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1. 发明授权

US4882260A Positive-working photosensitive quinone diazide composition with alkali insoluble dye and alkali soluble dye 失效
标题翻译：正色光敏醌二叠氮化合物与碱不溶性染料和碱溶性染料
公开(公告)号：US4882260A
公开(公告)日：1989-11-21
申请号：US059556
申请日：1987-06-05
申请人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
发明人： Hidekatsu Kohara , Nobuo Tokutake , Masanori Miyabe , Toshimasa Nakayama , Shingo Asaumi , Hatsuyuki Tanaka , Yoshiaki Arai
IPC分类号： G03C1/00 , C09D161/08 , G03C1/72 , G03F7/004 , G03F7/022 , G03F7/025 , G03F7/04 , G03F7/09 , H01L21/027 , H01L21/30
CPC分类号： G03F7/091
摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要翻译：在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料波长范围为230〜500nm，以规定的量和它们之间的规定比例。由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现图案线的横截面形状的良好矩形度的细度范围。

2. 发明授权

US4731319A Positive-working naphthoquinone diazide photoresist composition with two cresol novolac resins 失效
标题翻译：具有两种甲酚酚醛清漆树脂的正性萘醌二叠氮化合物光致抗蚀剂组合物
公开(公告)号：US4731319A
公开(公告)日：1988-03-15
申请号：US886839
申请日：1986-07-18
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama
IPC分类号： G03C1/72 , G03F7/022 , G03F7/023 , H01L21/027 , G03C1/54 , G03C1/60
CPC分类号： G03F7/0236
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.
摘要翻译：适用于制造半导体器件的精细图案化的正性光致抗蚀剂组合物，例如，提出了高保真的VLSI。该组合物包含甲酚酚醛清漆树脂和萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分特征是两种不同甲酚酚醛清漆树脂的组合，其重均分子量分别为大，一小的，并且用于制备酚醛清漆的甲酚和m-异构体的m-和p-异构体的重量比例，其中一个富含m-异构体和另一个富含p-异构体的重量比例，这样组合的甲酚酚醛清漆树脂中的甲酚和对甲酚部分也应在特定的范围内。

3. 发明授权

US5281508A Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效
标题翻译：含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： C08G8/08 , C08K5/42 , G03F7/032 , G03F7/023
CPC分类号： G03F7/032 , C08G8/08 , C08K5/42
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译：提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

4. 发明授权

US4906549A Positive-working photoresist composition with quinone diazide sulfonic acid ester and novolac made from m-cresol, p-cresol and aliphatic phenol with 2-6 carbon atoms 失效
标题翻译：醌二叠层磺酸酯和由具有2-6个碳原子的间甲酚，对甲酚和脂族苯酚制成的酚醛清漆的正性光致抗蚀剂组合物
公开(公告)号：US4906549A
公开(公告)日：1990-03-06
申请号：US182848
申请日：1988-04-18
申请人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
发明人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Toshimasa Nakayama
IPC分类号： G03C1/72 , C08G8/12 , C08G8/24 , C08K5/43 , C08L61/08 , G03F7/023 , G03F7/025 , G03F7/22 , H01L21/027
CPC分类号： G03F7/0236 , C08G8/12 , C08G8/24 , C08K5/43
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacturing of semiconductor devices such as VLSIs with high fidelity is proposed. The composition comprises: (A) 100 parts by weight of a phenolic novolac resin prepared by the condensation reaction of a specific ternary mixture of three kinds of phenolic compounds and formaldehyde; and (B) 20-60 parts by weight of a photosensitizer which is preferably an ester of naphthoquinone diazidesulfonic acid and a hydroxylated benzophenone compound. The phenolic mixture is composed of 10-45% by weight of m-cresol, 35-88% by weight of p-cresol and 2-30% by weight of a substituted phenol represented by the general formula R.C.sub.6 H.sub.4.OH, in which R is a monovalent aliphatic hydrocarbon group having 2-6 carbon atoms selected from alkyl and alkenyl groups.
摘要翻译：提出了适用于制造半导体器件（例如具有高保真度的VLSI）的精细图案化的正性光致抗蚀剂组合物。该组合物包括：（A）100重量份通过三种酚类化合物和甲醛的特定三元混合物的缩合反应制备的酚醛清漆树脂; 和（B）20-60重量份的优选萘醌二叠氮磺酸和羟基化二苯甲酮化合物的酯的光敏剂。酚类混合物由10-45重量％的间甲酚，35-88重量％的对甲酚和2-30重量％的由通式R.C 6 H 4.OH表示的取代的苯酚组成，在其中R为选自烷基和烯基的2-6个碳原子的一价脂族烃基。

