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1. 发明授权

EP2677331B1 MTJ sensoring including domain stable free layer 有权
标题翻译： MTJ感测的同域稳定的自由层
公开(公告)号：EP2677331B1
公开(公告)日：2015-04-29
申请号：EP13004439.9
申请日：2008-03-27
申请人： MagIC Technologies Inc.
发明人： Yimin, Guo , Po-Kang, Wang
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302

2. 发明公开

EP1903624A3 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor 有权
标题翻译：通过至少所述钉扎层的一部分隧道磁阻传感器由的CoFeB层的，以及其制造方法隧道磁阻传感器
公开(公告)号：EP1903624A3
公开(公告)日：2011-08-31
申请号：EP07018080.7
申请日：2007-09-14
申请人： ALPS ELECTRIC CO., LTD.
发明人： Ikarashi, Kazuaki , Umetsu, Eiji , Tanaka, Kenichi , Nishimura, Kazumasa , Saito, Masamichi , Ide, Yosuke , Nakabayashi, Ryo , Nishiyama, Yoshihiro , Kobayashi, Hidekazu , Hasegawa, Naoya
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer (4), an insulating barrier layer (5) formed of Mg-O, and a free magnetic layer (6). A barrier-layer-side magnetic sublayer (4c) constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region (4c1) formed of CoFeB or FeB and a second magnetic region (4c2) formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

3. 发明公开

EP1543566A4 THERMALLY STABLE MAGNETIC ELEMENT UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT 审中-公开
标题翻译：自旋转移与要素使用SANTANDER MRAM块热稳定的磁元
公开(公告)号：EP1543566A4
公开(公告)日：2009-06-03
申请号：EP03752594
申请日：2003-09-23
申请人： GRANDIS INC
发明人： HUAI YIMING , NGUYEN PAUL P
IPC分类号： H01F10/32 , G11B5/127 , G11B5/33 , G11C11/16 , H01L27/22 , H01L29/82 , H01L31/119 , H01L43/00 , H01L43/08
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L43/08
摘要： A method and system for providing a magnetic element (120) capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element (120) disclosed. The magnetic element (120) includes a first (128), second (132) and third (136) pinned layers, first (130) and second (134) nonmagnetic layers, a free layer (140) and a nonmagnetic spacer layer (138). The first (128), second (132) and third (136) pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first (130) and second (134) nonmagnetic layers include first and second diffusions barriers, respectively. The first (130) and second (134) nonmagnetic layers are between the first (128) and second (132) pinned layers and the second (132) and third (136) pinned layers, respectively. The first (128) and second (132) pinned layers and the second (132) and third (136) pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer (138) is conductive and resides between the free layer (140) and the third pinned layer (136). In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.

4. 发明授权

EP1187148B1 THIN PERMANENT-MAGNET FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：薄永久磁铁及其制造方法
公开(公告)号：EP1187148B1
公开(公告)日：2008-10-22
申请号：EP01906188.6
申请日：2001-02-21
申请人： Hitachi Metals, Ltd.
发明人： UEHARA, Minoru
IPC分类号： H01F10/12 , H01F10/32 , H01F41/30 , H01F1/057 , G11B5/64 , G11B5/66 , G11B5/84
CPC分类号： G11B5/66 , B82Y25/00 , B82Y40/00 , G11B5/653 , G11B5/72 , G11B5/7325 , G11B5/8404 , H01F1/057 , H01F10/126 , H01F10/3286 , H01F41/302 , Y10S428/90 , Y10T428/1107
摘要： High-melting metal layers (2), (4), (6), (8), and (10) are stacked alternately with magnetic rare-earth alloy layers (3), (5), (7), (9), (11), and (12) to form on a substrate a layered structure composed of four or more unit layers. The high-melting metal layers (2), (4), (6), (8), and (10) are made of at least one material selected from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, and tungsten and each has a thickness of 5 to 50 nm. The magnetic rare-earth alloy layers (3), (5), (7), (9), (11), and (12) comprise tetragonal crystals of R2Fe14B (wherein R is neodymium and/or praseodymium) as the main constituent phase and each has a thickness of 50 to 500 nm.
摘要翻译：（3），（5），（7），（9）和（5）交替层叠高熔点金属层（2），（4），（6），（8），（11）和（12）以在衬底上形成由四个或更多个单位层组成的层状结构。高熔点金属层（2），（4），（6），（8）和（10）由选自钛，钒，铬，锆，铌，钼，铪，钽和钨，并且各自具有5至50nm的厚度。（3），（5），（7），（9），（11）和（12）的磁性稀土合金层包含R2Fe14B（其中R是钕和/或镨）作为主要成分的四方晶体相，并且每个具有50至500nm的厚度。

