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71. 发明公开

EP1374313A1 ELECTRONIC DEVICES COMPRISING THIN-FILM TRANSISTORS, AND THEIR MANUFACTURE 审中-公开
标题翻译：与薄膜晶体管和其生产过程电子元件
公开(公告)号：EP1374313A1
公开(公告)日：2004-01-02
申请号：EP02714386.6
申请日：2002-03-21
申请人： Koninklijke Philips Electronics N.V.
发明人： ROHLFING, Frank, W.
IPC分类号： H01L29/786 , H01L21/336 , H01L21/266
CPC分类号： H01L29/66757 , H01L21/0331 , H01L21/0332 , H01L21/0337 , H01L21/266 , H01L21/32139 , H01L29/66772 , H01L29/78621 , H01L29/78627
摘要： This invention relates to the fabrication of thin-film transistors (TFTs) on a substrate (4) such as a glass or insulating polymer substrate for use in an active-matrix liquid-crystal display or other large area electronic device. A method of forming a TFT is described which includes the deposition of a masking layer (8) over a semiconductor film (2) and the removal of portions of the masking layer (8) to form a plurality of holes therethrough of a predetermined size and distribution. The perforated portion (26,28) of the masking layer (8) serves to mask partially the semiconductor film (2) during a dopant implantation step to form a field relief region (20,22) simultaneously with definition of the source and drain regions (16,18).

72. 发明公开

EP1359613A2 Method of fabricating high density sub-lithographic features on a substrate 审中-公开
标题翻译： Verfahren zur Herstellung von sublithographischen，hoghintegrieten Strukturen auf einem Substrat
公开(公告)号：EP1359613A2
公开(公告)日：2003-11-05
申请号：EP03252668.3
申请日：2003-04-28
申请人： Hewlett-Packard Company
发明人： Anthony, Thomas C.
IPC分类号： H01L21/308 , H01L21/033
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0005 , H01L21/0337
摘要： A method of fabricating high density sub-lithographic features is disclosed. The method includes the use of common microelectronic processes including sub-lithographic spacer formation and Damascene processes to form a plurality of sub-lithographic spacers (33, 53, 83, 93) on vertical side wall surfaces of features carried by a substrate (11, 71). The sub-lithographic spacers (33, 53, 83, 93) have a period that is less than a minimum resolution λ of a lithographic system. The density of features, including the sub-lithographic spacers (33, 53, 83, 93), within a minimum resolution λ of the lithographic system, can be increased by subsequent depositions of material, followed by anisotropic etching to selectively remove horizontal surfaces of the deposited material. Optionally, the spacer materials can be conformally deposited.
摘要翻译：公开了一种制造高密度亚光刻特征的方法。该方法包括使用通常的微电子工艺，包括亚光刻间隔物形成和镶嵌工艺，以在衬底（11,11）承载的特征的垂直侧壁表面上形成多个亚光刻间隔物（33,53,83,93） 71）。亚光刻间隔物（33,53,83,93）具有小于光刻系统的最小分辨率λ的周期。在光刻系统的最小分辨率λ内的特征的密度（包括亚光刻间隔物（33,53,83,93））可以通过随后的材料沉积而增加，随后进行各向异性蚀刻以选择性地去除沉积材料。任选地，间隔物材料可以共形沉积。

73. 发明授权

EP0686999B1 Pattern formation in the fabrication of microelectronic devices 失效
标题翻译：图案生成在微电子组件的制造
公开(公告)号：EP0686999B1
公开(公告)日：2003-08-13
申请号：EP95108351.8
申请日：1995-05-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Moslehi, Mehrdad M.
IPC分类号： H01L21/033 , H01L21/321 , G03F7/00
CPC分类号： H01L21/0337 , G03F7/0042 , G03F7/265 , H01L21/0332 , H01L21/3086 , H01L21/3105 , H01L21/32139 , Y10S430/167 , Y10S430/168 , Y10S438/911 , Y10S438/942 , Y10S438/95 , Y10S438/981

74. 发明公开

EP1186015A1 LOW TEMPERATURE OXIDATION OF CONDUCTIVE LAYERS FOR SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：氧化导电层的半导体制造低温的
公开(公告)号：EP1186015A1
公开(公告)日：2002-03-13
申请号：EP00937744.1
申请日：2000-05-25
申请人： Infineon Technologies North America Corp.
发明人： GENZ, Oliver , MICHAELIS, Alexander
IPC分类号： H01L21/316 , H01L21/033 , C25D11/02
CPC分类号： C25D11/02 , C25D11/022 , H01L21/0332 , H01L21/0337 , H01L21/31687
摘要： A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer (100), depositing a valve metal (110) on the wafer, placing the wafer in an electrochemical cell (200) such that a solution (114) including electrolytes interacts with the valve metal to form a metal oxide (111) when a potential difference is provided between the valve metal (110) and the solution (114) and processing the wafer using the metal oxide layer.

