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1. 发明授权

US10283321B2 Semiconductor processing system and methods using capacitively coupled plasma 有权
公开(公告)号：US10283321B2
公开(公告)日：2019-05-07
申请号：US13251714
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

2. 发明申请

US20160035544A1 WAFER CARRIER WITH INDEPENDENT ISOLATED HEATER ZONES 审中-公开
标题翻译：带独立隔离加热器区域的拖车
公开(公告)号：US20160035544A1
公开(公告)日：2016-02-04
申请号：US14614199
申请日：2015-02-04
申请人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvill
发明人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvill
IPC分类号： H01J37/32 , H01L21/687 , C23C16/52 , H01L21/67 , C23C16/458 , C23C16/46
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.
摘要翻译：用独立的隔离加热器区域描述晶片载体。在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器，冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

3. 发明授权

US09068265B2 Gas distribution plate with discrete protective elements 有权
标题翻译：气体分布板带有离散的保护元件
公开(公告)号：US09068265B2
公开(公告)日：2015-06-30
申请号：US13363342
申请日：2012-01-31
申请人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
发明人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
IPC分类号： B05B5/00 , B05B1/14 , C23C16/509 , C23C16/455 , H01J37/32
CPC分类号： C23C16/5096 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/32091 , H01J37/3244 , H01J37/32559
摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.
摘要翻译：本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

4. 发明授权

US08937800B2 Electrostatic chuck with advanced RF and temperature uniformity 有权
标题翻译：静电卡盘具有先进的射频和温度均匀性
公开(公告)号：US08937800B2
公开(公告)日：2015-01-20
申请号：US13867515
申请日：2013-04-22
申请人： Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, Jr. , Samer Banna
发明人： Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, Jr. , Samer Banna
IPC分类号： H02N13/00 , H01L21/67
CPC分类号： H02N13/00 , H01L21/67103
摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
摘要翻译：描述了具有RF和温度均匀性的静电卡盘（ESCs）。例如，ESC包括顶部电介质层。上部金属部分设置在顶部电介质层的下方。第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。多个通孔设置在第三电介质层中。总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。金属基底设置在第四电介质层的下方。金属基座包括容纳在其中的多个高功率加热器元件。

5. 发明申请

US20130279066A1 ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY 有权
标题翻译：具有高级射频和温度均匀性的静电卡盘
公开(公告)号：US20130279066A1
公开(公告)日：2013-10-24
申请号：US13867515
申请日：2013-04-22
申请人： Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, JR. , Samer Banna
发明人： Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, JR. , Samer Banna
IPC分类号： H02N13/00
CPC分类号： H02N13/00 , H01L21/67103
摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
摘要翻译：描述了具有RF和温度均匀性的静电卡盘（ESCs）。例如，ESC包括顶部电介质层。上部金属部分设置在顶部电介质层的下方。第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。多个通孔设置在第三电介质层中。总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。金属基底设置在第四电介质层的下方。金属基座包括容纳在其中的多个高功率加热器元件。

6. 发明授权

US08357435B2 Flowable dielectric equipment and processes 有权
标题翻译：可流动介质设备和工艺
公开(公告)号：US08357435B2
公开(公告)日：2013-01-22
申请号：US12210982
申请日：2008-09-15
申请人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
发明人： Dmitry Lubomirsky , Qiwei Liang , Jang Gyoo Yang
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45514 , C23C16/509 , H01J37/32449
摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.
摘要翻译：描述了在衬底上沉积和固化电介质材料的方法。该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

7. 发明授权

US08232176B2 Dielectric deposition and etch back processes for bottom up gapfill 有权
标题翻译：介质沉积和回填工艺，用于自下而上的间隙填充
公开(公告)号：US08232176B2
公开(公告)日：2012-07-31
申请号：US11765944
申请日：2007-06-20
申请人： Dmitry Lubomirsky , Srinivas D. Nemani , Ellie Yieh
发明人： Dmitry Lubomirsky , Srinivas D. Nemani , Ellie Yieh
IPC分类号： H01L21/762
CPC分类号： H01L21/76229
摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
摘要翻译：描述了减少电介质层中的膜破裂的方法。所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

8. 发明申请

US20120180954A1 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：US20120180954A1
公开(公告)日：2012-07-19
申请号：US13251663
申请日：2011-10-03
申请人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人： Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号： C23F1/02 , C23C16/458 , C23C16/455 , C23C16/50
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。基座位于气体反应区域的下方，活性气体从CCP单元行进。

9. 发明申请

US20120074126A1 WAFER PROFILE MODIFICATION THROUGH HOT/COLD TEMPERATURE ZONES ON PEDESTAL FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：通过半导体制造设备的底座上的热/冷温区域进行波形配置修改
公开(公告)号：US20120074126A1
公开(公告)日：2012-03-29
申请号：US13072546
申请日：2011-03-25
申请人： Won B. Bang , Tien Fak Tan , Son M. Phi , Dmitry Lubomirsky
发明人： Won B. Bang , Tien Fak Tan , Son M. Phi , Dmitry Lubomirsky
IPC分类号： H05B3/68
CPC分类号： H01L21/68785 , H01L21/67109
摘要： A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface.
摘要翻译：一种衬底支撑件，包括顶部陶瓷板，其提供用于在衬底处理期间支撑衬底的衬底支撑表面，其中形成有冷却剂通道的衬底基座和夹在顶部陶瓷板和衬底基座之间的热电板。热电甲板包括可以加热或冷却基板支撑表面的多个嵌入式热电元件。

10. 发明授权

US08108981B2 Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
公开(公告)号：US08108981B2
公开(公告)日：2012-02-07
申请号：US11888327
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P17/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T29/49117 , Y10T29/49885
摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
摘要翻译：一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。将电介质层抛光至规定的厚度。在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

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