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    • 2. 发明公开
    • HALFTONE PHASE SHIFT PHOTOMASK BLANK AND MAKING METHOD
    • 半色调相移照相空白及制作方法
    • EP3196698A1
    • 2017-07-26
    • EP17150778.3
    • 2017-01-10
    • Shin-Etsu Chemical Co., Ltd.
    • KOSAKA, TakuroINAZUKI, YukioKANEKO, Hideo
    • G03F1/32G03F1/68
    • G03F1/32G03F1/68
    • A halftone phase shift film is formed on a transparent substrate by reactive sputtering using a silicon target, an inert gas, and a nitrogen-containing reactive gas. A hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In a transition mode sputtering step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise.
    • 通过使用硅靶,惰性气体和含氮反应气体的反应性溅射在透明基板上形成半色调相移膜。 通过扫描反应气体的流速绘制滞后曲线,并绘制扫描期间的溅射电压或电流与反应气体的流速的关系曲线。 在对应于从大于提供滞后的反应气体流量的下限的范围到小于上限的范围的区域中的溅射的过渡模式溅射步骤中,目标功率,惰性气体流量和/或反应性 气体流量连续或逐步增加或减少。
    • 8. 发明公开
    • MEMBER FOR MASKING FILM, PROCESS FOR PRODUCING MASKING FILM USING SAME, AND PROCESS FOR PRODUCING PHOTOSENSITIVE RESIN PRINTING PLATE
    • ELEMENT FOR A的屏蔽薄膜,用于生产掩膜用这一点,一种用于生产感光树脂压盘
    • EP2416217A1
    • 2012-02-08
    • EP10758856.8
    • 2010-03-25
    • LINTEC Corporation
    • IKEDA, TakeshiTSUTSUI, ToshihiroMITSUHASHI, Masafumi
    • G03F1/00G03F7/00
    • G03F7/202G03F1/68G03F7/20
    • A member for masking films which includes a base film transparent to ultraviolet rays and, on one surface thereof, an ultraviolet-shielding resin layer capable of being removed by irradiation with laser light beams and haivng an average thickness of 0.1 to 30 µm, wherein the ultraviolet-shielding resin layer is a multilayer structure composed of two or more layers including a resin layer (A) having a high carbon black content and a resin layer (B) having a low carbon black content, the layer (A) and the layer (B) being located on the base-film side and on the printing-plate side of ultraviolet-shielding resin layer, respectively, and the ultraviolet-shielding resin layer has specific optical properties. This member for masking films has the following features: the accurate and precise removal of the ultraviolet-shielding resin layer using a low-energy laser beam gives areas with uniform light transmittance; the ultraviolet-shielding resin is resistant to scratches; and positioning is easy, and when making close contact with a plate, air trapping is less likely to occur so that the entire surface easily comes into close contact with a printing material.
    • 一种用于掩蔽膜部件,其包括基膜,透明的紫外线,并且在其一个表面上,以紫外线屏蔽能够通过用激光束和haivng到的0.1〜30微米的平均厚度照射而除去树脂层,worin的 紫外线屏蔽性树脂层是两层或更多层包括具有高炭黑含量的树脂层(A)和具有低炭黑含量,层(A)的树脂层(B)构成的多层结构,并且该层 (B)位于所述基膜侧和上分别紫外线屏蔽树脂层,印刷板侧,紫外线屏蔽性树脂层具有特定的光学特性。 此构件用于掩蔽膜具有以下特征:所述准确和精确的去除使用低能量的激光束得到具有均匀的光透射率区域中的紫外线屏蔽性树脂层的; 紫外线屏蔽树脂是耐划痕; 和定位是容易的,并与制版紧密接触时,空气滞留是不太可能发生这样做的整个表面容易与印刷材料紧密接触。
    • 9. 发明公开
    • METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY
    • 方法校正光学邻近效应,设计和分划板制造用不同形状的束光刻
    • EP2321840A2
    • 2011-05-18
    • EP09810441.7
    • 2009-08-10
    • D2S, Inc.
    • FUJIMURA, AkiraGLASSER, Lance
    • H01L21/027G03F7/20
    • B82Y40/00B82Y10/00G03F1/36G03F1/68G03F1/78H01J37/3174
    • The present invention describes a method for using variable shaped beam (VSB) shots to form a desired pattern on a surface, where the union of the plurality of VSB shots deviates from the desired pattern. Additionally, the VSB shots are allowed to overlap each other, and the dosages of the shots are allowed to vary. Similar methods are disclosed for optical proximity correction (OPC), fracturing, mask data preparation, and proximity effect correction. A method for creating glyphs is also disclosed, in which patterns that would result on a surface from one or a group of VSB shots are pre-calculated. In some embodiments, an optimization technique may be used to minimize shot count. The method of the present disclosure may be used, for example, in the process of manufacturing an integrated circuit by optical lithography using a reticle, or in the process of manufacturing an integrated circuit using direct write.
    • 本发明描述用于使用可变成形波束(VSB)发射,以形成表面,其中,VSB发射的多个联合与期望图案上叉开所希望的图案的方法。 另外,所述VSB发射被允许重叠海誓山盟,和镜头的剂量被允许改变。 类似的方法是光盘为游离缺失光学邻近校正(OPC),压裂,掩模数据准备和邻近效应校正。 一种用于创建图示符gibt游离缺失盘,其中图案做将导致从一个表面或一组VSB发射的上方法是预先计算的。 在一些实施例中,在优化技术可以被用来最小化发射次数。 可以使用掩模版可以使用本公开的方法中,例如,在制造集成电路的过程中通过光学光刻,或者在制造使用直接写入集成电路的过程。
    • 10. 发明公开
    • METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY
    • 方法设计和生产螺纹CROSS用不同形状的束光刻
    • EP2321839A2
    • 2011-05-18
    • EP09810459.9
    • 2009-08-18
    • D2S, Inc.
    • FUJIMURA, AkiraTUCKER, Michael
    • H01L21/027G03F7/00G03F7/20
    • H01J37/3174B82Y10/00B82Y40/00G03F1/68G03F1/78Y10S430/143
    • A method is disclosed for using non-overlapping variable shaped beam (VSB) shots in the design and manufacture of a reticle, where the union of the plurality of shots deviates from the desired pattern. Methods are described for fracturing or mask data preparation or proximity effect correction of a desired pattern to be formed on a reticle; for forming a pattern on a reticle using charged particle beam lithography; and for optical proximity correction (OPC) of a desired pattern. Dosages of the shots may be allowed to vary with respect to each other. The plurality of shots may be determined such that a pattern on the surface calculated from the plurality of shots is within a predetermined tolerance of the desired pattern. In some embodiments, an optimization technique may be used to minimize shot count.
    • 一种方法是游离缺失盘用于在光罩,其中拍摄的多个联合与期望图案的叉开的设计和制造使用非重叠的可变形束(VSB)发射。 方法被描述用于向期望形成在标线片的图案的压裂或掩模数据准备或邻近效应校正的; 用于形成上使用带电粒子束光刻的标线片的图案; 和用于所希望的图案的光学邻近校正(OPC)。 的镜头的剂量可以被允许相对于海誓山盟变化。 拍摄主体的多元化可能是确定的开采搜索的确从拍摄的多个计算的表面上的图案是期望图案的预定公差范围内。 在一些实施例中,在优化技术可以被用来最小化发射次数。