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41. 发明公开

EP2672488A1 MRAM element having improved data retention and low writing temperature 有权转让
标题翻译： MRAM-Element mit verbesserter Datenspeicherung und geringer Schreibtemperatur
公开(公告)号：EP2672488A1
公开(公告)日：2013-12-11
申请号：EP12290196.0
申请日：2012-06-08
申请人： Crocus Technology S.A.
发明人： Prejbeanu, Ioan Lucian , Dieny, Bernard , Ducruet, Clarisse , Lombard, Lucien
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
摘要： The present disclosure concerns a MRAM element (1) comprising a magnetic tunnel junction (2) including a reference layer (21) having a reference magnetization (210); a storage layer (23) having a storage magnetization (230, 234, 235); a tunnel barrier layer (22) included between the storage layer (23) and the reference layer (21); and a storage antiferromagnetic layer (24) exchange-coupling the storage layer (23) such as to pin the storage magnetization (230, 234, 235) at a low temperature threshold and to free it at a high temperature threshold; the anti-ferromagnetic layer (24) comprising: at least one first layer (241) having a first storage blocking temperature (T bs1 ), and at least one second antiferromagnetic layer (242) having a second storage blocking temperature (T bs2 ); the first storage blocking temperature (T bs1 ) being lower than the second storage blocking temperature (T bs2 ). The MRAM element disclosed herein combines better data retention compared with known MRAM elements with low writing mode operating temperature.
摘要翻译：本公开涉及一种MRAM元件（1），其包括具有参考磁化（210）的参考层（21）的磁性隧道结（2）。存储层（23），具有存储磁化（230,234,235）; 包括在所述存储层（23）和所述参考层（21）之间的隧道势垒层（22）; 以及存储反铁磁层（24），其交换耦合所述存储层（23），以便在低温阈值下固定所述存储磁化（230,234,235），并将其在高温阈值下释放; 所述反铁磁层（24）包括：具有第一储存阻挡温度（T bs1）的至少一个第一层（241）和具有第二储存阻挡温度（T bs2）的至少一个第二反铁磁层（242）; 第一储存阻断温度（T bs1）低于第二储存阻断温度（T bs2）。与具有低写入模式工作温度的已知MRAM元件相比，本文公开的MRAM元件结合了更好的数据保持。

42. 发明授权

EP2232497B1 METHOD FOR MODELING A MAGNETIC TUNNEL JUNCTION WITH SPIN-POLARIZED CURRENT WRITING 有权
标题翻译：形成具有与功率的写入磁性隧道TRANSITION方法自旋极化
公开(公告)号：EP2232497B1
公开(公告)日：2013-08-28
申请号：EP08864252.5
申请日：2008-12-16
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Centre National de la Recherche Scientifique (C.N.R.S.)
发明人： PRENAT, Guillaume , GUO, Wei
IPC分类号： G11C11/16 , G06F17/50
CPC分类号： G11C11/16 , G06F17/5036

43. 发明公开

EP2593938A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING LAMINATED FREE LAYERS AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权转让
标题翻译：方法和一种用于提供磁性隧道连接器，带层压自由层与显存采用这种磁性元素
公开(公告)号：EP2593938A1
公开(公告)日：2013-05-22
申请号：EP11807322.0
申请日：2011-07-08
申请人： Grandis, Inc.
发明人： LOTTIS, Daniel , CHEN, Eugene Youjun , TANG, Xueti , WATTS, Steven M.
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286
摘要： A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer- producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.

