专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP2299789A1 PLASMA GENERATING APPARATUS AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译： PLASMAERZEUGUNGSVORRICHTUNG UND PLASMAVERARBEITUNGSVORRICHTUNG
公开(公告)号：EP2299789A1
公开(公告)日：2011-03-23
申请号：EP09750378.3
申请日：2009-05-21
申请人： EMD Corporation , Ando, Yasunori
发明人： ANDO, Yasunori , EBE, Akinori , WATANABE, Masanori
IPC分类号： H05H1/46 , C23C16/507 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32174 , H01J37/32183 , H01J37/3266
摘要： A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
摘要翻译：形成真空容器的一部分的凸缘具有由绝缘框架包围的矩形开口。设置有板状射频天线导体13，以覆盖开口，绝缘框被夹持。在这种结构中，射频电源通过匹配盒连接到沿着射频天线导体的长度的一端，另一端连接到地，并且提供电力使得射频电流从射频天线导体的一端流向另一端。通过该方法，可以降低射频天线导体的阻抗，能够有效地产生电子温度低的高密度等离子体。

2. 发明授权

EP2408275B1 PLASMA PROCESSING DEVICE 有权转让
标题翻译：等离子体处理装置
公开(公告)号：EP2408275B1
公开(公告)日：2017-01-11
申请号：EP10750873.1
申请日：2010-03-10
申请人： EMD Corporation , Tokyo Electron Limited
发明人： SETSUHARA, Yuichi , NISHIMURA, Eiichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/3065 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321

3. 发明授权

EP2345750B1 THIN FILM-FORMING SPUTTERING SYSTEMS 有权转让
公开(公告)号：EP2345750B1
公开(公告)日：2019-01-02
申请号：EP09809534.2
申请日：2009-08-25
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori , HAN, Jeon Geon
IPC分类号： C23C14/34 , H05H1/46 , H01J37/32 , H01J37/34 , C23C14/35

4. 发明公开

EP2753154A1 ANTENNA FOR PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING APPARATUS USING ANTENNA 审中-公开
标题翻译：天线FÜREINE PLASMABEHANDLUNGSVORRICHTUNG UND PLASMABEHANDLUNGSVORRICHTUNG MIT DER ANTENNE
公开(公告)号：EP2753154A1
公开(公告)日：2014-07-09
申请号：EP11871785.9
申请日：2011-08-30
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/44 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32651 , C23C14/358 , C23C16/509 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J2237/0266 , H05H1/46 , H05H2001/4667
摘要： Provided is a radio-frequency antenna with which the blocking or weakening of a radio-frequency induction electric field will not occur even if a thin-film material deposits on the antenna surface. A radio-frequency antenna 10 includes a linear antenna conductor 13, a dielectric protective pipe 14 provided around the antenna conductor 13, and a deposit shield 15 provided around the protective pipe 14, the deposit shield 15 covering at least one portion of the protective pipe 14 and having at least one opening 153 on any line extending along the length of the antenna conductor 13. Although the thin-film material adheres to the surfaces of the protective pipe and the deposit shield, the deposited substance has at least one discontinuous portion in the longitudinal direction of the antenna conductor. Therefore, in the case where the thin-film material is electrically conductive, the blocking of the radio-frequency induction electric field is prevented. In the case where the thin-film material is not electrically conductive, an attenuation in the intensity of the radio-frequency induction electric field is suppressed.
摘要翻译：提供一种射频天线，即使薄膜材料沉积在天线表面上也不会发生射频感应电场的阻塞或弱化。射频天线10包括线状天线导体13，设置在天线导体13周围的介质保护管14和设置在保护管14周围的沉积屏蔽15，沉积屏蔽15覆盖保护管的至少一部分 14，并且在沿着天线导体13的长度延伸的任何线上具有至少一个开口153.尽管薄膜材料粘附到保护管和沉积屏蔽的表面上，但沉积物质具有至少一个不连续部分天线导体的纵向。因此，在薄膜材料导电的情况下，防止了射频感应电场的阻塞。在薄膜材料不导电的情况下，抑制了射频感应电场强度的衰减。

