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1. 发明授权

US08432646B2 Magnetic detection element 有权
标题翻译：磁性检测元件
公开(公告)号：US08432646B2
公开(公告)日：2013-04-30
申请号：US12012635
申请日：2008-02-04
申请人： Shuuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
发明人： Shuuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.
摘要翻译：本发明的实施例有助于减少离子束蚀刻中的磁阻传感器端部处的蚀刻损伤。根据一个实施例，在磁阻传感器轨道宽度形成步骤中使用离子束蚀刻（IBE）。该IBE在基板倾斜的状态下将Ar离子束照射到基板，并且进一步使基板围绕其正常旋转轴线旋转。在传统的轨道宽度形成步骤中，IBE在基板旋转的同时始终将Ar离子束照射到衬底上。相比之下，根据本发明的实施例的IBE仅在预定的特定角度范围内将Ar离子束照射到衬底。

2. 发明授权

US08355224B2 Sensor shape of a CPP magnetic head for improving the MR ratio 有权
标题翻译：用于改善MR比的CPP磁头的传感器形状
公开(公告)号：US08355224B2
公开(公告)日：2013-01-15
申请号：US12011904
申请日：2008-01-29
申请人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
发明人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/08
摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦X≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.
摘要翻译：本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离和传感器膜最低部分的一端，满足1.2×T＆nlE; X＆nlE; 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部不存在于自由层末端的轨道中心部分。在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角刻蚀光束随时间变小。

3. 发明申请

US20090046394A1 Sensor shape and etching process of CPP magnetic head for reduce property degradation 有权
标题翻译： CPP磁头的传感器形状和蚀刻工艺，用于降低性能下降
公开(公告)号：US20090046394A1
公开(公告)日：2009-02-19
申请号：US12011904
申请日：2008-01-29
申请人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
发明人： Satoru Okamoto , Koji Okazaki , Shuuichi Kojima , Nobuo Yoshida , Katsuro Watanabe , Hiroyuki Katada
IPC分类号： G11B5/33 , B44C1/22
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/08
摘要： Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦x≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.
摘要翻译：本发明的实施例有助于通过在传感器膜被蚀刻，轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。根据一个实施例，当假设空气轴承表面上的传感器膜的厚度为T时，介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离和传感器膜最低部分的端部，满足1.2×T <= x <= 2.5×T的关系，并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部不存在于自由层末端的轨道中心部分。在蚀刻光束的入射角变化的同时蚀刻传感器膜，并且当假定与传感器膜表面垂直的方向为入射角为0时，在其入射角刻蚀光束随时间变小。

4. 发明申请

US20080218910A1 Magnetic detection element and manufacturing method thereof 有权
标题翻译：磁性检测元件及其制造方法
公开(公告)号：US20080218910A1
公开(公告)日：2008-09-11
申请号：US12012635
申请日：2008-02-04
申请人： Shuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
发明人： Shuichi Kojima , Satoru Okamoto , Nobuo Yoshida , Katsuro Watanabe
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： Embodiments of the present invention help to reduce etching damage at end parts of a magnetoresistive sensor in ion beam etching. According to one embodiment, ion beam etching (IBE) is used in a magnetoresistive sensor track width forming step. This IBE irradiates Ar ion beam to a substrate in a state that the substrate is inclined and further rotates the substrate about its normal as a rotational axis. In a conventional track width forming step, the IBE irradiates the Ar ion beam to the substrate all the time while the IBE is rotating the substrate. By contrast, the IBE according to embodiments of the present invention irradiates the Ar ion beam to the substrate only in a predetermined specific angular range.
摘要翻译：本发明的实施例有助于减少离子束蚀刻中的磁阻传感器端部处的蚀刻损伤。根据一个实施例，在磁阻传感器轨道宽度形成步骤中使用离子束蚀刻（IBE）。该IBE在基板倾斜的状态下将Ar离子束照射到基板，并且进一步使基板围绕其正常旋转轴线旋转。在传统的轨道宽度形成步骤中，IBE在基板旋转的同时始终将Ar离子束照射到衬底上。相比之下，根据本发明的实施例的IBE仅在预定的特定角度范围内将Ar离子束照射到衬底。

