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1. 发明授权

US4276557A Integrated semiconductor circuit structure and method for making it 失效
标题翻译：集成半导体电路结构及其制作方法
公开(公告)号：US4276557A
公开(公告)日：1981-06-30
申请号：US974378
申请日：1978-12-29
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01B1/00 , H01B1/06 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L29/49 , H01L23/48
CPC分类号： H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L23/53271 , H01L29/4933 , H01L2924/0002 , Y10S148/14
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译：已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。

2. 再颁专利

USRE32207E Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效
标题翻译：制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：USRE32207E
公开(公告)日：1986-07-15
申请号：US429299
申请日：1982-09-30
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/49
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/32055 , H01L21/76889 , H01L29/4933 , H01L2924/0002
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.

3. 发明授权

US4378628A Cobalt silicide metallization for semiconductor integrated circuits 失效
标题翻译：半导体集成电路用硅化钴金属化
公开(公告)号：US4378628A
公开(公告)日：1983-04-05
申请号：US296914
申请日：1981-08-27
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/336
CPC分类号： H01L29/66575 , H01L21/28097 , H01L21/28518
摘要： In order to form MOSFET structures, a cobalt layer (16) is deposited and sintered, at about 400.degree. C. to 500.degree. C., on a patterned semiconductor wafer having exposed polycrystalline (14) or monocrystalline (11) silicon portions, as well as exposed oxide (15 or 25) portions. The cobalt reacts with exposed surfaces of the silicon portions and forms thereat such compounds as cobalt monosilicide (CoSi) or di-cobalt silicide (C0.sub.2 Si), or a mixture of both. The unreacted cobalt is selectively removed, as by selective etching in a suitable acid bath. A heat treatment at about 700.degree. C. or more, preferably in an oxidizing ambient which contains typically about 2 percent oxygen, converts the cobalt compound(s) into relatively stable cobalt disilicide (CoSi.sub.2). Subsequently, deposition of an in situ doped layer (33) of polycrystalline silicon (polysilicon) on the cobalt disilicide contacting the monocrystalline silicon portions--followed by gettering, deposition of a layer (34) of aluminum, and standard etch-patterning of the aluminum and polysilicon layers--completes the metallization of the desired MOSFET structures on the silicon wafer.
摘要翻译：为了形成MOSFET结构，在具有暴露的多晶（14）或单晶（11）硅部分的图案化半导体晶片上，在约400℃至500℃下沉积并烧结钴层（16），如以及暴露的氧化物（15或25）部分。钴与硅部分的暴露表面反应并在其上形成诸如一硅化钴（CoSi）或二钴硅化物（CO 2 Si）或两者的混合物的化合物。选择性地除去未反应的钴，如通过在合适的酸浴中的选择性蚀刻。约700℃或更高，优选氧化环境中通常含有约2％氧气的热处理将钴化合物转化成相对稳定的二硅化钴（CoSi 2）。随后，将多晶硅（多晶硅）的原位掺杂层（33）沉积在与单晶硅部分接触的二硅化钴上，然后吸杂，沉积铝层（34），并且对铝进行标准蚀刻图案化和多晶硅层 - 完成硅晶片上期望的MOSFET结构的金属化。

4. 发明授权

US4332839A Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效
标题翻译：制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：US4332839A
公开(公告)日：1982-06-01
申请号：US227133
申请日：1981-01-22
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/768 , H01L23/532 , H01L29/49 , H01L21/283
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/76889 , H01L29/4933 , H01L2924/0002 , Y10S148/02 , Y10S148/147
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译：已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。

5. 再颁专利

USRE30244E Radial flow reactor including glow discharge limitting shield 失效
标题翻译：径流反应堆包括辉光放电限制屏蔽
公开(公告)号：USRE30244E
公开(公告)日：1980-04-01
申请号：US946843
申请日：1978-09-28
申请人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
发明人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
IPC分类号： C23C16/509
CPC分类号： C23C16/5096
摘要： An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

