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1. 发明授权

US07842547B2 Laser lift-off of sapphire from a nitride flip-chip 有权
标题翻译：激光剥离蓝宝石从氮化物倒装芯片
公开(公告)号：US07842547B2
公开(公告)日：2010-11-30
申请号：US10584434
申请日：2004-12-21
申请人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
发明人： Bryan S. Shelton , Sebastien Libon , Ivan Eliashevich
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.
摘要翻译：在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。在外延晶片上制造多个发光二极管器件。切割外延晶片以产生器件裸片。器件芯片被倒装芯片结合到安装座。倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。

2. 发明申请

US20100181584A1 LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION 审中-公开
标题翻译：激光提升与改进的光提取
公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
申请人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
发明人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译：发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。电介质层的折射率基本上与半导体层叠层的折射率相匹配。电介质层具有远离半导体层堆叠的主表面。远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。

3. 发明授权

US07015516B2 Led packages having improved light extraction 失效
标题翻译： LED封装具有改进的光提取
公开(公告)号：US07015516B2
公开(公告)日：2006-03-21
申请号：US10417000
申请日：2001-11-14
申请人： Ivan Eliashevich , Robert F. Karlicek, Jr. , Hari Venugopalan
发明人： Ivan Eliashevich , Robert F. Karlicek, Jr. , Hari Venugopalan
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A light-emitting microelectronic package includes a light-emitting diode (110) having a first region (114) of a first conductivity type, a second region (116) of a second conductivity type, and a light-emitting p-n junction (118) between the first and second regions. The light-emitting diode defines a lower contact surface (120) and a mesa (122) projecting upwardly from the lower contact surface. The first region (114) of a first conductivity type is disposed in the mesa (122) and defines a top surface of the mesa, and the second region (116) of a second conductivity type defines the lower contact surface that substantially surrounds the mesa (122). The mesa includes at least one sidewall (130) extending between the top surface (124) of the mesa and the lower contact surface (120), the at least one sidewall (130) having a roughened surface for optimizing light extraction from the package.
摘要翻译：发光微电子封装包括具有第一导电类型的第一区域（114）和第二导电类型的第二区域（116）和发光pn结（118）的发光二极管（110）在第一和第二区域之间。发光二极管限定从下接触表面向上突出的下接触表面（120）和台面（122）。第一导电类型的第一区域（114）设置在台面（122）中并且限定台面的顶表面，并且第二导电类型的第二区域（116）限定基本上围绕台面的下接触表面（122）。台面包括在台面的顶表面（124）和下接触表面（120）之间延伸的至少一个侧壁（130），所述至少一个侧壁（130）具有粗糙表面，用于优化从包装中的光提取。

4. 发明授权

US06958498B2 Optimized contact design for flip-chip LED 失效
标题翻译：优化的倒装芯片LED接点设计
公开(公告)号：US06958498B2
公开(公告)日：2005-10-25
申请号：US10256402
申请日：2002-09-27
申请人： Bryan Shelton , Ivan Eliashevich , Hari Venugopalan
发明人： Bryan Shelton , Ivan Eliashevich , Hari Venugopalan
IPC分类号： H01L33/20 , H01L33/38 , H01L29/22
CPC分类号： H01L33/38 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.
摘要翻译：发光二极管设有电极和焊盘结构，便于电流扩散和散热。发光二极管可以形成为具有从第一区域的表面突出的第一区域和台面的层叠结构的管芯。第一电极可以基本上覆盖台面并且具有设置在其上的多个焊盘使相对于第一电极的接触面积最大化。第二电极可以作为迹线设置在第一区域的表面上，迹线具有螺旋，分段/叉指，环形或图案。可选地，迹线包括朝向第一电极的边缘向外突出的角尖。

5. 发明授权

US07358539B2 Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts 有权
标题翻译：倒装芯片发光二极管，具有基于铟锡氧化物的反射触点
公开(公告)号：US07358539B2
公开(公告)日：2008-04-15
申请号：US10249436
申请日：2003-04-09
申请人： Hari S. Venugopalan , Ivan Eliashevich
发明人： Hari S. Venugopalan , Ivan Eliashevich
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L23/48
CPC分类号： H01L33/20 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2933/0016 , H01L2224/05644 , H01L2924/00014 , H01L2224/05124 , H01L2224/05139
摘要： A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light-generating p/n junction. An electrode (30) is formed on the semiconductor layers (22) for flip-chip bonding the diode die (12) to an associated mount (14). The electrode (30) includes an optically transparent layer (42) formed of a substantially optically transparent material adjacent to the semiconductor layers (22) that makes ohmic contact therewith, and a reflective layer (44) adjacent to the optically transparent layer (42) and in electrically conductive communication therewith.
摘要翻译：倒装芯片发光二极管管芯（12）包括透光基板（20），并且多个半导体层（22）设置在透光基板（20）上。半导体层（22）限定发光p / n结。在半导体层（22）上形成电极（30），用于将二极管管芯（12）倒装成相关的安装件（14）。电极（30）包括由与其与其形成欧姆接触的半导体层（22）相邻的基本上光学透明的材料形成的光学透明层（42）和与光学透明层（42）相邻的反射层（44）并与其导电连通。

