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1. 发明公开

EP4432283A1 STORAGE DEVICE AND METHOD OF OPERATING THE SAME 审中-实审
公开(公告)号：EP4432283A1
公开(公告)日：2024-09-18
申请号：EP24163960.8
申请日：2024-03-15
申请人： Samsung Electronics Co., Ltd.
发明人： KIM, Jonghwa , KANG, Jeong Uk
IPC分类号： G11C7/04 , G11C16/10 , G11C16/20 , G11C16/34 , G11C29/00
CPC分类号： G11C7/04 , G11C29/76 , G11C16/105 , G11C16/20 , G11C16/3431
摘要： A storage device includes a nonvolatile memory comprising a plurality of user blocks and a controller configured to manage the plurality of user blocks in units of super blocks. The controller may perform a first program operation in units of first pages of the super block, and may manage temperature information, associated with the first program operation, in units of a predetermined number of super pages.

2. 发明公开

EP3248194A1 PARTIAL BLOCK ERASE FOR BLOCK PROGRAMMING IN NON-VOLATILE MEMORY 无效
标题翻译：用于非易失性存储器中的块编程的部分块擦除
公开(公告)号：EP3248194A1
公开(公告)日：2017-11-29
申请号：EP15805085.6
申请日：2015-11-25
申请人： SanDisk Technologies LLC
发明人： LAI, Chun-Hung , YIN, Cheng-Kuan , LEE, Shih-Chung , DUTTA, Deepanshu , OOWADA, Ken
IPC分类号： G11C11/56 , G11C16/10 , G11C16/34 , G11C16/04
CPC分类号： G11C16/14 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3431 , G11C16/349 , G11C2211/5648 , G11C2216/24
摘要： A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system erases and soft programs the block prior to beginning programming. The system programs a subset of the word lines of the block for the programming request. After programming the subset of word lines, the system pauses the programming operation and performs an erase operation for the unprogrammed word lines of the block. The already programmed word lines and one or more optional buffer word lines may be inhibited from erasing during the erase operation. After erasing the unprogrammed word lines, the system completes the programming request by programming the remaining user data in the unprogrammed region of the block.

3. 发明授权

EP1506552B1 INCREASING THE EFFECTIVENESS OF ERROR CORRECTION CODES AND OPERATING MULTI-LEVEL MEMORY SYSTEMS BY USING INFORMATION ABOUT THE QUALITY OF THE STORED DATA 有权转让
标题翻译：通过使用存储数据的质量信息提高纠错码的有效性和运行多级存储系统
公开(公告)号：EP1506552B1
公开(公告)日：2016-09-07
申请号：EP03731164.4
申请日：2003-05-12
申请人： SanDisk Technologies Inc.
发明人： GUTERMAN, Daniel, C. , GROSS, Stephen, J. , GONGWER, Geoffrey, S.
IPC分类号： G11C29/00 , G06F11/10
CPC分类号： G11C16/3418 , G06F11/1012 , G06F11/1072 , G11C11/56 , G11C11/5621 , G11C16/3431 , G11C29/00 , G11C29/42 , G11C29/76 , G11C2029/0411

4. 发明授权

EP1717817B8 A semiconductor memory device with information loss self-detect capability 有权转让
标题翻译：可容纳信息丢失检测的半导体存储器件
公开(公告)号：EP1717817B8
公开(公告)日：2016-05-18
申请号：EP05103557.4
申请日：2005-04-29
申请人： Micron Technology, Inc.
发明人： Resta, Claudio , Bedeschi, Ferdinando
IPC分类号： G11C13/00 , G11C16/34
CPC分类号： G11C13/0004 , G11C11/22 , G11C11/2275 , G11C13/0033 , G11C13/0069 , G11C16/3431 , G11C2013/0083

5. 发明公开

EP2669895A3 Stress-based techniques for detecting an imminent readfailure in a non-volatile memory array 有权转让
标题翻译：基于电压的技术在非易失性存储器阵列的检测的即将发生的读取错误的
公开(公告)号：EP2669895A3
公开(公告)日：2015-01-14
申请号：EP13169541.3
申请日：2013-05-28
申请人： Freescale Semiconductor, Inc.
发明人： Eguchi, Richard K. , He, Chen
IPC分类号： G11C16/34 , G11C29/52 , G11C29/06 , G06F11/10 , G11C29/04 , G11C29/42
CPC分类号： G06F11/1048 , G11C16/3418 , G11C16/3422 , G11C16/3431 , G11C29/06 , G11C29/42 , G11C29/50004 , G11C29/52 , G11C2029/0401 , G11C2029/0411
摘要： A technique (700) for detecting an imminent read failure in a non-volatile memory array includes applying a bulk read stress to a plurality of cells of the non-volatile memory array (705) and determining whether the plurality of cells exhibit an uncorrectable error correcting code (ECC) read during an array integrity check at a margin read verify voltage level subsequent to the bulk read stress (718). The technique also includes providing an indication of an imminent read failure for the plurality of cells when the plurality of cells exhibit the uncorrectable ECC read during the array integrity check (720). In this case, the margin read verify voltage level is different from a normal read verify voltage level.

