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1. 发明公开

EP2299789A1 PLASMA GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译： PLASMAERZEUGUNGSVORRICHTUNG UND PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2299789A1
公开(公告)日：2011-03-23
申请号：EP09750378.3
申请日：2009-05-21
申请人： EMD Corporation , Ando, Yasunori
发明人： ANDO, Yasunori , EBE, Akinori , WATANABE, Masanori
IPC分类号： H05H1/46 , C23C16/507 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32174 , H01J37/32183 , H01J37/3266
摘要： A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
摘要翻译：形成真空容器的一部分的凸缘具有由绝缘框架包围的矩形开口。设置有板状射频天线导体13，以覆盖开口，绝缘框被夹持。在这种结构中，射频电源通过匹配盒连接到沿着射频天线导体的长度的一端，另一端连接到地，并且提供电力使得射频电流从射频天线导体的一端流向另一端。通过该方法，可以降低射频天线导体的阻抗，能够有效地产生电子温度低的高密度等离子体。

2. 发明授权

EP2408275B1 PLASMA PROCESSING DEVICE 有权转让
标题翻译：等离子体处理装置
公开(公告)号：EP2408275B1
公开(公告)日：2017-01-11
申请号：EP10750873.1
申请日：2010-03-10
申请人： EMD Corporation , Tokyo Electron Limited
发明人： SETSUHARA, Yuichi , NISHIMURA, Eiichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321

3. 发明公开

EP2615888A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译： PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2615888A1
公开(公告)日：2013-07-17
申请号：EP10856946.8
申请日：2010-09-06
申请人： EMD Corporation
发明人： EBE, Akinori , WATANABE, Masanori
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/3211 , H05H1/46 , H05H2001/4652
摘要： The present invention provides an internal antenna type plasma processing device which is easily maintained and capable of producing stable plasma. The plasma processing device has a plurality of antenna units 20 provided in the top wall 111 of a vacuum chamber 11. Each of the antenna units 20 includes: a dielectric housing 21 provided to protrude into the vacuum chamber 11 from the top wall 111 of the vacuum chamber 11; a cover 22 having a second gas discharge port 25 for discharging the atmosphere in the housing to the outside of the vacuum chamber; and a radio-frequency antenna 23 formed by a conductor tube which is fixed to the cover 22 by way of a feedthrough 24 and has gas passage holes 232 in its tube walls. An inert gas is supplied into the tube of the radio-frequency antenna 23, and the inside of the housing 21 is filled with the inert gas provided through the gas passage holes 232. The inert gas is discharged to the outside of the vacuum chamber 11 through the second gas discharge port 25.
摘要翻译：本发明提供一种易于维护并能够产生稳定等离子体的内部天线型等离子体处理装置。等离子体处理装置具有设置在真空室11的顶壁111中的多个天线单元20.每个天线单元20包括：电介质壳体21，设置成从顶壁111突出到真空室11中真空室11; 具有用于将壳体中的气氛排出到真空室的外部的第二气体排出口25的盖22; 以及由导体管形成的射频天线23，其通过馈通24固定到盖22，并且在其管壁中具有气体通过孔232。向射频天线23的管供给惰性气体，并且通过气体通过孔232提供惰性气体来填充壳体21的内部。惰性气体被排出到真空室11的外部通过第二气体排出口25。

4. 发明公开

EP2408275A1 PLASMA PROCESSING APPARATUS 有权转让
标题翻译：等离子体处理装置
公开(公告)号：EP2408275A1
公开(公告)日：2012-01-18
申请号：EP10750873.1
申请日：2010-03-10
申请人： EMD Corporation , Tokyo Electron Limited
发明人： SETSUHARA, Yuichi , NISHIMURA, Eiichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/321
摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container and improving the uniformity in the density distribution of the plasma, while preventing formation of particles or contamination of a base body due to the sputtering of the conductor of the radio-frequency antenna. A plasma processing device 10 according to the present invention is an inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container 11; an antenna-placing section 12 provided between an inner surface 111B and an outer surface 111A of a wall of the vacuum container 11; a radio-frequency antenna placed in the antenna-placing section 12, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member 15 separating the antenna-placing section 12 and an internal space 112 of the vacuum container, wherein the radio-frequency antenna 13 has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves.
摘要翻译：本发明提供一种等离子体处理装置，该等离子体处理装置能够在真空容器内诱发强射频电场并且提高等离子体的密度分布的均匀性，同时防止由于溅射造成的基体的颗粒的形成或污染射频天线的导体。根据本发明的等离子体处理装置10是使用射频放电的感应耦合等离子体处理装置，包括：真空容器11; 设置在真空容器11的壁的内表面111B和外表面111A之间的天线放置部分12; 放置在天线放置部分12中的高频天线，高频天线终止而不完成一圈; 以及将天线放置部分12和真空容器的内部空间112分开的电介质分离部件15，其中，高频天线13的长度等于或小于射频波长的四分之一。

