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1. 发明申请

US20050006651A1 Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens 有权
标题翻译：具有无定形含氟聚合物密封剂和透镜的发光二极管（LED）
公开(公告)号：US20050006651A1
公开(公告)日：2005-01-13
申请号：US10609040
申请日：2003-06-27
申请人： Steven LeBoeuf , Donald Buckley , Stanton Weaver
发明人： Steven LeBoeuf , Donald Buckley , Stanton Weaver
IPC分类号： H01L33/50 , H01L27/15
CPC分类号： H01L33/502 , H01L33/44 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/16225 , H05K1/0203 , H05K2201/10106
摘要： A lens and encapsulant made of an amorphous fluoropolymer for a light-emitting diode (LED) or diode laser, such as an ultraviolet (UV) LED (UVLED). A semiconductor diode die (114) is formed by growing a diode (110) on a substrate layer (115) such as sapphire. The diode die (114) is flipped so that it emits light (160, 365) through the face (150) of the layer (115). An amorphous fluoropolymer encapsulant encapsulates the emitting face of the diode die (114), and may be shaped as a lens to form an integral encapsulant/lens. Or, a lens (230, 340) of amorphous fluoropolymer may be joined to the encapsulant (220). Additional joined or separate lenses (350) may also be used. The encapsulant/lens is transmissive to UV light as well as infrared light. Encapsulating methods are also provided.
摘要翻译：由用于发光二极管（LED）或二极管激光器（例如紫外线（UV）LED（UVLED））的无定形含氟聚合物制成的透镜和密封剂。通过在诸如蓝宝石的衬底层（115）上生长二极管（110）来形成半导体二极管管芯（114）。二极管管芯（114）被翻转，使得它通过层（115）的面（150）发光（160,365）。无定形氟聚合物密封剂封装二极管管芯（114）的发射面，并且可以被成形为透镜以形成整体的密封剂/透镜。或者，可以将无定形含氟聚合物的透镜（230,340）接合到密封剂（220）。还可以使用附加的连接或分开的透镜（350）。密封剂/透镜对于紫外线以及红外光是透射的。还提供封装方法。

2. 发明申请

US20050264172A1 UV emitting LED having mesa structure 有权
标题翻译： UV发光LED具有台面结构
公开(公告)号：US20050264172A1
公开(公告)日：2005-12-01
申请号：US10854596
申请日：2004-05-26
申请人： Robert Wojnarowski , Stanton Weaver , Steven LeBoeuf
发明人： Robert Wojnarowski , Stanton Weaver , Steven LeBoeuf
IPC分类号： H01J1/62 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L33/24
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the LED's are provided with a rounded mesa configuration. In a specific embodiment, the p-type metal is positioned upon a rounded mesa, such as a parabolic mesa, formed out of the base structure materials.
摘要翻译：本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。在本发明的一个实施例中，UV-LED的特征在于包括衬底，p掺杂半导体材料，多量子阱，n掺杂半导体材料的基底材料，基底材料是p型金属并且其中LED具有圆形台面构造。在具体实施例中，p型金属位于由基底结构材料形成的圆形台面（例如抛物面台面）上。

3. 发明申请

US20060071219A1 Monolithic array for solid state ultraviolet light emitters 有权
公开(公告)号：US20060071219A1
公开(公告)日：2006-04-06
申请号：US10950029
申请日：2004-09-24
申请人： Robert Wojnarowski , Stanton Weaver , Abasifreke Ebong , Xian An Cao , Steven LeBoeuf , Larry Rowland , Stephen Arthur
发明人： Robert Wojnarowski , Stanton Weaver , Abasifreke Ebong , Xian An Cao , Steven LeBoeuf , Larry Rowland , Stephen Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/32
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