5. 发明授权

US4833067A Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant 失效
标题翻译：用于正工作光致抗蚀剂的显影溶液包含tmah和非离子表面活性剂
公开(公告)号：US4833067A
公开(公告)日：1989-05-23
申请号：US246930
申请日：1988-09-19
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03C1/72 , G03C5/18 , G03F7/30 , G03F7/32 , H01L21/027 , H01L21/30
CPC分类号： G03F7/322 , G03C5/18
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要翻译：本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。

6. 发明授权

US4804612A Highly heat-resistant positive-working o-quinone diazide containing photoresist composition with novolac resin made from phenol with ethylenic unsaturation 失效
标题翻译：含酚酚醛树脂制成的具有烯键式不饱和度的高耐热正性邻醌醌二叠氮化物
公开(公告)号：US4804612A
公开(公告)日：1989-02-14
申请号：US62954
申请日：1987-06-16
申请人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Shingo Asaumi , Hidekatsu Kohara , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： G03C1/72 , C08G8/08 , G03C1/10 , G03F7/023 , G03F7/22 , H01L21/027 , G03C1/60 , G03C1/495
CPC分类号： C08G8/08 , G03F7/0236
摘要： Although the positive-working photoresist composition comprises a phenolic novolac resin as the film-forming component and a known photosensitizing compound as in conventional compositions, the novolac resin is prepared from a specific mixture of two classes of phenolic compounds including, one, phenol, cresols and/or resorcinol and, the other, one or more of the phenolic compounds having a nucleus-substituting group selected from allyloxy, allyloxymethyl, allyl dimethyl silyl, 2-(allyl dimethyl silyl) ethoxy, cinnamoyl, acryloyl and methacryloyl groups. By virtue of this unique combination to give the phenolic moiety in the novolac resin, the photoresist composition has markedly improved heat resistance as well as stability against plasma in dry etching so that the composition can give a patterned photoresist layer with extreme fineness having high fidelity to the mask pattern.
摘要翻译：尽管正性光致抗蚀剂组合物包含作为成膜组分的酚醛酚醛树脂和常规组合物中已知的光敏化合物，但酚醛清漆树脂由两类酚类化合物的特定混合物制备，包括一种酚类，甲酚和/或间苯二酚，另一种，一种或多种具有选自烯丙氧基，烯丙氧基甲基，烯丙基二甲基甲硅烷基，2-（烯丙基二甲基甲硅烷基）乙氧基，肉桂酰基，丙烯酰基和甲基丙烯酰基的取代基的酚类化合物。由于这种独特的组合使得酚醛部分在酚醛清漆树脂中，光致抗蚀剂组合物在干蚀刻中具有显着改善的耐热性以及抗等离子体的稳定性，使得组合物可以给出具有高保真度的极细度的图案化光致抗蚀剂层掩模图案。

7. 发明授权

US4784937A Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant 失效
标题翻译：用于正性光致抗蚀剂的显影液，其包含无金属离子的有机碱和阴离子表面活性剂
公开(公告)号：US4784937A
公开(公告)日：1988-11-15
申请号：US892646
申请日：1986-08-04
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.
摘要翻译：本发明的正性光致抗蚀剂组合物的含水显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，含有50-5000ppm阴离子或非离子表面活性剂非离子型含氟表面活性剂。与没有这种表面活性剂的常规显影溶液相比，本发明的显影溶液在图案化光致抗蚀剂层的均匀性方面是有利的，并且具有较高的灵敏度和较小的显影温度依赖性。

