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1. 发明申请

US20070095285A1 APPARATUS FOR CYCLICAL DEPOSITING OF THIN FILMS 审中-公开
标题翻译：用于循环沉积薄膜的装置
公开(公告)号：US20070095285A1
公开(公告)日：2007-05-03
申请号：US11612931
申请日：2006-12-19
申请人： Randhir Thakur , Alfred Mak , Ming Xi , Walter Glenn , Ahmad Khan , Ayad Al-Shaikh , Avgerinos Gelatos , Salvador Umotoy
发明人： Randhir Thakur , Alfred Mak , Ming Xi , Walter Glenn , Ahmad Khan , Ayad Al-Shaikh , Avgerinos Gelatos , Salvador Umotoy
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

2. 发明申请

US20060246217A1 Electroless deposition process on a silicide contact 审中-公开
标题翻译：硅化物接触时的无电沉积工艺
公开(公告)号：US20060246217A1
公开(公告)日：2006-11-02
申请号：US11385047
申请日：2006-03-20
申请人： Timothy Weidman , Michael Stewart , Zhize Zhu , Arulkumar Shanmugasundram , Srinivas Gandikota , Avgerinos Gelatos
发明人： Timothy Weidman , Michael Stewart , Zhize Zhu , Arulkumar Shanmugasundram , Srinivas Gandikota , Avgerinos Gelatos
IPC分类号： B28B19/00 , C23C18/34
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
摘要翻译：本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。金属接触材料可以包含钴材料，镍材料或其合金。在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。该方法的实施方案还提供附加层的沉积，例如覆盖层。

3. 发明授权

US06939804B2 Formation of composite tungsten films 有权
公开(公告)号：US06939804B2
公开(公告)日：2005-09-06
申请号：US10299212
申请日：2002-11-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

4. 发明授权

US07605083B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07605083B2
公开(公告)日：2009-10-20
申请号：US12128499
申请日：2008-05-28
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约为15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

5. 发明申请

US20050287807A1 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US20050287807A1
公开(公告)日：2005-12-29
申请号：US11206491
申请日：2005-08-18
申请人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
发明人： Ken Lai , Jeong Byun , Frederick Wu , Ramanujapuran Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok Sinha , Hua Chung , Hongbin Fang , Alfred Mak , Michael Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

6. 发明授权

US5447887A Method for capping copper in semiconductor devices 失效
标题翻译：在半导体器件中封装铜的方法
公开(公告)号：US5447887A
公开(公告)日：1995-09-05
申请号：US222759
申请日：1994-04-01
申请人： Stanley M. Filipiak , Avgerinos Gelatos
发明人： Stanley M. Filipiak , Avgerinos Gelatos
IPC分类号： H01L21/768 , H01L21/44 , H01L21/48
CPC分类号： H01L21/76849 , H01L21/76834 , H01L21/76867 , H01L21/76886
摘要： A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD) process for depositing silicon nitride layer (34). To form layer (32), a semiconductor substrate (12) is provided having a desired copper pattern formed thereon. The copper pattern may include copper interconnects, copper plugs, or other copper members. The substrate is placed into a PECVD reaction chamber. Silane is introduced into the reaction chamber in the absence of a plasma to form a copper silicide layer on any exposed copper surfaces. After a silicide layer of a sufficient thickness (for example, 10 to 100 angstroms) is formed, PECVD silicon nitride is deposited. The copper silicide layer improves adhesion, such that silicon nitride layer is less prone to peeling away from underlying copper members.
摘要翻译：氮化硅层（34）通过引入中间铜硅化物层（32）而具有改进的对底层铜互连构件（30）的粘合性。用等离子体增强化学气相沉积（PECVD）工艺原位形成层（32），用于沉积氮化硅层（34）。为了形成层（32），提供了在其上形成有所需铜图案的半导体衬底（12）。铜图案可以包括铜互连，铜插头或其它铜构件。将基板放入PECVD反应室中。在不存在等离子体的情况下将硅烷引入反应室，以在任何暴露的铜表面上形成硅化铜层。在形成足够厚度（例如10至100埃）的硅化物层之后，沉积PECVD氮化硅。硅化铜层提高粘合性，使得氮化硅层不容易从下面的铜构件剥离。

7. 发明授权

US08927423B2 Methods for annealing a contact metal layer to form a metal silicidation layer 有权
标题翻译：退火接触金属层以形成金属硅化层的方法
公开(公告)号：US08927423B2
公开(公告)日：2015-01-06
申请号：US13714588
申请日：2012-12-14
申请人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
发明人： Xinyu Fu , Wei Tang , Kavita Shah , Srinivas Gandikota , San H. Yu , Avgerinos Gelatos
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L29/401 , H01L21/28052
摘要： Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.
摘要翻译：在本发明中提供了用于退火金属硅化工艺的接触金属层的方法。在一个实施例中，一种用于对半导体器件中的硅化工艺的接触金属层进行退火的方法包括：在热退火处理室中提供其上设置有接触金属层的基板，在该热退火处理室中向该接触金属层提供热能处理室，供给包括氮气和氢气的气体混合物，同时向热处理室中的接触层提供热能，其中氮气和氢气以约1:10和约 1：1，并在衬底上形成金属硅化物层。

8. 发明授权

US07779784B2 Apparatus and method for plasma assisted deposition 有权
标题翻译：用于等离子体辅助沉积的装置和方法
公开(公告)号：US07779784B2
公开(公告)日：2010-08-24
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要翻译：本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。该方法的一个实施方案包括在单个室中执行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

9. 发明授权

US07384867B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07384867B2
公开(公告)日：2008-06-10
申请号：US11206491
申请日：2005-08-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

10. 发明申请

US20060251801A1 In-situ silicidation metallization process 审中-公开
标题翻译：原位硅化金属化工艺
公开(公告)号：US20060251801A1
公开(公告)日：2006-11-09
申请号：US11385484
申请日：2006-03-20
申请人： Timothy Weidman , Srinivas Gandikota , Michael Stewart , Avgerinos Gelatos , Arulkumar Shanmugasundram
发明人： Timothy Weidman , Srinivas Gandikota , Michael Stewart , Avgerinos Gelatos , Arulkumar Shanmugasundram
IPC分类号： B05D5/12
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device. In general the method includes a novel method of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer. The processes discussed below are less complex and less time consuming than other conventional contact level interconnect formation processes and thus will have an improved device yield.
摘要翻译：本发明的实施例提供了一种填充形成在半导体器件中的接触电平特征的简化方法。通常，该方法包括形成包含硅化物界面和钨CVD沉积层的接触电平特征的新方法。下面讨论的方法比其它常规的接触电平互连形成过程更不复杂和更耗时，因此将具有改进的器件产量。

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