5. 发明授权

EP1329912B1 THIN FILM RARE EARTH PERMANENT MAGNET, AND METHOD FOR MANUFACTURING THE PERMANENT MAGNET 有权
标题翻译：薄膜稀土永磁及其制备方法
公开(公告)号：EP1329912B1
公开(公告)日：2008-06-25
申请号：EP01984520.5
申请日：2001-07-30
申请人： Neomax Co., Ltd.
发明人： YAMASHITA, Osamu , MAKITA, Ken
IPC分类号： H01F10/12 , H01F1/04 , C23C14/14 , H01F10/32 , H01F41/30
CPC分类号： H01F10/3222 , B82Y25/00 , B82Y40/00 , C23C14/00 , C23C14/16 , H01F10/007 , H01F10/126 , H01F10/28 , H01F10/3227 , H01F41/302 , Y10T428/1129 , Y10T428/115 , Y10T428/12861 , Y10T428/12868 , Y10T428/12875 , Y10T428/12931 , Y10T428/12937 , Y10T428/24975 , Y10T428/32 , Y10T428/325
摘要： A thin film rare earth permanent magnet capable of making the thin film by vapor growth anisotropic ina lamination direction, and a method for manufacturing the permanent magnet. There are repeated a number of operations to form atomic laminate units (13) by laminating a monoatomic layer (10) of a rare earth element on a substrate (1) of a non-magnetic material having a flat smoothness and then by laminating an atomic laminate (12) of a transient metal element having a plurality of monoatomic layers (11) of a transient metal element, so that the atomic laminate units (13) of a characteristic construction are laminated in a plurality of layers. As a result, each atomic laminate (12) has an easily magnetizable axis in the laminate direction of the monoatomic layers (11), and is sandwiched between the monoatomic layers (10, 10) of the rare earth element so that an inverse magnetic domain is suppressed to establish a strong coercive force. Moreover, the content of the transient metal element to the rare earth metal is raised to improve the residual magnetic flux density drastically.

6. 发明公开

EP1885006A1 A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same 有权转让
标题翻译：用于磁隧道结器件的新罩面层为的dR / R及其制造方法的加强
公开(公告)号：EP1885006A1
公开(公告)日：2008-02-06
申请号：EP07392004.3
申请日：2007-07-30
申请人： MagIC Technologies Inc.
发明人： Horng, Cheng T. , Tong, Ru-Ying
IPC分类号： H01L43/08 , H01L43/12 , H01F10/32 , G11B5/39 , G11C11/15
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400W and 200W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is substantially reduced by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.
摘要翻译：在到MRAM阵列或TMR的MTJ读出磁头被盘游离缺失其中低磁化覆盖层是具有在所形成的一个NiFe或的CoFeB /的NiFe自由层，Ta中间层上的NiFeHf内层，和由Ru外层的复合 Ta层。对于实施例，低磁化NiFeHf层通过共溅射的NiFe和Hf靶与400W和200W的行波功率分别实现。较高的HF含量增加NiFeHf层的氧吸杂能力和厚度被修改以改变的dR / R，RA，和磁致伸缩值。自由层和覆盖层之间的所谓的死层基本上由在自由层上引入一个NiFeHf层以改善晶格匹配降低。在用于制备NiFeHf层的镍铁靶中的Fe含量优选为相同于由NiFe自由层。

7. 发明公开

EP1829087A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：方法和系统提供了高质感的磁阻元件及磁性记忆
公开(公告)号：EP1829087A2
公开(公告)日：2007-09-05
申请号：EP05853169.0
申请日：2005-12-06
申请人： Grandis, Inc.
发明人： PAKALA, Mahendra , VALET, Thierry , HUAI, Yiming , DIAO, Zhitao
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