6. 发明申请

US20070096120A1 Lateral current GaN flip chip LED with shaped transparent substrate 审中-公开
标题翻译：横向电流GaN倒装芯片LED带形状透明基板
公开(公告)号：US20070096120A1
公开(公告)日：2007-05-03
申请号：US11260784
申请日：2005-10-27
申请人： Ivan Eliashevich , Hari Venugopalan , Emil Stefanov , Xian-An Cao , Bryan Shelton
发明人： Ivan Eliashevich , Hari Venugopalan , Emil Stefanov , Xian-An Cao , Bryan Shelton
IPC分类号： H01L31/12
CPC分类号： H01L33/20
摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).
摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分，其基本上不垂直于衬底（200）的第一面（202）。外延结构（100）设置在基板（200）的第一面（202）上。

7. 发明授权

US07190005B2 GaN LED with solderable backside metal 有权
标题翻译：具有可焊接背面金属的GaN LED
公开(公告)号：US07190005B2
公开(公告)日：2007-03-13
申请号：US10874104
申请日：2004-06-22
申请人： Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
发明人： Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
IPC分类号： H01L33/00 , H01L21/76
CPC分类号： H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).
摘要翻译：公开了一种发光元件（24）。发光二极管（LED）包括具有正面和背面（33,35）的蓝宝石衬底（26）和沉积在蓝宝石衬底的前侧（33）上的多个半导体层（28,30,32）（26）。半导体层（28,30,32）限定响应于电输入而发光的发光结构。金属化堆叠（40）包括沉积在蓝宝石衬底（26）的背面（35）上的粘合层（34）和连接到粘合层（34）的可焊接层（38），使得可焊层（ 38）通过粘合层（34）固定到蓝宝石衬底（26）。设置有LED的支撑结构（42）。在LED和支撑结构（42）之间布置有焊料接合（44）。焊接接合（44）将LED固定到支撑结构（42）。

8. 发明授权

US07064356B2 Flip chip light emitting diode with micromesas and a conductive mesh 失效
标题翻译：倒装芯片发光二极管，具有微电极和导电网
公开(公告)号：US07064356B2
公开(公告)日：2006-06-20
申请号：US10826980
申请日：2004-04-16
申请人： Emil P. Stefanov , Hari S. Venugopalan , Bryan S. Shelton , Ivan Eliashevich
发明人： Emil P. Stefanov , Hari S. Venugopalan , Bryan S. Shelton , Ivan Eliashevich
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20
摘要： A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
摘要翻译：倒装芯片发光二极管（12）包括具有设置在其上的基极半导体层（40）的透光衬底（10）。导电网（18）设置在基底半导体层（40）上并与其导电接触。发光微镜（30）设置在导电网（18）的开口（20）中。每个发光微镜（30）具有与第一导电类型相反的第二导电类型的最上层（46）。第一导电型电极（14）设置在基底半导体层（40）上并与导电网（18）电连通。绝缘层（60）设置在导电网（18）之上。第二导电型电极层（24）设置在绝缘层（60）和发光微孔（30）之上。绝缘层（60）将第二导电型电极层（24）与导电网（18）绝缘。

9. 发明授权

US06902990B2 Semiconductor device separation using a patterned laser projection 有权
公开(公告)号：US06902990B2
公开(公告)日：2005-06-07
申请号：US10114099
申请日：2002-04-02
申请人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
发明人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
IPC分类号： B23K26/073 , B23K26/40 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/46 , H01L21/78 , H01L33/00 , H01L21/406
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.

10. 发明申请

US20050023550A1 Flip chip light emitting diode devices having thinned or removed substrates 有权
标题翻译：倒装芯片发光二极管器件具有减薄或移除的衬底
公开(公告)号：US20050023550A1
公开(公告)日：2005-02-03
申请号：US10899864
申请日：2004-07-27
申请人： Ivan Eliashevich , Boris Kolodin , Emil Stefanov
发明人： Ivan Eliashevich , Boris Kolodin , Emil Stefanov
IPC分类号： H01L21/00 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/16 , H01L2224/48091 , H01L2924/00014
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
摘要翻译：在制造倒装芯片发光二极管器件的方法中，外延层（14,114）沉积在生长衬底（16,116）上以产生外延晶片。在外延晶片上制造多个发光二极管器件。切割外延晶片以产生器件管芯（10,110）。器件管芯（10,110）被倒装芯片结合到安装件（12,112）上。倒装芯片接合包括通过将器件管芯（10,110）的至少一个电极（20,22，120）粘合到至少一个焊盘（10,110）上来将器件管芯（10,110）固定到安装座（12,112）（12,112）的底部（26,28,126）。在倒装芯片接合之后，器件管芯（10,110）的生长衬底（16,116）的厚度减小。

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