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    • 5. 发明申请
    • Thermal transfer device and system and method incorporating same
    • 热转印装置及其组合方法
    • US20060130489A1
    • 2006-06-22
    • US11015260
    • 2004-12-17
    • Stanton Weaver
    • Stanton Weaver
    • F25B21/00H01L35/28B21D53/02
    • H01L35/00B82Y10/00B82Y30/00F25B21/00F25B2321/003H01J45/00Y02B30/66Y10T29/4935
    • A method of manufacturing a thermal transfer device including providing first and second thermally conductive substrates that are substantially atomically flat, providing a patterned electrical barrier having a plurality of closed shapes on the first thermally conductive substrate and providing a nanotube catalyst material on the first thermally conductive substrate in a nanotube growth area oriented within each of the plurality of closed shapes of the patterned electrical barrier. The method also includes orienting the second thermally conductive substrate opposite the first thermally conductive substrate such that the patterned electrical barrier is disposed between the first and second thermally conductive substrates and providing a precursor gas proximate the nanotube catalyst material to facilitate growth of nanotubes in the nanotube growth areas from the first thermally conductive substrate toward, and limited by, the second thermally conductive substrate. In this thermal transfer device, introduction of current flow between the first and second thermally conductive substrates enables heat transfer between the first and second thermally conductive substrates via a flow of electrons between the first and second thermally conductive substrates.
    • 一种制造热转印装置的方法,包括提供基本上原子上平坦的第一和第二导热基底,在第一导热基底上提供具有多个封闭形状的图案化电屏障,并在第一导热基底上提供纳米管催化剂材料 衬底在取向于图案化电屏障的多个封闭形状的每一个内的纳米管生长区域中。 该方法还包括将第二导热衬底定位成与第一导热衬底相对的方向,使得图案化电阻挡层设置在第一和第二导热衬底之间,并提供靠近纳米管催化剂材料的前体气体,以促进纳米管在纳米管中的生长 生长区域从第一导热衬底朝向第二导热衬底限制。 在该热转印装置中,在第一导热基板和第二导热基板之间引入电流可以使第一和第二导热基板之间的电流经由第一和第二导热基板之间的电流传递。