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1. 发明授权

US4285007A Color solid-state imager and method of making the same 失效
标题翻译：彩色固态成像仪及其制作方法
公开(公告)号：US4285007A
公开(公告)日：1981-08-18
申请号：US123085
申请日：1980-02-20
申请人： Toshio Nakano , Tadao Kaneko , Michiaki Hashimoto , Yoshio Hatano , Haruo Matsumaru , Akira Sasano , Eiichi Maruyama
发明人： Toshio Nakano , Tadao Kaneko , Michiaki Hashimoto , Yoshio Hatano , Haruo Matsumaru , Akira Sasano , Eiichi Maruyama
IPC分类号： G02B5/20 , H01L27/14 , H01L27/146 , H04N9/04
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14621
摘要： A color solid-state imager comprises a semiconductor body over which are successively laminated a predetermined number of filter layers of any desired shape having predetermined spectral characteristics and, laminated on the filter layers, a predetermined number of layers composed of a transparent, organic high molecular material which is sensitive to radiation, the semiconductor substrate having at least a detector portion composed of an array of a plurality of optical detector elements. The method of making color solid-state imagers can be simplified by at least using the radiation-sensitive high molecular material for the intermediate layers or protection layers which are used for forming a laminate construction of color-decomposing filters.Further, in mounting the color-decomposing filters on the semiconductor substrate, it is particularly preferred to form beforehand a film of an organic high molecular material.
摘要翻译：彩色固态成像器包括半导体本体，其上依次层叠具有预定光谱特性的任意所需形状的预定数量的滤光层，并且层叠在滤光层上，预定数量的层由透明的有机高分子对辐射敏感的材料，所述半导体衬底至少具有由多个光学检测器元件的阵列组成的检测器部分。通过至少使用辐射敏感的高分子材料用于形成分色滤光片的层叠结构的中间层或保护层，可以简化制备彩色固态成像器的方法。此外，在将分色滤光片安装在半导体基板上时，特别优选预先形成有机高分子材料的膜。

2. 发明授权

US4273812A Method of producing material patterns by evaporating material through a perforated mask having a reinforcing bridge 失效
标题翻译：通过具有加强桥的穿孔掩模蒸发材料来生产材料图案的方法
公开(公告)号：US4273812A
公开(公告)日：1981-06-16
申请号：US8587
申请日：1979-02-01
申请人： Ken Tsutsui , Akira Sasano , Toshio Nakano , Haruo Matsumaru , Eiichi Maruyama
发明人： Ken Tsutsui , Akira Sasano , Toshio Nakano , Haruo Matsumaru , Eiichi Maruyama
IPC分类号： C23C14/04 , H05K3/14 , H05K3/10 , C23C13/00 , C23C13/02
CPC分类号： H05K3/143 , C23C14/042
摘要： A method of producing material patterns in which at least one substrate is fixed together with a mask to a substrate holder, and an evaporated film of desired substances is formed on the surface of the substrate by means of evaporation sources provided to confront the substrate. The mask is fabricated to have a plurality of reinforcing bridges formed in the desired portions of the mask openings of desired shape formed in the mask. The mask is held spaced from the substrate by a small distance during the evaporation, so that the evaporation may be effected at least through two pattern openings defined at both sides of each bridge. The evaporation is performed by means of evaporation sources which are located such that the line interconnecting one of the edges of each bridge and the evaporation source located at the same side with respect to the substantial bridging direction of the bridge and another line interconnecting the other edge of the bridge and the evaporation source located at the same side as the other edge intersect each other at a point on the surface of the substrate or in the clearance between the substrate surface and the mask. This method makes it possible to produce patterns which could never be produced by the conventional evaporation method.
摘要翻译：一种生产材料图案的方法，其中至少一个基板与掩模一起固定到基板保持器上，并且通过设置成面对基板的蒸发源在基板的表面上形成所需物质的蒸发膜。掩模被制造成具有形成在形成在掩模中的所需形状的掩模开口的所需部分中的多个加强桥。掩模在蒸发期间与衬底间隔开一小段距离，使得蒸发可以至少通过限定在每个桥的两侧的两个图案开口进行。通过蒸发源进行蒸发，所述蒸发源被定位成使得相对于桥的基本桥接方向互连每个桥的边缘之一的线和位于同一侧的蒸发源的线，另一条线与另一边相互连接和位于与另一边缘相同侧的蒸发源在基板的表面上的点处或基板表面与掩模之间的间隙中彼此相交。这种方法使得可以产生由常规蒸发方法所不能产生的图案。

