专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07311810B2 Two position anneal chamber 有权
标题翻译：二位退火炉
公开(公告)号：US07311810B2
公开(公告)日：2007-12-25
申请号：US10823849
申请日：2004-04-13
申请人： Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25D17/00
CPC分类号： H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/6723 , H01L21/68707
摘要： Embodiments of the invention generally provide an annealing apparatus and method for a semiconductor processing platform. The annealing apparatus includes a plurality of isolated annealing chambers, wherein each of the annealing chambers has a heating plate positioned in a sealed processing volume, a cooling plate positioned in the processing volume, and a substrate transfer mechanism positioned in the processing volume and configured to transfer substrates between the heating plate and the cooling plate. The annealing system further includes a gas supply source selectively in communication with each of the individual annealing chambers.
摘要翻译：本发明的实施例通常提供一种用于半导体处理平台的退火装置和方法。退火装置包括多个隔离退火室，其中每个退火室具有位于密封处理体积中的加热板，位于处理体积中的冷却板和位于处理体积中的基板传送机构，在加热板和冷却板之间传送基板。退火系统还包括选择性地与各个退火室连通的气体供应源。

2. 发明授权

US06869516B2 Method for removing electrolyte from electrical contacts and wafer touching areas 失效
标题翻译：从电触点和晶片接触区域去除电解质的方法
公开(公告)号：US06869516B2
公开(公告)日：2005-03-22
申请号：US10273539
申请日：2002-10-18
申请人： Dmitry Lubomirsky , Michael X. Yang , Girish A. Dixit , Vincent E. Burkhart , Allen L. D'Ambra , Yeuk-Fai Edwin Mok , Harald Herchen
发明人： Dmitry Lubomirsky , Michael X. Yang , Girish A. Dixit , Vincent E. Burkhart , Allen L. D'Ambra , Yeuk-Fai Edwin Mok , Harald Herchen
IPC分类号： C25D7/12 , C25D21/00 , H01L21/288 , C25D5/48
CPC分类号： C25D7/12 , C25D21/00 , H01L21/2885
摘要： A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.
摘要翻译：提供了一种用于清洁电化学电镀接触环的电接触区域或衬底接触区域的方法。该方法的实施例包括将基板定位在具有一个或多个电触点的基板支撑构件上，在基板表面的至少一部分上化学镀覆金属层，从处理基板移除经处理的基板，并清洁该基板或更多的与包含醇的蒸汽混合物的电接触。在另一方面，该方法包括在旋转衬底支撑构件的同时将蒸气混合物喷射到电触点上。

3. 发明授权

US06516815B1 Edge bead removal/spin rinse dry (EBR/SRD) module 失效
标题翻译：边缘珠去除/旋转冲洗干燥（EBR / SRD）模块
公开(公告)号：US06516815B1
公开(公告)日：2003-02-11
申请号：US09350212
申请日：1999-07-09
申请人： Joe Stevens , Donald Olgado , Alex Ko , Yeuk-Fai Edwin Mok
发明人： Joe Stevens , Donald Olgado , Alex Ko , Yeuk-Fai Edwin Mok
IPC分类号： B08B302
CPC分类号： H01L21/6708 , Y10S134/902
摘要： The present invention provides an apparatus for etching a substrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to the substrate support; and a fluid delivery assembly disposed in the container to deliver an etchant to a peripheral portion of a substrate disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck and the fluid delivery assembly comprises one or more nozzles. The invention also provide a method for etching a substrate, comprising: rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.
摘要翻译：本发明提供了一种用于蚀刻基板的设备，包括：容器; 设置在所述容器中的基板支撑件; 附接到基板支撑件的旋转致动器; 以及设置在所述容器中以将蚀刻剂输送到设置在所述基板支撑件上的基板的周边部分的流体输送组件。优选地，衬底支撑件包括真空卡盘，并且流体输送组件包括一个或多个喷嘴。本发明还提供了一种用于蚀刻衬底的方法，包括：旋转位于可旋转衬底支架上的衬底; 以及向衬底的周边部分输送蚀刻剂。优选地，基板在约100rpm和约1000rpm之间旋转，并且蚀刻剂沿着与基板的周边部分基本相切的方向以距离表面大约0度至大约45度的入射角度被输送的底物。

4. 发明授权

US06689418B2 Apparatus for wafer rinse and clean and edge etching 失效
标题翻译：晶圆清洗和边缘蚀刻装置
公开(公告)号：US06689418B2
公开(公告)日：2004-02-10
申请号：US09922130
申请日：2001-08-03
申请人： Donald J. K. Olgado , Avi Tepman , Yeuk-Fai Edwin Mok , Arnold V. Kholodenko
发明人： Donald J. K. Olgado , Avi Tepman , Yeuk-Fai Edwin Mok , Arnold V. Kholodenko
IPC分类号： B05D312
CPC分类号： H01L21/68728 , B08B3/048 , C11D7/08 , C11D7/265 , C11D11/0047 , H01L21/67057
摘要： An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.
摘要翻译：一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。该方法的一个实施例涉及冲洗和清洁具有正面的衬底，集成电路将在其上形成背面。该实施例包括将衬底正面朝下放置到冲洗液池上，使得衬底的前侧与溶液接触，同时衬底被溶液的表面张力保持悬浮，从而防止了衬底的背面从池的上表面下沉。接下来，当衬底在所述漂洗液体中悬浮时，衬底通过其边缘用第一组手指固定，并且在一些实施例中，衬底随后被旋转。在另一实施例中，公开了一种在衬底前侧形成铜层的方法。该方法包括在电镀装置中在基板的正面上电镀铜层，然后将基板从电镀装置转移到冲洗和清洗台。在冲洗和清洁站处，基板被正面向下落到冲洗液池上，使得液体的表面张力将基板保持在悬浮状态，从而防止所述基板的背面沉入池的上表面，并且然后，当衬底悬挂在池中时，其用第一组手指固定。