6. 发明授权

US4985373A Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures 失效
标题翻译：用于半导体集成电路结构中的两层互连金属化的多重绝缘层
公开(公告)号：US4985373A
公开(公告)日：1991-01-15
申请号：US357647
申请日：1989-05-24
申请人： Hyman J. Levinstein , William D. Powell, Jr. , Ashok K. Sinha
发明人： Hyman J. Levinstein , William D. Powell, Jr. , Ashok K. Sinha
IPC分类号： H01L21/316 , H01L23/532
CPC分类号： H01L21/02129 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31625 , H01L23/5329 , H01L2924/0002
摘要： Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a plasma planarized, deposited silicon dioxide layer and another silicon dioxide layer deposited upon said plasma planarized layer.
摘要翻译：在半导体集成电路结构中的第一和第二级铝金属化之间的绝缘包括沉积在所述等离子体平坦化层上的等离子体平坦化沉积二氧化硅层和另一二氧化硅层。

7. 发明授权

US4171489A Radiation mask structure 失效
标题翻译：辐射面罩结构
公开(公告)号：US4171489A
公开(公告)日：1979-10-16
申请号：US941776
申请日：1978-09-13
申请人： Arthur C. Adams , Cesar D. Capio , Hyman J. Levinstein , Ashok K. Sinha , David N. Wang
发明人： Arthur C. Adams , Cesar D. Capio , Hyman J. Levinstein , Ashok K. Sinha , David N. Wang
IPC分类号： G03F1/22 , G21K5/02 , H01L21/027 , H01L21/30 , G21F3/02
CPC分类号： G03F1/22
摘要： The discovery that boron nitride and boron carbide films can be made in tension allows nondistorting radiation windows or masks to be realized. Both low and high pressure techniques for making the tensile films lead to related mask structures utilizing such films. The resulting structures are sufficiently distortion free to be useful for x-ray lithography.
摘要翻译： {PG，1]发现氮化硼和碳化硼薄膜可以制成张力，可以实现非调质辐射窗口或掩模。用于制造拉伸膜的低压和高压技术都导致利用这种膜的相关掩模结构。所得到的结构具有足够的变形，可用于x射线光刻。

8. 发明授权

US4151007A Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures 失效
标题翻译：用于稳定金属氧化物半导体结构的氢退火工艺
公开(公告)号：US4151007A
公开(公告)日：1979-04-24
申请号：US840620
申请日：1977-10-11
申请人： Hyman J. Levinstein , Ashok K. Sinha
发明人： Hyman J. Levinstein , Ashok K. Sinha
IPC分类号： H01L21/30 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/321 , H01L21/3003 , H01L21/3105 , Y10S148/003 , Y10S148/024 , Y10S148/053 , Y10S148/128
摘要： Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.
摘要翻译：金属氧化物 - 硅（MOS）结构的阈值电压的变化通过在650℃的温度范围内的氢退火步骤的制造过程中包含而被减弱。该退火步骤被设计为在600摄氏度以上的温度下进行的制造工艺的最后一步。

9. 发明授权

US06890850B2 Method of depositing dielectric materials in damascene applications 失效
标题翻译：在大马士革应用中沉积电介质材料的方法
公开(公告)号：US06890850B2
公开(公告)日：2005-05-10
申请号：US10196498
申请日：2002-07-15
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： C23C16/42 , C23C16/30 , C23C16/40 , C23C16/56 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

10. 发明授权

US06829056B1 Monitoring dimensions of features at different locations in the processing of substrates 失效
标题翻译：监测基板加工中不同位置特征的尺寸
公开(公告)号：US06829056B1
公开(公告)日：2004-12-07
申请号：US10646943
申请日：2003-08-21
申请人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
发明人： Michael Barnes , John Holland , Hongqing Shan , Bryan Y. Pu , Mohit Jain , Zhifeng Sui , Michael D. Armacost , Neil E. Hanson , Diana Xiaobing Ma , Ashok K. Sinha , Dan Maydan
IPC分类号： G01B1114
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069
摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.
摘要翻译：基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。提供过程监视器以监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。室控制器接收并评估第一和第二信号，并相对于信号操作室。例如，腔室控制器可以根据信号值选择工艺配方。腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

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