75. 发明授权

EP0732624B1 Fabrication method with energy beam 失效
标题翻译： Herstellungsverfahren mit einemEnergiebündel
公开(公告)号：EP0732624B1
公开(公告)日：2001-10-10
申请号：EP96104171.2
申请日：1996-03-15
申请人： EBARA CORPORATION , Hatamura, Yotaro
发明人： Hatakeyama, Masahiro , Ichiki, Katsunori , Kato, Takao , Hatamura, Yotaro , Nakao, Masayuki
IPC分类号： G03F7/00 , H01L21/033 , H01L21/266 , G03F7/20 , H01J37/30
CPC分类号： H01L21/3086 , G03F7/001 , G03F7/2037 , G03F7/70358 , H01J9/025 , H01J2209/0223 , H01L21/0331 , H01L21/0337

76. 发明公开

EP1115156A1 FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： Herstellungsverfahrenfüreine ferroelektrische Speichervorrichtung
公开(公告)号：EP1115156A1
公开(公告)日：2001-07-11
申请号：EP00935527.2
申请日：2000-06-02
申请人： Seiko Epson Corporation
发明人： SHIMODA, Tatsuya , NISHIKAWA, Takao
IPC分类号： H01L27/10 , H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/0337 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of manufacturing a ferroelectric memory device includes a step of forming a first region (24) having surface characteristics allowing the material for the members of a ferroelectric capacitor section to be preferentially deposited, and a second region (26) having surface characteristics allowing the material for the capacitor section to be less deposited than the first region (24), and a step of providing the material on the base (10) to form a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24) of the base (10).
摘要翻译：制造铁电存储器件的方法包括形成具有允许优先沉积强电介质电容器部件的部件的材料的表面特性的第一区域（24）的步骤，以及具有表面特性的第二区域（26），其允许电容器部分的材料比第一区域（24）更少沉积;以及在基底（10）上提供材料以形成第一电极（32），铁电体膜（34）和第二电极（10）的第一区域（24）中的（36）。

77. 发明授权

EP0755067B1 Verfahren zur Herstellung von sublithographischen Ätzmasken 有权转让
标题翻译：一种用于制造亚光刻的蚀刻掩模处理
公开(公告)号：EP0755067B1
公开(公告)日：1999-09-22
申请号：EP96111249.7
申请日：1996-07-11
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Kerber, Martin, Dr. rer. nat.
IPC分类号： H01L21/033
CPC分类号： H01L27/11517 , H01L21/0337 , Y10S438/947 , Y10S977/888

78. 发明公开

EP0909988A1 Photolithographic processing method 失效
标题翻译：光刻处理方法
公开(公告)号：EP0909988A1
公开(公告)日：1999-04-21
申请号：EP98124753.9
申请日：1991-09-25
申请人： CANON KABUSHIKI KAISHA
发明人： Komatsu, Toshiyuki , Sato, Yasue , Kawate, Shin-Ichi
IPC分类号： G03F7/004 , H01L21/311
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/00 , G03F7/0035 , G03F7/0042 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139
摘要： The present invention provides a processing method which comprises a first step of depositing on a substrate (271) a film to be etched (272); a second step of subjecting the film to be etched, to selective irradiation with light to form a protective film having a partially modified surface (273); and a third step of subjecting said film to be etched, to dry etching using said protective film as an etching mask. Said first step and said second step are continuously carried out plural times to respectively deposit on said substrate said film to be etched and said protective film in plurality (274,275,276,277), and thereafter said third step is carried out.
摘要翻译：本发明提供了一种处理方法，包括：第一步，在衬底（271）上沉积待蚀刻的膜（272）; 对所述膜进行蚀刻的第二步骤，用光进行选择性照射以形成具有部分改性表面的保护膜（273）; 以及使用所述保护膜作为蚀刻掩模对所述膜进行蚀刻以进行干法蚀刻的第三步骤。所述第一步骤和所述第二步骤连续进行多次，以分别将所述待蚀刻膜和所述多个保护膜（274,275,276,277）沉积在所述衬底上，然后执行所述第三步骤。

