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1. 发明申请

US20080008855A1 CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE 有权
标题翻译：晶体组成，波形和半导体结构
公开(公告)号：US20080008855A1
公开(公告)日：2008-01-10
申请号：US11621560
申请日：2007-01-09
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01F1/40 , B32B15/00
CPC分类号： C30B9/00 , C30B29/406 , H01F1/404 , Y10T428/24355
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

2. 发明申请

US20070158785A1 GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING 有权
标题翻译：氮化钠晶体和波形及其制备方法
公开(公告)号：US20070158785A1
公开(公告)日：2007-07-12
申请号：US11559146
申请日：2006-11-13
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L29/20
CPC分类号： C30B29/406 , C30B9/00
摘要： A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.
摘要翻译：公开了一种包括氮化镓的晶体。晶体具有至少一个具有至少一个尺寸大于2.75mm的颗粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。

3. 发明申请

US20070040181A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20070040181A1
公开(公告)日：2007-02-22
申请号：US11376575
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , C30B23/00 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
摘要翻译：提供了包括镓和氮的结晶组合物。结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

4. 发明申请

US20070012965A1 Photodetection system and module 审中-公开
标题翻译：光电检测系统和模块
公开(公告)号：US20070012965A1
公开(公告)日：2007-01-18
申请号：US11183363
申请日：2005-07-15
申请人： Peter Sandvik , Dale Brown , William Burdick , James Rose , Donna Sherman , Jonathan Short , Naresh Rao
发明人： Peter Sandvik , Dale Brown , William Burdick , James Rose , Donna Sherman , Jonathan Short , Naresh Rao
IPC分类号： H01L31/0328 , H01L21/00
CPC分类号： H01L31/02162 , H01L25/167 , H01L27/14618 , H01L27/14621 , H01L27/14658 , H01L31/0203 , H01L31/0312 , H01L31/101 , H01L2224/48227 , H04N5/32
摘要： One photodetection system includes a wide bandgap photodetector array which is physically and electrically integrated on a flexible interconnect layer including electrical connections, which is packaged in a manner for being electrically integrated with processing electronics such that the packaging and the processing electronics are configured for obtaining and processing signals detected by the photodetector array, or which includes both the flexible interconnect layer and processing electronics packaging features. Another photodetection system includes a wide bandgap focal plane array module including a photodetector pixel array, scan registers, a substrate supporting the array and the scan registers, and electrical interconnections coupling each pixel to at least two of the scan registers.
摘要翻译：一个光电检测系统包括宽带隙光电检测器阵列，其物理和电学上集成在包括电连接的柔性互连层上，该电连接被封装为与处理电子器件电气集成的方式，使得封装和处理电子器件被配置用于获得和处理由光电检测器阵列检测到的信号，或者包括柔性互连层和处理电子器件封装特征两者。另一光电检测系统包括宽带隙焦平面阵列模块，其包括光电检测器像素阵列，扫描寄存器，支撑阵列的基板和扫描寄存器，以及将每个像素耦合到至少两个扫描寄存器的电互连。

5. 发明申请

US20060169996A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20060169996A1
公开(公告)日：2006-08-03
申请号：US11376640
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： C30B23/00 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

6. 发明申请

US20050082543A1 Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same 有权
标题翻译：基于宽带隙半导体纳米结构的单片发光器件及其制造方法
公开(公告)号：US20050082543A1
公开(公告)日：2005-04-21
申请号：US10686136
申请日：2003-10-15
申请人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
发明人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
IPC分类号： G02B6/122 , H01L27/15 , H01L33/24 , H01S5/183 , H01S5/34
CPC分类号： G02B6/1225 , B82Y20/00 , H01L33/24 , H01S5/1042 , H01S5/183 , H01S5/3412 , H01S5/423
摘要： The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.
摘要翻译：本发明涉及一种用于制造宽带隙材料的低缺陷纳米结构和基于它们的光电子器件（例如发光源和激光器）的方法。本发明利用纳米光刻定义的模板来形成在能量上不利于位错形成的宽带隙材料的纳米结构。特别地，本发明提供了一种制造无磷的单片白光发光二极管和激光二极管的方法，可用于一般照明和其它应用。