8. 发明公开

EP1793400A2 Method of forming MRAM devices 有权
标题翻译：元素von einer MRAM矩阵
公开(公告)号：EP1793400A2
公开(公告)日：2007-06-06
申请号：EP07005378.0
申请日：2003-04-21
申请人： MICRON TECHNOLOGY, INC.
发明人： Hineman, Max , Signorini, Karen , Howard, Brad J.
IPC分类号： H01F41/30
CPC分类号： H01L27/222 , B82Y25/00 , B82Y40/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F41/302 , H01F41/308 , H01F41/34
摘要： A method of forming a magnetic random access memory (MRAM) using a sacrificial cap layer (20) on top of the memory cells (10) and the structure resulting therefrom are described. A plurality of individual magnetic memory devices (10) with cap layers (20) are fabricated on a substrate. A continuous first insulator layer (20, 22) is deposited over the substrate and the magnetic memory devices. Portions of the first insulator layer are removed at least over the magnetic memory devices (10) and then the cap layers (20) are selectively removed from the magnetic memory devices (10), thus exposing active top surfaces of the magnetic memory devices (10). The top surfaces of the magnetic memory devices (10) are recessed below the top surface of the first insulator layer (22). Top conductors are formed in contact with the active top surfaces of the magnetic memory devices (10). In an illustrated embodiment, spacers (36) are also formed along the sides of the magnetic memory devices (10) before the first insulator layer (20, 22) is deposited.
摘要翻译：描述了使用在存储单元（10）的顶部上的牺牲帽层（20）形成磁性随机存取存储器（MRAM）的方法以及由此产生的结构。在衬底上制造具有盖层（20）的多个单个磁存储器件（10）。连续的第一绝缘体层（20,22）沉积在衬底和磁存储器件上。至少在磁存储器件（10）上除去第一绝缘体层的部分，然后从磁存储器件（10）中选择性地移除盖层（20），从而暴露磁存储器件（10）的有效顶表面）。磁存储器件（10）的顶表面在第一绝缘体层（22）的顶表面下方凹入。顶部导体形成为与磁存储器件（10）的有效顶表面接触。在图示的实施例中，在沉积第一绝缘体层（20,22）之前，还沿着磁存储器件（10）的侧面形成间隔物（36）。

9. 发明授权

EP1500116B1 METHOD OF FORMING MRAM DEVICES 有权
标题翻译：法形成过程的MRAM积木
公开(公告)号：EP1500116B1
公开(公告)日：2007-05-30
申请号：EP03733885.2
申请日：2003-04-21
申请人： MICRON TECHNOLOGY, INC.
发明人： HINEMAN, Max , SIGNORINI, Karen , HOWARD, Brad, J.
IPC分类号： H01F41/30 , G11C11/16
CPC分类号： H01L27/222 , B82Y25/00 , B82Y40/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F41/302 , H01F41/308 , H01F41/34
摘要： A method of forming a magnetic random access memory (MRAM) using a sacrificial cap layer (20) on top of the memory cells (10) and the structure resulting therefrom are described. A plurality of individual magnetic memory devices (10) with cap layers (20) are fabricated on a substrate. A continuous first insulator layer (20,22) is deposited over the substrate and the magnetic memory devices. Portions of the first insulator layer are removed at least over the magnetic memory devices (10) and then the cap layers (20) are selectively removed from the magnetic memory devices (10), thus exposing active top surfaces of the magnetic memory devices (10). The top surfaces of the magnetic memory devices (10) are recessed below the top surface of the first insulator layer (22). Top conductors are formed in contact with the active top surfaces of the magnetic memory devices (10). In an illustrated embodiment, spacers (36) are also formed along the sides of the magnetic memory devices (10) before the first insulator layer (20,22) is deposited.

10. 发明授权

EP1547102B1 NANOCRYSTALLINE LAYERS AND IMPROVED MRAM TUNNEL JUNCTIONS 有权
标题翻译：纳米晶体层和改进MRAM隧道阻挡层
公开(公告)号：EP1547102B1
公开(公告)日：2007-05-02
申请号：EP03816719.3
申请日：2003-07-24
申请人： Freescale Semiconductor, Inc.
发明人： SLAUGHTER, Jon, M. , DAVE, Renu, W. , SUN, Jijun,
IPC分类号： H01F10/32
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F41/302 , Y10T29/49044
摘要： An improved and novel device and fabrication method for a magnetic element (100), and more particularly a magnetic element with a crystallographically disordered seed layer (120) and/or template layer (122) seeding the nanocrystalline growth of subsequent layers, including a pinning layer (124), a pinned layer (125), and fixed layer (126).

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