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1. 发明公开

EP3992655A1 MAGNETORESISTIVE SENSOR ELEMENT HAVING A WIDE LINEAR RESPONSE AND ROBUST NOMINAL PERFORMANCE AND MANUFACTURING METHOD THEREOF 审中-实审转让
公开(公告)号：EP3992655A1
公开(公告)日：2022-05-04
申请号：EP20315443.0
申请日：2020-11-03
申请人： Crocus Technology S.A.
发明人： Childress, Jeffrey , Strelkov, Nikita , Timopheev, Andrey
IPC分类号： G01R33/09 , G01R33/00
摘要： The present disclosure concerns a magnetoresistive element (10) for a magnetic sensor, the magnetoresistive element (10) comprising a tunnel barrier layer (22) included between a reference layer (21) having a fixed reference magnetization (210) and a sense layer (23) having a free sense magnetization (230), wherein the sense magnetization (230) comprises a stable vortex configuration. The magnetoresistive element (10) further comprises a reference pinning layer (24) in contact with the reference layer (21) and pining the reference magnetization (210) by exchange-bias at a first blocking temperature (Tb1). The magnetoresistive element (10) further comprises a sense pinning layer (25) in contact with the sense layer (23) and pining the sense magnetization (230) by exchange-bias at a second blocking temperature (Tb2) lower that the first blocking temperature (Tb1). The present disclosure concerns a method for manufacturing the magnetoresistive element.

2. 发明授权

EP3002759B1 Method for writing in a magnetic device 有权转让
公开(公告)号：EP3002759B1
公开(公告)日：2020-08-05
申请号：EP14290300.4
申请日：2014-10-03
申请人： Crocus Technology S.A.
发明人： Conraux, Yann
IPC分类号： G11C11/16 , H03K19/18

3. 发明授权

EP3385741B1 MAGNETIC SENSOR CELL FOR MEASURING ONE- AND TWO-DIMENSIONAL MAGNETIC FIELDS AND METHOD FOR MEASURING SAID MAGNETIC FIELDS USING THE MAGNETIC SENSOR CELL 有权转让
公开(公告)号：EP3385741B1
公开(公告)日：2019-12-18
申请号：EP17290053.2
申请日：2017-04-07
申请人： Crocus Technology S.A.
发明人： Childress, Jeffrey , Foissac, Romain , Mackay, Kenneth
IPC分类号： G01R33/09

4. 发明授权

EP2477227B1 Magnetic tunnel junction comprising a polarizing layer 有权转让
公开(公告)号：EP2477227B1
公开(公告)日：2019-03-27
申请号：EP11290013.9
申请日：2011-01-13
申请人： Crocus Technology S.A.
发明人： Prejbeanu, Ioan Lucian , Sousa, Ricardo
IPC分类号： H01L27/22 , G11C11/16 , H01F10/32 , H01L43/08 , B82Y25/00

5. 发明授权

EP2905783B1 Method for writing to a multibit TAS-MRAM device configured for self-referenced read operation with improved reproducibly 有权转让
公开(公告)号：EP2905783B1
公开(公告)日：2018-09-19
申请号：EP14290031.5
申请日：2014-02-06
申请人： Crocus Technology S.A.
发明人： Stainer, Quentin
IPC分类号： G11C11/16 , G11C11/56 , H01F10/32 , H01L27/22
CPC分类号： G11C11/1675 , G11C11/5607 , G11C11/5628 , G11C15/02 , H01F10/3272 , H01L27/222
摘要： The present disclosure concerns a method for writing a MRAM device, comprising magnetic tunnel junction (2) with a storage layer (23), a sense layer (21), and a spacer layer (22) between the storage and sense layers (23, 21); at least one of the storage and sense layers (23, 21) having a magnetic anisotropy axis (200); the method comprising an initialization step including: applying an initial heating current pulse (31') for heating the magnetic tunnel junction (2) to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field (60') for adjusting the storage magnetization (230) in an initial direction oriented along the magnetic anisotropy axis (200). The method allows performing the writing step with improved reproducibly.

6. 发明授权

EP3002758B1 Self-referenced MRAM cell and magnetic field sensor comprising the self-referenced MRAM cell 有权转让
标题翻译：自参考MRAM单元和包括自参考MRAM单元的磁场传感器
公开(公告)号：EP3002758B1
公开(公告)日：2017-06-21
申请号：EP14290298.0
申请日：2014-10-03
申请人： Crocus Technology S.A.
发明人： Stainer, Quentin
IPC分类号： G11C11/16 , G01R33/09
CPC分类号： G11C11/1675 , G01R33/098 , G11C11/161 , G11C11/1673
摘要： The present disclosure concerns a self-referenced MRAM cell (1) comprising a reference layer (23) having a fixed reference magnetization (230), a sense layer (21) having a free sense magnetization (210), a tunnel barrier (22), a biasing layer (25) having bias magnetization (250) and a biasing antiferromagnetic layer (27) pinning the bias magnetization (250) in a bias direction when MRAM cell (1) is at temperature equal or below a bias threshold temperature (T B ); the bias magnetization (250) being arranged for inducing a bias field (251) adapted for biasing the sense magnetization (210) in a direction opposed to the bias direction, such that the biased sense magnetization .(210) varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization (230). The present disclosure further concerns a magnetic field sensor (100) comprising a plurality of the self-referenced MRAM cell (1) and a a method for programming the magnetic field sensor.
摘要翻译：本公开涉及包括具有固定参考磁化（230）的参考层（23），具有自由感应磁化强度（210）的感测层（21），隧道势垒（22）的自参考MRAM单元（1），当MRAM单元（1）处于等于或低于偏置阈值温度（TB）的温度时，具有偏置磁化（250）的偏置层（25）和偏置方向上的偏置反铁磁层（27））; 所述偏置磁化（250）被布置用于引起适于在与所述偏置方向相反的方向上偏置所述感测磁化（210）的偏置场（251），使得所述偏置的感测磁化（210）当外部磁场在基本上垂直于参考磁化（230）中的一个的方向上取向时，该外部磁场被施加到外部磁场。本公开还涉及包括多个自参考MRAM单元（1）的磁场传感器（100）以及用于编程磁场传感器的方法。