5. 发明申请

US20080212238A1 Magnetoresistive head with larger longitudinal biasing 审中-公开
标题翻译：磁阻头具有较大的纵向偏置
公开(公告)号：US20080212238A1
公开(公告)日：2008-09-04
申请号：US12012341
申请日：2008-01-31
申请人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
发明人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
IPC分类号： G11B5/33
CPC分类号： G11B5/59633 , G11B5/59666
摘要： Embodiments of the present invention help to efficiently apply a longitudinal biasing with appropriate strength from a longitudinal biasing layer to a free layer even in a small read gap length. According to one embodiment, in the track width direction of the magnetoresistive film, the longitudinal biasing layer excluding its portion close to the magnetoresistive film is made approximately uniform in thickness. An edge toward the magnetoresistive film of the longitudinal biasing layer is positioned more outwardly in the track width direction than an edge in the track width direction of the free layer. A portion closest to the substrate of the interface between the longitudinal biasing layer and the insulator on the track-width sides is positioned lower than the interface between the magnetoresistive film and the lower magnetic shield layer.
摘要翻译：本发明的实施例有助于即使在小的读取间隙长度中也可以将具有适当强度的纵向偏置从纵向偏置层施加到自由层。根据一个实施例，在磁阻膜的磁道宽度方向上，除了靠近磁阻膜的部分之外的纵向偏置层的厚度大致均匀。朝向纵向偏置层的磁阻膜的边缘比沿自由层的轨道宽度方向的边缘更靠外侧位于轨道宽度方向上。在纵向偏置层和轨道宽度侧的绝缘体之间的界面最靠近的部分位于低于磁阻膜和下部磁屏蔽层之间的界面的位置。

6. 发明授权

US09230574B2 Magnetoresistive head with a CPP structure having suppressed side reading 有权
标题翻译：具有抑制侧读的CPP结构的磁阻头
公开(公告)号：US09230574B2
公开(公告)日：2016-01-05
申请号：US12631295
申请日：2009-12-04
申请人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
发明人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
IPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
摘要翻译：根据一个实施例，CPP结构磁阻头包括在下屏蔽层和上屏蔽层之间的磁阻传感器膜和经由读磁道宽度限定绝缘膜设置在磁阻传感器膜的每一侧的纵向偏置层。在条带高度方向上，纵向偏置层的长度长于其磁化响应于外部磁场而旋转的第二铁磁层的长度。第二铁磁层是包括磁阻传感器膜的层之一。在条带高度处，每个纵向偏置层的表面具有改变其横跨该台阶的厚度的步骤，使得其空气轴承表面部分具有比任何其它部分更大的厚度。还描述了使用磁阻头的其它结构及其生产方法。

7. 发明授权

US06999270B2 Magnetic head and a magnetic disk drive 失效
标题翻译：磁头和磁盘驱动器
公开(公告)号：US06999270B2
公开(公告)日：2006-02-14
申请号：US10699856
申请日：2003-11-04
申请人： Katsuro Watanabe , Takayoshi Ohtsu , Kouji Kataoka , Nobuo Yoshida , Kikuo Kusukawa
发明人： Katsuro Watanabe , Takayoshi Ohtsu , Kouji Kataoka , Nobuo Yoshida , Kikuo Kusukawa
IPC分类号： G11B5/596
CPC分类号： G11B5/39 , G11B5/10
摘要： The CPP structure magnetoresistive head has a structure such that a first lead line is electrically connected to a lead contact portion attached to a lower shield layer the width of which is either equal to or shorter than the maximum length of the lower shield layer in the track direction, or the height of which is either equal to or shorter than the maximum length of the lower shield layer in the stripe height direction. With the structures above, it is possible to prevent that a bump is generated on the upper shield layer by the first lead line, and that a magnetic domain is formed by the bump, which is a cause of noise generation. Further, it is possible to avoid overlapping between the lead line and the upper shield layer.
摘要翻译： CPP结构磁阻头具有这样的结构，使得第一引线与连接到下屏蔽层的引线接触部分电连接，该下屏蔽层的宽度等于或短于轨道中的下屏蔽层的最大长度方向，或者其高度等于或小于条形高度方向上的下屏蔽层的最大长度。利用上述结构，可以防止由第一引线在上屏蔽层上产生凸起，并且可以通过作为产生噪声的原因的凸块形成磁畴。此外，可以避免引线与上屏蔽层之间的重叠。

