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1. 发明授权

US4495409A Photosensor with diode array 失效
标题翻译：带二极管阵列的光电传感器
公开(公告)号：US4495409A
公开(公告)日：1985-01-22
申请号：US348669
申请日：1982-02-16
申请人： Toru Baji , Naohiko Koizumi , Toshihisa Tsukada , Hideaki Yamamoto , Yasuharu Shimomoto , Yasuo Tanaka
发明人： Toru Baji , Naohiko Koizumi , Toshihisa Tsukada , Hideaki Yamamoto , Yasuharu Shimomoto , Yasuo Tanaka
IPC分类号： H01L27/146 , H04N1/031 , H04N1/193 , H01J40/14
CPC分类号： H04N1/031 , H01L27/14643 , H01L27/14665 , H04N1/1931
摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.
摘要翻译：一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器，要读出，用于偏压图像的二极管的电压同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

2. 发明授权

US4554478A Photoelectric conversion element 失效
标题翻译：光电转换元件
公开(公告)号：US4554478A
公开(公告)日：1985-11-19
申请号：US497841
申请日：1983-05-25
申请人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
发明人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
IPC分类号： H01J29/45 , H01L27/146 , H01L31/0224 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01J31/38
CPC分类号： H01L27/14665 , H01J29/45 , H01J29/456 , H01L31/022408
摘要： In a photoelectric conversion element including at least a first electrode and a photoconductive layer having an amorphous material whose indispensable constituent is silicon and which contains hydrogen as an essential constituent element on a predetermined substrate, the present invention discloses a photoelectric conversion element wherein said layer of the amorphous material is disposed on said first electrode via a light transmitting or light semi-transmitting metallic layer for adhesion with respect to said amorphous material. As said metallic layer for adhesion, preferred is a layer consisting of at least one metal selected from the group consisting of Ta, Cr, W, Nd, Mo, V and Ti. Thus, adhesion between said substrate and said amorphous material can be improved.
摘要翻译：在至少具有第一电极和光电导层的光电转换元件中，所述光电转换元件具有不可缺少的成分为硅并且含有作为必要构成元素的氢作为预定基板的非晶材料的光电转换元件，本发明公开了一种光电转换元件，非晶材料通过透光或半透光金属层设置在所述第一电极上，用于相对于所述无定形材料的粘合。作为所述金属粘合层，优选由选自Ta，Cr，W，Nd，Mo，V和Ti中的至少一种金属组成的层。因此，可以提高所述基板和所述非晶材料之间的粘附。

3. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

4. 发明授权

US4618873A Thin film device 失效
标题翻译：薄膜装置
公开(公告)号：US4618873A
公开(公告)日：1986-10-21
申请号：US621683
申请日：1984-06-18
申请人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
发明人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
IPC分类号： H01L21/02 , H01L21/822 , H01L21/84 , H01L27/04 , H01L27/146 , H01L29/45 , H01L31/02 , H01L29/78
CPC分类号： H01L28/20 , H01L21/84 , H01L27/14643 , H01L29/458
摘要： In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
摘要翻译：在具有氢化非晶硅膜的薄膜器件中，在氢化非晶硅膜上形成金属层，然后除去金属层。形成在氢化非晶硅膜上的反应层用作电阻。

5. 发明授权

US4556800A Optical image sensor apparatus with grouped photosensors connected in common 失效
标题翻译：具有分组光电传感器的光学图像传感器装置共同连接
公开(公告)号：US4556800A
公开(公告)日：1985-12-03
申请号：US479893
申请日：1983-03-29
申请人： Hisao Ohta , Toru Baji , Yuji Izawa , Eizou Ebisui , Toshihisa Tsukada , Hideaki Yamamoto
发明人： Hisao Ohta , Toru Baji , Yuji Izawa , Eizou Ebisui , Toshihisa Tsukada , Hideaki Yamamoto
IPC分类号： H04N1/028 , G06K9/20 , G06T1/00 , H04N1/19 , H04N1/193 , H04N1/40 , H04N3/14
CPC分类号： G06K9/2009 , H04N1/1931 , H04N1/40056
摘要： An optical image sensor apparatus in which a plurality of photosensors arrayed in a primary scanning direction are scanned to produce readout signals. The plurality of photosensors are classified into a number of groups each including a predetermined number of the photosensors, wherein those photosensors occupying equivalently the same position in the different groups are combined in common. The outputs of the photosensors are sequentially and selectively scanned on a group basis to produce readout signal for each of the groups. To provide a scanning readout operation at an increased speed, an integrating circuit is provided for each of the photosensors exchangeably for each group. The outputs of all the photosensors belonging to a given one of the group are simultaneously supplied to the respective integrating circuits. The readout signal output is obtained by scanning sequentially the outputs of the integrating circuits.
摘要翻译：其中扫描沿主扫描方向排列的多个光电传感器以产生读出信号的光学图像传感器装置。多个光电传感器被分成多个组，每个组包括预定数量的光传感器，其中在不同组中占据相同位置的那些光传感器共同组合。依次选择性地扫描光电传感器的输出，以产生每个组的读出信号。为了以增加的速度提供扫描读出操作，为每组可更换的每个光电传感器提供积分电路。属于给定组中的所有光电传感器的输出被同时提供给各个积分电路。通过依次扫描积分电路的输出来获得读出信号输出。

