专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100123140A1 SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE 审中-公开
标题翻译： SiC基板，基于其的半导体器件及其制造方法
公开(公告)号：US20100123140A1
公开(公告)日：2010-05-20
申请号：US12275067
申请日：2008-11-20
申请人： Victor Lienkong Lou , Kevin Sean Matocha , Aveek Chatterjee , Vinayak Tilak , Stephen Arthur , Zachary Stum
发明人： Victor Lienkong Lou , Kevin Sean Matocha , Aveek Chatterjee , Vinayak Tilak , Stephen Arthur , Zachary Stum
IPC分类号： H01L21/30 , H01L29/24
CPC分类号： H01L21/049
摘要： The present invention generally relates to a method for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, the present invention provides a method for the manufacture of a semiconductor device based upon a silicon carbide substrate and comprising an oxide layer comprising incorporating at least one additive into the atomic structure of the oxide layer. Semiconductor devices, such as MOSFETS, based upon a substrate treated according to the present method are expected to have inversion layer mobilities of at least about 60 cm2/Vs.
摘要翻译：本发明一般涉及一种在基于碳化硅（SiC）衬底的半导体器件中提高反层迁移率和提供低缺陷密度的方法。更具体地说，本发明提供一种制造基于碳化硅衬底的半导体器件的方法，该方法包括将至少一种添加剂结合到氧化物层的原子结构中的氧化物层。预期基于根据本方法处理的衬底的诸如MOSFET的半导体器件具有至少约60cm 2 / Vs的反转层迁移率。

2. 发明申请

US20070000330A1 Pressure sensor 审中-公开
标题翻译：压力传感器
公开(公告)号：US20070000330A1
公开(公告)日：2007-01-04
申请号：US11516237
申请日：2006-09-06
申请人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
发明人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
IPC分类号： G01L7/00
CPC分类号： H01L21/31111
摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.
摘要翻译：提供压力传感器。压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。体积是由衬底表面进一步限定的封闭体积。

3. 发明申请

US20060289386A1 Etchant, method of etching, laminate formed thereby, and device 有权
标题翻译：蚀刻剂，蚀刻方法，由此形成的层压体和装置
公开(公告)号：US20060289386A1
公开(公告)日：2006-12-28
申请号：US11167719
申请日：2005-06-27
申请人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
发明人： Steven Tysoe , Steven LeBoeuf , Mark D'Evelyn , Venkat Venkataramani , Vinayak Tilak , Jeffrey Fortin , Charles Becker , Stephen Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert Wojnarowski , Abasifreke Ebong
IPC分类号： B44C1/22 , C09K13/00 , G01L9/00
CPC分类号： H01L21/31111
摘要： An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
摘要翻译：提供了包括卤化盐的蚀刻剂，例如Cryolite（Na 3 AlF 6）或四氟硼酸钾（KBF 4 N 4）。盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6 N），四氟硼酸钾（KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。提供了包括层压板的电子设备，光学设备或组合设备。

4. 发明申请

US20080006844A1 CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD 有权
标题翻译：晶体组成，波形，器件和相关方法
公开(公告)号：US20080006844A1
公开(公告)日：2008-01-10
申请号：US11621556
申请日：2007-01-09
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00 , C01B21/06 , H01B1/02
CPC分类号： C30B29/406 , C30B7/10 , H01S5/305 , H01S5/32341 , Y10T428/21
摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
摘要翻译：提供了包括镓和氮的结晶组合物。结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

5. 发明申请

US20070096239A1 Semiconductor devices and methods of manufacture 审中-公开
标题翻译：半导体器件及制造方法
公开(公告)号：US20070096239A1
公开(公告)日：2007-05-03
申请号：US11263163
申请日：2005-10-31
申请人： Xian-An Cao , Stephen Arthur
发明人： Xian-An Cao , Stephen Arthur
IPC分类号： H01L31/00
CPC分类号： H01L29/868 , H01L29/1608 , H01L29/2003 , H01L29/66196 , H01L29/66204 , H01L29/872
摘要： A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n− type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. A p+-n junction grid comprising p+ GaN or p+ AlGaN is formed on selective areas of the n− type epitaxial layer. A metal layer is disposed over the p+-n junction grid and forms a Schottky contact. Another metal layer is deposited on one of the substrate and the n+ type epitaxial layer and forms a cathode electrode. A method of fabricating a semiconductor device is provided and includes forming a p+-n junction grid on a drift layer comprising GaN or AlGaN.
摘要翻译：半导体器件包括包含选自由AlN，SiC，GaN，蓝宝石及其组合组成的组的材料的衬底。 n + +型外延层设置在衬底上方并包括GaN或AlGaN。 n型外延层设置在衬底上方并且包括GaN或AlGaN。在n型外延层的选择性区域上形成包括p + +或/或+ AlGaN的p + 金属层设置在p + n + n连接栅格上方并形成肖特基接触。另一金属层沉积在衬底和n +型外延层中的一个上并形成阴极电极。提供了一种制造半导体器件的方法，包括在包括GaN或AlGaN的漂移层上形成p + + n结栅格。