79. 发明公开

EP0908781A3 Photolithographic processing method and apparatus 失效
标题翻译：空值
公开(公告)号：EP0908781A3
公开(公告)日：1999-04-21
申请号：EP98124751.3
申请日：1991-09-25
申请人： CANON KABUSHIKI KAISHA
发明人： Komatsu, Toshiyuki , Sato, Yasue , Kawate, Shin-Ichi
IPC分类号： G03F7/004 , H01L21/308 , C23C16/04
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/00 , G03F7/0035 , G03F7/0042 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139
摘要： The present invention provides a processing method comprising subjecting the surface of a substrate (803) to selective irradiation with light after the desired circuit pattern in an atmosphere of a modifying gas capable of modifying the surface, while maintaining the temperature (809,812) of said surface of the substrate to a given temperature range within which a pressure of said modifying gas reaches a saturated vapor pressure, to form on said surface of the substrate a surface-modified layer having a pattern structure; and etching the surface-unmodified layer using said surface-modified layer as a protective film. Furthermore, the present invention provides a processing apparatus comprising a light source, a latent image forming chamber (808), and an etching chamber (818); wherein said apparatus further comprises an evacuating means; said latent image forming chamber comprises a modifying gas feeding means (805b), a holder (802b), and an optical system (813,814,815,816); and said etching chamber comprises a holder (802c), and an etching gas feeding means (805d).
摘要翻译：一种处理方法包括：第一步骤，在作为样本的基板上沉积半导体，金属和绝缘体中的任一个的膜; 在第一步骤中沉积的膜的表面经受具有给定能量的光束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步骤的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

80. 发明公开

EP0732624A3 Fabrication method with energy beam and fabrication apparatus therewith 失效
标题翻译： Herstellungsverfahren mit einemEnergiebündelund Einrichtungdafür
公开(公告)号：EP0732624A3
公开(公告)日：1998-03-11
申请号：EP96104171.2
申请日：1996-03-15
申请人： EBARA CORPORATION , Hatamura, Yotaro
发明人： Hatakeyama, Masahiro , Ichiki, Katsunori , Kato, Takao , Hatamura, Yotaro , Nakao, Masayuki
IPC分类号： G03F7/00 , H01L21/033
CPC分类号： H01L21/3086 , G03F7/001 , G03F7/2037 , G03F7/70358 , H01J9/025 , H01J2209/0223 , H01L21/0331 , H01L21/0337
摘要： A method and apparatus are presented for producing a three-dimensional ultra-fine micro-fabricated structures of the order of µm and less for use in advanced optical communication systems and quantum effect devices. The basic components are an energy beam source, a mask member and a specimen stage. Because the mask member is an independent component, various combinations of relative movements of the mask member with respect to the beam axis and/or workpiece can be made with high precision to produce curved or slanted surfaces on a workpiece, thereby producing a multiple lines or array of convex or concave micro-lenses. Other examples of fine-structures include deposition of thin films on a multiple line pattern or in an array pattern. Because of the flexibility of fabrication method and material of fabrication, labyrinth seals having curved surface with grooved structure can be used as friction reduction means for bearing components. The fine groove dimensions of the order of nm is possible. Energy beams can be any of fast atomic beams, ion beams, electron beam, laser beams, radiation beams, X-ray beams and radical particle beams. Parallel beams are often used, but when a focused beam is used, a technique of reduced projection imaging can be utilized to produce a fine-structure of the order of nm.
摘要翻译：本发明提供一种用于制造用于先进光通信系统和量子效应器件的数量级以下的三维超微细微结构的方法和装置。基本部件是能量束源，掩模构件和样品台。由于掩模构件是独立的部件，所以可以高精度地制造掩模构件相对于射束轴线和/或工件的相对运动的各种组合，以在工件上产生弯曲或倾斜的表面，从而产生多条线或阵列的凸或微型微透镜。精细结构的其他实例包括在多线图案或阵列图案中沉积薄膜。由于制造方法和制造材料的灵活性，具有带槽结构的曲面的迷宫式密封件可用作轴承部件的摩擦减小装置。 nm的细槽尺寸是可能的。能量束可以是快速原子束，离子束，电子束，激光束，辐射束，X射线束和自由基粒子束中的任何一种。通常使用平行光束，但是当使用聚焦光束时，可以利用减小投影成像的技术来产生nm数量级的精细结构。

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