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1. 发明授权

US4495409A Photosensor with diode array 失效
标题翻译：带二极管阵列的光电传感器
公开(公告)号：US4495409A
公开(公告)日：1985-01-22
申请号：US348669
申请日：1982-02-16
申请人： Toru Baji , Naohiko Koizumi , Toshihisa Tsukada , Hideaki Yamamoto , Yasuharu Shimomoto , Yasuo Tanaka
发明人： Toru Baji , Naohiko Koizumi , Toshihisa Tsukada , Hideaki Yamamoto , Yasuharu Shimomoto , Yasuo Tanaka
IPC分类号： H01L27/146 , H04N1/031 , H04N1/193 , H01J40/14
CPC分类号： H04N1/031 , H01L27/14643 , H01L27/14665 , H04N1/1931
摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.
摘要翻译：一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器，要读出，用于偏压图像的二极管的电压同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

2. 发明授权

US4554478A Photoelectric conversion element 失效
标题翻译：光电转换元件
公开(公告)号：US4554478A
公开(公告)日：1985-11-19
申请号：US497841
申请日：1983-05-25
申请人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
发明人： Yasuharu Shimomoto , Yasuo Tanaka , Yukio Takasaki , Sachio Ishioka , Toshihisa Tsukada , Toru Baji
IPC分类号： H01J29/45 , H01L27/146 , H01L31/0224 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01J31/38
CPC分类号： H01L27/14665 , H01J29/45 , H01J29/456 , H01L31/022408
摘要： In a photoelectric conversion element including at least a first electrode and a photoconductive layer having an amorphous material whose indispensable constituent is silicon and which contains hydrogen as an essential constituent element on a predetermined substrate, the present invention discloses a photoelectric conversion element wherein said layer of the amorphous material is disposed on said first electrode via a light transmitting or light semi-transmitting metallic layer for adhesion with respect to said amorphous material. As said metallic layer for adhesion, preferred is a layer consisting of at least one metal selected from the group consisting of Ta, Cr, W, Nd, Mo, V and Ti. Thus, adhesion between said substrate and said amorphous material can be improved.
摘要翻译：在至少具有第一电极和光电导层的光电转换元件中，所述光电转换元件具有不可缺少的成分为硅并且含有作为必要构成元素的氢作为预定基板的非晶材料的光电转换元件，本发明公开了一种光电转换元件，非晶材料通过透光或半透光金属层设置在所述第一电极上，用于相对于所述无定形材料的粘合。作为所述金属粘合层，优选由选自Ta，Cr，W，Nd，Mo，V和Ti中的至少一种金属组成的层。因此，可以提高所述基板和所述非晶材料之间的粘附。

3. 发明授权

US4430185A Method of producing photoelectric transducers 失效
标题翻译：光电传感器的制造方法
公开(公告)号：US4430185A
公开(公告)日：1984-02-07
申请号：US245749
申请日：1981-03-20
申请人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
发明人： Yasuharu Shimomoto , Toshihisa Tsukada , Akira Sasano , Yasuo Tanaka , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： C23C14/00 , C23C16/509 , H01L27/146 , H01L31/20 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , C23C15/00
CPC分类号： C23C14/0036 , C23C16/5096 , H01L27/14665 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.
摘要翻译：在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极电极相对，并且所述光导电层形成，同时向第一电极施加负电位。这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

4. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

5. 发明授权

US4457949A Method of producing a photoelectric conversion layer 失效
标题翻译：光电转换层的制造方法
公开(公告)号：US4457949A
公开(公告)日：1984-07-03
申请号：US388619
申请日：1982-06-15
申请人： Yukio Takasaki , Yasuharu Shimomoto , Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada
发明人： Yukio Takasaki , Yasuharu Shimomoto , Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada
IPC分类号： H01L31/0248 , H01L31/08 , B05D3/14 , B05D5/12
CPC分类号： H01J9/233 , H01L31/08
摘要： A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.
摘要翻译：在等离子体气氛中，在200℃以下的基板上形成含氢非晶硅层，停止等离子体，在200〜400℃的温度范围内加热该层底物。可以使电子或空穴的光电流的饱和场低。在使用电子作为主要载体的情况下，优选将加热温度设定在200℃-240℃的温度范围内，在使用空穴作为主要载体的情况下，优选设定在270℃ C.-400℃

6. 发明授权

US4412900A Method of manufacturing photosensors 失效
标题翻译：制造光电传感器的方法
公开(公告)号：US4412900A
公开(公告)日：1983-11-01
申请号：US357076
申请日：1982-03-11
申请人： Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto
发明人： Yasuo Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto
IPC分类号： H01L31/10 , H01L27/146 , C23C15/00
CPC分类号： H01L27/14665 , H01L27/14603 , H01L27/14621 , H01L27/14692
摘要： A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.
摘要翻译：公开了一种制造光电传感器的方法，其包括以下步骤：在期望的衬底上形成主要由硅构成并含有氢的光导体膜，通过溅射在光致导体膜上形成透明导电膜，并加热具有溅射的透明导电膜至少在140℃且不高于280℃。优选在170-250℃的温度下进行热处理，在该温度下将提供更大的效果。这种热处理显着提高了光响应速度。

7. 发明授权

US5585290A Method of manufacturing a thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US5585290A
公开(公告)日：1996-12-17
申请号：US158219
申请日：1993-11-29
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。

8. 发明授权

US5200634A Thin film phototransistor and photosensor array using the same 失效
标题翻译：薄膜光电晶体管和光电传感器阵列使用相同
公开(公告)号：US5200634A
公开(公告)日：1993-04-06
申请号：US803798
申请日：1991-12-09
申请人： Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
发明人： Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
IPC分类号： H01L27/146 , H01L31/113 , H04N1/031
CPC分类号： H04N1/02805 , H01L27/14643 , H01L31/1136 , H04N1/0313 , H04N1/0316
摘要： A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.
摘要翻译：提供具有场效应晶体管结构的薄膜光电晶体管，其中栅电极的至少一端不与邻近端的电极重叠。这种薄膜光电晶体管具有：（1）作为光电传感器和开关功能的功能; （2）高输入阻抗; （3）电压控制功能; 和（4）高光电流ON / OFF比。该薄膜光电晶体管可以单独使用或与一维或二维光电传感器阵列的图像元素的薄膜晶体管一起使用，产生令人满意的结果。

9. 发明授权

US4990981A Thin film transistor and a liquid crystal display device using same 失效
标题翻译：薄膜晶体管和使用其的液晶显示装置
公开(公告)号：US4990981A
公开(公告)日：1991-02-05
申请号：US296811
申请日：1989-01-13
申请人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
发明人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/786
CPC分类号： G02F1/1368 , H01L29/78633 , H01L29/78669
摘要： A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
摘要翻译：公开了一种薄膜晶体管，其包括设置在预定衬底上的栅电极，栅极绝缘层，半导体层，源电极和漏电极，并且其构造使得半导体层不是“ 存在于与所述基板平行的强电场的任何区域中。除此之外，还公开了使用该薄膜晶体管的液晶显示装置。根据本发明的薄膜晶体管由于光电流而导致的关断电平的增加很小，并且适用于驱动液晶显示装置中的像素。

10. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

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