6. 发明申请

US20070235810A1 POWER SEMICONDUCTOR MODULE AND FABRICATION METHOD 有权
标题翻译：功率半导体模块和制造方法
公开(公告)号：US20070235810A1
公开(公告)日：2007-10-11
申请号：US11279011
申请日：2006-04-07
申请人： Eladio Delgado , Richard Beaupre , Stephen Arthur , Ernest Balch , Kevin Durocher , Paul McConnelee , Raymond Fillion
发明人： Eladio Delgado , Richard Beaupre , Stephen Arthur , Ernest Balch , Kevin Durocher , Paul McConnelee , Raymond Fillion
IPC分类号： H01L23/62
CPC分类号： H01L25/50 , H01L23/5389 , H01L24/24 , H01L24/29 , H01L24/82 , H01L24/83 , H01L25/072 , H01L25/16 , H01L2224/04105 , H01L2224/2413 , H01L2224/24137 , H01L2224/2518 , H01L2224/2919 , H01L2224/73267 , H01L2224/82039 , H01L2224/82047 , H01L2224/83192 , H01L2224/83801 , H01L2224/8385 , H01L2224/92144 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15192 , H01L2924/1532 , H01L2924/18162 , H01L2924/00 , H01L2924/01014
摘要： A power semiconductor module includes: an interconnect layer including an electrical conductor patterned on a dielectric layer, the electrical conductor including a power coupling portion having a thickness sufficient to carry power currents and a control coupling portion having a thickness thinner than that of the power coupling portion; and a semiconductor power device physically coupled to the interconnect layer and electrically coupled to the power coupling portion of the electrical conductor.
摘要翻译：功率半导体模块包括：互连层，其包括在电介质层上图案化的电导体，所述电导体包括具有足以承载电力电流的厚度的功率耦合部分和具有比功率耦合的厚度更薄的厚度的控制耦合部分一部分; 以及物理耦合到所述互连层并且电耦合到所述电导体的功率耦合部分的半导体功率器件。

7. 发明申请

US20070139829A1 Micro-electromechanical system based arc-less switching 审中-公开
标题翻译：基于微机电系统的无弧切换
公开(公告)号：US20070139829A1
公开(公告)日：2007-06-21
申请号：US11314336
申请日：2005-12-20
申请人： Stephen Arthur , Kanakasabapathi Subramanian , William Premerlani , John Park , Ajit Achuthan , Wensen Wang , Joshua Wright , Kristina Korosi , Somashekhar Basavaraj
发明人： Stephen Arthur , Kanakasabapathi Subramanian , William Premerlani , John Park , Ajit Achuthan , Wensen Wang , Joshua Wright , Kristina Korosi , Somashekhar Basavaraj
IPC分类号： H02H7/00
CPC分类号： H01H59/0009 , H01H9/541 , H01H2071/008
摘要： A system is presented. The system includes a first micro-electromechanical system switch. Further, the system includes arc suppression circuitry coupled to the first micro-electromechanical system switch, wherein the arc suppression circuitry comprises a balanced diode bridge and is configured to facilitate suppression of an arc formation between contacts of the first micro-electromechanical system switch.
摘要翻译：提出了一个系统。该系统包括第一微机电系统开关。此外，该系统包括耦合到第一微机电系统开关的消弧电路，其中消弧电路包括平衡二极管桥，并且被配置为便于抑制第一微机电系统开关的触点之间的电弧形成。

8. 发明申请

US20070139145A1 Micro-electromechanical system (MEMS) switch arrays 有权
标题翻译：微机电系统（MEMS）开关阵列
公开(公告)号：US20070139145A1
公开(公告)日：2007-06-21
申请号：US11303157
申请日：2005-12-15
申请人： Kanakasabapathi Subramanian , William Premerlani , Ahmed Elasser , Stephen Arthur , Somashekhar Basavaraj
发明人： Kanakasabapathi Subramanian , William Premerlani , Ahmed Elasser , Stephen Arthur , Somashekhar Basavaraj
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H47/004 , H01H2050/049 , H01H2071/008
摘要： A micro-electromechanical system (MEMS) switch array for power switching includes an input node, an output node, and a plurality of MEMS switches, wherein the input node and the output node are independently in electrical communication with a portion of the plurality of MEMS switches, and wherein a failure of any one of the plurality of MEMS switches does not render ineffective another MEMS switch within the MEMS switch array.
摘要翻译：用于功率切换的微机电系统（MEMS）开关阵列包括输入节点，输出节点和多个MEMS开关，其中输入节点和输出节点独立地与多个MEMS的一部分电通信开关，并且其中所述多个MEMS开关中的任一个的故障不会使所述MEMS开关阵列内的另一个MEMS开关无效。

9. 发明申请

US20080008855A1 CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE 有权
标题翻译：晶体组成，波形和半导体结构
公开(公告)号：US20080008855A1
公开(公告)日：2008-01-10
申请号：US11621560
申请日：2007-01-09
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01F1/40 , B32B15/00
CPC分类号： C30B9/00 , C30B29/406 , H01F1/404 , Y10T428/24355
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

10. 发明申请

US20070158785A1 GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING 有权
标题翻译：氮化钠晶体和波形及其制备方法
公开(公告)号：US20070158785A1
公开(公告)日：2007-07-12
申请号：US11559146
申请日：2006-11-13
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L29/20
CPC分类号： C30B29/406 , C30B9/00
摘要： A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.
摘要翻译：公开了一种包括氮化镓的晶体。晶体具有至少一个具有至少一个尺寸大于2.75mm的颗粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式