7. 发明申请

US20070157703A1 APPARATUS, METHODS, AND SYSTEMS HAVING GAS SENSOR WITH CATALYTIC GATE AND VARIABLE BIAS 审中-公开
公开(公告)号：US20070157703A1
公开(公告)日：2007-07-12
申请号：US11687880
申请日：2007-03-19
申请人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
发明人： Vinayak Tilak , Kevin Matocha , Peter Sandvik
IPC分类号： G01N7/00 , G01N9/00
CPC分类号： G01N27/4141 , Y10T436/218
摘要： According to some embodiments, an electronics based physical gas sensor includes a semiconductor layer, and at least one contact is electrically coupled to the semiconductor layer. A catalytic gate, having a property that changes when the gate is exposed to an analyte, and a variable bias from a voltage source are also provided.

8. 发明申请

US20070144236A1 Sensor Device For Detection of Dissolved Hydrocarbon Gases in Oil Filled High-Voltage Electrical Equipment 失效
标题翻译：用于检测充油高压电气设备中溶解的烃类气体的传感器装置
公开(公告)号：US20070144236A1
公开(公告)日：2007-06-28
申请号：US11683739
申请日：2007-03-08
申请人： Edward Stokes , Peter Sandvik , Vinayak Tilak , Jeffrey Fedison , Elena Babes-Dornea , Renyan Qin , James Rose , Stanton Weaver
发明人： Edward Stokes , Peter Sandvik , Vinayak Tilak , Jeffrey Fedison , Elena Babes-Dornea , Renyan Qin , James Rose , Stanton Weaver
IPC分类号： G01N27/00
CPC分类号： G01N33/2841 , G01N27/4141
摘要： A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.
摘要翻译：一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。所述器件包括半导体衬底，沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。半导体衬底包括GaN，SiC，AlN，InN，AlGaN，InGaN和AlInGaN中的一种。一种用于感测电气设备的充满油的储存器中的气体的方法，包括提供传感器装置，将传感器装置浸入充满油的储存器中，允许从油中排出的气体与一个或多个催化金属栅极 - 电极，当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

9. 发明申请

US20070086915A1 Detection apparatus and associated method 有权
标题翻译：检测装置及相关方法
公开(公告)号：US20070086915A1
公开(公告)日：2007-04-19
申请号：US11480068
申请日：2006-06-30
申请人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
发明人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
IPC分类号： G01N31/22
CPC分类号： G01N33/54366 , G01N21/6428 , G01N21/645 , G01N33/54373 , G01N2021/7786
摘要： An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.
摘要翻译：一种装置包括物品和检测器。该物品包括基底，设置在基底上的刻面结构以及设置在刻面结构上的传感器层。小面结构设置在基板第一表面上并且本身具有表面。小面结构表面具有限定小平面结构表面直径的周缘。传感器层设置在刻面结构表面上。当目标物种足够靠近传感器层时，传感器层可以与目标物种反应或相互作用。传感器层以可检测的方式响应于反应或相互作用。检测器检测到目标物种与传感器层的反应或相互作用的响应。

10. 发明申请

US20050098844A1 Detection system including avalanche photodiode for use in harsh environments 失效
标题翻译：检测系统包括用于恶劣环境的雪崩光电二极管
公开(公告)号：US20050098844A1
公开(公告)日：2005-05-12
申请号：US10994980
申请日：2004-11-19
申请人： Peter Sandvik , Dale Brown , Stephen Arthur , Kevin Matocha , James Kretchmer
发明人： Peter Sandvik , Dale Brown , Stephen Arthur , Kevin Matocha , James Kretchmer
IPC分类号： G01J1/02 , H01J20060101 , H01L31/0232 , H01L31/0248 , H01L31/0304 , H01L31/0312 , H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/107 , H01L31/113 , H01L31/115
CPC分类号： H01L31/02322 , H01L31/02161 , H01L31/03044 , H01L31/0312 , H01L31/035281 , H01L31/107 , H01L31/115
摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.
摘要翻译：本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。本发明的另一方面涉及使用GaN材料制造的APD器件。根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。

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