7. 发明授权

EP2626860B1 SELF-REFERENCED MRAM ELEMENT WITH LINEAR SENSING SIGNAL 有权转让
标题翻译：与线性传感器信号的自参考MRAM单元
公开(公告)号：EP2626860B1
公开(公告)日：2016-11-16
申请号：EP12290043.4
申请日：2012-02-08
申请人： Crocus Technology S.A.
发明人： Lombard, Lucien , MacKay, Kenneth , Prejbeanu, Ioan Lucian
IPC分类号： G11C11/16 , H01F10/32
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254

8. 发明授权

EP2615610B1 MRAM CELL AND METHOD FOR WRITING TO THE MRAM CELL USING A THERMALLY ASSISTED WRITE OPERATION WITH A REDUCED FIELD CURRENT 有权转让
标题翻译：用于使用具有减小的磁场电流热辅助写操作写入MRAM单元的MRAM单元和方法
公开(公告)号：EP2615610B1
公开(公告)日：2016-11-02
申请号：EP12290019.4
申请日：2012-01-16
申请人： Crocus Technology S.A.
发明人： Prejbeanu, Ioan Lucian , Sousa, Ricardo
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161

9. 发明授权

EP2405438B1 Method for writing in a MRAM-based memory device with reduced power consumption 有权转让
标题翻译：写入的方法，具有减少的功率消耗的基于MRAM的存储装置
公开(公告)号：EP2405438B1
公开(公告)日：2016-04-20
申请号：EP10168737.4
申请日：2010-07-07
申请人： Crocus Technology S.A.
发明人： Berger, Neal , El Baraji, Mourad
IPC分类号： G11C8/08 , G11C11/16
CPC分类号： G11C8/08 , G11C11/1673 , G11C11/1675

10. 发明公开

EP2966453A1 MLU based accelerometer using a magnetic tunnel junction 有权转让
标题翻译：多伦多基督教徒Beschleunigungsmesser，呃einen magnetischenTunnelübergangverwendet
公开(公告)号：EP2966453A1
公开(公告)日：2016-01-13
申请号：EP14290201.4
申请日：2014-07-11
申请人： Crocus Technology S.A.
发明人： Alaoui, Ali
IPC分类号： G01P15/08 , G01P15/18 , G01D5/14 , G01R33/09
CPC分类号： G01P15/105 , G01D5/145 , G01P15/0802 , G01P15/0885 , G01P15/18 , G01R33/098
摘要： The present disclosure concerns an MLU-based accelerometer (100) comprising: at least one MLU cell (101-104) comprising a tunnel barrier layer (22) between a first magnetic layer (23) having a fixed first magnetization direction (231) and a second magnetic layer (21) having a second magnetization direction (211) that can be varied; a proof-mass (6) comprising a ferromagnetic material having a proof-mass magnetization (60) inducing a proof-mass field (61), the proof-mass (6) being elastically suspended such as to be able of being deflected in at least one direction when subjected to an acceleration vector, the proof-mass (6) being magnetically coupled to said at least one MLU cell (101-104) via the proof-mass field (61); and a read module configured for determining a magnetoresistance of each of said at least one MLU cell (101-104) such as to determine an acceleration vector from the deflection of the proof-mass (6) relative to any one of said at least one MLU cell (101-104).
摘要翻译：本公开涉及一种基于MLU的加速度计（100），包括：至少一个MLU单元（101-104），其包括在具有固定的第一磁化方向（231）的第一磁性层（23）和具有固定的第一磁化方向（231）的第一磁性层（23）之间的隧道势垒层具有能够变化的第二磁化方向（211）的第二磁性层（21）包括具有引导证明质量场（61）的证明质量磁化（60）的铁磁材料的证明物质（6），所述证明物质（6）被弹性悬浮以能够被偏转当受到加速度矢量时，至少一个方向，证明物质（6）通过证明质量场（61）磁耦合到所述至少一个MLU单元（101-104）; 以及读取模块，其被配置用于确定所述至少一个MLU单元（101-104）中的每一个的磁阻，以便确定相对于所述至少一个中的任何一个的证明块（6）的偏转的加速度矢量 MLU细胞（101-104）。

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