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1. 发明授权

US07138014B2 Electroless deposition apparatus 有权
公开(公告)号：US07138014B2
公开(公告)日：2006-11-21
申请号：US10059572
申请日：2002-01-28
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
IPC分类号： C23C14/00 , B05C11/00 , B05C3/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

2. 发明申请

US20050263066A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050263066A1
公开(公告)日：2005-12-01
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
IPC分类号： B05D3/10 , C23C18/16 , C23F1/00 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

3. 发明申请

US20070199507A1 APPARATUS TO IMPROVE WAFER TEMPERATURE UNIFORMITY FOR FACE-UP WET PROCESSING 审中-公开
标题翻译：提高湿度湿度加工的温度均匀性的设备
公开(公告)号：US20070199507A1
公开(公告)日：2007-08-30
申请号：US11743413
申请日：2007-05-02
申请人： Ian Pancham , Son Nguyen , Gary Rosen
发明人： Ian Pancham , Son Nguyen , Gary Rosen
IPC分类号： B05C1/00
CPC分类号： H01L21/67109 , C23C18/1628 , C23C18/1678
摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid distribution member and contacts the backside of the substrate, thus heating the substrate. The fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side or processing side of the substrate.
摘要翻译：一种用于在无电沉积工艺期间控制衬底温度的方法和装置。该装置包括沉积单元，该沉积单元构造成在流体分配构件上方的位置处支撑基板。加热的流体从流体分配构件分配并接触基底的背面，从而加热基底。从被配置成在衬底表面上保持恒定温度的孔分配流体。该方法包括使加热的流体通过扩散构件以基板的背面流动的形式，该结构被构造成在衬底的前侧或处理侧产生恒定的处理温度。

4. 发明申请

US20050260345A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050260345A1
公开(公告)日：2005-11-24
申请号：US11175251
申请日：2005-07-06
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham
IPC分类号： B05C11/02 , B05C13/00 , B05D3/12 , C23C18/16 , C23C26/00 , C23C26/02 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1632 , C23C26/00 , C23C26/02 , H01L21/67126 , H01L21/6719 , H01L21/68735 , H01L21/68792
摘要： An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.
摘要翻译：提供无电沉积系统和无电沉积站。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境控制的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站和定位成转移的基板梭第一和第二处理站之间的基板。无电沉积站还包括各种流体输送和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。

5. 发明申请

US20050160990A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050160990A1
公开(公告)日：2005-07-28
申请号：US10996342
申请日：2004-11-22
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , H01L21/687 , C23C16/00 , C23F1/00
CPC分类号： C23C18/1632 , H01L21/288 , H01L21/6715 , H01L21/67167 , H01L21/6719 , H01L21/6723 , H01L21/68742 , H01L21/68771 , H01L21/68792 , Y10S134/902
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。

6. 发明授权

US06824612B2 Electroless plating system 有权
标题翻译：无电镀系统
公开(公告)号：US06824612B2
公开(公告)日：2004-11-30
申请号：US10036321
申请日：2001-12-26
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok , Girish Dixit
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok , Girish Dixit
IPC分类号： B05C502
CPC分类号： H01L21/67167 , C23C18/1632 , C23C18/1692 , H01L21/6723
摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.
摘要翻译：一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个基板传送机器人。还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

7. 发明申请

US20050199489A1 Electroless deposition apparatus 审中-公开
标题翻译：无电沉积装置
公开(公告)号：US20050199489A1
公开(公告)日：2005-09-15
申请号：US11090919
申请日：2005-03-25
申请人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
发明人： Joseph Stevens , Dmitry Lubomirsky , Ian Pancham , Donald Olgado , Howard Grunes , Yeuk-Fai Mok
IPC分类号： C23C18/18 , C23C18/16 , C25D7/12 , H01L21/00 , H01L21/28 , H01L21/288 , C25C7/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

8. 发明申请

US20050181226A1 Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber 审中-公开
公开(公告)号：US20050181226A1
公开(公告)日：2005-08-18
申请号：US11040962
申请日：2005-01-22
申请人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
发明人： Timothy Weidman , Ian Pancham , Dmitry Lubomirsky , Arulkumar Shanmugasundram , Yosef Shacham-Diamand , Farhad Moghadam
IPC分类号： C23C18/16 , C23C18/50 , H01L21/02 , H01L21/288 , H01L21/768 , B05C3/00 , B05D1/18
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results. In another aspect, no rinsing steps are required between the various deposition steps used to form the various layers, since the processing fluids are selected so that they are compatible with each other. In another aspect, throughout the process the conductive surfaces are continually in contact with various chemical components that will inhibit oxidation of the conductive surfaces and/or reduce the oxidized metal surfaces. In one aspect, a multilayer structure can formed on the surface of the conductive surface using the continuous electroless deposition process where the first layer of the multilayer structure has at least two of the following elements cobalt (Co), tungsten (W), phosphorus (P) or boron (B); and a second layer contains at least two of the following elements cobalt (Co), boron (B) or phosphorus (P). Formation of a multilayer structure on the conductive surface may have advantage since each deposited layer can have differing properties which when placed together will form a layer that has improved properties over a single deposited layer.

9. 发明申请

US20050081785A1 Apparatus for electroless deposition 有权
标题翻译：无电沉积装置
公开(公告)号：US20050081785A1
公开(公告)日：2005-04-21
申请号：US10965220
申请日：2004-10-14
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Ian Pancham , Sergey Lopatin
IPC分类号： B05C3/00 , B05C19/02 , C23C18/16 , C23C18/28 , C23F1/00 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
摘要翻译：本发明的实施例通常提供流体处理平台。平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元和主机机器人。

10. 发明申请

US20050072526A1 Heating apparatus to heat wafers using water and plate with turbolators 失效
标题翻译：加热装置用水和板与涡轮机加热晶片
公开(公告)号：US20050072526A1
公开(公告)日：2005-04-07
申请号：US10680359
申请日：2003-10-06
申请人： Son Nguyen , Gary Rosen , Ian Pancham
发明人： Son Nguyen , Gary Rosen , Ian Pancham
IPC分类号： C23C18/16 , H01L21/00 , H01L21/288 , B05D3/04 , C23F1/00
CPC分类号： H01L21/67167 , C23C18/1619 , C23C18/1669 , C23C18/1676 , C23C18/168 , H01L21/288 , H01L21/67109 , H01L21/67248
摘要： Embodiments of the invention provide a fluid processing method and apparatus. The apparatus includes a substrate support assembly positioned in a processing volume, a disk shaped member positioned in the processing volume in parallel orientation with a substrate supported on the substrate support assembly, a fluid outlet positioned in a central location of the disk shaped member, and: a plurality of turbolators positioned on an upper surface of the disk shaped member, the turbolators being configured to generate a uniform turbulent flow of fluid traveling from the fluid outlet to a perimeter of the substrate. The method includes flowing a heated processing fluid over a plurality of turbolators that are positioned under a substrate being processed to control the temperature of the substrate during processing.
摘要翻译：本发明的实施例提供一种流体处理方法和装置。该装置包括位于处理体积中的基板支撑组件，与支撑在基板支撑组件上的基板平行地定位在处理体积中的圆盘形构件，位于盘形构件的中心位置的流体出口，以及：多个涡轮机，其定位在盘形部件的上表面上，所述涡轮机构造成产生从所述流体出口行进到所述基板的周边的均匀的流体流。该方法包括使加热的处理流体流过位于被处理的基底下方的多个涡轮机，以在加工期间控制基板的温度。

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