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11. 发明授权

EP2848716B1 SINGLE CRYSTAL DIAMOND AND DIAMOND TOOL 有权
公开(公告)号：EP2848716B1
公开(公告)日：2019-12-25
申请号：EP14792151.4
申请日：2014-04-16
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , UEDA, Akihiko , SUMIYA, Hitoshi , KOBAYASHI, Yutaka , SEKI, Yuichiro , TAKAHASHI, Toshiya
IPC分类号： C30B29/04 , C30B25/18 , C30B25/20 , C01B32/25

12. 发明公开

EP3327179A1 SINGLE CRYSTAL DIAMOND MATERIAL, SINGLE CRYSTAL DIAMOND TIP, AND DRILLING TOOL 有权
公开(公告)号：EP3327179A1
公开(公告)日：2018-05-30
申请号：EP16827871.1
申请日：2016-07-22
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , TATSUMI, Natsuo , SUMIYA, Hitoshi , UEDA, Akihiko , KOBAYASHI, Yutaka
IPC分类号： C30B29/04 , B23B51/00 , C23C16/27 , C30B25/20
CPC分类号： C30B29/04 , B21C3/025 , C23C16/27 , C23C16/274 , C30B9/00 , C30B25/105 , C30B25/186 , C30B25/20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. In a single-crystal diamond chip, a concentration of non-substitutional nitrogen atoms can be not more than 200 ppm, a concentration of substitutional nitrogen atoms can be lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond chip can have a main surface with an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal die has a low-index plane represented by a Miller index of not less than -5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

13. 发明公开

EP3326729A1 DIAMOND DIE 有权
公开(公告)号：EP3326729A1
公开(公告)日：2018-05-30
申请号：EP16827869.5
申请日：2016-07-22
申请人： Sumitomo Electric Hardmetal Corp. , Sumitomo Electric Industries, Ltd. , A.L.M.T. Corp.
发明人： YUKAWA, Makoto , SUEMITSU, Bunya , KINOSHITA, Takuya , SUMIMOTO, Shigetoshi , KOBAYASHI, Yutaka , UEDA, Akihiko , TATSUMI, Natsuo , NISHIBAYASHI, Yoshiki , SUMIYA, Hitoshi
IPC分类号： B21C3/02 , C23C16/27 , C30B29/04
摘要： A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.

14. 发明公开

EP3170926A1 SINGLE CRYSTAL DIAMOND, METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND, AND TOOL USING SINGLE CRYSTAL DIAMOND 审中-公开
标题翻译：单晶工艺生产具有单晶金刚石工具，使用单晶金刚石
公开(公告)号：EP3170926A1
公开(公告)日：2017-05-24
申请号：EP15821748.9
申请日：2015-07-14
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , TATSUMI, Natsuo , SUMIYA, Hitoshi , UEDA, Akihiko , KOBAYASHI, Yutaka
IPC分类号： C30B29/04 , B23B27/14 , B23B27/20
CPC分类号： C30B29/04 , C01B32/25 , C30B25/186 , C30B25/20
摘要： Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
摘要翻译：哪种硬度和耐崩裂性的单晶金刚石已经以平衡的方式，用于制造该单晶金刚石的方法进行了改进，并提供了含有金刚石的工具。单晶金刚石含有氮原子，且在单晶金刚石在单晶金刚石的氮原子的总数分离的取代氮原子的数目的比例为不大于0.02％且低于40％。

15. 发明公开

EP2226413A1 PROCESS FOR PRODUCING DIAMOND SINGLE CRYSTAL WITH THIN FILM AND DIAMOND SINGLE CRYSTAL WITH THIN FILM 有权
标题翻译：用于生产单单只钻石晶体薄膜金刚石单晶与薄膜
公开(公告)号：EP2226413A1
公开(公告)日：2010-09-08
申请号：EP07860225.7
申请日：2007-12-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , MEGURO, Kiichi , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, characterized in that the principal surface has an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film according to the present invention is characterized in that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译：一种用于在其中磷原子/碳原子比为条件下的{111}单晶衬底的主面在300K生长具有300©厘米或更小的电阻率的低电阻掺磷外延薄膜方法 3％或更高，其特征在于，所做的主面具有在零时50°或更大的偏离角。具有低电阻掺磷金刚石外延薄膜雅丁到本发明的金刚石单晶中做了薄膜表面的特征在于具有计划偏角的0.50°或更大的相对于{111}，并且低电阻掺磷金刚石外延薄膜的比电阻为300厘米©或更小在300 K.

16. 发明公开

EP2065915A1 DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： DIAMANTELEKTRONENQUELLE UND DEREN HERSTELLUNGSVERFAHREN
公开(公告)号：EP2065915A1
公开(公告)日：2009-06-03
申请号：EP07807459.8
申请日：2007-09-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , YAMAMOTO, Yoshiyuki , NISHIBAYASHI, Yoshiki , IMAI, Takahiro
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source.
One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译：一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点器件，以及金刚石电子源的制造方法。研磨柱状金刚石单晶10的一端，形成平坦的平坦面11，在平滑平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

