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51. 发明公开

EP0601692A1 Electronic device incorporating artificial super lattice 失效
标题翻译： Elektronisches Bauelement mitkünstlichemÜbergitter。
公开(公告)号：EP0601692A1
公开(公告)日：1994-06-15
申请号：EP93307226.6
申请日：1993-09-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kawakubo, Takashi c/o Int.Prop.Div.K.K. Toshiba , Hirayama, Hideo c/o Int.Prop.Div. K.K. Toshiba , Sano, Kenya c/o Int.Prop.Div.K.K. Toshiba , Oose, Michihiro c/oInt.Prop.Div.K.K. Toshiba , Tsutsumi, Junsei c/o Int.Prop.Div.K.K. Toshiba
IPC分类号： H01L29/14 , H01L29/88 , H01L29/76
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/161 , H01L29/221 , H01L29/24 , H01L29/26 , H01L29/66977 , H01L29/7376 , H01L29/7606 , H01L29/882 , H01L45/00
摘要： An electronic device is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect. The artificial super lattice possesses a barrier layer formed of an insulating substance and an electrode layer formed of a substance of good conductivity and disposed in contact with the barrier layers.
摘要翻译：公开了一种电子装置，其具有通过将选自属于3A〜6A族的过渡元素的元素和稀土元素之间的化合物形成的具有良好导电性的物质交替重叠的人造超晶格和选自硼，碳，氮，磷，硒和碲中的元素，或选自7A和8族的元素的氧和过渡金属元素之间的化合物，以及由简单金属选自属于组1A，组2A和组1B至4B的元素和选自碳，氮，氧，磷，硫，硒，碲和卤素元素的元素，其厚度适合于获得量子尺寸影响。人造超晶格具有由绝缘物质形成的阻挡层和由导电性良好的物质形成并与势垒层接触的电极层。

52. 发明公开

EP0535202A1 SEMICONDUCTOR DEVICE, LIGHT-EMITTING DIODE AND TRANSISTOR STRUCTURE MAKING USE OF RESONANT TUNNELING 失效
标题翻译：半导体器件中，发光二极管和晶体管构成的共振隧道效应BENUTZEND。
公开(公告)号：EP0535202A1
公开(公告)日：1993-04-07
申请号：EP92908742.0
申请日：1992-04-16
申请人： Interuniversitair Micro-Elektronica Centrum vzw
发明人： VAN HOOF, Chris , GENOE, Jan , BORGHS, Gustaaf
IPC分类号： H01L29 , G02F1 , H01L33
CPC分类号： H01L29/7376 , B82Y10/00 , B82Y30/00 , H01L29/882 , H01L33/0004 , H01L33/02
摘要： Dispositif à semiconducteur comportant: une première couche de matière semiconductrice présentant un premier type de conductivité; une seconde couche de matière semiconductrice présentant un autre type de conductivité; et une structure permettant le passage par effet tunnel résonnant de la première à la seconde couche de matière semiconductrice. La structure de passage par effet tunnel résonnant (RTS) utilise la passage extrêmement rapide par effet tunnel dans lequel les porteurs de charge franchissent par effet tunnel une barrière d'énergie. Dans ce cas, le facteur déterminant est le temps de passage et non pas la recombinaison radiative. Ainsi, on peut obtenir des oscillations optiques extrêmement rapides dont la fréquence est, par exemple, autour de 750 GHz. On a déjà pu réaliser des oscillations électriques à de telles fréquences.

53. 发明公开

EP0361379A2 Precision voltage reference 有权
标题翻译： Präzisionsspannungsreferenz。
公开(公告)号：EP0361379A2
公开(公告)日：1990-04-04
申请号：EP89117720.6
申请日：1989-09-26
申请人： HONEYWELL INC.
发明人： Berndt, Dale F. , Peczalski, Andrezej
IPC分类号： H01L29/88 , H01L29/20 , G05F3/16
CPC分类号： B82Y10/00 , G05F3/16 , H01L29/882 , Y10S257/906
摘要： A precision voltage reference includes at least one superlattice resonant tunneling diode (10) and support electronics (44). The precision voltage reference is stable as to temperature and radiation.
摘要翻译：精密电压基准包括至少一个超晶格谐振隧道二极管（10）和支撑电子器件（44）。精密电压基准对于温度和辐射是稳定的。

