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1. 发明公开

EP4308947A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC SENSOR DEVICE HAVING A HIGH SENSITIVITY AND LOW ZERO-FIELD OFFSET-SHIFT 审中-实审转让
公开(公告)号：EP4308947A1
公开(公告)日：2024-01-24
申请号：EP22710181.3
申请日：2022-03-15
申请人： Crocus Technology S.A.
发明人： CHILDRESS, Jeffrey , TIMOPHEEV, Andrey
IPC分类号： G01R33/09 , G01R33/00

2. 发明公开

EP4272009A1 LINEARIZATION OF MAGNETIC SENSOR OUTPUT BASED ON CONTINUOUS CORRECTION OF HIGH ORDER VOLTAGE OUTPUT COMPONENTS 审中-实审转让
公开(公告)号：EP4272009A1
公开(公告)日：2023-11-08
申请号：EP21816161.0
申请日：2021-11-19
申请人： Crocus Technology Inc. , Crocus Technology S.A.
发明人： SERRANO GUISAN, Santiago , ATES GURCAN, Hakan , ALAOUI, Ali , MOHAN, Anuraag
IPC分类号： G01R33/00 , G01R33/09

3. 发明公开

EP4130772A1 MAGNETORESISTIVE ELEMENT HAVING COMPENSATED TEMPERATURE COEFFICIENT OF TMR 审中-实审转让
公开(公告)号：EP4130772A1
公开(公告)日：2023-02-08
申请号：EP21315136.8
申请日：2021-08-05
申请人： Crocus Technology S.A.
发明人： Timopheev, Andrey , Ducruet, Clarisse , Childress, Jeffrey
IPC分类号： G01R33/09 , H01F10/32 , G01R33/00
摘要： A magnetoresistive element (2) comprising a reference layer (23), a ferromagnetic sense layer (21) having a free sense magnetization (210), and a tunnel barrier layer (22) between the reference layer (23) and the sense layer (21). The sense layer (21) comprises a first sense layer portion (211) in contact with the tunnel barrier layer (22) and a second sense layer portion (212) in contact with the first sense layer portion (211). The first sense layer portion (211) is configured such that a magnetic coupling between the first and second sense layer portions (211, 212) is between ±10 -4 J/m 2 and ±10 -3 J/m 2 ; and a perpendicular magnetic anisotropy (PMA) originating from the interface between the first sense layer portion (211) and the tunnel barrier layer (22) is between 8x10 4 A/m and 8x10 5 A/m, such as to shift positively the TCS of the magnetoresistive element (2) and compensate the negative temperature coefficient of TMR of the magnetoresistive element (2).

4. 发明公开

EP4115192A1 TEMPERATURE COMPENSATED MTJ-BASED SENSING CIRCUIT FOR MEASURING AN EXTERNAL MAGNETIC FIELD 审中-实审转让
公开(公告)号：EP4115192A1
公开(公告)日：2023-01-11
申请号：EP21708754.3
申请日：2021-02-22
申请人： Crocus Technology S.A.
发明人： MOHAN, Anuraag , ZUCKER, Robert
IPC分类号： G01R33/00 , G01R33/09

5. 发明公开

EP4012431A1 MAGNETORESISTIVE ELEMENT FOR SENSING A MAGNETIC FIELD IN A Z-AXIS 审中-实审转让
公开(公告)号：EP4012431A1
公开(公告)日：2022-06-15
申请号：EP20315489.3
申请日：2020-12-11
申请人： Crocus Technology S.A.
发明人： Childress, Jeffrey , Strelkov, Nikita
IPC分类号： G01R33/09 , G01R33/02
摘要： Magnetoresistive element (2) comprising a reference layer (21) having a fixed reference magnetization (210), a sense layer (23) having a free sense magnetization (230) and a tunnel barrier layer (22) between the reference layer (21) and the sense layer (23); the magnetoresistive element (2) being configured to measure an external magnetic field (60) oriented substantially perpendicular to the plane of the layers (21, 23). The reference magnetization (210) being oriented substantially perpendicular to the plane of the reference layer (21). The sense magnetization (230) comprising a vortex configuration in the absence of an external magnetic field (60), the vortex configuration being substantially parallel to the plane of the sense layer (23) and having a vortex core (231) magnetization along an out-of-plane axis (50) substantially perpendicular to the plane of the sense layer (23).