8. 发明申请

US20100142100A1 Magnetoresistive Head With A CPP Structure Having Suppressed Side Reading 有权
标题翻译：具有抑制侧读的CPP结构的磁阻头
公开(公告)号：US20100142100A1
公开(公告)日：2010-06-10
申请号：US12631295
申请日：2009-12-04
申请人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
发明人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
摘要翻译：根据一个实施例，CPP结构磁阻头包括在下屏蔽层和上屏蔽层之间的磁阻传感器膜和经由读磁道宽度限定绝缘膜设置在磁阻传感器膜的每一侧的纵向偏置层。在条带高度方向上，纵向偏置层的长度长于其磁化响应于外部磁场而旋转的第二铁磁层的长度。第二铁磁层是包括磁阻传感器膜的层之一。在条带高度处，每个纵向偏置层的表面具有改变其横跨该台阶的厚度的步骤，使得其空气轴承表面部分具有比任何其它部分更大的厚度。还描述了使用磁阻头的其它结构及其生产方法。

9. 发明授权

US07333301B2 Magnetic recording head and method for manufacturing 失效
标题翻译：磁记录头及制造方法
公开(公告)号：US07333301B2
公开(公告)日：2008-02-19
申请号：US10650832
申请日：2003-08-29
申请人： Kimitoshi Etoh , Nobuo Yoshida , Moriaki Fuyama , Makoto Morijiri , Kenichi Meguro , Ichiro Oodake , Kazue Kudo , Yohji Maruyama , Katsuro Watanabe
发明人： Kimitoshi Etoh , Nobuo Yoshida , Moriaki Fuyama , Makoto Morijiri , Kenichi Meguro , Ichiro Oodake , Kazue Kudo , Yohji Maruyama , Katsuro Watanabe
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3136 , G11B5/3909 , G11B5/3912 , Y10T29/49044
摘要： A thin-film magnetic head having little temperature rise in the element, good heat dissipation and a short magnetic path length (narrow coil pitch) and manufacturing method for same is provided. To form the coil of the thin-film magnetic head, a lower coil is first formed and after forming alumina and an inorganic compound containing alumina, a trench is formed for the upper coil by reactive ion etching. The lower coil allows uniform etching at this time and functions as a film to prevent loading effects occurring during reactive ion etching. This trench is then plated in copper and chemical mechanical planarization performed to form the upper layer coil as the dual-layer coil of the present invention. Heat from the coil is efficiently radiated towards the substrate by alumina and an inorganic compound containing alumina with good heat propagation. The ratio of alumina or inorganic compound containing alumina in the lower coil can be selected by reactive ion etching so that an upper coil trench functioning as an etching stopper can be securely formed to allow forming a stable coil film thickness and a short magnetic path length.
摘要翻译：提供元件温度上升较小，散热好，磁路长度短（窄线圈间距）及其制造方法的薄膜磁头。为了形成薄膜磁头的线圈，首先形成下线圈，在形成氧化铝和含有氧化铝的无机化合物之后，通过反应离子蚀刻形成用于上部线圈的沟槽。此时，下线圈允许均匀刻蚀，起到膜的作用，以防止在反应离子蚀刻期间发生的负载效应。然后将该沟槽镀铜并进行化学机械平面化以形成上层线圈作为本发明的双层线圈。来自线圈的热量通过氧化铝和含有良好热传播的氧化铝的无机化合物有效地朝向基板辐射。可以通过反应离子蚀刻来选择下层线圈中的氧化铝或含有氧化铝的无机化合物的比例，从而可以可靠地形成用作蚀刻停止层的上部线圈沟槽，以形成稳定的线圈膜厚度和短的磁路长度。

10. 发明授权

US07944651B2 CPP-type magnetoresistive effect head and method of manufacturing the same 有权
标题翻译： CPP型磁阻效应头及其制造方法
公开(公告)号：US07944651B2
公开(公告)日：2011-05-17
申请号：US12006723
申请日：2008-01-04
申请人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
发明人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , H01L43/08 , H01L43/10
摘要： Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
摘要翻译：本发明的实施例有助于防止垂直于平面型（CPP型）磁阻效应头的电流的偏置磁场的减小，从而抑制读取输出的减小。根据一个实施例，在下磁屏蔽的顶部上形成CPP型磁阻效应膜。在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上，以便限定磁畴控制层的高度。为了增加磁畴控制层的膜厚度，磁畴控制层和再填充绝缘膜高于自由层的顶表面。在自由层，磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜，在磁屏蔽下层膜上形成上磁屏蔽层。

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