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21. 发明公开

EP3020046A1 DRAM SUB-ARRAY LEVEL AUTONOMIC REFRESH MEMORY CONTROLLER OPTIMIZATION 审中-公开
标题翻译：最优化问题ON SUB-ARRAY水平DRAM独立LAST存储器控制
公开(公告)号：EP3020046A1
公开(公告)日：2016-05-18
申请号：EP14733424.7
申请日：2014-05-20
申请人： Qualcomm Incorporated
发明人： SRIRAMAGIRI, Deepti Vijayalakshmi , SUH, Jungwon , DONG, Xiangyu
IPC分类号： G11C11/406 , G06F13/16
CPC分类号： G11C11/40618 , G06F13/1636 , G11C11/40603 , G11C11/40611
摘要： A method of refreshing a dynamic random access memory (DRAM) includes detecting an open page of the DRAM at a row of a DRAM bank within an open sub-array of the DRAM bank. The method also includes delaying issuance of a refresh command to a target refresh row of the DRAM bank when the target refresh row of the DRAM bank is within the open sub-array of the DRAM bank.

22. 发明授权

EP1550039B1 DYNAMIC MEMORY SUPPORTING SIMULTANEOUS REFRESH AND DATA-ACCESS TRANSACTIONS 有权转让
标题翻译：与支持同时刷新和数据存取交易的动态存储器
公开(公告)号：EP1550039B1
公开(公告)日：2016-03-16
申请号：EP03774772.2
申请日：2003-10-09
申请人： Rambus Inc.
发明人： WARE, Frederick, A. , PEREGO, Richard, E.
IPC分类号： G06F12/00 , G11C11/406 , G06F13/16
CPC分类号： G11C11/406 , G06F12/00 , G06F13/1605 , G11C11/40603
摘要： Described are dynamic memory systems that perform overlapping refresh and data-access (read or write) transactions that minimize the impact of the refresh transaction on memory performance. The memory systems support independent and simultaneous activate and precharge operations directed to different banks. Two sets of address registers enable the system to simultaneously specify different banks for refresh and data-access transactions.

23. 发明授权

EP1406268B1 Integrated circuit device with automatic internal command function 有权
标题翻译：带有自动的内部控制功能集成电路装置
公开(公告)号：EP1406268B1
公开(公告)日：2012-05-30
申请号：EP03027305.6
申请日：2001-04-30
申请人： Fujitsu Semiconductor Limited
发明人： Matsuzaki, Yasurou
IPC分类号： G11C11/406 , G11C11/4072
CPC分类号： G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/40618 , G11C11/4072 , G11C11/4094 , G11C2211/4061 , G11C2211/4065

24. 发明授权

EP1540657B1 SOFTWARE REFRESHED MEMORY DEVICE AND METHOD 有权
标题翻译： DURCH SOFTWARE AUFGEFRISCHTE SPEICHEREINRICHTUNG UND VERFAHREN
公开(公告)号：EP1540657B1
公开(公告)日：2011-07-20
申请号：EP03749204.8
申请日：2003-08-28
申请人： Micron Technology, Inc.
发明人： GILTON, Terry, L.
IPC分类号： G11C11/406 , G11C16/34
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the time interval between successive memory refresh operations is relatively long, as compared to the time interval between successive memory refresh operations in a conventional volatile memory device, such as a DRAM. A processor can perform periodic memory refresh operations by executing a set of memory refresh instructions implemented in software, rather than in hardware. Accordingly, the memory device can advantageously be simplified, because the need for memory refresh circuitry and for a unique refresh control signal are advantageously eliminated. Moreover, the processor executing the memory refresh instructions can typically perform more sophisticated algorithms, as compared to memory refresh circuitry implemented in hardware, for determining when to perform a memory refresh operation. For example, the processor can determine whether each individual memory cell needs to be refreshed, thereby advantageously avoiding performing unnecessary refresh operations on nriemory cells that do not need to be refreshed.
摘要翻译：软件刷新存储器件包括必须定期刷新以避免丢失数据的多个存储器单元。优选地，与常规易失性存储器件（例如DRAM）中的连续存储器刷新操作之间的时间间隔相比，即使连续存储器刷新操作之间的时间间隔相对较长，存储器单元也可避免丢失数据。处理器可以通过执行以软件实现的一组存储器刷新指令而不是硬件来执行周期性的存储器刷新操作。因此，有利地可以简化存储器件，因为有利地消除了对存储器刷新电路和唯一刷新控制信号的需要。此外，与硬件中实现的存储器刷新电路相比，执行存储器刷新指令的处理器通常可以执行更复杂的算法，用于确定何时执行存储器刷新操作。例如，处理器可以确定每个单独的存储器单元是否需要刷新，从而有利地避免对不需要刷新的存储器单元执行不必要的刷新操作。