54. 发明公开

EP0322718A2 Resonant tunneling device 失效
标题翻译： Annenung mit resonanceem Tunneleffekt。
公开(公告)号：EP0322718A2
公开(公告)日：1989-07-05
申请号：EP88121317.7
申请日：1988-12-20
申请人： HITACHI, LTD.
发明人： Mizuta, Hiroshi , Tanoue, Tomonori , Kusano, Chushirou Sankopo Higashitokorozawa , Takahashi, Susumu
IPC分类号： H01L29/88 , H01L29/12
CPC分类号： B82Y10/00 , H01L29/155 , H01L29/882
摘要： A resonant tunneling device comprises a superlattice layer (11) which includes an interlaminated structure of three semiconductor layers (5, 6, 7; 26, 24, 22) each having a narrow energy bandgap and serving as a quantum well layer and four semiconductor layers (1, 2, 3, 4; 27, 25, 23, 21) each having a wide energy bandgap and serving as a barrier layer and in which three quantum levels are formed in the quantum well layers. A resonant tunneling phenomenon produced between the quantum levels provide peak current values which are substantially equal to each other, peak voltages which can be set independently from each other, and peak-to-valley (P/V) ratios which are high, thereby realizing the resonant tunneling device which has an excellent performance as a three state logic element for a logic circuit. By increasing the number of quantum well layers and the number of barrier layers, a four or more state logic element for a logic circuit can be realized.
摘要翻译：谐振隧穿装置包括超晶格层（11），其包括三个半导体层（5,6,7; 26,24,22）的层间结构，每个半导体层具有窄能带隙并且用作量子阱层和四个半导体层（1,2,3,4; 27,25,23,21），其各自具有宽能带隙并且用作阻挡层，并且其中在量子阱层中形成三个量子水平。在量子电平之间产生的谐振隧穿现象提供了彼此基本相等的峰值电流值，可以彼此独立设置的峰值电压和高峰值 - 谷值（P / V）比，从而实现该谐振隧穿装置作为用于逻辑电路的三态逻辑元件具有优异的性能。通过增加量子阱层的数量和势垒层的数量，可以实现用于逻辑电路的四个或更多个状态逻辑元件。

55. 发明公开

EP0320110A2 Memory device comprising a resonant-tunneling semiconductor diode and mode of operation 失效
标题翻译： Speicherannnung mit einer Halbleiter diode mit Tunning Tunneleffekt und Wirkungsweise。
公开(公告)号：EP0320110A2
公开(公告)日：1989-06-14
申请号：EP88310336.8
申请日：1988-11-03
申请人： AT&T Corp.
发明人： Capasso, Federico , Cho, Alfred Yi , Sen, Susanta
IPC分类号： G11C11/56 , G11C11/38 , H01L29/88 , H01L29/205
CPC分类号： B82Y10/00 , G11C11/38 , G11C11/56 , G11C2211/5614 , H01L29/7606 , H01L29/882 , H03B19/16 , Y10S257/926
摘要： A memory bistable cell well suited for integration in memory integrated circuits, comprising a voltage source, a load resistor and a resonant-tunneling semiconductor diode (in lieu of two-transistor flip-flop).
A device comprising an InAlAs-InGaAs-InAlAs single quantum well resonant-tunneling structure formed between an InP-InGaAs substrate/buffer structure and an InGaAs cap layer. An undoped InGaAs layer is further formed between the resonant-tunneling structure and the cap layer in order to accelerate the emitted carriers and provide more gradual current peaks.
The device can be operated at temperatures greater than look, and in particular at or near room temperature.
A three terminal resonant-tunneling composite structure is further disclosed.
摘要翻译：一种非常适合集成在存储器集成电路中的存储双稳态单元，包括电压源，负载电阻和谐振隧穿半导体二极管（代替双晶体管触发器）。包括在InP-InGaAs衬底/缓冲结构和InGaAs覆盖层之间形成的InAlAs-InGaAs-InAlAs单量子阱共振隧穿结构的器件。在谐振隧穿结构和盖层之间进一步形成未掺杂的InGaAs层，以加速发射的载流子并提供更多的逐渐电流峰值。该装置可以在大于外观的温度下操作，特别是在室温或室温附近操作。进一步公开了三端谐振隧穿复合结构。

