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1. 发明申请

US20080008855A1 CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE 有权
标题翻译：晶体组成，波形和半导体结构
公开(公告)号：US20080008855A1
公开(公告)日：2008-01-10
申请号：US11621560
申请日：2007-01-09
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01F1/40 , B32B15/00
CPC分类号： C30B9/00 , C30B29/406 , H01F1/404 , Y10T428/24355
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

2. 发明申请

US20070158785A1 GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING 有权
标题翻译：氮化钠晶体和波形及其制备方法
公开(公告)号：US20070158785A1
公开(公告)日：2007-07-12
申请号：US11559146
申请日：2006-11-13
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L29/20
CPC分类号： C30B29/406 , C30B9/00
摘要： A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.
摘要翻译：公开了一种包括氮化镓的晶体。晶体具有至少一个具有至少一个尺寸大于2.75mm的颗粒，位错密度小于约10 -4 cm -2，并且基本上没有倾斜边界。

3. 发明申请

US20070151509A1 Apparatus for making crystalline composition 有权
标题翻译：用于制造结晶组合物的装置
公开(公告)号：US20070151509A1
公开(公告)日：2007-07-05
申请号：US11313442
申请日：2005-12-20
申请人： Dong-Sil Park , Mark D'Evelyn , Myles Peterson , John Leman , Joell Hibshman , Fred Sharifi
发明人： Dong-Sil Park , Mark D'Evelyn , Myles Peterson , John Leman , Joell Hibshman , Fred Sharifi
IPC分类号： C30B11/00
CPC分类号： C01B21/0632 , C01B21/0602 , C01B21/0722 , C01P2004/03 , C01P2006/80 , Y10T117/10
摘要： A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. An apparatus for preparing a metal nitride is provided. The apparatus may include a housing having an interior surface that defines a chamber and an energy source to supply energy to the chamber. A first inlet may be provided to flow a nitrogen-containing gas into the chamber. Raw materials may be introduced into the chamber through a raw material inlet. A second inlet may be provided to flow in a halide-containing gas in the chamber. The apparatus may further include a controller, which communicates with the various components of the apparatus such as, sensors, valves, and energy source, and may optimize and control the reaction.
摘要翻译：提供了包含多个晶粒的多晶金属氮化物的组合物。这些晶粒具有在金属氮化物中具有金属的平均晶粒尺寸，倾斜角，杂质含量，孔隙率，密度和原子分数等一个或多个特性的柱状结构。提供了一种用于制备金属氮化物的设备。该装置可以包括具有限定腔室的内表面和用于向腔室供应能量的能量源的壳体。可以提供第一入口以将含氮气体流入室中。可以通过原料入口将原料引入室中。可以提供第二入口以在室中的含卤化物气体中流动。该装置还可以包括控制器，其与设备的各种部件（例如传感器，阀门和能量源）进行通信，并且可以优化和控制反应。

4. 发明申请

US20070040181A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20070040181A1
公开(公告)日：2007-02-22
申请号：US11376575
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , C30B23/00 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
摘要翻译：提供了包括镓和氮的结晶组合物。结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

5. 发明申请

US20060177362A1 Apparatus for processing materials in supercritical fluids and methods thereof 有权
标题翻译：超临界流体中处理材料的设备及其方法
公开(公告)号：US20060177362A1
公开(公告)日：2006-08-10
申请号：US11042858
申请日：2005-01-25
申请人： Mark D'Evelyn , Robert Giddings , Fred Sharifi , Subhrajit Dey , Huicong Hong , Joseph Kapp , Ashok Khare
发明人： Mark D'Evelyn , Robert Giddings , Fred Sharifi , Subhrajit Dey , Huicong Hong , Joseph Kapp , Ashok Khare
IPC分类号： B01D9/00
CPC分类号： B01J3/008 , B01J3/002 , B01J3/03 , B01J3/046 , B01J3/06 , B01J2203/0665 , B01J2203/068 , B01J2219/00135 , B01J2219/00155 , B01J2219/00162 , Y02P20/544 , Y10T117/10 , Y10T117/1024 , Y10T117/1092
摘要： An apparatus and method for processing materials in supercritical fluids is disclosed. The apparatus includes a capsule configured to contain a supercritical fluid, a high strength enclosure disposed about the capsule and a sensor configured to sense pressure difference between an interior and an exterior of the capsule. The apparatus also includes a pressure control device configured to adjust pressure difference of the capsule in response to the pressure difference sensed by the sensor. The apparatus further includes at least one dividing structure disposed within the capsule that divides the capsule into a seed growing chamber and a nutrient chamber.
摘要翻译：公开了一种在超临界流体中处理材料的装置和方法。所述装置包括：胶囊，其被配置为容纳超临界流体，围绕所述胶囊设置的高强度外壳;以及被配置为感测所述胶囊的内部和外部之间的压力差的传感器。该装置还包括压力控制装置，该压力控制装置被配置为响应于由传感器感测到的压差而调节胶囊的压力差。该装置还包括设置在胶囊内的至少一个分割结构，其将胶囊分成种子生长室和营养室。

6. 发明申请

US20060169996A1 Crystalline composition, wafer, and semi-conductor structure 审中-公开
标题翻译：晶体组成，晶圆和半导体结构
公开(公告)号：US20060169996A1
公开(公告)日：2006-08-03
申请号：US11376640
申请日：2006-03-15
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00
CPC分类号： C30B23/00 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B7/00 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L31/0304 , H01L31/03042 , H01L31/184 , H01L33/32 , H01S5/3402 , Y02E10/544
摘要： A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
摘要翻译：提供了结晶组合物。结晶组合物可包括镓和氮; 并且结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。

