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1. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

2. 发明授权

US06858153B2 Integrated low K dielectrics and etch stops 有权
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06858153B2
公开(公告)日：2005-02-22
申请号：US10011368
申请日：2001-11-05
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , C23F1/00
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

3. 发明授权

US07399388B2 Sequential gas flow oxide deposition technique 失效
标题翻译：顺序气流氧化沉积技术
公开(公告)号：US07399388B2
公开(公告)日：2008-07-15
申请号：US10627228
申请日：2003-07-25
申请人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
发明人： Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham
IPC分类号： C23C14/34 , C23C16/00
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译：一种在基板上沉积石英玻璃绝缘膜的方法。在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

4. 发明授权

US06958112B2 Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation 失效
标题翻译：使用原子氧生成的高纵横比填隙方法和系统
公开(公告)号：US06958112B2
公开(公告)日：2005-10-25
申请号：US10446531
申请日：2003-05-27
申请人： M. Ziaul Karim , Farhad K. Moghadam , Siamak Salimian
发明人： M. Ziaul Karim , Farhad K. Moghadam , Siamak Salimian
IPC分类号： C23C16/04 , C23C16/40 , C23C16/507 , H01L21/316 , H01L21/762 , C23C14/34
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/402 , C23C16/507 , H01L21/02274 , H01L21/31612 , H01L21/76227
摘要： Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
摘要翻译：提供了用于在衬底上的间隙中沉积氧化硅的方法和系统。通过使处理气体流入处理室并形成总离子密度至少为10-11个/ cm 3的等离子体而形成氧化硅。工艺气体包括H 2 O 2，硅源和氧化性气体反应物，并且使用具有同时沉积和溅射组分的工艺来实现沉积到间隙中。通过确保等离子体具有比具有多于一个氧原子的离子的密度更大的具有单个氧原子的离子的密度来降低形成空穴的概率。

5. 发明授权

US06413583B1 Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound 有权
标题翻译：通过有机硅化合物和羟基形成化合物的反应形成液状二氧化硅层
公开(公告)号：US06413583B1
公开(公告)日：2002-07-02
申请号：US09338470
申请日：1999-06-22
申请人： Farhad K. Moghadam , David W. Cheung , Ellie Yieh , Li-Qun Xia , Wai-Fan Yau , Chi-I Lang , Shin-Puu Jeng , Frederic Gaillard , Shankar Venkataraman , Srinivas Nemani
发明人： Farhad K. Moghadam , David W. Cheung , Ellie Yieh , Li-Qun Xia , Wai-Fan Yau , Chi-I Lang , Shin-Puu Jeng , Frederic Gaillard , Shankar Venkataraman , Srinivas Nemani
IPC分类号： C23C1640
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31053 , H01L21/3122 , H01L21/31604 , H01L21/31612 , H01L21/76828 , H01L21/76834
摘要： A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.
摘要翻译：一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残余碳并可用于间隙填充层，预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。羟基化合物可以在从水或有机化合物沉积之前制备。氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

6. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

7. 发明授权

US07227244B2 Integrated low k dielectrics and etch stops 有权
标题翻译：集成的低k电介质和蚀刻停止
公开(公告)号：US07227244B2
公开(公告)日：2007-06-05
申请号：US10924551
申请日：2004-08-24
申请人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L23/58
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

8. 发明授权

US06806207B2 Method of depositing low K films 有权
标题翻译：沉积低K膜的方法
公开(公告)号：US06806207B2
公开(公告)日：2004-10-19
申请号：US10375852
申请日：2003-02-25
申请人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
发明人： Tzu-Fang Huang , Yung-Cheng Lu , Li-Qun Xia , Ellie Yieh , Wai-Fan Yau , David W. Cheung , Ralf B. Willecke , Kuowei Liu , Ju-Hyung Lee , Farhad K. Moghadam , Yeming Jim Ma
IPC分类号： H01L2131
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
摘要翻译：氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

9. 发明授权

US06495470B2 Contact and via fabrication technologies 失效
标题翻译：联系和通过制造技术
公开(公告)号：US06495470B2
公开(公告)日：2002-12-17
申请号：US08580532
申请日：1995-12-29
申请人： S. M. Reza Sadjadi , Mansour Moinpour , Te Hua Lin , Farhad K. Moghadam
发明人： S. M. Reza Sadjadi , Mansour Moinpour , Te Hua Lin , Farhad K. Moghadam
IPC分类号： H01L21461
CPC分类号： H01L21/76804 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.
摘要翻译：一种在半导体衬底上形成两个导电特征之间的接触开口的方法。形成与导电特征相邻的氧化物间隔物。然后在半导体衬底上沉积掺杂的氧化物层。最后，通过导电特征之间的掺杂氧化物层蚀刻接触开口，使得氧化物间隔物暴露在接触开口内。

10. 发明授权

US06340435B1 Integrated low K dielectrics and etch stops 失效
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06340435B1
公开(公告)日：2002-01-22
申请号：US09329012
申请日：1999-06-09
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： C23F100
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

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