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1. 发明申请

US20070095367A1 Apparatus and method for atomic layer cleaning and polishing 审中-公开
标题翻译：用于原子层清洁和抛光的装置和方法
公开(公告)号：US20070095367A1
公开(公告)日：2007-05-03
申请号：US11262445
申请日：2005-10-28
申请人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
发明人： Yaxin Wang , Fang Mei , Van Nguyen , Arulkumar Shanmugasundram , Dmitry Lubomirsky
IPC分类号： B08B7/04 , B08B3/00 , B08B7/00
CPC分类号： H01L21/67046
摘要： The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (Å). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate. The fluid is thus used to lubricate the surfaces in contact and to carry any abraded material away from the surface of the substrate. In one aspect, the fluid may be DI water. In one aspect, it may be desirable to add ultrasonic or megasonic agitation to the substrate during the cleaning process to help remove or dislodge material from the surface of the substrate.
摘要翻译：本发明总体上提供了一种加工基材的装置和方法，以通过使用适当的清洁化学品和与清洁介质的接触来均匀地除去基材表面的任何残余污染物。在一个实施例中，清洁介质，例如位于清洁模块中的刷子或擦洗部件。在一个实施例中，清洁衬底W的表面的过程通过“擦洗”衬底的表面而完成，同时使用选择用于从衬底的表面化学蚀刻材料的清洁溶液。在一个方面，从衬底的表面去除的材料的量仅为约10-30埃（）。在一个实施例中，通过使用使用不与衬底表面上暴露的材料反应的流体的洗涤过程来清洁衬底表面。因此，流体用于润滑接触表面并将任何磨损的材料携带离开基底的表面。在一个方面，流体可以是去离子水。在一个方面，可能期望在清洁过程中向基底添加超声波或兆声波搅拌以帮助从衬底的表面移除或移除材料。

2. 发明申请

US20070111519A1 INTEGRATED ELECTROLESS DEPOSITION SYSTEM 审中-公开
标题翻译：集成电沉积系统
公开(公告)号：US20070111519A1
公开(公告)日：2007-05-17
申请号：US11428230
申请日：2006-06-30
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Michael Stewart , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1653 , C23C18/168 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C25D7/123 , C25D17/001 , H01L21/02063 , H01L21/02068 , H01L21/02087 , H01L21/28518 , H01L21/28562 , H01L21/67051 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/68785 , H01L21/76814 , H01L21/76843 , H01L21/76856 , H01L21/76873 , H01L21/76874
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。一个实施例提供了一种在衬底互连上形成覆盖层的方法。方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

3. 发明申请

US20060033678A1 Integrated electroless deposition system 审中-公开
标题翻译：集成无电沉积系统
公开(公告)号：US20060033678A1
公开(公告)日：2006-02-16
申请号：US11192993
申请日：2005-07-29
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Allen D'Ambra , Timothy Weidman , Eugene Rabinovich , Svetlana Sherman , Manoocher Birang , Yaxin Wang , Michael Yang , Bradley Hansen
IPC分类号： G09G3/00 , H05H1/24 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/06 , C23C16/34 , C23C16/4488 , C23C18/1632 , C23C18/1653 , H01L21/28556 , H01L21/288 , H01L21/6719 , H01L21/67207 , H01L21/6723 , H01L21/67742 , H01L21/67745 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
摘要翻译：本发明的实施例提供了一种集群工具，其被配置为通过使用一个或多个化学镀，CVD和/或ALD处理室将材料沉积到衬底表面上。一方面，形成含钌催化剂层。本发明的实施例提供了一种混合沉积系统，其被配置为利用无电解方法将种子层沉积在衬底上，并随后用ECP单元填充衬底上的互连特征。其它方面提供一种无电镀沉积系统，其被配置为将衬底层沉积在衬底上，填充衬底上的互连特征，或者顺序地沉积衬底上的晶种层和填充互连特征。一个实施例提供了一种配置成在衬底互连上形成覆盖层的无电沉积系统。该系统包括蒸发干燥器，用于底物的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

4. 发明授权

US07827930B2 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US07827930B2
公开(公告)日：2010-11-09
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
IPC分类号： B05C3/02
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

5. 发明授权

US07341633B2 Apparatus for electroless deposition 有权
标题翻译：无电沉积装置
公开(公告)号：US07341633B2
公开(公告)日：2008-03-11
申请号：US10965220
申请日：2004-10-14
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian A. Pancham , Sergey Lopatin
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian A. Pancham , Sergey Lopatin
IPC分类号： B05C3/09 , B05C13/02
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译：本发明的实施例通常提供流体处理平台。平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元和主机机器人。

6. 发明申请

US20050181226A1 Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber 审中-公开
公开(公告)号：US20050181226A1
公开(公告)日：2005-08-18
申请号：US11040962
申请日：2005-01-22
申请人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
发明人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
IPC分类号： C23C18/16 , C23C18/50 , H01L21/02 , H01L21/288 , H01L21/768 , B05C3/00 , B05D1/18
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

7. 发明申请

US20050081785A1 Apparatus for electroless deposition 有权
标题翻译：无电沉积装置
公开(公告)号：US20050081785A1
公开(公告)日：2005-04-21
申请号：US10965220
申请日：2004-10-14
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
IPC分类号： B05C3/00 , B05C19/02 , C23C18/16 , C23C18/28 , C23F1/00 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译：本发明的实施例通常提供流体处理平台。平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元和主机机器人。

8. 发明授权

US07473339B2 Slim cell platform plumbing 失效
标题翻译：细胞细胞平台管道
公开(公告)号：US07473339B2
公开(公告)日：2009-01-06
申请号：US10826489
申请日：2004-04-16
申请人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
发明人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
IPC分类号： C25D17/00 , C25D21/14 , C25D7/12
CPC分类号： C25D17/00
摘要： Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.
摘要翻译：本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于与多个流体导管中的至少一个流体连通。

9. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

10. 发明授权

US07205233B2 Method for forming CoWRe alloys by electroless deposition 失效
标题翻译：通过无电沉积形成CoWRe合金的方法
公开(公告)号：US07205233B2
公开(公告)日：2007-04-17
申请号：US10703769
申请日：2003-11-07
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Ian A. Pancham
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Ian A. Pancham
IPC分类号： H01L21/28
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/1692 , C23C18/1844 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76858 , H01L21/76874
摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.
摘要翻译：一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re），和磷（P）和硼（B）中的至少一种。在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将盖层

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