56. 发明公开

EP0316139A2 Resonant tunelling barrier structure device 失效
标题翻译： Anordnung，die eine Sperrschichtstruktur mit resonanceem Tunneleffekt aufweist。
公开(公告)号：EP0316139A2
公开(公告)日：1989-05-17
申请号：EP88310498.6
申请日：1988-11-08
申请人： FUJITSU LIMITED
发明人： Muto, Shunichi , Inata, Tsugo , Takeuchi, Atsushi , Sugiyama, Yoshihiro
IPC分类号： H01L29/205 , H01L29/201 , H01L29/88
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/882
摘要： A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, comprises an InP substrate (1) and a RTB structure. THe RTB structure consists of a first doped layer (5) of InP or In 0.53 Ga 0 .47 As, a first barrier layer (2) of Al x Ga 1-x As y Sb 1-y (0 ≦ x ≦ 1, y = 0.51 + 0.05x), a well layer (4) of InP or In z Ga 1-z As (0.52 ≦ z ≦ 0.54), a second barrier layer (3) of the AlGaAsSb, and as econd doped layer (6) of InP or In z Ga 1-z As. All of the layers are lattice-matched to InP.
摘要翻译：具有大的峰 - 谷电流密度（Jp / Jv）比的谐振隧道势垒（RTB）结构器件（例如二极管）包括InP衬底（1）和RTB结构。 RTB结构由InP或In0.53Ga0.47As的第一掺杂层（5），Al x Ga 1-x As y Sb 1-y（0≤x≤1，y = 0.51 + 0.05）的第一势垒层（2） x），InP或InzGa1-zAs（0.52≤z≤0.54）的阱层（4），AlGaAsSb的第二势垒层（3），以及作为InP或InzGa1的去掺杂层（6） -zAs。所有层与InP格子匹配。

57. 发明公开

EP0274511A1 SINGLE QUANTUM WELL RESONANT TUNNELING SEMICONDUCTOR DEVICES 失效
标题翻译：半导体器件共振隧穿在一个简单的量子位能POT。
公开(公告)号：EP0274511A1
公开(公告)日：1988-07-20
申请号：EP87904746.0
申请日：1987-05-26
申请人： Hughes Aircraft Company
发明人： SCHULMAN, Joel, N.
IPC分类号： H01L29
CPC分类号： B82Y10/00 , H01L29/205 , H01L29/7606 , H01L29/882
摘要： Dispositif à semi-conducteur (10) à puits quantique unique, dans lequel une couche centrale (12) est disposée entre deux couches barrières (14) pour former une barrière quantique (15), les couches barrières (14) ayant une composition telle qu'un niveau d'énergie de résonance (18) soit engendré dans la couche (12) à puits quantique, et dont l'épaisseur est suffisamment faible pour que les électrons puissent migrer à travers la barrière quantique (15) lors de l'application d'une tension. La couche (12) à puits quantique et les couches barrières (14) sont disposées entre deux couches (16a, 16b) à injection d'électrons dont les compositions sont choisies de manière que l'énergie minimale de la bande de conduction (20) pour les électrons se trouvant dans les couches à injection soit environ égale mais inférieure au niveau de l'énergie de résonance (18) du puits quantique (12). Les électrons traversent la barrière quantique (15) sous l'effet tunnel lorsqu'une faible tension est appliquée aux deux bornes principales du dispositif, pourvu que cette tension soit suffisante pour que les électrons dont l'énergie est voisine de l'énergie minimale (20) de la bande de conduction de la couche à injection (16a) passe au niveau d'énergie de résonance (18) du puits quantique. La tension interne (Va) nécessaire pour réaliser l'effet tunnel est réduite par rapport à celle requise pour les diodes à effet tunnel à double barrière classiques. On obtient ainsi un courant plus élevé sous l'effet tunnel et un rapport amélioré de courant maximum/minimum sur la plage des résistances négatives, et la tension du point de fonctionnement à courant continu est réduite. Le dispositif à semi-conducteur (10) peut être muni de deux ou de trois bornes, une borne étant prévue pour l'application d'une tension à la barrière quantique (15).