6. 发明授权

US4565928A Photo electro transducer device 失效
标题翻译：光电传感器装置
公开(公告)号：US4565928A
公开(公告)日：1986-01-21
申请号：US421403
申请日：1982-09-22
申请人： Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada , Akira Sasano
发明人： Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada , Akira Sasano
IPC分类号： H04N1/028 , H01L27/14 , H01L27/146 , H04N1/40 , H01J40/14
CPC分类号： H01L27/14643 , H04N1/40056 , H04N3/15
摘要： A photosensor comprises a first conductive layer formed on a given substrate, a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode and a blocking diode connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer for connecting together, at the other end, corresponding unit picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material. Dispersion of outputs from the respective unit picture elements can be minimized.
摘要翻译：光电传感器包括形成在给定衬底上的第一导电层，形成在第一导电层上的多个单位像素的一维阵列，以沿其纵向方向延伸，每个单位像素具有光电二极管和阻塞二极管与反射整流方向的光电二极管串联连接的第二导电层，用于将属于至少两个单元像素组中的至少两个单元像素组中的每一个的相应单元图像元素连接在一起的第二导电层，图像元素和用于将另一端连接在一起的第三导电层，各组中的相应单元像素，各组中的光电二极管和阻塞二极管的组由相同的半导体材料制成。可以将来自相应单元图像的输出的色散最小化。

7. 发明授权

US4405935A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4405935A
公开(公告)日：1983-09-20
申请号：US227679
申请日：1981-01-23
申请人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
发明人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14672
摘要： Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.
摘要翻译：公开了一种具有半导体集成电路的固态成像装置，其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上，设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极，其特征在于，至少形成在所述光电导膜之间形成的结的击穿电压，所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压其形成信号导出部分的杂质区域。

8. 发明授权

US4364973A Method for fabricating a solid-state imaging device using photoconductive film 失效
标题翻译：使用光电导膜制造固态成像装置的方法
公开(公告)号：US4364973A
公开(公告)日：1982-12-21
申请号：US247737
申请日：1981-03-26
申请人： Norio Koike , Toru Baji , Toshihisa Tsukada , Hideaki Yamamoto
发明人： Norio Koike , Toru Baji , Toshihisa Tsukada , Hideaki Yamamoto
IPC分类号： H01L27/14 , H01L27/146 , H01L31/18 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374 , B05D1/32
CPC分类号： H01L27/14665
摘要： A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.
摘要翻译：一种使用光电导膜制造固态成像装置的方法，包括通过使用屏蔽板将光电导材料沉积到扫描仪IC上的步骤，所述扫描器IC包括垂直开关MOS晶体管和排列在形式的矩阵和用于扫描垂直和水平切换MOS晶体管的垂直和水平扫描移位寄存器，所述屏蔽板具有对应于垂直开关MOS晶体管阵列区域的开路部分。

9. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

10. 发明授权

US4407010A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4407010A
公开(公告)日：1983-09-27
申请号：US290570
申请日：1981-08-06
申请人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
发明人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
IPC分类号： H01L27/14 , H01L21/8234 , H01L23/62 , H01L23/64 , H01L27/02 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/146 , H01L29/78 , H01L31/08 , H02H7/20 , H03F1/42 , H03F1/52 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/374 , H04N3/14
CPC分类号： H01L23/62 , H01L23/647 , H01L27/0251 , H01L27/14654 , H04N3/1512 , H04N3/1568 , H01L2924/0002
摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要翻译：具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。第三场效应晶体管耦合到光电转换元件，用于复位它。

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