17. 发明公开

EP4190470A1 CUBIC BORON NITRIDE SINTERED BODY AND CUTTING TOOL INCLUDING SAME 审中-实审
公开(公告)号：EP4190470A1
公开(公告)日：2023-06-07
申请号：EP21850760.6
申请日：2021-07-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Sumitomo Electric Hardmetal Corp.
发明人： ISHII, Akito , WATANABE, Yuichiro , OKAMURA, Katsumi , ASAKAWA, Yoshiki , UEDA, Akihiko , KUKINO, Satoru , HAMA, Hisaya
IPC分类号： B23B27/14 , B23B27/20 , C22C29/08 , C22C29/16 , C22C1/05 , C04B35/5831 , C04B35/5835
摘要： A cubic boron nitride sintered material includes 70 vol% or more and less than 100 vol% of cubic boron nitride and a binder. The binder includes a first material and a second material. The first material is one or two or more first chemical species each including at least one first metallic element selected from the group consisting of tungsten, cobalt, and aluminum. Each of the first chemical species is a metal, an alloy, an intermetallic compound, a compound, or a solid solution. The second material is one or two or more second chemical species each including at least one second metallic element selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, and chromium. Each of the second chemical species is a solid solution derived from at least one selected from the group consisting of nitride, carbide, and carbonitride. In each of the second chemical species, 0.1 atom% to 10 atom% of aluminum is dissolved in a solid state, and the second material is grains having an average grain size of 1 µm or less.

18. 发明授权

EP3326729B1 DIAMOND DRAWING DIE 有权
公开(公告)号：EP3326729B1
公开(公告)日：2020-02-26
申请号：EP16827869.5
申请日：2016-07-22
申请人： Sumitomo Electric Hardmetal Corp. , Sumitomo Electric Industries, Ltd. , A.L.M.T. Corp.
发明人： YUKAWA, Makoto , SUEMITSU, Bunya , KINOSHITA, Takuya , SUMIMOTO, Shigetoshi , KOBAYASHI, Yutaka , UEDA, Akihiko , TATSUMI, Natsuo , NISHIBAYASHI, Yoshiki , SUMIYA, Hitoshi
IPC分类号： B21C3/02 , C23C16/27 , C30B29/04

19. 发明公开

EP3366815A1 SINGLE-CRYSTAL DIAMOND, TOOL USING SAME, AND MANUFACTURING METHOD FOR SINGLE-CRYSTAL DIAMOND 审中-公开
公开(公告)号：EP3366815A1
公开(公告)日：2018-08-29
申请号：EP16857366.5
申请日：2016-10-14
申请人： Sumitomo Electric Industries, Ltd. , Sumitomo Electric Hardmetal Corp.
发明人： NISHIBAYASHI, Yoshiki , TATSUMI, Natsuo , NOHARA, Takuya , KOBAYASHI, Yutaka , UEDA, Akihiko
IPC分类号： C30B29/04 , B21C3/02 , B23B27/14 , B23B27/20 , C23C16/27 , C23C16/56
CPC分类号： B21C3/025 , B21C3/02 , B23B27/14 , B23B27/20 , C23C16/27 , C23C16/56 , C30B25/02 , C30B29/04
摘要： A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

20. 发明公开

EP2868780A1 DIAMOND SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF, AND SINGLE CRYSTAL DIAMOND TOOL 有权
标题翻译： DIAMANTEINKRISTALL UND HERSTELLUNGSVERFAHRENDAFÜRSOWIE EINKRISTALLDIAMANTWERKZEUG
公开(公告)号：EP2868780A1
公开(公告)日：2015-05-06
申请号：EP13809060.0
申请日：2013-06-27
申请人： Sumitomo Electric Industries, Ltd.
发明人： UEDA, Akihiko , NISHIBAYASHI, Yoshiki , SUMIYA, Hitoshi
IPC分类号： C30B29/04 , C01B31/06 , C23C16/27
摘要： A diamond single crystal according to the present invention is a diamond single crystal synthesized using a chemical vapor synthesis method and has an absorption coefficient of 25 cm -1 or more and 80 cm -1 or less for light having a wavelength of 350 nm. A method for producing a diamond single crystal according to the present invention includes implanting an ion other than carbon into a main surface of a diamond single crystal seed substrate and thereby decreasing the transmittance of light having a wavelength of 800 nm, the main surface having an off-angle of 7 degrees or less with respect to a {100} plane, and homoepitaxially growing a diamond single crystal on the ion-implanted main surface of the seed substrate using a chemical vapor synthesis method under synthesis conditions where the ratio N C /N H of the number of carbon-containing molecules N C to the number of hydrogen molecules N H in a gas phase is 10% or more and 40% or less, the ratio N N /N C of the number of nitrogen molecules N N to the number of carbon-containing molecules N C in the gas phase is 0.1% or more and 10% or less, and the seed substrate temperature T is 850°C or more and less than 1000°C.
摘要翻译：根据本发明的金刚石单晶是使用化学气相合成法合成的金刚石单晶，并且对于波长为350nm的光具有25cm -1以上且80cm -1以下的吸收系数。根据本发明的制造金刚石单晶的方法包括将不同于碳的离子注入到金刚石单晶种子基片的主表面中，从而降低波长为800nm的光的透射率，主表面具有使用化学汽相合成法在种子底物的离子注入的主表面上同时外延生长金刚石单晶，其中NC / NH比例为{100}平面为7度以下，的含碳分子数目相对于气相中的氢分子数NH的数量为10％以上且40％以下，氮分子数NN与NC的数量的比率NN / NC 气相中的分子NC为0.1％以上且10％以下，种子基质温度T为850℃以上且小于1000℃。

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