5. 发明公开

EP2345750A1 THIN FILM-FORMING SPUTTERING DEVICE 有权转让
标题翻译： DÜNNSCHICHTBILDENDESPUTTERVORRICHTUNG
公开(公告)号：EP2345750A1
公开(公告)日：2011-07-20
申请号：EP09809534.2
申请日：2009-08-25
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori , HAN, Jeong
IPC分类号： C23C14/40 , H05H1/46
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：本发明的目的是提供能够以高速率进行溅射处理的薄膜形成溅射系统。薄膜形成溅射系统10包括：真空容器11; 位于真空容器11内的目标支架13; 位于真空容器内的目标支架13; 与靶保持器13相对的基板保持件14; 用于在目标保持器13和基板支架14之间施加电压的电源15; 设置在目标保持器13后面的磁控溅射磁体12，用于产生具有与目标T平行的分量的磁场; 以及射频天线16，用于在由磁控溅射磁体12产生的磁场具有等于或高于预定水平的强度的目标T附近的空间内产生射频感应耦合等离子体。由射频天线16产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

6. 发明授权

EP2345750B1 THIN FILM-FORMING SPUTTERING SYSTEMS 有权转让
公开(公告)号：EP2345750B1
公开(公告)日：2019-01-02
申请号：EP09809534.2
申请日：2009-08-25
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori , HAN, Jeon Geon
IPC分类号： C23C14/34 , H05H1/46 , H01J37/32 , H01J37/34 , C23C14/35

7. 发明公开

EP2753154A1 ANTENNA FOR PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING APPARATUS USING ANTENNA 审中-公开
标题翻译：天线FÜREINE PLASMABEHANDLUNGSVORRICHTUNG UND PLASMABEHANDLUNGSVORRICHTUNG MIT DER ANTENNE
公开(公告)号：EP2753154A1
公开(公告)日：2014-07-09
申请号：EP11871785.9
申请日：2011-08-30
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/44 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32651 , C23C14/358 , C23C16/509 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J2237/0266 , H05H1/46 , H05H2001/4667
摘要： Provided is a radio-frequency antenna with which the blocking or weakening of a radio-frequency induction electric field will not occur even if a thin-film material deposits on the antenna surface. A radio-frequency antenna 10 includes a linear antenna conductor 13, a dielectric protective pipe 14 provided around the antenna conductor 13, and a deposit shield 15 provided around the protective pipe 14, the deposit shield 15 covering at least one portion of the protective pipe 14 and having at least one opening 153 on any line extending along the length of the antenna conductor 13. Although the thin-film material adheres to the surfaces of the protective pipe and the deposit shield, the deposited substance has at least one discontinuous portion in the longitudinal direction of the antenna conductor. Therefore, in the case where the thin-film material is electrically conductive, the blocking of the radio-frequency induction electric field is prevented. In the case where the thin-film material is not electrically conductive, an attenuation in the intensity of the radio-frequency induction electric field is suppressed.
摘要翻译：提供一种射频天线，即使薄膜材料沉积在天线表面上也不会发生射频感应电场的阻塞或弱化。射频天线10包括线状天线导体13，设置在天线导体13周围的介质保护管14和设置在保护管14周围的沉积屏蔽15，沉积屏蔽15覆盖保护管的至少一部分 14，并且在沿着天线导体13的长度延伸的任何线上具有至少一个开口153.尽管薄膜材料粘附到保护管和沉积屏蔽的表面上，但沉积物质具有至少一个不连续部分天线导体的纵向。因此，在薄膜材料导电的情况下，防止了射频感应电场的阻塞。在薄膜材料不导电的情况下，抑制了射频感应电场强度的衰减。