6. 发明公开

EP2619673A2 MEMORY QUALITY MONITOR BASED COMPENSATION METHOD AND APPARATUS 有权
标题翻译：对记忆质量控制薪酬的方法和装置
公开(公告)号：EP2619673A2
公开(公告)日：2013-07-31
申请号：EP11827202.0
申请日：2011-09-08
申请人： Micron Technology, Inc.
发明人： LIIKANEN, Bruce, A. , CADLONI, Gerald, L. , KOUDELE, Larry, J. , SEABURY, John, L. , VAN AKEN, Stephen, P. , WAGNER, Guy, R.
IPC分类号： G06F12/00 , G06F11/30 , G11C16/06
CPC分类号： G06F11/1076 , G06F11/08 , G06F11/1048 , G11C7/1006 , G11C11/5621 , G11C11/5642 , G11C11/5671 , G11C13/0033 , G11C13/0035 , G11C16/3431 , G11C16/349 , H03M13/1111 , H03M13/1515 , H03M13/152 , H03M13/3738 , H03M13/41 , H03M13/4138
摘要： In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. A quality monitor establishes a relationship between a current value of the quality metric and a threshold value and monitors the relationship as being indicative of a degradation of the quality of the retrieved data, and selectively initiates an error response. In another embodiment, a correction value is iterated through a set of values as a quality metric is monitored such that the value of the quality metric which most closely approaches the value of the quality metric immediately subsequent to an initial writing of the data can be selected.

7. 发明授权

EP1741107B1 REFRESHING DATA STORED IN A FLASH MEMORY 有权
标题翻译：刷新按所存储闪存
公开(公告)号：EP1741107B1
公开(公告)日：2012-06-13
申请号：EP05730972.6
申请日：2005-04-14
申请人： SanDisk IL Ltd.
发明人： RONEN, Amir
IPC分类号： G11C7/00 , G11C16/00 , G11C16/06
CPC分类号： G11C16/3418 , G11C11/406 , G11C11/40622 , G11C16/3431
摘要： Data are stored in one or more cells of a non-volatile memory, and are refreshed according to a predetermined condition. The data are refreshed either in-place or out-of-place. The condition may be related to the age of the data. Alternatively, the data are refreshed periodically, or when the system that includes the memory boots or dismounts, or according to the type of the data.

8. 发明公开

EP2449467A1 METHOD AND DEVICE FOR SELECTIVELY REFRESHING A REGION OF A MEMORY OF A DATA STORAGE DEVICE 有权
标题翻译：方法和设备的选择性更新数据存储设备的存储区域
公开(公告)号：EP2449467A1
公开(公告)日：2012-05-09
申请号：EP10726773.4
申请日：2010-06-23
申请人： SanDisk Technologies, Inc.
发明人： D'ABREU, Manuel, Antonio , SKALA, Stephen
IPC分类号： G06F11/00 , G06F11/10 , G11C11/4076
CPC分类号： G11C16/10 , G06F11/1068 , G11C16/3431
摘要： A method and device for selectively refreshing a region of a non volatile memory of a data storage device is disclosed. In a particular embodiment, a method is disclosed that includes comparing a time stamp received from a host device to a first time stamp retrieved from a data storage device for a first region of a non volatile memory, the first region including a least recently accessed region of a memory array within the data storage device. The method also includes selectively refreshing the first region based on a comparison of a difference between the time stamp received from the host device and the first time stamp as compared to a threshold, where the threshold is adjusted based on a first error count corresponding to a number of errors detected by an error correction code (ECC) engine with respect to data retrieved from the first region.

9. 发明授权

EP2293305B1 Memory device refreshed by force and method 有权
标题翻译： Gezwungen aufgefrischte Speicheranordnung und Verfahren
公开(公告)号：EP2293305B1
公开(公告)日：2012-05-09
申请号：EP10075616.2
申请日：2003-08-28
申请人： Micron Technology, Inc.
发明人： Gilton, Terry L.
IPC分类号： G11C11/406 , G11C16/34
CPC分类号： G11C5/005 , G11C11/406 , G11C11/40603 , G11C11/40622 , G11C13/0004 , G11C13/0011 , G11C13/0033 , G11C13/0069 , G11C16/3431

10. 发明公开

EP2333780A1 Maintenance operations for multi-level data storage cells 失效
标题翻译： Wartungsarbeitenfürmehrstufige Datenspeicherzellen
公开(公告)号：EP2333780A1
公开(公告)日：2011-06-15
申请号：EP11159438.8
申请日：2007-05-14
申请人： Apple Inc.
发明人： Cornwell, Michael J. , Dudte, Christopher P.
IPC分类号： G11C11/56 , G11C16/28
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642 , G11C16/30 , G11C16/3418 , G11C16/3431 , G11C16/349 , G11C29/00 , G11C2211/5641
摘要： Systems and methods, including computer software, for reading data from a flash memory cell (124) involve detecting voltages from a group of memory cells. The group of memory cells have associated metadata for error detection (605), and each memory cell stores a voltage representing a data value selected from a plurality of possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages (610). Alternative data values for the memory cells having the uncertain data values are determined (615). A combination of alternative data values is selected (625), and an error detection test is performed (635) using the metadata associated with the memory cells and the selected combination of alternative data values.
摘要翻译：用于从闪存单元（124）读取数据的系统和方法（包括计算机软件）涉及检测来自一组存储器单元的电压。存储器单元组具有用于错误检测的相关联的元数据（605），并且每个存储器单元存储表示从多个可能数据值中选择的数据值的电压。每个可能的数据值对应于模拟电压的多个非重叠范围的一个范围。基于检测到的电压来识别具有不确定数据值的存储单元（610）。确定具有不确定数据值的存储单元的替代数据值（615）。选择替代数据值的组合（625），并且使用与存储器单元相关联的元数据和所选择的备选数据值的组合来执行错误检测测试（635）。

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