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1. 发明授权

US06669538B2 Pad cleaning for a CMP system 失效
标题翻译： CMP系统的垫清洁
公开(公告)号：US06669538B2
公开(公告)日：2003-12-30
申请号：US09512745
申请日：2000-02-24
申请人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
发明人： Shijian Li , Ramin Emami , Sen-Hou Ko , Shi-Ping Wang , Fred C. Redeker , Lizhong Sun , Stan Tsai
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.
摘要翻译：本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

2. 发明授权

US07220322B1 Cu CMP polishing pad cleaning 失效
标题翻译： Cu CMP抛光垫清洗
公开(公告)号：US07220322B1
公开(公告)日：2007-05-22
申请号：US09645690
申请日：2000-08-24
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： B08B7/04 , H01L21/302
CPC分类号： B24B53/017
摘要： A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
摘要翻译：在平坦化晶片之后，将抛光垫清除为Cu CMP副产物，通过向抛光垫表面施加包含约0.1至约3.0重量％的组合物的组合物来减少垫玻璃。％的至少一种具有一个或多个胺或酰胺基团的有机化合物，酸或碱的量足以将组合物的pH调节至约5.0至约12.0，其余为水。实施例包括通过以约100至约600ml / min的流速施加pH为约5.0至约12.0的溶液来旋转抛光垫的原位清洁。在研磨具有含Cu表面的晶片之后约3至约20秒，然后通过用水高压冲洗从抛光垫除去清洁溶液。

3. 发明授权

US06858540B2 Selective removal of tantalum-containing barrier layer during metal CMP 失效
标题翻译：在金属CMP期间选择性去除含钽阻挡层
公开(公告)号：US06858540B2
公开(公告)日：2005-02-22
申请号：US10215521
申请日：2002-08-08
申请人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Stan Tsai , Shijian Li , Fred C. Redeker
IPC分类号： B24B1/00 , C09K13/00 , C11D1/00 , H01L21/285 , H01L21/302 , H01L21/321 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/28568 , H01L21/7684
摘要： A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid in a dielectric layer and including a Ta-containing metal diffusion barrier layer, comprises applying an aqueous liquid composition to the workpiece surface during CMP or to the polishing pad utilized for performing the CMP, the composition comprising at least one reducing agent for reducing transition metal ions to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor, and water, and optionally includes ions of at least one transition metal, e.g., Cu and Fe ions. According to another embodiment, the aqueous liquid composition contains Ag ions and the at least one reducing agent is omitted.
摘要翻译：一种用于进行化学机械抛光/平面化的方法，其提供从工件表面高度选择性地快速去除含Ta阻挡层，例如包括嵌入在介电层中的镶嵌型Cu基金属化图案的半导体晶片并且包括含Ta的金属扩散阻挡层，包括在CMP期间将水性液体组合物施加到工件表面或用于执行CMP的抛光垫，所述组合物包含至少一种还原剂以将过渡金属离子还原成低级价态，至少一种pH调节剂，至少一种金属腐蚀抑制剂和水，并且任选地包括至少一种过渡金属（例如Cu和Fe离子）的离子。根据另一个实施方案，含水液体组合物含有Ag离子，并且省略了至少一种还原剂。

4. 发明授权

US06509269B2 Elimination of pad glazing for Al CMP 失效
标题翻译：消除Al CMP的衬垫玻璃
公开(公告)号：US06509269B2
公开(公告)日：2003-01-21
申请号：US09421452
申请日：1999-10-19
申请人： Lizhong Sun , Shijian Li , Fred C. Redeker
发明人： Lizhong Sun , Shijian Li , Fred C. Redeker
IPC分类号： H01L21302
CPC分类号： B24B37/0056 , B24B37/044 , B24B53/017 , H01L21/3212
摘要： Polishing pad glazing during CMP of Al and Al alloys is eliminated or substantially reduced by utilizing a neutral polishing slurry containing a sufficient amount of a surfactant to prevent agglomeration of the abrasive particles with polishing by-products. Embodiments include CMP an Al or an Al alloy surface employing a slurry containing abrasive Al203 particles and about 0.02 to about 5 wt. % of a surfactant to prevent Al203 abrasive slurry particles from agglomerating with Al(OH)3 polishing by-products. Embodiments further include subsequent ex situ pad conditioning using an acid or base to dissolve, or a complexing agent to remove, Al(OH)3 polishing by-products.
摘要翻译：通过利用含有足够量的表面活性剂的中性抛光浆料来消除或大大减少Al和Al合金的CMP期间的抛光垫玻璃，以防止磨料颗粒与抛光副产物团聚。实施方案包括使用含有磨料Al 2 O 3颗粒和约0.02至约5重量％的浆料的CMP或Al合金表面。％的表面活性剂，以防止Al2O3磨料浆料颗粒与Al（OH）3抛光副产物附聚。实施例还包括使用酸或碱溶解的随后的非原位垫调节剂或用于去除Al（OH）3抛光副产物的络合剂。