5. 发明公开

EP2615889A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：EP2615889A1
公开(公告)日：2013-07-17
申请号：EP11823665.2
申请日：2011-09-09
申请人： EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/3065
CPC分类号： H05H1/46 , C23C16/507 , H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32477 , H05H2001/4667
摘要： The present invention provides a plasma processing device which can generate plasma with a higher density than that in an external antenna type, and can prevent the impurities from being mixed into an object to be processed and can prevent particles from being generated, which are problems that occur in an internal antenna type. The plasma processing device according to the present invention has: a metallic vacuum chamber 11; an antenna-placing section 14 in which a radio-frequency antenna 18 is placed inside a through-hole (hollow space) provided in an upper wall 112 of the vacuum chamber 11; and a dielectric separating plate 15 covering the entire inner surface 1121 of the upper wall 112. In this plasma processing device, the entire inner surface 1121 side of the upper wall 112 is covered with the separating plate 15 so that surfaces in different level otherwise formed when a smaller separating plate is used is not formed between the inner surface 1121 and the separating plate 15. Therefore, the generation of particles caused by the formation of adhered materials on the surfaces in different level is prevented.
摘要翻译：本发明提供一种等离子体处理装置，其能够生成比外部天线型的等离子体的密度更高的等离子体，并且能够防止杂质混入到被处理物中，能够防止产生粒子，发生在内部天线类型中。根据本发明的等离子体处理装置具有：金属真空室11; 天线放置部分14，其中高频天线18放置在设置在真空室11的上壁112中的通孔（中空空间）内; 以及覆盖上壁112的整个内表面1121的电介质分离板15.在该等离子体处理装置中，上壁112的整个内表面1121侧被分离板15覆盖，使得不同水平面当在内表面1121和分隔板15之间不使用较小的分隔板时，因此防止了由于在不同水平面上形成粘附材料而产生的颗粒的产生。

6. 发明公开

EP2546385A1 SPUTTERING DEVICE 审中-公开
标题翻译：溅射装置
公开(公告)号：EP2546385A1
公开(公告)日：2013-01-16
申请号：EP11753370.3
申请日：2011-03-08
申请人： EMD Corporation
发明人： EBE, Akinori , WATANABE, Masanori
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3464 , H01J37/34 , H01J37/3488
摘要： The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.
摘要翻译：本发明的目的在于提供一种溅射系统，其能够在溅射靶表面附近有效地产生高密度等离子体并且以高速率形成膜。本发明的目的还在于提供一种结构简单的大面积溅射系统和等离子体处理系统，并且使溅射靶易于附着/拆卸，维护或操作。本发明提供了一种溅射系统，其中电感耦合天线导体板被附接到真空室的一部分，其中：溅射靶板在其等离子体形成空间侧被附接到电感耦合天线导体; 天线导体的一端连接射频电源，另一端通过电容接地。可以提供多个天线导体以形成大面积溅射系统。

7. 发明公开

EP4333564A1 SPUTTERING DEVICE 审中-实审
公开(公告)号：EP4333564A1
公开(公告)日：2024-03-06
申请号：EP22795770.1
申请日：2022-04-26
申请人： EMD Corporation , Osaka Research Institute of Industrial Science and Technology , Ogawa, Soichi
发明人： EBE, Akinori , KONDO, Yusuke , KAKEHI, Yoshiharu , SATOH, Kazuo , IKUHARA, Shiro , IWASAKI, Shinichi , OGAWA, Soichi
IPC分类号： H05H1/46 , C23C14/34 , C23C14/35
摘要： A sputtering apparatus (10) includes: a first target holder (111) and a second target holder (112) holding a first target (T1) and a second target (T2) respectively such that their surfaces face each other; a substrate holder (16) provided on a side of a plasma generation region (R) which is a region between the first target (T1) and the second target (T2) respectively held by the first target holder (111) and the second target holder (112); a first main magnetic field generation unit (121) and a second main magnetic field generation unit (122) respectively provided on the back surface sides of the first target holder (111) and the second target holder (112), and configured to generate a first main magnetic field and a second main magnetic field respectively on surfaces of the first target (T1) and the second target (T2) held, in which magnets are disposed such that opposite poles face each other; a power supply configured to generate an electric field in a plasma generation region (R) by applying predetermined potentials to the first target holder (111) and the second target holder (112); a radio-frequency electromagnetic field generation unit (17) configured to generate a radio-frequency electromagnetic field in the plasma generation region (R), which is provided on a side of the plasma generation region (R) facing the substrate holder (16) with the plasma generation region (R) between them; and a plasma source gas introduction unit (15) configured to introduce a plasma source gas into the plasma generation region (R), wherein means for generating a magnetic field does not exist at the ends of the first target holder (111) and the second target holder (112) on a side of radio-frequency electromagnetic field generation unit (17).

