑兰，德黑兰，阿拉伯联合酋长国
公开(公告)号：EP3121840A1
公开(公告)日：2017-01-25
申请号：EP15882903.6
申请日：2015-10-09
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L21/34 , H01L29/786
摘要： This invention discloses a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.
摘要翻译：本发明公开了一种薄膜晶体管及其制备方法，阵列基板和显示面板，以解决当通过背沟道产生金属氧化物薄膜晶体管时有源层易于被腐蚀的问题蚀刻工艺。该制备方法包括：在基底基板上形成栅电极金属薄膜，并通过图案化工艺使栅电极金属薄膜形成包括栅电极的栅电极金属层; 在栅电极金属层上形成栅电极绝缘层; 在栅电极绝缘层上形成有源层; 在活性层上制备金属纳米颗粒层，所述金属纳米颗粒层用作蚀刻保护层; 在其上完成上述工艺的基底基板上形成源极和漏极金属薄膜，并且允许源极和漏极金属薄膜通过一个源极和漏极电极金属薄膜形成源极和漏极电极，其中所述源电极和所述漏电极覆盖所述金属纳米颗粒层的一部分; 在含氧气氛中去除或氧化未被源电极和漏电极覆盖的金属纳米颗粒层的部分; 以及在所述源极和漏极电极金属层上形成钝化层。

7. 发明授权

EP3291304B1 OXIDE SEMICONDUCTOR THIN FILM, THIN-FILM TRANSISTOR, AND PREPARATION METHOD AND DEVICE 有权
公开(公告)号：EP3291304B1
公开(公告)日：2020-11-04
申请号：EP15883644.5
申请日：2015-09-02
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/786 , H01L29/66 , H01L21/02

8. 发明公开

EP3405980A1 OXIDE SEMICONDUCTOR MATERIAL, THIN-FILM TRANSISTOR, AND FABRICATION METHOD THEREOF 有权转让
公开(公告)号：EP3405980A1
公开(公告)日：2018-11-28
申请号：EP16812667.0
申请日：2016-05-20
申请人： BOE Technology Group Co., Ltd. , South China University Of Technology (SCUT)
发明人： YAN, Liangchen , YUAN, Guangcai , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1222 , H01L29/66969
摘要： A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.

9. 发明公开

EP3403281A1 ACTIVE LAYER, THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS AND FABRICATION METHODS 有权
公开(公告)号：EP3403281A1
公开(公告)日：2018-11-21
申请号：EP16871752.8
申请日：2016-12-29
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YAN, Liangchen , YUAN, Guangcai , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L29/24 , H01L29/786
CPC分类号： H01L29/78603 , H01L21/34 , H01L27/1225 , H01L29/24 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： The present disclosure provides an active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof. A method for fabricating an active layer in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer. The thin film is made of a material selected to provide the active layer with a carrier concentration of at least approximately 1×1017 cm−3 and a carrier mobility of at least approximately 20 cm2/Vs.

10. 发明公开

EP3320555A1 THIN-FILM-TRANSISTOR, THIN-FILM-TRANSISTOR ARRAY SUBSTRATE, FABRICATING METHODS THEREOF, AND DISPLAY PANEL 有权
标题翻译：薄膜晶体管，薄膜晶体管阵列基板，其制造方法和显示面板
公开(公告)号：EP3320555A1
公开(公告)日：2018-05-16
申请号：EP15871296.8
申请日：2015-12-10
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , YAN, Liangchen , XU, Xiaoguang , WANG, Lei , PENG, Junbiao , LAN, Linfeng
IPC分类号： H01L21/34 , H01L21/44 , H01L29/786 , H01L29/423 , H01L21/77 , H01L27/12
CPC分类号： H01L27/1214 , H01L21/28008 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/1292 , H01L29/4908 , H01L29/66969 , H01L29/786 , H01L29/7869
摘要： In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式