6. 发明公开

EP3994475A1 MAGNETIC FIELD SENSOR FOR SENSING A TWO-DIMENSIONAL EXTERNAL MAGNETIC FIELD HAVING A LOW ANISOTROPY FIELD 审中-实审转让
公开(公告)号：EP3994475A1
公开(公告)日：2022-05-11
申请号：EP20735244.4
申请日：2020-06-26
申请人： Crocus Technology S.A.
发明人： CUCHET, Léa , DUCRUET, Clarisse , CHILDRESS, Jeffrey
IPC分类号： G01R33/09 , G01R33/00

7. 发明公开

EP3879543A1 MAGNETORESISTIVE SENSOR ELEMENT FOR SENSING A TWO-DIMENSIONAL MAGNETIC FIELD WITH LOW HIGH-FIELD ERROR 审中-实审转让
公开(公告)号：EP3879543A1
公开(公告)日：2021-09-15
申请号：EP20315038.8
申请日：2020-03-11
申请人： Crocus Technology S.A.
发明人： Ducruet, Clarisse , Cuchet, Léa , Childress, Jeffrey
IPC分类号： H01F10/32 , G01R33/09 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element (2) for a two-dimensional magnetic field sensor, comprising: a ferromagnetic reference layer (21) having a fixed reference magnetization (210), a ferromagnetic sense layer (23) having a sense magnetization (230) that can be freely oriented relative to the reference magnetization (210) in the presence of an external magnetic field, and a tunnel barrier layer (22) between the reference and sense ferromagnetic layers (21, 23); the reference layer (21) comprising a reference coupling layer (213) between a reference pinned layer (211) and a reference coupled layer (212); the reference coupled layer (212) comprising a first coupled sublayer (214) in contact with the reference coupling layer (213), a second coupled sublayer (215), a third coupled sublayer (217) and a insert layer (216) between the second and third coupled sublayers (215, 217); the insert layer (216) comprising a transition metal and has a thickness between about 0.1 and about 0.5 nm, and the thickness of the reference coupled layer (212) is between about 1 nm and about 5 nm.

8. 发明授权

EP2942780B1 Multi-bit MRAM cell and method for writing and reading to such MRAM cell 有权转让
公开(公告)号：EP2942780B1
公开(公告)日：2019-10-30
申请号：EP14290144.6
申请日：2014-05-09
申请人： Crocus Technology S.A.
发明人： Stainer, Quentin
IPC分类号： G11C11/16 , G11C11/56 , G11C11/15

9. 发明公开

EP3201957A1 ELECTRICAL INTERCONNECTING DEVICE FOR MRAM-BASED MAGNETIC DEVICES 有权转让
标题翻译：基于MRAM的磁性器件的电互连器件
公开(公告)号：EP3201957A1
公开(公告)日：2017-08-09
申请号：EP15774554.8
申请日：2015-09-24
申请人： Crocus Technology S.A.
发明人： CAMBOU, Bertrand
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
摘要： A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.
摘要翻译：电互连装置（10）包括：磁性隧道结（2）; 电连接磁隧道结（2）的下端的绑带部分（7）; 电连接磁隧道结（2）的上端的电流线部分（3'）; 通过通孔（6）电连接下部金属柱（5）的上部金属柱（8）; 带部分（7）与通孔（6）直接电接触，使得通过磁性隧道结（2）的电流直接在带部分（'）和通孔（6）之间以及通孔（6）和下金属立柱（5）或上金属立柱（8）。

10. 发明公开

EP3062215A1 MRAM-BASED PROGRAMMABLE MAGNETIC DEVICE FOR GENERATING RANDOM NUMBERS 有权转让
标题翻译： MRAM-BASIERTE PROGRAMMIERBARE MAGNETISCHE VORRICHTUNG ZUR ERZEUGUNG VON ZUFALLSZAHLEN
公开(公告)号：EP3062215A1
公开(公告)日：2016-08-31
申请号：EP15290039.5
申请日：2015-02-24
申请人： Crocus Technology S.A.
发明人： Bandiera, Sébastien , Stainer, Quentin
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： The invention concerns a programmable magnetic device (1) for generating random numbers during a programming operation, comprising an array (10) of a plurality of magnetic tunnel junctions (2), each magnetic tunnel junction (2) comprising a reference layer (21) having a reference magnetization (210); a tunnel barrier layer (22); and a storage layer (23) having a storage magnetization (230); the programmable magnetic device (1) being arranged such that, during the programming operation, the storage magnetization (230) is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.
摘要翻译：本发明涉及一种用于在编程操作期间产生随机数的可编程磁性装置（1），其包括多个磁性隧道结（2）的阵列（10），每个磁性隧道结（2）包括参考层（21）具有参考磁化（210）; 隧道势垒层（22）; 和具有存储磁化（230）的存储层（23）。可编程磁性装置（1）被布置成使得在编程操作期间，存储磁化（230）可以以不稳定的磁化结构定向，并且可以随机地从不稳定磁化结构中的多个稳定或亚稳定构型中的一个松弛。

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