专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6114762A Atomic wire and atomic wire switch 失效
标题翻译：原子线和原子线开关
公开(公告)号：US6114762A
公开(公告)日：2000-09-05
申请号：US915730
申请日：1997-08-21
申请人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
发明人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
IPC分类号： H01L21/3205 , H01L21/20 , H01L29/06 , H01L29/66 , H01L29/80 , H01L49/00 , H01L23/48
CPC分类号： H01L49/006 , Y10S438/962 , Y10S977/936
摘要： A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules at the surface of a substrate made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.
摘要翻译：通过将金属原子提供给一行或多行，通过将通过用原子或分子终止其表面上的所有悬挂键而将通过提取不导电的衬底的表面上的封端的原子或分子提取而形成细线。细线的导电性可以通过提供数量更多的金属原子与通过提取封端的原子或分子形成的悬挂键刚刚终止所需的金属原子来实现。

2. 发明授权

US4967141A Method of taking out and storing energy in a superconductive ring or coil 失效
标题翻译：在超导环或线圈中取出和储存能量的方法
公开(公告)号：US4967141A
公开(公告)日：1990-10-30
申请号：US235529
申请日：1988-08-24
申请人： Masashi Kiguchi , Yoshimasa Murayama
发明人： Masashi Kiguchi , Yoshimasa Murayama
IPC分类号： H01L39/14 , H01F6/00 , H02J15/00 , H05K9/00
CPC分类号： H01F6/006 , Y10S505/725
摘要： A superconductive ring or coil is irradiated with a light ray so that its superconducting state is destroyed for a short period of time. Under the destruction of the superconducting state, removal of energy from the superconductive ring or coil or storage of energy therein is stably controlled.

3. 发明授权

US4759030A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4759030A
公开(公告)日：1988-07-19
申请号：US870948
申请日：1986-06-05
申请人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
发明人： Yoshimasa Murayama , Yasutsugu Takeda , Michiharu Nakamura , Yasuhiro Shiraki , Yoshifumi Katayama , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/0425
摘要： A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.
摘要翻译：具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同，并且由它们的组合形成的电子和空穴或激子可以是不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。更确定地，在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。

4. 发明授权

US4673959A Heterojunction FET with doubly-doped channel 失效
标题翻译：具有双掺杂沟道的异质结FET
公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译：公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。可以使用多量子阱结构作为较高的杂质活化效率半导体层。通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

5. 发明授权

US4605945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译：在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

6. 发明授权

US06525336B1 Superfine electronic device and method for making same 失效
标题翻译：超细电子设备及其制作方法
公开(公告)号：US06525336B1
公开(公告)日：2003-02-25
申请号：US08463761
申请日：1995-06-05
申请人： Seiichi Kondo , Yasuo Wada , Tsuyoshi Uda , Tokuo Kure , Tsuneo Ichiguchi , Shinji Okazaki , Yoshimasa Murayama
发明人： Seiichi Kondo , Yasuo Wada , Tsuyoshi Uda , Tokuo Kure , Tsuneo Ichiguchi , Shinji Okazaki , Yoshimasa Murayama
IPC分类号： H01L2906
CPC分类号： G11C13/025 , B82Y10/00 , B82Y15/00 , G11C11/34 , G11C19/00 , G11C2216/08 , H01L49/006 , H03K19/02
摘要： A superfine electronic device is disclosed, which is constructed by atomic fine lines having a structure in which a plurality of atoms are arranged on one or a plurality of straight lines, in a ring shape or on curves with a size of atomic level, and which includes elements for doping electrons and holes. Using these atomic fine lines, it is possible to integrate semiconductor elements utilizing pn junctions at an atomic level with a high density. A groove having a sufficiently small size is formed in an insulating film disposed on a substrate. Then, atoms or molecules are supplied on the substrate and in the groove, which and are heated to a temperature sufficiently high for moving the atoms or molecules during or after the supply thereof to form a quantum fine line at edge portions of the groove.
摘要翻译：公开了一种超细电子器件，其由具有多个原子排列在一个或多个直线上的原子细线构成，具有环形或具有原子级尺寸的曲线，并且其中包括用于掺杂电子和空穴的元件。使用这些原子细线，可以利用高密度的原子级的pn结集成半导体元件。在设置在基板上的绝缘膜中形成具有足够小尺寸的凹槽。然后，原子或分子被提供在衬底和沟槽中，并且被加热到足够高的温度以在其供给期间或之后移动原子或分子，以在槽的边缘部分处形成量子细线。