7. 发明申请

US20050087753A1 Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates 有权
标题翻译：在单晶氮化镓衬底上制造的III族氮化物基谐振腔发光器件
公开(公告)号：US20050087753A1
公开(公告)日：2005-04-28
申请号：US10693803
申请日：2003-10-24
申请人： Mark D'Evelyn , Xian-An Cao , Anping Zhang , Steven LeBoeuf , Huicong Hong , Dong-Sil Park , Kristi Narang
发明人： Mark D'Evelyn , Xian-An Cao , Anping Zhang , Steven LeBoeuf , Huicong Hong , Dong-Sil Park , Kristi Narang
IPC分类号： C30B9/00 , H01L33/00 , H01L33/10 , H01L21/00
CPC分类号： H01L33/105 , C30B9/00 , C30B29/403 , C30B29/406 , H01L33/007 , Y10T117/1064
摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106′). Said growing includes applying a temporally varying thermal gradient (100, 100′, 102, 102′) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106′), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).
摘要翻译：在制造谐振腔发光器件的方法中，将氮化镓晶体（14）和源极材料（30）布置在设置在密封容器（10）中的含氮过热流体（44）中，多区炉（50）。在氮化镓晶体（14）上生长氮化镓材料以制造单晶氮化镓衬底（106,106'）。所述生长包括在种子氮化镓晶体（14）和源材料（30）之间施加时间上不同的热梯度（100,100'，102,102'），以在至少一部分生长期间产生增加的生长速率。一组III族氮化物层（112）沉积在单晶氮化镓衬底（106,106'）上，其包括第一反射镜子层（116）和适于制造成一体的有源区（120）或更多的谐振腔发光器件（108,150,160,170,180）。

8. 发明申请

US20050082543A1 Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same 有权
标题翻译：基于宽带隙半导体纳米结构的单片发光器件及其制造方法
公开(公告)号：US20050082543A1
公开(公告)日：2005-04-21
申请号：US10686136
申请日：2003-10-15
申请人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
发明人： Azar Alizadeh , Pradeep Sharma , Steven LeBoeuf , Suryaprakash Ganti , Mark D'Evelyn , Kenneth Conway , Peter Sandvik , Loucas Tsakalakos
IPC分类号： G02B6/122 , H01L27/15 , H01L33/24 , H01S5/183 , H01S5/34
CPC分类号： G02B6/1225 , B82Y20/00 , H01L33/24 , H01S5/1042 , H01S5/183 , H01S5/3412 , H01S5/423
摘要： The present invention is directed toward a method for fabricating low-defect nanostructures of wide bandgap materials and to optoelectronic devices, such as light emitting sources and lasers, based on them. The invention utilizes nanolithographically-defined templates to form nanostructures of wide bandgap materials that are energetically unfavorable for dislocation formation. In particular, this invention provides a method for the fabrication of phosphor-less monolithic white light emitting diodes and laser diodes that can be used for general illumination and other applications.
摘要翻译：本发明涉及一种用于制造宽带隙材料的低缺陷纳米结构和基于它们的光电子器件（例如发光源和激光器）的方法。本发明利用纳米光刻定义的模板来形成在能量上不利于位错形成的宽带隙材料的纳米结构。特别地，本发明提供了一种制造无磷的单片白光发光二极管和激光二极管的方法，可用于一般照明和其它应用。

9. 发明申请

US20050029537A1 Homoepitaxial gallium nitride based photodetector and method of producing 有权
标题翻译：同质外延氮化镓基光电探测器及其制造方法
公开(公告)号：US20050029537A1
公开(公告)日：2005-02-10
申请号：US10932127
申请日：2004-09-01
申请人： Mark D'Evelyn , Nicole Evers , Kanin Chu
发明人： Mark D'Evelyn , Nicole Evers , Kanin Chu
IPC分类号： H01L31/0224 , H01L31/0304 , H01L31/108 , H01L33/00
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要： A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-w PzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector (100, 200, 300) is also disclosed.
摘要翻译：包括氮化镓衬底，设置在衬底（102,202,306）上的至少一个有源层（104,302）的光电探测器（100,200,300）和固定在衬底上的导电接触结构（106,210,308）到有源层（104,302），并且在一些实施例中为衬底（102,202,306）。本发明包括具有金属 - 半导体 - 金属结构，P-i-N结构和肖特基势垒结构的光电探测器（100,200,300）。有源层（104,302）可以包括Ga1-x-yAlxInyN1-z-wPzAsw，或者优选地，Ga1-xAlxN。氮化镓衬底包括单晶氮化镓晶片，并且具有小于约10 -5 cm -2的位错密度。还公开了制造光电检测器（100,200,300）的方法。

10. 发明申请

US20070000330A1 Pressure sensor 审中-公开
标题翻译：压力传感器
公开(公告)号：US20070000330A1
公开(公告)日：2007-01-04
申请号：US11516237
申请日：2006-09-06
申请人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
发明人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
IPC分类号： G01L7/00
CPC分类号： H01L21/31111
摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.
摘要翻译：提供压力传感器。压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。体积是由衬底表面进一步限定的封闭体积。

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