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1. 发明授权

US09230574B2 Magnetoresistive head with a CPP structure having suppressed side reading 有权
标题翻译：具有抑制侧读的CPP结构的磁阻头
公开(公告)号：US09230574B2
公开(公告)日：2016-01-05
申请号：US12631295
申请日：2009-12-04
申请人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
发明人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
IPC分类号： G11B5/39 , B82Y10/00 , B82Y25/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
摘要翻译：根据一个实施例，CPP结构磁阻头包括在下屏蔽层和上屏蔽层之间的磁阻传感器膜和经由读磁道宽度限定绝缘膜设置在磁阻传感器膜的每一侧的纵向偏置层。在条带高度方向上，纵向偏置层的长度长于其磁化响应于外部磁场而旋转的第二铁磁层的长度。第二铁磁层是包括磁阻传感器膜的层之一。在条带高度处，每个纵向偏置层的表面具有改变其横跨该台阶的厚度的步骤，使得其空气轴承表面部分具有比任何其它部分更大的厚度。还描述了使用磁阻头的其它结构及其生产方法。

2. 发明授权

US07944651B2 CPP-type magnetoresistive effect head and method of manufacturing the same 有权
标题翻译： CPP型磁阻效应头及其制造方法
公开(公告)号：US07944651B2
公开(公告)日：2011-05-17
申请号：US12006723
申请日：2008-01-04
申请人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
发明人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watanabe
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , H01L43/08 , H01L43/10
摘要： Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
摘要翻译：本发明的实施例有助于防止垂直于平面型（CPP型）磁阻效应头的电流的偏置磁场的减小，从而抑制读取输出的减小。根据一个实施例，在下磁屏蔽的顶部上形成CPP型磁阻效应膜。在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上，以便限定磁畴控制层的高度。为了增加磁畴控制层的膜厚度，磁畴控制层和再填充绝缘膜高于自由层的顶表面。在自由层，磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜，在磁屏蔽下层膜上形成上磁屏蔽层。

3. 发明申请

US20100142100A1 Magnetoresistive Head With A CPP Structure Having Suppressed Side Reading 有权
标题翻译：具有抑制侧读的CPP结构的磁阻头
公开(公告)号：US20100142100A1
公开(公告)日：2010-06-10
申请号：US12631295
申请日：2009-12-04
申请人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
发明人： Nobuo Yoshida , Katsuro Watanabe , Masahiro Ousugi , Atsushi Kato
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.
摘要翻译：根据一个实施例，CPP结构磁阻头包括在下屏蔽层和上屏蔽层之间的磁阻传感器膜和经由读磁道宽度限定绝缘膜设置在磁阻传感器膜的每一侧的纵向偏置层。在条带高度方向上，纵向偏置层的长度长于其磁化响应于外部磁场而旋转的第二铁磁层的长度。第二铁磁层是包括磁阻传感器膜的层之一。在条带高度处，每个纵向偏置层的表面具有改变其横跨该台阶的厚度的步骤，使得其空气轴承表面部分具有比任何其它部分更大的厚度。还描述了使用磁阻头的其它结构及其生产方法。

4. 发明申请

US20080239585A1 CPP-type magnetoresistive effect head and method of manufacturing the same 有权
标题翻译： CPP型磁阻效应头及其制造方法
公开(公告)号：US20080239585A1
公开(公告)日：2008-10-02
申请号：US12006723
申请日：2008-01-04
申请人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watababe
发明人： Masahiro Ousugi , Kouji Okazaki , Satoru Okamoto , Katsuro Watababe
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , H01L43/08 , H01L43/10
摘要： Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type magnetoresistive effect film is formed on top of a lower magnetic shield. A refill insulation film and a magnetic domain control layer are formed on both sides of an intermediate layer and a free layer of the CPP-type magnetoresistive effect film. A side wall protection film is formed on a side wall of the refill insulation film and on top of the free layer so as to define the height of the magnetic domain control layer. To increase the film thickness of the magnetic domain control layer, the magnetic domain control layer and the refill insulation film are higher than the top surface of the free layer. A magnetic shield underlayer film is formed on the top surfaces of the free layer, the magnetic domain control layer and the refill insulation film and an upper magnetic shield layer is formed on the magnetic shield underlayer film.
摘要翻译：本发明的实施例有助于防止垂直于平面型（CPP型）磁阻效应头的电流的偏置磁场的减小，从而抑制读取输出的减小。根据一个实施例，在下磁屏蔽的顶部上形成CPP型磁阻效应膜。在中间层的两侧和CPP型磁阻效应膜的自由层上形成补充绝缘膜和磁畴控制层。侧壁保护膜形成在补充绝缘膜的侧壁上并且在自由层的顶部上，以便限定磁畴控制层的高度。为了增加磁畴控制层的膜厚度，磁畴控制层和再填充绝缘膜高于自由层的顶表面。在自由层，磁畴控制层和再填充绝缘膜的上表面上形成有磁屏蔽下层膜，在磁屏蔽下层膜上形成上磁屏蔽层。

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