7. 发明授权

US6153500A Atomic wire and atomic wire switch 失效
标题翻译：原子线和原子线开关
公开(公告)号：US6153500A
公开(公告)日：2000-11-28
申请号：US521921
申请日：2000-03-09
申请人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
发明人： Satoshi Watanabe , Yoshimasa Murayama , Yoshimasa A. Ono , Tomihiro Hashizume , Yasuo Wada
IPC分类号： H01L21/3205 , H01L21/20 , H01L29/06 , H01L29/66 , H01L29/80 , H01L49/00
CPC分类号： H01L49/006 , Y10S438/962 , Y10S977/936
摘要： A fine wire is fabricated by supplying metal atoms to one row or a plurality of rows formed by extraction of terminated atoms or molecules to the surface of substance made non-conductive by terminating all dangling bonds on the surface thereof with atoms or molecules. The conductivity of the fine wire can be attained by supplying metal atoms larger in number to that required for just terminating dangling bonds formed by extraction of terminated atoms or molecules.
摘要翻译：通过将金属原子提供到通过用终止的原子或分子的表面上的所有悬挂键而将终止的原子或分子提取到不导电的物质的表面形成的一行或多行中来制造细线。细线的导电性可以通过提供数量更多的金属原子与通过提取封端的原子或分子形成的悬挂键刚刚终止所需的金属原子来实现。

8. 发明授权

US4796068A Semiconductor device having ultrahigh-mobility 失效
标题翻译：具有超高移动性的半导体器件
公开(公告)号：US4796068A
公开(公告)日：1989-01-03
申请号：US40123
申请日：1987-04-20
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Yoshimasa Murayama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Yoshimasa Murayama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/15 , H01L29/775 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/161
CPC分类号： B82Y10/00 , H01L29/158 , H01L29/775
摘要： A semiconductor device which utilizes the fact that the effective mass of charged particles becomes exceedingly large at certain points in the direction of a periodically repeating potential by virtue of a periodic structure in which semiconductor layers are stacked in the form of a superlattice. The periodic structure enables the movement of charged particles to be one-dimensional and thus permits a great improvement in the mobility of charged particles in the channel direction. Accordingly, it is possible to realize a FET of ultrahigh mobility.
摘要翻译：利用这样一个事实，即半导体层以超晶格形式堆叠的周期性结构，利用这样的事实，带电粒子的有效质量在周期性重复电位的方向上的某些点处变得非常大。周期性结构使得带电粒子的运动成为一维的，从而允许带电粒子在通道方向上的迁移率大大提高。因此，可以实现超高移动性的FET。

9. 发明授权

US5003366A Hetero-junction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US5003366A
公开(公告)日：1991-03-26
申请号：US542796
申请日：1990-06-25
申请人： Tomoyoshi Mishima , Junichi Kasai , Yoshimasa Murayama
发明人： Tomoyoshi Mishima , Junichi Kasai , Yoshimasa Murayama
IPC分类号： H01L29/73 , H01L21/331 , H01L29/06 , H01L29/10 , H01L29/201 , H01L29/70 , H01L29/72 , H01L29/737
CPC分类号： H01L29/7376 , H01L29/1004 , Y10S977/759 , Y10S977/936
摘要： The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are reduced and yet the lowering of the collector injection efficiency is suppressed, by forming at least one quantum well in a base region of the HBT and determining the width of one of the quantum levels formed in the quantum well and the energy in a barrier layer constituting the quantum well is within kT/2.

10. 发明授权

US4785340A Semiconductor device having doping multilayer structure 失效
标题翻译：具有掺杂多层结构的半导体器件
公开(公告)号：US4785340A
公开(公告)日：1988-11-15
申请号：US839349
申请日：1986-03-13
申请人： Kiyokazu Nakagawa , Akitoshi Ishizaka , Yasuhiro Shiraki , Yoshimasa Murayama
发明人： Kiyokazu Nakagawa , Akitoshi Ishizaka , Yasuhiro Shiraki , Yoshimasa Murayama
IPC分类号： H01L21/203 , H01L21/28 , H01L21/331 , H01L21/335 , H01L29/10 , H01L29/15 , H01L29/732 , H01L29/72 , H01L27/12 , H01L29/161
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/28 , H01L29/1004 , H01L29/15 , H01L29/66287 , H01L29/66424 , H01L29/732
摘要： A semiconductor device includes a multilayer semiconductor structure comprising alternately p- (or n-) type heavily doped semiconductor layers and n- (or p-) type lightly doped semiconductor layers. Holes (or electrons) are confined within a narrow layer in a fashion like a two-dimensional gas, whereby high mobility is realized notwithstanding of high carrier concentration. Electrical conductivity of the multilayer semiconductor structure can be made higher than that of a bulk semiconductor. Very high conductivity can be realized by forming each layer in a thickness within a range of 10 .ANG. to 1000 .ANG. and preferably 50 .ANG. to 500 .ANG.. Ratio in impurity concentration of the heavily doped layer to the low doped layer is not smaller than one order of magnitude.
摘要翻译：半导体器件包括交替的p-（或n-）型重掺杂半导体层和n-（或p-）型轻掺杂半导体层的多层半导体结构。孔（或电子）以类似二维气体的方式被限制在窄层内，由此即使高载流子浓度也能实现高迁移率。可以使多层半导体结构的导电性高于体半导体。可以通过将厚度范围在10安培至1000安培范围内，优选为50安培至500安培的厚度来形成非常高的导电性。重掺杂层的杂质浓度与低掺杂层的比例不小于一个数量级。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式