44. 发明公开

EP2404296A4 A MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：越州磁自旋转移直接访问存储器
公开(公告)号：EP2404296A4
公开(公告)日：2013-05-22
申请号：EP09841258
申请日：2009-08-26
申请人： AVALANCHE TECHNOLOGY INC
发明人： RANJAN RAJIV YADAV , KESHTBOD PARVIZ
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L27/22 , H01L43/08
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , G11C2211/5615 , H01L27/228 , H01L43/08 , Y10S977/933 , Y10S977/935

45. 发明公开

EP2556507A1 ASYMMETRIC WRITE SCHEME FOR MAGNETIC BIT CELL ELEMENTS 审中-公开
标题翻译：不相容的SCHREIBSCHEMAFÜRMAGNETISCHE BITZELLENELEMENTE
公开(公告)号：EP2556507A1
公开(公告)日：2013-02-13
申请号：EP11713458.5
申请日：2011-04-05
申请人： Qualcomm Incorporated
发明人： ZHU, Xiaochun , RAO, Hari M. , KIM, Jung Pill , KANG, Seung H.
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1659 , G11C11/1693
摘要： Asymmetric switching is defined for magnetic bit cell elements. A magnetic bit cell for memory and other devices includes a transistor coupled to an MTJ structure. A bit line is coupled at one terminal of the bit cell to the MTJ structure. At another terminal of the bit cell, a source line is coupled to the source/drain terminal of the transistor. The bit line is driven by a bit line driver that provides a first voltage. The source line is driven by a source line driver that provides a second voltage. The second voltage is larger than the first voltage. The switching characteristics of the bit cell and MTJ structure are improved and made more reliable by one or a combination of applying the higher second voltage to the source line and/or reducing the overall parasitic resistance in the magnetic bit cell element.
摘要翻译：不对称切换是针对磁头单元元件定义的。用于存储器和其他器件的磁位单元包括耦合到MTJ结构的晶体管。位线在位单元的一个端子耦合到MTJ结构。在位单元的另一个端子处，源极线耦合到晶体管的源极/漏极端子。位线由提供第一电压的位线驱动器驱动。源极线由提供第二电压的源极线驱动器驱动。第二电压大于第一电压。通过将较高的第二电压施加到源极线和/或降低磁头单元元件中的整体寄生电阻的一个或组合来提高位单元和MTJ结构的开关特性并使其变得更可靠。

46. 发明授权

EP2269192B1 ARRAY STRUCTURAL DESIGN OF MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) BIT CELLS 有权
标题翻译：位单元阵列结构设计磁阻随机存取存储器（MRAM）
公开(公告)号：EP2269192B1
公开(公告)日：2013-02-13
申请号：EP09727965.7
申请日：2009-03-23
申请人： QUALCOMM Incorporated
发明人： XIA, William, H.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C5/063 , G11C11/1653 , G11C11/1655 , G11C11/1659 , H01L29/82 , Y10S977/933

47. 发明公开

EP2533244A1 Dispositif magnétique à couplage d'echange 有权
标题翻译： Magnetvorrichtung mit Wechselschaltung
公开(公告)号：EP2533244A1
公开(公告)日：2012-12-12
申请号：EP12170677.4
申请日：2012-06-04
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Moritz, Jérôme , Dieny, Bernard
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： L'invention concerne un dispositif magnétique (24, 240) comportant une couche magnétique (5), dite couche libre, présentant une direction d'aimantation variable et une première couche antiferromagnétique (6) au contact de ladite couche libre (5), ladite première couche antiferromagnétique (6) étant apte à piéger la direction d'aimantation de ladite couche libre (5). Le dispositif magnétique (24, 240) comporte en outre une couche réalisée dans un matériau ferromagnétique (7), dite couche de stabilisation, au contact de la première couche antiferromagnétique (6) par sa face opposée à la couche libre (5), les directions d'aimantation desdites couches libre (5) et de stabilisation (7) étant sensiblement perpendiculaires. Une première couche (5) parmi lesdites couches libre (5) et de stabilisation (7) présente une aimantation dont la direction est orientée dans le plan de ladite première couche (5) tandis que la deuxième (7) des deux couches parmi lesdites couches libre (5) et de stabilisation (7) présente une aimantation dont la direction est orientée hors du plan de ladite deuxième couche (7).
摘要翻译：装置（24）具有接触自由磁性层（5）的反铁磁层（6）。稳定层（7）由铁磁材料制成，并且通过其与磁性层相对的表面接触反铁磁层，磁性层和稳定层的磁化方向彼此垂直。磁性层的磁化方向定向在磁性层的平面内。稳定层的磁化方向定向在稳定层平面的外侧。

