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1. 发明授权

US4756189A Method and apparatus for determining characteristics of clay-bearing formations 失效
公开(公告)号：US4756189A
公开(公告)日：1988-07-12
申请号：US829340
申请日：1986-02-14
申请人： Walter H. Fertl , Ashok K. Sinha
发明人： Walter H. Fertl , Ashok K. Sinha
IPC分类号： E21B49/00 , G01V11/00
CPC分类号： G01V11/00 , E21B49/00
摘要： The volume of clay within clay-bearing formations is determined throughout the formations. This volume of clay is then functionally related to measurements indicative of the formations. Utilizing measured formation characteristics representative of different clay types, such as potassium content or bound water content, the formation porosity measurements are extrapolated to indicate the porosity log measurements which would be yielded if the logging devices were responsive only to the clay within the formations. In addition the cation exchange capacity and the hydrogen index are used to determine volume, types and distribution of clays. These extrapolated measurements are then related to known or determinable formation characteristics to determine additional formation properties such as porosity, permeability, and fluid saturation characteristics.

2. 发明授权

US4953399A Method and apparatus for determining characteristics of clay-bearing formations 失效
标题翻译：确定含粘土地层特征的方法和装置
公开(公告)号：US4953399A
公开(公告)日：1990-09-04
申请号：US353221
申请日：1989-05-16
申请人： Walter H. Fertl , Ashok K. Sinha
发明人： Walter H. Fertl , Ashok K. Sinha
IPC分类号： E21B49/00 , G01V11/00
CPC分类号： E21B49/00 , G01V11/00
摘要： The volume of clay within clay-bearing formations is determined throughout the formations. This volume of clay is then functionally related to measurements indicative of the formations. Utilizing measured formation characteristics representative of different clay types, such as potassium content or bound water content, the formation porosity measurements are extrapolated to indicate the porosity log measurements which would be yielded if the logging devices were responsive only to the clay within the formations. In addition the cation exchange capacity and the hydrogen index are used to determine volume, types and distribution of clays. These extrapolated measurements are then related to known or determinable formation characteristics to determine additional formation properties such as porosity, permeability, and fluid saturation characteristics.
摘要翻译：在整个地层确定含粘土地层中的粘土体积。然后，该体积的粘土在功能上与指示地层的测量有关。利用表示不同粘土类型（例如钾含量或结合水含量）的测量地层特征，外推地层孔隙度测量值，以表示如果测井装置仅对地层内的粘土作出响应，将产生孔隙度测井。此外，阳离子交换容量和氢指数用于确定粘土的体积，类型和分布。然后，这些外推测量与已知或可确定的地层特征相关，以确定附加地层特性，如孔隙度，渗透率和流体饱和度特征。

3. 发明授权

US06890850B2 Method of depositing dielectric materials in damascene applications 失效
标题翻译：在大马士革应用中沉积电介质材料的方法
公开(公告)号：US06890850B2
公开(公告)日：2005-05-10
申请号：US10196498
申请日：2002-07-15
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： C23C16/42 , C23C16/30 , C23C16/40 , C23C16/56 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

4. 发明授权

US06829056B1 Monitoring dimensions of features at different locations in the processing of substrates 失效
标题翻译：监测基板加工中不同位置特征的尺寸
公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译：基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。室控制器接收并评估第一和第二信号，并相对于信号操作室。例如，腔室控制器可以根据信号值选择工艺配方。腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

5. 发明授权

US06258223B1 In-situ electroless copper seed layer enhancement in an electroplating system 有权
标题翻译：电镀系统中的原位无电铜种子层增强
公开(公告)号：US06258223B1
公开(公告)日：2001-07-10
申请号：US09350877
申请日：1999-07-09
申请人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
发明人： Robin Cheung , Daniel A. Carl , Yezdi Dordi , Peter Hey , Ratson Morad , Liang-Yuh Chen , Paul F. Smith , Ashok K. Sinha
IPC分类号： C25D1700
CPC分类号： H01L21/68721 , C25D7/123 , C25D17/001 , H01L21/68728 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.
摘要翻译：本发明公开了一种系统，其提供用电镀方法原位进行的无电沉积，以在电镀过程之前使氧化和其它污染物最小化。该系统允许基板由无电镀沉积工艺转移到具有保护涂层的电镀工艺中以使氧化最小化。该系统通常包括具有主机基板传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理设备，流体连接到该一个或多个处理施加器的无电解供应器，并且可选地包括旋转干燥（SRD）站，快速热退火室和用于控制沉积过程和电化学沉积系统的组件的系统控制器。

6. 发明授权

US06258220B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06258220B1
公开(公告)日：2001-07-10
申请号：US09289074
申请日：1999-04-08
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器工艺和电化学沉积系统的组件。

7. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

8. 发明授权

US4851370A Fabricating a semiconductor device with low defect density oxide 失效
标题翻译：制造具有低缺陷密度氧化物的半导体器件
公开(公告)号：US4851370A
公开(公告)日：1989-07-25
申请号：US138633
申请日：1987-12-28
申请人： Raymond H. Doklan , Edward P. Martin, Jr. , Pradip K. Roy , Scott F. Shive , Ashok K. Sinha
发明人： Raymond H. Doklan , Edward P. Martin, Jr. , Pradip K. Roy , Scott F. Shive , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/02326 , H01L21/02337 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/3144 , H01L21/31662 , H01L29/513 , H01L29/518
摘要： Low defect density oxides suitable for use as thin gate oxides or in charge storage capacitors are described. First and second layers are formed on a substrate with misaligned defect structures. A third layer is then grown by diffusing a species through the first and second layers to the substrate. The species reacts with the substrate. The low defect density results from the misaligned defect structure of the first and second layers. In one embodiment, the first and second layers are grown and deposited oxides, respectively. The third layer is grown by diffusing oxygen through the first two layers and the interface between the first and second layers acts as a sink trapping defects. The oxide silicon interface has desirable characteristics because the oxide grows in near equilibrium conditions.

9. 发明授权

US4276557A Integrated semiconductor circuit structure and method for making it 失效
标题翻译：集成半导体电路结构及其制作方法
公开(公告)号：US4276557A
公开(公告)日：1981-06-30
申请号：US974378
申请日：1978-12-29
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01B1/00 , H01B1/06 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/49 , H01L23/48
CPC分类号： H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L23/53271 , H01L29/4933 , H01L2924/0002 , Y10S148/14
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译：已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。

10. 发明申请

US20080227291A1 FORMATION OF COMPOSITE TUNGSTEN FILMS 有权
标题翻译：形成复合陶瓷薄膜
公开(公告)号：US20080227291A1
公开(公告)日：2008-09-18
申请号：US12128499
申请日：2008-05-28
申请人： KEN K. LAI , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： KEN K. LAI , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

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