8. 发明公开

EP2615889A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：EP2615889A1
公开(公告)日：2013-07-17
申请号：EP11823665.2
申请日：2011-09-09
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , C23C16/507 , H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32477 , H05H2001/4667
摘要： The present invention provides a plasma processing device which can generate plasma with a higher density than that in an external antenna type, and can prevent the impurities from being mixed into an object to be processed and can prevent particles from being generated, which are problems that occur in an internal antenna type. The plasma processing device according to the present invention has: a metallic vacuum chamber 11; an antenna-placing section 14 in which a radio-frequency antenna 18 is placed inside a through-hole (hollow space) provided in an upper wall 112 of the vacuum chamber 11; and a dielectric separating plate 15 covering the entire inner surface 1121 of the upper wall 112. In this plasma processing device, the entire inner surface 1121 side of the upper wall 112 is covered with the separating plate 15 so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface 1121 and the separating plate 15. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented.
摘要翻译：本发明提供一种等离子体处理装置，其能够生成比外部天线型的等离子体的密度更高的等离子体，并且能够防止杂质混入到被处理物中，能够防止产生粒子，发生在内部天线类型中。根据本发明的等离子体处理装置具有：金属真空室11; 天线放置部分14，其中高频天线18放置在设置在真空室11的上壁112中的通孔（中空空间）内; 以及覆盖上壁112的整个内表面1121的电介质分离板15.在该等离子体处理装置中，上壁112的整个内表面1121侧被分离板15覆盖，使得不同水平面当在内表面1121和分隔板15之间不使用较小的分隔板时，因此防止了由于在不同水平面上形成粘附材料而产生的颗粒的产生。

9. 发明公开

EP2546385A1 SPUTTERING DEVICE 审中-公开
标题翻译：溅射装置
公开(公告)号：EP2546385A1
公开(公告)日：2013-01-16
申请号：EP11753370.3
申请日：2011-03-08
申请人： EMD Corporation
发明人： EBE, Akinori , WATANABE, Masanori
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3464 , H01J37/34 , H01J37/3488
摘要： The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.
摘要翻译：本发明的目的在于提供一种溅射系统，其能够在溅射靶表面附近有效地产生高密度等离子体并且以高速率形成膜。本发明的目的还在于提供一种结构简单的大面积溅射系统和等离子体处理系统，并且使溅射靶易于附着/拆卸，维护或操作。本发明提供了一种溅射系统，其中电感耦合天线导体板被附接到真空室的一部分，其中：溅射靶板在其等离子体形成空间侧被附接到电感耦合天线导体; 天线导体的一端连接射频电源，另一端通过电容接地。可以提供多个天线导体以形成大面积溅射系统。

10. 发明公开

EP3896717A1 HIGH FREQUENCY ANTENNA AND PLASMA PROCESSING DEVICE 有权
公开(公告)号：EP3896717A1
公开(公告)日：2021-10-20
申请号：EP21168282.8
申请日：2021-04-14
申请人： EMD Corporation , Tomoegawa Co., Ltd.
发明人： EBE, Akinori , TSUDA, Hajime , MORIUCHI, Hideki
IPC分类号： H01J37/32 , H01Q1/00
摘要： [OBJECT]
To provide a radio-frequency antenna through which a high amount of current can be efficiently passed even at a radio-frequency level for plasma generation, as well as a plasma processing device utilizing the radio-frequency antenna.
[MEANS FOR SOLVING PROBLEM]
A radio-frequency antenna (10) according to the present invention includes a metal fiber sheet. A plasma processing device according to the present invention includes: a vacuum container (21) including a wall (211) having an opening (213); a radio-frequency antenna (10) including a metal fiber sheet and located at the opening (213); and a dielectric protection plate (12) located closer to the interior of the vacuum container (21) than the radio-frequency antenna (10) and configured to close the opening (213) in a gas-tight manner. The radio-frequency antenna (10) including a metal fiber sheet has a larger surface area and an accordingly lower impedance to a radio-frequency current than a radio-frequency antenna including a metal plate having the same outer shape. Therefore, it allows a radio-frequency current commonly used for plasma generation (e.g., at a frequency of 13.56 MHz) to be more efficiently passed through in large amounts.

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