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    • 1. 发明公开
    • THIN FILM MASK
    • EP4379463A1
    • 2024-06-05
    • EP22866663.2
    • 2022-09-07
    • Longi Green Energy Technology Co., Ltd.
    • CAI, Yongan
    • G03F1/00G03F1/48G03F7/00C23C14/04
    • C23C14/04C25D5/02G03F1/00G03F1/48G03F7/00H01L21/027H01L31/0224H01L31/18
    • The present application provides a thin film mask including a first layer and a second layer; the first layer and the second layer are arranged in layer configuration; the second layer includes an adhesive film; under irradiation of an ultraviolet light source and with a thickness of the first layer being 200 µm or less, an absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the ultraviolet light source is 355 ± 15 nm; or under irradiation of a green light source and with the thickness of the first layer being 200 µm or less, the absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the green light source is 530 ± 15 nm; or under irradiation of an infrared light source and with the thickness of the first layer being 200 µm or less, the absorption coefficient of the first layer is ≥ 20%, wherein a wavelength of the infrared light source is 1045 ± 20 nm; and a visible light transmittance of the first layer is ≤ 90%. The optical properties are utilized by the thin film mask provided by the present application, less power for the light source is required and the cost can be saved comparing with a common thin film. Further, by the patterning content formed by a light source with low power consumption, and the cost of the adhesive film is low. A complicated process is not needed to be matched with to achieve the patterning process, and cost reduction and efficiency increase are achieved.