3. 发明授权

US4331506A Method of manufacturing target of image pickup tube 失效
标题翻译：摄像管目标的制造方法
公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J31/46 , H01J31/26
CPC分类号： H01J31/46 , H01J9/233
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译：一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。本发明提供了一种很好的批量生产方法。

4. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

5. 发明授权

US4360821A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4360821A
公开(公告)日：1982-11-23
申请号：US66230
申请日：1979-08-13
申请人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
发明人： Toshihisa Tsukada , Eiichi Maruyama , Toru Baji , Saburo Ataka , Yoshinori Imamura , Akira Sasano , Masaharu Kubo , Norio Koike , Shusaku Nagahara
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.
摘要翻译：在具有多个感光部分的固态成像装置和至少包括用于扫描感光部分的扫描装置的半导体衬底上，感光部分包括覆盖在半导体衬底上的感光材料层和覆盖着透明导电膜的透明导电膜感光材料层; 一种固态成像装置，其特征在于感光材料是不可缺少的成分是硅并且含有氢的无定形材料。感光材料的氢含量优选为5原子％至30原子％，特别是10原子％至25原子％。

6. 发明授权

US4405879A Photoelectric conversion device and method of producing the same 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US4405879A
公开(公告)日：1983-09-20
申请号：US246588
申请日：1981-03-23
申请人： Saburo Ataka , Yoshinori Imamura , Yasuo Tanaka , Hirokazu Matsubara , Eiichi Maruyama
发明人： Saburo Ataka , Yoshinori Imamura , Yasuo Tanaka , Hirokazu Matsubara , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J29/45 , B05D1/36 , H01J31/38
CPC分类号： H01J29/456 , H01J9/233
摘要： There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.
摘要翻译：公开了一种包括透明基板的光电转换装置; 形成在所述基板上的透明导电膜; 由氢化非晶硅作为不可缺少的成分形成并沉积在所述透明导电膜上的光电导层; 以及形成在所述光电导层上的硫属玻璃膜，其中所述硫属玻璃膜至少包含在保持在1.5×10 -2至1.5×10 -1乇的惰性气体气氛中形成的至少一种硫族化合物玻璃层。作为硫属玻璃，优选使用Sb2S3，As2S3，As2Se3或Sb2Se3。硫属玻璃膜可以是由多个成分层构成的复合膜。本发明对于降低图像拾取管中的暗电流并且防止图像拾取管中的图像反转非常有用。

7. 发明授权

US4351856A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4351856A
公开(公告)日：1982-09-28
申请号：US170185
申请日：1980-07-18
申请人： Makoto Matsui , Yasuhiro Shiraki , Yoshifumi Katayama , Toshihisa Tsukada , Eiichi Maruyama
发明人： Makoto Matsui , Yasuhiro Shiraki , Yoshifumi Katayama , Toshihisa Tsukada , Eiichi Maruyama
IPC分类号： G09G3/36 , H01L21/203 , H01L21/336 , H01L27/12 , H01L27/146 , H01L29/04 , H01L29/78 , H01L29/786 , B05D3/06 , B05D5/12 , B32B17/06
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/02631 , H01L21/02639 , H01L27/12 , H01L27/14643 , H01L27/14665 , H01L29/04 , H01L29/78675 , Y10S148/169 , Y10S438/909
摘要： A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.
摘要翻译：公开了一种半导体器件，其中主要成分为硅的多晶膜形成在非晶或多晶衬底上，所述多晶膜的载流子迁移率为至少1cm 2 / Vxsec，并且其中至少一个有源器件通过使用多晶膜作为其材料。可以提供大面积或细长的有源装置。用于这种半导体器件的多晶膜通过一种方法形成，其中非晶或多晶衬底安装在真空室中，其中主要成分为硅的多晶膜在蒸发过程中的压力低于条件下在衬底上蒸发 1×10 -8乇，蒸发时的氧分压低于1×10 -9乇。

8. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

9. 发明授权

US4433202A Thin film solar cell 失效
标题翻译：薄膜太阳能电池
公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译：一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。

10. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

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