5. 发明授权

US06466426B1 Method and apparatus for thermal control of a semiconductor substrate 失效
标题翻译：用于半导体衬底的热控制的方法和装置
公开(公告)号：US06466426B1
公开(公告)日：2002-10-15
申请号：US09366155
申请日：1999-08-03
申请人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
发明人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
IPC分类号： H01N1300
CPC分类号： H01L21/68785 , H01L21/67098 , Y10T279/23
摘要： A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.
摘要翻译：更具体地说，一种具有衬底支撑件，隔离器以及用于在半导体晶片的直径上提供可控均匀的温度分布的第一和第二传热板的半导体衬底支撑座。将放置在基座上的半导体晶片通过用嵌入在基板支撑体内的一个或多个电极加热晶片并以流过第一和第二传热板的流体冷却晶片来均匀地保持在预定温度。

6. 发明授权

US06537011B1 Method and apparatus for transferring and supporting a substrate 失效
标题翻译：用于转移和支撑衬底的方法和装置
公开(公告)号：US06537011B1
公开(公告)日：2003-03-25
申请号：US09629322
申请日：2000-07-31
申请人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
发明人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
IPC分类号： B65G4907
CPC分类号： H01L21/68707 , H01L21/68721 , H01L21/68785 , Y10S414/141
摘要： A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.
摘要翻译：一种用于在半导体晶片处理系统中支撑和传送衬底的方法和装置。在一个方面，公开了一种支撑环，其具有安装在其上的一个或多个基板支撑构件并且在处理期间限定用于接收基板支撑构件的中心开口。在另一方面，提供一种其上设置有多个基板支撑件的基板处理器刀片，其适于在其上支撑基板并且实现基板处理器刀片和支撑环之间的基板传送。

7. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

8. 发明授权

US07138014B2 Electroless deposition apparatus 有权
公开(公告)号：US07138014B2
公开(公告)日：2006-11-21
申请号：US10059572
申请日：2002-01-28
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
IPC分类号： C23C14/00 , B05C11/00 , B05C3/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

9. 发明授权

US06824612B2 Electroless plating system 有权
标题翻译：无电镀系统
公开(公告)号：US06824612B2
公开(公告)日：2004-11-30
申请号：US10036321
申请日：2001-12-26
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok , Girish Dixit
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok , Girish Dixit
IPC分类号： B05C502
CPC分类号： H01L21/67167 , C23C18/1632 , C23C18/1692 , H01L21/6723
摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.
摘要翻译：一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个基板传送机器人。还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

10. 发明授权

US06178920B2 Plasma reactor with internal inductive antenna capable of generating helicon wave 失效
标题翻译：具有能够产生螺旋波的内部感应天线的等离子体反应器
公开(公告)号：US06178920B2
公开(公告)日：2001-01-30
申请号：US09336512
申请日：1999-06-18
申请人： Yan Ye , Allan D'Ambra , Yeuk-Fai Edwin Mok , Richard E. Remington , James E. Sammons, III
发明人： Yan Ye , Allan D'Ambra , Yeuk-Fai Edwin Mok , Richard E. Remington , James E. Sammons, III
IPC分类号： C23C1600
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32477
摘要： The present invention employs an internal inductive antenna capable of generating a helicon wave for generating a plasma. One embodiment of the present invention employs loop type antenna secured within a bell shaped portion of the chamber. Another embodiment employs a flat coil type antenna secured within the chamber. In the preferred embodiments, the internal antenna of the present invention is constructed to prevent sputtering of the antenna. The antenna may be formed of a non-sputtering conductive material, or may formed a conductive material surrounded, completely or partially, by a non-sputtering jacket. In one embodiment, the non-sputtering jacket may be coupled to the chamber wall so that heat generated by the antenna is transferred between the jacket and the chamber wall by conduction. Preferably, the non-sputtering jacket is formed of a material that also is electrically insulative with the surface of the antenna exposed to plasma being segmented to inhibit eddy current in conductive deposits. The gaps separate the exposed surface of the antennas so that conductive deposits are inhibited from electrically joining the separated surfaces, while inhibiting plasma generation within the gaps. A portion or all of the chamber wall may be constructed of electrically and thermally conductive material.
摘要翻译：本发明采用能够产生用于产生等离子体的螺旋波的内部感应天线。本发明的一个实施例采用固定在腔室的钟形部分内的环形天线。另一实施例采用固定在腔室内的扁平线圈型天线。在优选实施例中，本发明的内部天线被构造成防止天线的溅射。天线可以由非溅射导电材料形成，或者可以形成由非溅射护套完全或部分地包围的导电材料。在一个实施例中，非溅射护套可以耦合到室壁，使得由天线产生的热量通过传导在护套和腔室壁之间传递。优选地，非溅射护套由与绝缘等离子体的天线表面电绝缘的材料形成，以阻止导电沉积物中的涡流。间隙分开天线的暴露表面，使得阻止导电沉积物电连接分离的表面，同时抑制间隙内的等离子体产生。室壁的一部分或全部可以由导电和导热材料构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式