4. 发明申请

US20050087884A1 Flip-chip light emitting diode 失效
标题翻译：倒装芯片发光二极管
公开(公告)号：US20050087884A1
公开(公告)日：2005-04-28
申请号：US10693126
申请日：2003-10-24
申请人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
发明人： Edward Stokes , Mark D'Evelyn , Stanton Weaver , Peter Sandvik , Abasifreke Ebong , Xian-an Cao , Steven LeBoeuf , Nikhil Taskar
IPC分类号： H01L23/48 , H01L33/38 , H01L33/40
CPC分类号： H01L33/405 , H01L33/387 , H01L2933/0083
摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).
摘要翻译：倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化以限定装置台面（30,30'，30“）。反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触，设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

5. 发明申请

US20070114557A1 Flip-chip light emitting diode device without sub-mount 审中-公开
公开(公告)号：US20070114557A1
公开(公告)日：2007-05-24
申请号：US11654165
申请日：2007-01-16
申请人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
发明人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/81 , H01L33/38 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05611 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/3003 , H01L2224/73103 , H01L2224/73203 , H01L2224/83193 , H01L2224/83203 , H01L2224/83205 , H01L2224/8321 , H01L2224/8323 , H01L2224/83815 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

6. 发明申请

US20070097366A1 Optical system and method for detecting particles 审中-公开
标题翻译：用于检测颗粒的光学系统和方法
公开(公告)号：US20070097366A1
公开(公告)日：2007-05-03
申请号：US11262210
申请日：2005-10-31
申请人： Steven LeBoeuf , Alexei Vertiatchikh , Stanton Weaver , Radislav Potyrailo , Xian-An Cao
发明人： Steven LeBoeuf , Alexei Vertiatchikh , Stanton Weaver , Radislav Potyrailo , Xian-An Cao
IPC分类号： G01N21/00
CPC分类号： G01N21/6486 , G01N21/15 , G01N21/532 , G01N21/645
摘要： Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.
摘要翻译：本发明的实施例包括一种粒子检测系统，其包括发光源，非准直反射器，准直反射器和检测器。来自发光源的光由非准直反射器引导到可以传播颗粒物流的区域。来自光撞击颗粒的荧光被重定向到准直反射器，然后被引导到检测器上。其他实施例包括用于拉动一对流体流过检测系统的单个泵。其他实施例包括多个发光源，其光通过单个反射器被引导到颗粒流。其他实施方案包括用于检测颗粒的方法。

7. 发明申请

US20050194605A1 Flip-chip light emitting diode device without sub-mount 有权
标题翻译：倒装芯片发光二极管器件无需安装
公开(公告)号：US20050194605A1
公开(公告)日：2005-09-08
申请号：US10794935
申请日：2004-03-05
申请人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
发明人： Bryan Shelton , Sebastien Libon , Hari Venugopalan , Ivan Eliashevich , Stanton Weaver , Chen-Lun Chen , Thomas Soules , Steven LeBoeuf , Stephen Arthur
IPC分类号： H01L27/15 , H01L33/38 , H01L33/62
CPC分类号： H01L33/62 , H01L24/81 , H01L33/38 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04026 , H01L2224/05005 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05564 , H01L2224/05568 , H01L2224/05611 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/13639 , H01L2224/13644 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/3003 , H01L2224/73103 , H01L2224/73203 , H01L2224/83193 , H01L2224/83203 , H01L2224/83205 , H01L2224/8321 , H01L2224/8323 , H01L2224/83815 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).
摘要翻译：发光二极管（10）具有背面和前侧，具有至少一个n型电极（14）和设置在其上的至少一个p型电极（12），其限定最小电极间隔（d < ）。接合焊盘层（50）包括至少一个n型接合焊盘（64）和至少一个限定最小接合焊盘间隔（p>焊盘）的p型接合焊盘（62）大于最小电极分离（d _{电极）。插入在发光二极管（10）的前侧和接合焊盘层（50）之间的至少一个扇形层（30）包括穿过电介质层的通孔（34,54）的多个导电路径以在所述至少一个n型电极（14）和所述至少一个n型焊盘（64）之间以及所述至少一个p型电极（12）和所述至少一个p型电极（12）之间提供电连通一个p型接合焊盘（62）。}

