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1. 发明公开

EP1903623A2 Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same 审中-公开
标题翻译：具有用于其制备的CoFeB层和过程的复合结构的固定磁性层的隧道磁传感器
公开(公告)号：EP1903623A2
公开(公告)日：2008-03-26
申请号：EP07018079.9
申请日：2007-09-14
申请人： ALPS ELECTRIC CO., LTD.
发明人： Ikarashi, Kazuaki , Umetsu, Eiji , Tanaka, Kenichi , Asatsuma, Kota
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/10 , H01L43/12
摘要： A fixed magnetic layer (4) has a laminated structure composed of a first fixed magnetic layer (4a), an interface layer (4b) of CoFe or Co, and a second fixed magnetic layer (4c) formed of CoFeB provided in that order from the bottom. An insulating barrier layer (5) composed of Al-O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al-O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.
摘要翻译：固定磁性层（4）具有一个第一固定磁性层（4a）的组成的层状结构的接口层（4b）中的CoFe或Co，和第二固定磁性层的（4C）而形成从上按顺序提供的CoFeB的底部。（5）由Al-O的绝缘阻挡层形成在第二固定磁性层上。当的CoFeB /由CoFe / Al的-O构成的层叠结构如上述那样形成，低RA和电阻变化率很高（“R / R），可以同时获得。另外，在RA的变化和电阻（“R / R）的变化率可相对于在过去那样被抑制。

2. 发明授权

EP2645118B1 Magnetic detecting element and magnetic sensor utilizing same 有权转让
标题翻译：一种磁检测方法和磁传感器，使得
公开(公告)号：EP2645118B1
公开(公告)日：2014-12-10
申请号：EP12190552.5
申请日：2012-10-30
申请人： Alps Electric Co., Ltd.
发明人： Koike, Fumihito , Asatsuma, Kota
IPC分类号： G01R33/09
CPC分类号： G01R33/093

3. 发明公开

EP2645118A1 Magnetic detecting element and magnetic sensor utilizing same 有权转让
标题翻译：传感器损坏
公开(公告)号：EP2645118A1
公开(公告)日：2013-10-02
申请号：EP12190552.5
申请日：2012-10-30
申请人： Alps Electric Co., Ltd.
发明人： Koike, Fumihito , Asatsuma, Kota
IPC分类号： G01R33/09
CPC分类号： G01R33/093
摘要： A magnetic detecting element (1) includes a laminated structure where a fixed magnetic layer (3) and a free magnetic layer (5) are laminated through a non-magnetic material layer (4), wherein the fixed magnetic layer (3) is a self-pinned type where a first magnetic layer (3a) and a second magnetic layer (3c) are laminated through a non-magnetic intermediate layer (3b) and the first magnetic layer (3a) and the second magnetic layer (3c) are antiparallelly magnetization-fixed, and the second magnetic layer (3c) is in contact with the non-magnetic material layer (4). The first magnetic layer (3a) is formed using FeCo serving as a material having a higher coercive force than the second magnetic layer (3c). The film thickness (t1) of the first magnetic layer (3a) falls within a range greater than or equal to 10 A and less than or equal to 17 Å, and is thinner than the film thickness (t2) of the second magnetic layer (3c). The non-magnetic intermediate layer (3b) is formed using Rh.
摘要翻译：磁检测元件（1）包括通过非磁性材料层（4）层压固定磁性层（3）和自由磁性层（5）的层叠结构，其中固定磁性层（3）为其中第一磁性层（3a）和第二磁性层（3c）通过非磁性中间层（3b）层叠并且第一磁性层（3a）和第二磁性层（3c）是反平行的磁化固定，第二磁性层（3c）与非磁性材料层（4）接触。使用具有比第二磁性层（3c）更高的矫顽力的材料的FeCo形成第一磁性层（3a）。第一磁性层（3a）的膜厚（t1）落在大于或等于10A且小于或等于17A的范围内，并且比第二磁性层的膜厚度（t2）薄 3C）。使用Rh形成非磁性中间层（3b）。

4. 发明公开

EP1903623A3 Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same 审中-公开
标题翻译：具有用于其制备的CoFeB层和过程的复合结构的固定磁性层的隧道磁传感器
公开(公告)号：EP1903623A3
公开(公告)日：2011-12-21
申请号：EP07018079.9
申请日：2007-09-14
申请人： ALPS ELECTRIC CO., LTD.
发明人： Ikarashi, Kazuaki , Umetsu, Eiji , Tanaka, Kenichi , Asatsuma, Kota
IPC分类号： H01L43/08 , H01L43/12 , G01R33/09
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/10 , H01L43/12
摘要： A fixed magnetic layer (4) has a laminated structure composed of a first fixed magnetic layer (4a), an interface layer (4b) of CoFe or Co, and a second fixed magnetic layer (4c) formed of CoFeB provided in that order from the bottom. An insulating barrier layer (5) composed of Al-O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al-O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.

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