48. 发明授权

EP1973178B1 Magnetoresistance effect device and method of production of the same 有权
标题翻译： Vorrichtung mit magnetoresistiver Wirkung und Herstellungsverfahrendafür
公开(公告)号：EP1973178B1
公开(公告)日：2012-10-24
申请号：EP08159511.8
申请日：2005-09-05
申请人： Canon Anelva Corporation , National Institute of Advanced Industrial Science and Technology
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naokion , Yuasa, Shinji
IPC分类号： H01L43/08 , H01L43/12 , H01F41/30 , H01F41/32 , G11C11/16 , C23C14/08 , B82Y25/00 , C23C14/34 , H01F10/32 , H01F41/18
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
摘要翻译：一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分成为无定形的部分，阻挡层是具有单个晶体结构。

49. 发明公开

EP2453482A1 MAGNETIZATION-REVERSING APPARATUS, MEMORY ELEMENT, AND MAGNETIC FIELD-GENERATING APPARATUS 审中-公开
标题翻译： MAGNETISIERUNGSUMKEHRUNGSVORRICHTUNG，SPEICHERELEMENT UND MAGNETFELDERZEUGUNGSVORRICHTUNG
公开(公告)号：EP2453482A1
公开(公告)日：2012-05-16
申请号：EP10797202.8
申请日：2010-07-09
申请人： Kyushu University, National University Corporation
发明人： KIMURA Takashi , HAMAYA Kohei
IPC分类号： H01L29/82 , G11B5/31 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1675 , H01L27/22
摘要： A magnetization reversal device includes a ferromagnetic 12 body which is provided in an interconnection of a non-ferromagnetic dot 11 so that a part or a whole of the ferromagnetic dot is three-dimensionally buried in the interconnection of said non-ferromagnetic dot, and a spin injection source 13 which generates a spin-polarized pure spin current without a flow of charges, and which is provided in the interconnection of the non-ferromagnetic dot 11 to be in contact therewith so that the interconnection of the non-ferromagnetic dot serves as a common electrode, and the pure spin current flows into the ferromagnetic dot 2 through the interconnection of the non-magnetic body by the spin injection source 13 due to a diffusion current, to thereby reverse magnetization of the ferromagnetic dot 12. By injecting the pure spin current, using this planar structure, it is possible to easily carry out the magnetization reversal of the ferromagnetic dot 12 even if it is a thick film ferromagnetic dot without being subjected to limitation of a spin diffusion length.
摘要翻译：磁化反转装置包括铁磁体12，其设置在非铁磁点11的互连中，使得铁磁点的一部分或全部三维地埋在所述非铁磁点的互连中，并且自旋注入源13，其产生自旋极化的纯自旋电流而不流动电荷，并且设置在非铁磁点11的互连中以与其接触，使得非铁磁性点的互连用作公共电极，并且纯自旋电流由于扩散电流而通过自旋注入源13通过非磁性体的互连而流入铁磁点2，从而反转铁磁点12的磁化。通过注入纯的旋转电流使用这种平面结构，即使是厚膜铁磁体也可以容易地进行铁磁性点12的磁化反转 c点而不受自旋扩散长度的限制。

50. 发明公开

EP1903623A3 Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same 审中-公开
标题翻译：具有用于其制备的CoFeB层和过程的复合结构的固定磁性层的隧道磁传感器
公开(公告)号：EP1903623A3
公开(公告)日：2011-12-21
申请号：EP07018079.9
申请日：2007-09-14
申请人： ALPS ELECTRIC CO., LTD.
发明人： Ikarashi, Kazuaki , Umetsu, Eiji , Tanaka, Kenichi , Asatsuma, Kota
IPC分类号： H01L43/08 , H01L43/12 , G01R33/09
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/10 , H01L43/12
摘要： A fixed magnetic layer (4) has a laminated structure composed of a first fixed magnetic layer (4a), an interface layer (4b) of CoFe or Co, and a second fixed magnetic layer (4c) formed of CoFeB provided in that order from the bottom. An insulating barrier layer (5) composed of Al-O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al-O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.

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