8. 发明申请

US20070000330A1 Pressure sensor 审中-公开
标题翻译：压力传感器
公开(公告)号：US20070000330A1
公开(公告)日：2007-01-04
申请号：US11516237
申请日：2006-09-06
申请人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
发明人： Steven Tysoe , Mark D'Evelyn , Charles Becker , Abasifreke Ebong , Stephen Arthur , Steven LeBoeuf , Robert Wojnarowski , Samhita Dasgupta , Vinayak Tilak , Kanakasabapathi Subramanian , Jeffrey Fortin
IPC分类号： G01L7/00
CPC分类号： H01L21/31111
摘要： A pressure sensor is provided. The pressure sensor includes a multi-layer laminate comprising a substrate and a semiconductor layer, wherein the substrate comprises single crystal or quasi-single crystal aluminum oxide, and a portion of the substrate that is spaced from a peripheral edge is wet etched to form an inwardly facing sidewall that defines a volume; and a substrate to which the multi-layer laminate is secured. The volume is an enclosed volume further defined by a substrate surface.
摘要翻译：提供压力传感器。压力传感器包括多层层压体，其包括基底和半导体层，其中基底包括单晶或准单晶氧化铝，并且与周边边缘间隔开的部分基底被湿蚀刻以形成限定体积的面向内的侧壁; 以及固定有多层层叠体的基板。体积是由衬底表面进一步限定的封闭体积。

9. 发明申请

US20080006844A1 CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD 有权
标题翻译：晶体组成，波形，器件和相关方法
公开(公告)号：US20080006844A1
公开(公告)日：2008-01-10
申请号：US11621556
申请日：2007-01-09
申请人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
发明人： Mark D'Evelyn , Dong-Sil Park , Steven LeBoeuf , Larry Rowland , Kristi Narang , Huicong Hong , Stephen Arthur , Peter Sandvik
IPC分类号： H01L33/00 , C01B21/06 , H01B1/02
CPC分类号： C30B29/406 , C30B7/10 , H01S5/305 , H01S5/32341 , Y10T428/21
摘要： A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.
摘要翻译：提供了包括镓和氮的结晶组合物。结晶组合物可以具有以每立方厘米小于约3×10 18的浓度存在的氧量，并且在确定体积的结晶组合物中可以没有二维平面边界缺陷。该体积可以具有至少一个尺寸为约2.75毫米或更大，并且该体积可具有小于约10,000每平方厘米的一维线性缺陷位错密度。

10. 发明申请

US20070086915A1 Detection apparatus and associated method 有权
标题翻译：检测装置及相关方法
公开(公告)号：US20070086915A1
公开(公告)日：2007-04-19
申请号：US11480068
申请日：2006-06-30
申请人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
发明人： Steven LeBoeuf , Peter Sandvik , Radislav Potyrailo
IPC分类号： G01N31/22
CPC分类号： G01N33/54366 , G01N21/6428 , G01N21/645 , G01N33/54373 , G01N2021/7786
摘要： An apparatus includes an article and a detector. The article includes a substrate, a faceted structure disposed on the substrate, and a sensor layer disposed on the faceted structure. The faceted structure is disposed on the substrate first surface and itself has a surface. The faceted structure surface has peripheral edge defining a diameter of the faceted structure surface. The sensor layer is disposed on the faceted structure surface. The sensor layer can react or can interact with a target species when the target species is sufficiently proximate to the sensor layer. The sensor layer responds to the reaction or to the interaction in a detectable manner. The detector detects a response to the reaction, or to the interaction, of the target species with the sensor layer.
摘要翻译：一种装置包括物品和检测器。该物品包括基底，设置在基底上的刻面结构以及设置在刻面结构上的传感器层。小面结构设置在基板第一表面上并且本身具有表面。小面结构表面具有限定小平面结构表面直径的周缘。传感器层设置在刻面结构表面上。当目标物种足够靠近传感器层时，传感器层可以与目标物种反应或相互作用。传感器层以可检测的方式响应于反应或相互作用。检测器检测到目标物种与传感器层的反应或相互作用的响应。

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