25. 发明授权

EP1288961B1 Semiconductor memory 有权
公开(公告)号：EP1288961B1
公开(公告)日：2011-01-12
申请号：EP02252317.9
申请日：2002-03-28
申请人： Fujitsu Semiconductor Limited
发明人： Yamaguchi, Shusaku , Uchida, Toshiya , Yagishita, Yoshimasa , Bando, Yoshihide , Yada, Masahiro , Okuda, Masaki , Kobayashi, Hiroyuki , Hara, Kota , Fujioka, Shinya , Fujieda, Waichiro
IPC分类号： G11C11/406 , G11C7/10 , G11C11/4096
CPC分类号： G11C7/1006 , G11C8/12 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/40618 , G11C11/4087 , G11C2211/4061 , G11C2211/4062

26. 发明授权

EP1975941B1 Semiconductor memory, system, and operating method of semiconductor memory 有权
标题翻译：半导体存储系统和操作程序用于半导体存储器
公开(公告)号：EP1975941B1
公开(公告)日：2010-10-27
申请号：EP08101064.7
申请日：2008-01-29
申请人： Fujitsu Semiconductor Limited
发明人： Tomita, Hiroyoshi c/o FUJITSU LIMITED
IPC分类号： G11C11/406
CPC分类号： G11C11/406 , G11C11/40603 , G11C11/40622 , G11C2211/4061

27. 发明授权

EP1808861B1 Multi-port memory based on a plurality of memory cores 有权
标题翻译：多个存储器芯的基础上的多端口存储器
公开(公告)号：EP1808861B1
公开(公告)日：2010-08-04
申请号：EP07103542.2
申请日：2001-10-02
申请人： Fujitsu Semiconductor Limited
发明人： Matsuzaki, Yasurou , Suzuki, Takaaki , Yamazaki, Masafumi , Kawasaki, Kenichi , Kamata, Shinnosuke
IPC分类号： G11C8/16
CPC分类号： G11C7/1051 , G11C7/1039 , G11C7/1075 , G11C7/1078 , G11C7/22 , G11C8/16 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/40618 , G11C11/409 , G11C2207/107

28. 发明公开

EP2035934A4 DUAL-PORT SRAM MEMORY USING SINGLE-PORT MEMORY CELL 审中-公开
标题翻译：具有单端口存储器单元的双端口SRAM存储器
公开(公告)号：EP2035934A4
公开(公告)日：2009-11-25
申请号：EP07811995
申请日：2007-06-01
申请人： MOSYS INC
发明人： LEUNG WINGYU
IPC分类号： G06F12/00 , G11C7/10 , G11C11/406
CPC分类号： G11C7/1075 , G11C11/406 , G11C11/40603

29. 发明授权

EP1833057B1 Semiconductor memory, memory system and refresh method of semiconductor memory 有权
标题翻译：半导体存储器，存储系统和刷新方法的半导体存储器
公开(公告)号：EP1833057B1
公开(公告)日：2009-08-19
申请号：EP06115434.0
申请日：2006-06-14
申请人： Fujitsu Microelectronics Limited
发明人： Kobayashi, Hiroyuki
IPC分类号： G11C11/406
CPC分类号： G11C11/406 , G11C11/40603 , G11C11/40618

30. 发明授权

EP1669999B1 Semiconductor memory 有权
公开(公告)号：EP1669999B1
公开(公告)日：2007-11-07
申请号：EP06004589.5
申请日：2003-02-20
申请人： FUJITSU LIMITED
发明人： Nakamura, Toshikazu c/o Fujitsu Limited , Eto, Satoshi c/o Fujitsu Limited , Miyo, Toshiya c/o Fujitsu Limited
IPC分类号： G11C11/401 , G11C11/4076
CPC分类号： G11C11/40603 , G11C7/22 , G11C11/401 , G11C11/406 , G11C11/40615 , G11C11/4076 , G11C29/02 , G11C29/022 , G11C29/028 , G11C29/50012 , G11C2207/2281 , G11C2211/4061

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