5. 发明授权

US06739951B2 Method and apparatus for electrochemical-mechanical planarization 失效
标题翻译：电化学机械平面化方法和装置
公开(公告)号：US06739951B2
公开(公告)日：2004-05-25
申请号：US10097496
申请日：2002-03-14
申请人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
发明人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/042
摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.
摘要翻译：一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解导电的，研磨的或非研磨的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。还公开了用于执行EMP的装置。

6. 发明授权

US06379223B1 Method and apparatus for electrochemical-mechanical planarization 失效
标题翻译：电化学机械平面化方法和装置
公开(公告)号：US06379223B1
公开(公告)日：2002-04-30
申请号：US09450937
申请日：1999-11-29
申请人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
发明人： Lizhong Sun , Stan D. Tsai , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： H01L21/32125 , B23H5/08 , B24B37/042
摘要： A method for performing electrochemical-mechanical planarization (EMP) of a workpiece surface including a pattern of electrical conductors comprises supplying a chemical-mechanical polishing (CMP)-type apparatus having an abrasive or non-abrasive polishing pad with an oxidizer-free, electrolytically conductive, abrasive or non-abrasive fluid and applying a time-varying anodic potential to the workpiece surface for controllably dissolving the material, e.g., metal, of the electrical conductors while simultaneously applying mechanical polishing action to the surface. The method advantageously reduces or substantially eliminates undesirable dishing characteristic of conventional CMP planarization processing utilizing chemical oxidizer agent(s). Apparatus for performing EMP are also disclosed.
摘要翻译：一种用于执行包括电导体图案的工件表面的电化学 - 机械平面化（EMP）的方法包括：将具有磨料或非研磨性抛光垫的化学机械抛光（CMP）型设备供给无氧化剂，电解导电的，研磨的或非磨蚀的流体，并且将时变的阳极电位施加到工件表面，以可控制地溶解电导体的材料，例如金属，同时对表面施加机械抛光作用。该方法有利地减少或基本消除利用化学氧化剂的常规CMP平坦化处理的不期望的凹陷特性。还公开了用于执行EMP的装置。

7. 发明申请

US20060166487A1 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US20060166487A1
公开(公告)日：2006-07-27
申请号：US11393999
申请日：2006-03-30
申请人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
发明人： Stan Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Liu , Rashid Mavliev , Ratson Morad , Daniel Carl
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

8. 发明授权

US07060606B2 Method and apparatus for chemical mechanical polishing of semiconductor substrates 失效
公开(公告)号：US07060606B2
公开(公告)日：2006-06-13
申请号：US10972191
申请日：2004-10-22
申请人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
发明人： Stan D. Tsai , Liang-Yuh Chen , Lizhong Sun , Shijian Li , Feng Q. Liu , Rashid Mavliev , Ratson Morad , Daniel A. Carl
IPC分类号： H01L21/4763
CPC分类号： H01L21/7684 , B24B37/042 , B24B49/16 , H01L21/3212 , Y02P80/30
摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

9. 发明授权

US06653242B1 Solution to metal re-deposition during substrate planarization 失效
标题翻译：在衬底平面化期间金属再沉积的解决方案
公开(公告)号：US06653242B1
公开(公告)日：2003-11-25
申请号：US09608078
申请日：2000-06-30
申请人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
发明人： Lizhong Sun , Stan D Tsai , Shijian Li , John M White
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , C09G1/04
摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.
摘要翻译：一种用于平坦化衬底的方法和组合物。组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

10. 发明授权

US06592742B2 Electrochemically assisted chemical polish 失效
公开(公告)号：US06592742B2
公开(公告)日：2003-07-15
申请号：US09905315
申请日：2001-07-13
申请人： Lizhong Sun , Shijian Li
发明人： Lizhong Sun , Shijian Li
IPC分类号： B23H300
CPC分类号： B24B37/24 , B23H3/00 , B23H5/08 , C25F3/16 , C25F7/00
摘要： A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing solution covers the surface of the substrate such that only topographic portions of the substrate surface are exposed to the chemical polishing solution. Thereafter, an electrical potential applied to the substrate removes topographic portions of the substrate that are exposed to the polishing solution.

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