58. 发明公开

EP3103139A2 ENERGY-FILTERED COLD ELECTRON DEVICES AND METHODS 有权
标题翻译：能量过滤的冷电子装置和方法
公开(公告)号：EP3103139A2
公开(公告)日：2016-12-14
申请号：EP15746295.3
申请日：2015-02-03
申请人： Board of Regents, The University of Texas System
发明人： KOH, Seong, Jin , BHADRACHALAM, Pradeep , MA, Liang-Chieh
IPC分类号： H01L29/772 , H01L29/94
CPC分类号： H01L29/66977 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/0895 , H01L29/122 , H01L29/127 , H01L29/24 , H01L29/413 , H01L29/66439 , H01L29/66666 , H01L29/7613 , H01L29/7827 , H01L29/882 , Y10S977/774 , Y10S977/937
摘要： Energy-filtered cold electron devices use electron energy filtering through discrete energy levels of quantum wells or quantum dots that are formed through band bending of tunneling barrier conduction band. These devices can obtain low effective electron temperatures of less than or equal to 45K at room temperature, steep electrical current turn-on/turn-off capabilities with a steepness of less than or equal to 10 mV/decade at room temperature, subthreshold swings of less than or equal to 10 mV/decade at room temperature, and/or supply voltages of less than or equal to 0.1 V.
摘要翻译：能量过滤冷电子器件使用电子能量过滤，通过量子阱或量子点的离散能级通过隧道势垒导带的带弯曲形成。这些器件可以在室温下获得低于或等于45K的低有效电子温度，在室温下具有小于或等于10mV /十倍频程的陡度的陡峭的电流开/关能力，亚阈值波动在室温下小于或等于10mV /十倍频，和/或小于或等于0.1V的电源电压。

59. 发明授权

EP1525339B1 NANOSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：性纳米结构及其制备方法
公开(公告)号：EP1525339B1
公开(公告)日：2016-03-16
申请号：EP03738327.0
申请日：2003-07-08
申请人： QuNano AB
发明人： SAMUELSON, Lars, Ivar , OHLSSON, Jonas, Björn
IPC分类号： C30B11/12 , C30B29/40 , C30B29/60
CPC分类号： H01L31/035227 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B25/00 , C30B25/02 , C30B25/14 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/20 , H01L29/66318 , H01L29/7371 , H01L29/882 , H01L31/022466 , H01L31/048 , H01L31/068 , H01L33/04 , Y02E10/547 , Y10S977/762 , Y10S977/763
摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.

60. 发明公开

EP2343742A2 Semiconductor diodes fabricated by aspect ratio trapping with coalesced films 有权
标题翻译： DurchSeitenverhältnisermittlunghergestellte Halbleiterdioden mit verschmolzenen Schichten
公开(公告)号：EP2343742A2
公开(公告)日：2011-07-13
申请号：EP10006883.2
申请日：2010-07-02
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Lochtefeld, Anthony
IPC分类号： H01L33/00 , H01L33/12 , H01L33/52
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L21/02647 , H01L21/187 , H01L29/04 , H01L29/151 , H01L29/861 , H01L29/882 , H01L31/1852 , H01L33/007 , H01L33/12 , H01L33/52 , H01L2933/005 , Y02E10/543 , Y02E10/544 , Y02P70/521
摘要： A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The device further includes a top diode material and an active diode region between the top and bottom diode materials.
摘要翻译：光子器件包括衬底和介电材料，其包括暴露衬底的一部分的两个或更多个开口，所述两个或多个开口各自具有至少为1的长宽比。一种底二极管材料，包括晶格的化合物半导体材料与衬底不匹配占据两个或更多个开口并且在两个或更多个开口上方聚结形成底部二极管区域。该器件还包括顶部二极管材料和位于顶部和底部二极管材料之间的有源二极管区域。

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