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1. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

2. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

3. 发明授权

US4249106A Radiation sensitive screen 失效
标题翻译：辐射敏感屏
公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H01J9/233 , H01J29/39 , H01J29/45
CPC分类号： H01J29/39 , H01J29/45 , H01J9/233
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译：一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

4. 发明授权

US4255686A Storage type photosensor containing silicon and hydrogen 失效
标题翻译：含硅和氢的存储型光电传感器
公开(公告)号：US4255686A
公开(公告)日：1981-03-10
申请号：US39580
申请日：1979-05-16
申请人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
发明人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
IPC分类号： H01J29/45 , H01L31/0248 , H01J31/38
CPC分类号： H01J29/45
摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.
摘要翻译：在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

5. 发明授权

US4429325A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4429325A
公开(公告)日：1984-01-31
申请号：US206780
申请日：1980-11-14
申请人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
发明人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
IPC分类号： H01L27/146 , H01L31/0264 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14665
摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.
摘要翻译：在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层，光电转换层。通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。暗电流被抑制，光响应良好。作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

6. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

7. 发明授权

US4233506A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4233506A
公开(公告)日：1980-11-11
申请号：US903161
申请日：1978-05-05
申请人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： G02B6/42 , G02B27/00 , G02B27/02 , G06K9/20 , H01L27/144 , H04N1/028 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要翻译：一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

8. 发明授权

US4556817A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US4556817A
公开(公告)日：1985-12-03
申请号：US547962
申请日：1983-11-02
申请人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
发明人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/02 , H01J31/26
CPC分类号： H01J29/456 , H01J29/45
摘要： An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.
摘要翻译：一种具有目标的高速电子束扫描和负电荷系统的图像拾取管，在透明基板上至少包括透明导电膜，光电导层，用于发射二次电子的层和条形电极。透明基板可以由非晶硅制成。

9. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

10. 发明授权

US4307319A Semiconductor layer of oxygen depletion type cerium oxide or lead oxide 失效
标题翻译：半导体层的氧耗尽型氧化铈或氧化铅
公开(公告)号：US4307319A
公开(公告)日：1981-12-22
申请号：US921948
申请日：1978-07-05
申请人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
发明人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/451
摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要翻译：光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

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