8. 发明公开

EP4152897A1 PLASMA GENERATING DEVICE 审中-实审
公开(公告)号：EP4152897A1
公开(公告)日：2023-03-22
申请号：EP21805021.9
申请日：2021-05-07
申请人： EMD Corporation
发明人： EBE, Akinori
IPC分类号： H05H1/24 , F01N3/028
摘要： Provided is a dielectric barrier discharge type plasma generator that is provided in a gas treatment apparatus for generating plasma by ionizing gas flowing in a gas flow path and can prevent electric leakage and undesirable discharge from occurring. The plasma generator 10 includes an AC power supply 14, a power supply electrode 111 and a ground electrode 112, one of which is disposed in a gas flow path and the other of which is a conductive wall constituting the gas flow path, an inflexible connection member 13 configured to electrically connect the AC power supply 14 and the power supply electrode 111, and an insulating material (power supply side insulating material 121, ground side insulating material 122) covering a side of one of the power supply electrode 111 and the ground electrode 112, the side facing the other electrode. By using the inflexible connection member 13, even if vibration is transmitted from the gas flowing in the gas flow path to the connection member 13 via the power supply electrode 111, the connection member 13 does not unexpectedly come into contact with or does not come close to a member other than the power supply electrode in the plasma generator 10, so that it is possible to prevent electric leakage and undesirable discharge from occurring.

9. 发明公开

EP2602813A1 PLASMA TREATMENT DEVICE 审中-公开
标题翻译： PLASMABEHANDLUNGSVORRICHTUNG
公开(公告)号：EP2602813A1
公开(公告)日：2013-06-12
申请号：EP11814649.7
申请日：2011-08-02
申请人： Osaka University , EMD Corporation
发明人： SETSUHARA, Yuichi , EBE, Akinori
IPC分类号： H01L21/205 , C23C16/509 , H01L21/3065 , H05H1/46
CPC分类号： H01L21/02104 , C23C16/24 , C23C16/509 , H01J37/3211 , H01J37/32357 , H01J37/32422 , H01J37/32568 , H01J37/32623 , H01J37/32834 , H01J37/32899 , H01J37/32954 , H01L21/465 , H05H1/46 , H05H2001/4667
摘要： The problem addressed by the present invention is to provide a plasma processing device capable of easily controlling the energy distribution of electrons in a cloud of plasma according to the kind of gas molecules or their dissociation energy. A plasma processing device 10 according to the present invention includes a plasma processing chamber 1l, a plasma producing chamber 12 communicating with the plasma processing chamber 11, a radio-frequency antenna 16 for producing plasma, a plasma control plate 17 for controlling the energy of electrons in the plasma, as well as an operation rod 171 and a moving mechanism 172 for regulating the position of the plasma control plate 17. In this plasma processing device 10, the energy distribution of the electrons of the plasma produced in the plasma producing chamber 12 can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate 17 by simply moving the operation rod 171 in its longitudinal direction by the moving mechanism 172. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.
摘要翻译：本发明解决的问题是提供一种等离子体处理装置，其能够根据气体分子的种类或其解离能容易地控制等离子体云中的电子的能量分布。根据本发明的等离子体处理装置10包括等离子体处理室11，与等离子体处理室11连通的等离子体产生室12，用于产生等离子体的射频天线16，用于控制能量的等离子体控制板17 等离子体中的电子，以及用于调节等离子体控制板17的位置的操作杆171和移动机构172.在该等离子体处理装置10中，等离子体产生室中产生的等离子体的电子的能量分布可以通过简单地通过移动机构172将操作杆171沿其纵向方向移动来调节射频天线16和等离子体控制板17之间的距离来控制。因此，适合于气体分子种类的等离子体处理被解离和/或其解离能可以容易地进行。

10. 发明公开

EP2216804A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：EP2216804A1
公开(公告)日：2010-08-11
申请号：EP08848700.4
申请日：2008-11-12
申请人： EMD Corporation , Evatech Co., Ltd.
发明人： SETSUHARA, Yuichi , EBE, Akinori , INO, Eiji , ISHIHARA, Shinichiro , ASHIDA, Hajime , WATANABE, Akira
IPC分类号： H01L21/205 , C23C16/509 , H01L21/3065
CPC分类号： C23C16/503 , C03C17/22 , C03C2217/28 , C03C2218/153 , C23C16/24 , C23C16/509 , H01J37/321 , H01J37/3211 , H01J37/32715
摘要： The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber 11; one or plural antenna supporters (plasma generator supporters) 12 projecting into the internal space 111 of the vacuum chamber 11; radio-frequency antennas (plasma generators) 13 attached to each antenna supporter 12; and a pair of substrate body holders 16 provided across the antenna supporter 12 in the vacuum chamber 11, for holding a planar substrate body to be processed 21.
摘要翻译：本发明的目的在于提供一种等离子体处理装置，该等离子体处理装置用于对平面状的被处理基板进行等离子体处理，该等离子体处理装置能够良好地均匀地生成等离子体，并且能够高效率地使用等离子体，生产率高。即，根据本发明的等离子体处理装置包括：真空室11; 伸入真空室11的内部空间111的一个或多个天线支撑件（等离子体发生器支撑件）12; 连接到每个天线支架12的射频天线（等离子体发生器）13; 以及一对基板主体保持件16，设置在真空室11中的天线支撑件12的两侧，用于保持平面的待处理基板主体21。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式