8. 发明授权

US4873177A Method for forming a resist pattern on a substrate surface and a scum-remover therefor 失效
标题翻译：在基板表面上形成抗蚀剂图案的方法和用于其的浮渣除去器
公开(公告)号：US4873177A
公开(公告)日：1989-10-10
申请号：US229762
申请日：1988-08-05
申请人： Hatsuyuki Tanaka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Yoshiyuki Sato , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The pattern-wise photoresist layer formed on the surface of a substrate according to the inventive method is imparted with a greatly improved resolving power as a result of complete removal of the scum residua left after the development treatment. Namely, the positive-working photoresist layer formed on the substrate surface is exposed pattern-wise to actinic rays, developed with a developer solution which is typically a 2-7% aqueous solution of a quaternary ammonium hydroxide and then rinsed with a scum-remover solution which is a mixture of 100 parts of a 0.1-1.5% aqueous solution of a quaternary ammonium hydroxide and 1-30 parts of a water-miscible organic solvent and capable of dissolving away the scum residua in the pattern-wise photoresist layer without affecting the quality of the photoresist pattern reproduction.
摘要翻译：根据本发明方法形成在基材表面上的图案光致抗蚀剂层由于在显影处理后完全除去剩余的浮渣残留物而赋予极大改进的分辨能力。也就是说，形成在基板表面上的正性光致抗蚀剂层以图案方式暴露于光化学射线，用显影剂溶液显影，显影剂溶液通常为2-7％氢氧化季铵水溶液，然后用浮渣除去剂溶液，其为100份0.1-1.5％的季铵氢氧化物水溶液和1-30份水混溶性有机溶剂的混合物，并且能够将浮渣残留物溶解在图案化光致抗蚀剂层中而不影响光刻胶图案再现的质量。

9. 发明授权

US5100758A Positive-working photoresist composition containing quinone diazide compound, novolak resin and alkyl pyruvate solvent 失效
标题翻译：含有醌二叠氮化合物，酚醛清漆树脂和丙酮酸烷基酯溶剂的正性光致抗蚀剂组合物
公开(公告)号：US5100758A
公开(公告)日：1992-03-31
申请号：US623014
申请日：1990-12-06
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/004 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0048
摘要： A proposal is made for the use of an alkyl pyruvate or a solvent mixture mainly composed thereof as a solvent in a positive-working photoresist composition comprising an alkali-soluble novolac resin as the film-forming ingredient and a quinone diazide group-containing compound as the photosensitive ingredient. By virtue of the use of the unique solvent, the photoresist composition is advantageous in the outstandingly high stability with little moisture absorption from ambience not to cause precipitation of solid matters in addition to the quite satisfactory properties in other respects as a photoresist composition.
摘要翻译：提出在主要由它们构成的作为溶剂的烷基丙酮酸盐或其溶剂混合物中使用含有碱溶性酚醛清漆树脂作为成膜成分的正性光致抗蚀剂组合物和含醌二叠氮基化合物作为感光成分。由于使用独特的溶剂，光致抗蚀剂组合物除了在其它方面作为光致抗蚀剂组合物的相当令人满意的性能外，还具有突出的高稳定性，而且从环境几乎没有吸湿性而不会引起固体物质沉淀。

10. 发明授权

US4824762A Method for rinse treatment of a substrate 失效
标题翻译：冲洗处理基材的方法
公开(公告)号：US4824762A
公开(公告)日：1989-04-25
申请号：US67313
申请日：1987-06-26
申请人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
发明人： Masakazu Kobayashi , Shingo Asaumi , Hatsuyuki Tanaka
IPC分类号： H01L21/30 , G03C11/00 , G03F7/00 , G03F7/26 , G03F7/42 , H01L21/027 , H01L21/461 , G03C11/12 , G03C5/00
CPC分类号： G03F7/425
摘要： The improvement of the invention consists in the use of a specific ether compound, e.g., diethyleneglycol monomethyl, monoethyl and monobutyl ethers, dipropyleneglycol monomethyl and monoethyl ethers, triethyleneglycol monomethyl and monoethyl ethers and tripropyleneglycol monomethyl ether, as a rinse solvent for a substrate from which the pattern photoresist layer has been removed with a remover solution in the photolithographic processing of semiconductor devices. The rinse solvent is free from the problems in the toxicity to human body and environment pollution relative to waste disposal as well as the danger of fire. The rinse solvent is versatile to be applicable to both of the negative- and positive-working photoresist compositions. Further advantages are obtained by adding an aliphatic amine compound to the rinse solvent.
摘要翻译：本发明的改进在于使用特定的醚化合物，例如二甘醇单甲基，单乙基和单丁基醚，二丙二醇单甲基和单乙基醚，三乙二醇单甲基和单乙基醚和三丙二醇单甲醚作为底物的漂洗溶剂，在半导体器件的光刻处理中，用去除剂溶液除去图案光致抗蚀剂层。冲洗溶剂没有相对于废物处理对人体的毒性和环境污染的问题以及火灾的危险。漂洗溶剂是通用的，适用于负性和正性光致抗蚀剂组合物。通过向漂洗溶剂中加入脂族胺化合物可获得进一步的优点。

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